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Mechanisms of Alkali Ionic Transport in Amorphous Oxyhalides Solid State Conductors
Amorphous oxyhalides have attracted significant attention due to their relatively high ionic conductivity (1 mS cm –1 ), excellent chemical stability, mechanical softness, and facile synthesis routes via standard solid‐state reactions. These materials exhibit an ionic conductivity that is almost independent of the underlying chemistry, in stark contrast to what occurs in crystalline conductors. In this work, we employ machine learning interatomic potentials to construct large‐scale molecular dynamics trajectories encompassing hundreds of nanoseconds to obtain statistically converged transport properties. We find that the amorphous state consists of chain fragments of metal‐anion tetrahedra of various lengths. By analyzing the residence time of alkali cations migrating around tetrahedrally‐coordinated metals, we find that oxygen anions limit alkali diffusion. By computing the full Einstein expression of the ionic conductivity, we demonstrate that the alkali transference number of these materials is strongly influenced by distinct‐particles correlations, while alkali transport is dictated by uncorrelated self‐diffusion. By extending this analysis to chemical compositions AMX 2.5 O 0.75 , spanning different alkaline (A = Li, Na, K), metallic (M = Al, Ga, In), and halogen (X = Cl, Br, I) species, we clarify why the diffusion properties of these materials remain largely insensitive to variations in atomic isovalent chemistry.
E-beam-enhanced solid-state mechanical amorphization of α-quartz: Reduced deformation barrier via localized excess electrons as network modifiers
Under hydrostatic pressure, α-quartz (α-SiO 2 ) undergoes solid-state mechanical amorphization wherein the interpenetration of [SiO 4 ] 2- tetrahedra occurs and the material loses crystallinity. This phase transformation requires a high hydrostatic pressure of 14GPa because the repulsive forces resulting from the ionic nature of the Si–O bonds prevent the severe distortion of the atomic configuration. Herein, we experimentally and computationally demonstrate that e-beam irradiation changes the nature of the interatomic bonds in α-quartz and enhances the solid-state mechanical amorphization at nanoscale. Specifically, during in situ uniaxial compression, a larger permanent deformation occurs in α-quartz submicron pillars compressed during e-beam irradiation than in those without e-beam irradiation. Microstructural analysis reveals that the large permanent deformation under e-beam irradiation originates from the enhanced mechanical amorphization of α-quartz and the subsequent viscoplastic deformation of the amorphized region. Further, atomic-scale simulations suggest that the delocalized excess electrons introduced by e-beam irradiation move to highly distorted atomic configurations and alleviate the repulsive force, thus reducing the barrier to the solid-state mechanical amorphization. In conclusion, these findings deepen our understanding of electron–matter interactions and can be extended to new glass forming and processing technologies at nano- and microscale.
Radiation Tolerance and Mechanical Properties of Nanostructured Amorphous-Ceramic/Metal Composites
The objective of this work was to use a radically non-traditional approach to design amorphous-ceramic/metal composites for service in extreme irradiation environments. The project was built on a strong integration among four research teams for materials synthesis and characterization, ion irradiation, mechanical evaluation, and atomic scale modeling. Rather than try to prevent microstructure changes in polycrystalline aggregates, the research team worked to evolve composite systems where one of the constituents is intentionally synthesized in a non-crystalline or “amorphous” state. Because amorphous materials possess no translational symmetry, such alloys do not contain conventional crystal defects such as vacancies, interstitials, or dislocations. These materials offer the possibility of eliminating the root cause responsible for radiation damage in polycrystalline solids - namely the production of point defects and clusters thereof in collision cascades - and could serve as the basis for developing a new class of structural materials with unprecedented resistance to radiation. The amorphous alloys were used to develop advanced amorphous-ceramic/metal composites with greatly improved radiation tolerance and stability above 500oC, and improved mechanical performance by combining the good properties of amorphous materials (high strength and elastic limit) with those of crystalline materials (high toughness, strain hardening). The ceramic component of the composite consisted of a high crystallization temperature and radiation tolerant amorphous alloy composed of Si-O-C, silicon oxycarbide, while the metal layer was Fe and Fe(Cr), chosen to serve as model materials for steel. A prime hypothesis that drove this work is that the composite interface, together with the composite constituents, would provide significantly enhanced radiation tolerance, similar to or superior to those observed in metallic nanolayered structures, in a more engineering relevant material system. As our experimental data and modeling show, we have successfully developed a new class of ceramic/metal composites that can be adapted for engineering applications, thus significantly impacting improved materials performance for advanced nuclear reactors.
