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The sensitivity to silicone contamination of a wide variety of adhesive bond systems is discussed. Generalizations regarding factors that make some bond systems more sensitive to contamination than others are inferred and discussed. The effect of silane adhesion promoting primer on the contamination sensitivity of two epoxy/steel bond systems is also discussed.
Fractured lap shear Ti 6-4 adherends bonded with polyphenyquinoxaline (PPQ) and polysulfone were analyzed. The effects of adherend pretreatment, stress level, thermal aging, anodizing voltage, and modified adhesive of Ti 6-4 adherend bonded with PPQ on lap shear strength were studied. The effect of adherend pretreatment on lap shear strength was investigated for PS samples. Results of scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) used to study the surface topography and surface composition are also discussed.
This is the third Flat-Plate Solar Array (FSA) Project document reporting on chemical bonding technology for terrestrial photovoltaic (PV) modules. The impetus for this work originated in the late 1970s when PV modules employing silicone encapsulation materials were undergoing delamination during outdoor exposure. At that time, manufacturers were not employing adhesion promoters and, hence, module interfaces in common with the silicone materials were only in physical contact and therefore easily prone to separation if, for example, water were to penetrate to the interfaces. Delamination with silicone materials virtually vanished when adhesion promoters, recommended by silicone manufacturers, were used. The activities related to the direct investigation of chemically bonded interfaces are described.
Combination of hardware and software helps ultrasonic C-scan inspection system create images of bond layer in laminated composite material, even when obscured by another bond layer. Produces image of both layers in single scan. Includes ultrasonic transducer, pulser/receiver, mechanical scanner, personal computer as controller, and electronic circuitry that gates first and second peak signals, detects peaks, and feeds resulting amplitude data to computer.
Low resistance, high strength, nonmagnetic electrode bonding to lead telluride and lead- telluride-tin telluride alloys
Bonding parameters and quality control for cadmium-stainless steel clad fuel pellet containment vessel production
Analysis of bonding and grounding measures for minimizing hazards from electrical fault, lightning, explosion, and electromagnetic radiation atKSC - Vol. 1
Preventive maintenance instructions for bonding and electrical grounding systems to prevent equipment damage by electrical faults, lightning, and radiation - Vol. 3
Development of adhesives for applications requiring long-term service at temperatures up to 600 F is discussed. This development work utilizes polyimide (PI) and polyphenylquinoxaline (PPQ) resin technology worked out previously. The resultant adhesives are evaluated in structural joints of titanium, steel and composite adherends and in honeycomb sandwich panels. Suitable adhesives also are evaluated in weld bonded titanium alloy joints. Testing includes determination of long-term aging of stressed and unstressed specimens at temperatures from about 450 F to 600 F as well as under dynamic fatigue conditions.
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The behavior of the dynamical electron correlation energy is remarkably complex at short internuclear distances: Δ E DEC (Δ R ) = E DEC (Δ R ) − E DEC ( R = ∞) with Δ R = R − R e .
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Copper wire bonds have replaced gold wire bonds in the majority of commercial semiconductor devices for the latest technology nodes. Although economics has been the driving mechanism to lower semiconductor packaging costs for a savings of about 20% by replacing gold wire bonds with copper, copper also has materials property advantages over gold. When compared to gold, copper has approximately: 25% lower electrical resistivity, 30% higher thermal conductivity, 75% higher tensile strength and 45% higher modulus of elasticity. Copper wire bonds on aluminum bond pads are also more mechanically robust over time and elevated temperature due to the slower intermetallic formation rate - approximately 1/100th that of the gold to aluminum intermetallic formation rate. However, there are significant tradeoffs with copper wire bonding - copper has twice the hardness of gold which results in a narrower bonding manufacturing process window and requires that the semiconductor companies design more mechanically rigid bonding pads to prevent cratering to both the bond pad and underlying chip structure. Furthermore, copper is significantly more prone to corrosion issues. The semiconductor packaging industry has responded to this corrosion concern by creating a palladium coated copper bonding wire, which is more corrosion resistant than pure copper bonding wire. Also, the selection of the device molding compound is critical because use of environmentally friendly green compounds can result in internal CTE (Coefficient of Thermal Expansion) mismatches with the copper wire bonds that can eventually lead to device failures during thermal cycling. Despite the difficult problems associated with the changeover to copper bonding wire, there are billions of copper wire bonded devices delivered annually to customers. It is noteworthy that Texas Instruments announced in October of 2014 that they are shipping microcircuits containing copper wire bonds for safety critical automotive applications. An evaluation of copper wire bond technology for applicability to spaceflight hardware may be warranted along with concurrently compiling a comprehensive understanding of the failure mechanisms involved with copper wire bonded semiconductor devices.