Selective Brookite Polymorph Formation Related to the Amorphous Precursor State in TiO 2 Thin Films
A wide variety of brookite TiO 2 synthesis methods have been published over the past several decades, but few studies discuss the underlying mechanism that stabilizes brookite over its stable counterparts, rutile and anatase. Here in this study, we investigate of the effect of pulsed laser deposition parameters on the as-deposited amorphous precursor titania thin films, which subsequently crystallize into stable and metastable TiO 2 polymorphs upon annealing. We find that oxygen pressure in the deposition chamber strongly influences the non-equilibrium state of the amorphous precursor, which ultimately allows for selective polymorph formation. Rutile forms as the dominant phase at low pO 2 < 0.1 mTorr, while anatase is favored at high pO 2 > 5 mTorr. Brookite forms primarily at intermediate pO 2 (0.5-1.0 mTorr). Controlling the amorphous structure (i.e. Ti - O bonding and polyhedral arrangement) of the precursors via oxygen deficiency is therefore likely for the selective formation of crystalline TiO 2 polymorphs from sub-stoichiometric amorphous precursors. Lastly, directing phase selectivity by manipulating the structure and internal energy of the precursor amorphous state may have tremendous potential for synthesis of metastable crystalline phases that exhibit more desirable properties in comparison to their stable counterparts.
Phonon renormalization and Raman spectral evolution through amorphous to crystalline transitions in Sb{sub 2}Te{sub 3} thin films
A symmetry specific phonon mode renormalization is observed across an amorphous to crystalline phase transformation in thin films of the topological material Sb{sub 2}Te{sub 3} using Raman spectroscopy. We present evidence for local crystalline symmetry in the amorphous state, eventhough, the q = 0 Raman selection rule is broken due to strong structural disorder. At crystallization, the in-plane polarized (E{sub g}{sup 2}) mode abruptly sharpens while the out-of-plane polarized (A{sub 1g}) modes are only weakly effected. This effect unique to the E{sub g} symmetry is exceptional considering that polarized spectra and comparison of the single phonon density of states between the amorphous and crystalline phases suggest that short range order of the amorphous phase is, on the average, similar to that of the crystalline material while electrical transport measurements reveal a sharp insulator-to-metal transition. Our findings point to the important role of anisotropic disorder affecting potential applications of topological and phase-change based electronics.
Electronic density-of-states of amorphous vanadium pentoxide films: Electrochemical data and density functional theory calculations
Thin films of V{sub 2}O{sub 5} were prepared by sputter deposition onto transparent and electrically conducting substrates and were found to be X-ray amorphous. Their electrochemical density of states was determined by chronopotentiometry and displayed a pronounced low-energy peak followed by an almost featureless contribution at higher energies. These results were compared with density functional theory calculations for amorphous V{sub 2}O{sub 5}. Significant similarities were found between measured data and computations; specifically, the experimental low-energy peak corresponds to a split-off part of the conduction band apparent in the computations. Furthermore, the calculations approximately reproduce the experimental band gap observed in optical measurements.
The elastic properties of beta-eucryptite in the glassy and microcracked crystalline states
Amorphous and crystalline {beta}-eucryptite (LiAlSiO{sub 4}) specimens were prepared with controlled grain sizes and varying levels of microcracking, and their elastic moduli were determined using resonant ultrasound spectroscopy. It was found that the relationship between Young's modulus, Poisson's ratio and degree of microcracking in these materials can be described well with fracture-mechanics-based models. It was also found that if glassy {beta}-eucryptite is considered to be a microcracked medium in which broken Si-O bonds, with respect to the crystalline material, constitute microcracks, then its elastic properties can be described equally well by these models. Such considerations are explained by noting the differences in atomic bond density among the different states of the material and by accounting for differences in strain energy release rate measurements on glass and ceramic specimens.
Far tails of the density of states in amorphous organic semiconductors
Far tails of the density of state (DOS) are calculated for the simple models of organic amorphous material, the model of dipolar glass and model of quadrupolar glass. It was found that in both models far tails are non-Gaussian. In the dipolar glass model, the DOS is symmetric around zero energy, while for the model of quadrupolar glass, the DOS is generally asymmetric and its asymmetry is directly related to the particular geometry of quadrupoles. Far tails of the DOS are relevant for the quasi-equilibrium transport of the charge carriers at low temperature. Asymmetry of DOS in quadrupolar glasses means a principal inequivalence of the random energy landscape for the transport of electrons and holes. Possible effect of the non-Gaussian shape of the far tails of the DOS on the temperature dependence of carrier drift mobility is discussed.
Applying state diagrams to food processing and development
The physical state of food components affects their properties during processing, storage, and consumption. Removal of water by evaporation or by freezing often results in formation of an amorphous state (Parks et al., 1928; Troy and Sharp, 1930; Kauzmann, 1948; Bushill et al., 1965; White and Cakebread, 1966; Slade and Levine, 1991). Amorphous foods are also produced from carbohydrate melts by rapid cooling after extrusion or in the manufacturing of hard sugar candies and coatings (Herrington and Branfield, 1984). Formation of the amorphous state and its relation to equilibrium conditions are shown in Fig. 1 [see text]. The most important change, characteristic of the amorphous state, is noticed at the glass transition temperature (Tg), which involves transition from a solid "glassy" to a liquid-like "rubbery" state. The main consequence of glass transition is an increase of molecular mobility and free volume above Tg, which may result in physical and physico-chemical deteriorative changes (White and Cakebread, 1966; Slade and Levine, 1991). We have conducted studies on phase transitions of amorphous food materials and related Tg to composition, viscosity, stickiness, collapse, recrystallization, and ice formation. We have also proposed that some diffusion-limited deteriorative reactions are controlled by the physical state in the vicinity of Tg (Roos and Karel, 1990, 1991a, b, c). The results are summarized in this article, with state diagrams based on experimental and calculated data to characterize the relevant water content, temperature, and time-dependent phenomena of amorphous food components.
Localized electronic and vibrational states in amorphous diamond
Amorphous diamond structures are generated by quenching high-density high-temperature liquid carbon using tight-binding molecular-dynamics simulations. We show that the generated amorphous diamond structures are predominated by strong tetrahedral bonds with the sp 3 bonding fraction as high as 97%, thus exhibit an ultra-high incompressibility and a wide band gap close to those of crystalline diamond. A small amount of sp 2 bonding defects in the amorphous sample contributes to localized electronic states in the band gap while large local strain gives rise to localization of vibrational modes at both high and low frequency regimes.
Quantifying a partial polyamorphic transition in a cerium-based metallic glass during cooling
Cerium-based metallic glasses are prototype polyamorphous systems with pressure-induced polyamorphic transitions extensively reported. Cooling typically has a similar effect on materials as compression with regard to reducing volume. However, previous studies show dramatically different behavior of Ce-based metallic glasses between cooling and compression, whose origin remains unclear. Here, using in situ low-temperature synchrotron high-energy x-ray diffraction, the structural evolution of a Ce68Al10Cu20Co2 metallic glass is accurately determined and analyzed by a structure factor and a reduced pair distribution function (PDF) during cooling from 298 to 83 K. An unusually large linear thermal expansion coefficient is revealed, which is associated with both continuous but inconsistent structural changes between the two subpeaks of the first atomic shell in terms of average bond lengths and coordination numbers. These phenomena are suggested to be attributed to a gradual 4f electron delocalization of only a minimal amount (∼2.6% at 83 K) of Ce atoms by quantitative analysis of the PDF data. However, a previously expected global polymorphic transition from a low-density amorphous state to a high-density amorphous state with an abrupt volume collapse is not observed. Moreover, electrical resistivity also shows a continuous increase during cooling without any sharp change. It is clarified that cryogenic temperatures could facilitate but are not powerful enough alone to trigger a global polymorphic transition in the Ce68Al10Cu20Co2 metallic glass, suggesting a wide distribution of its local atomic environment.
Observation of spin-momentum locked surface states in amorphous Bi 2 Se 3
Crystalline symmetries have played a central role in the identification and understanding of quantum materials. Here we investigate whether an amorphous analogue of a well-known three-dimensional strong topological insulator has topological properties in the solid state. We show that amorphous Bi 2 Se 3 thin films host a number of two-dimensional surface conduction channels. Our angle-resolved photoemission spectroscopy data are consistent with a dispersive two-dimensional surface state that crosses the bulk gap. Spin-resolved photoemission spectroscopy shows this state has an anti-symmetric spin texture, confirming the existence of spin-momentum locked surface states. We discuss these experimental results in light of theoretical photoemission spectra obtained with an amorphous topological insulator tight-binding model, contrasting it with alternative explanations. In conclusion, the discovery of spin-momentum locked surface states in amorphous materials opens a new avenue to characterize amorphous matter and triggers the search for an overlooked subset of quantum materials outside of current classification schemes.
Structure of the glass-forming metallic liquids by ab-initio and classical molecular dynamics, a case study: Quenching the Cu{sub 60}Ti{sub 20}Zr{sub 20} alloy
We consider the question of the amorphization of metallic alloys by melt quenching, as predicted by molecular dynamics simulations with semi-empirical potentials. The parametrization of the potentials is discussed on the example of the ternary Cu-Ti-Zr transition metals alloy, using the ab-initio simulation as a reference. The pair structure in the amorphous state is computed from a potential of the Stillinger-Weber form. The transferability of the parameters during the quench is investigated using two parametrizations: from solid state data, as usual and from a new parametrization on the liquid structure. When the adjustment is made on the pair structure of the liquid, a satisfactory transferability is found between the pure components and their alloys. The liquid structure predicted in this way agrees well with experiment, in contrast with the one obtained using the adjustment on the solid. The final structure, after quenches down to the amorphous state, determined with the new set of parameters is shown to be very close to the ab-initio one, the latter being in excellent agreement with recent X-rays diffraction experiments. The corresponding critical temperature of the glass transition is estimated from the behavior of the heat capacity. Discussion on the consistency between the structures predicted using semi-empirical potentials and ab-initio simulation, and comparison of different experimental data underlines the question of the dependence of the final structure on the thermodynamic path followed to reach the amorphous state.
The novel phase transition of NaBi(WO{sub 4}){sub 2} under high pressure
The Raman and synchrotron angle-dispersive X-ray diffraction studies have been performed on NaBi(WO{sub 4}){sub 2} under high pressure up to 30.7 and 36.2 GPa, respectively, at room temperature. With pressure increases to ∼7.0 GPa, the structure of NaBi(WO{sub 4}){sub 2} begins to transform from tetragonal (I4{sub 1}/a) into monoclinic (P2/m), and the phase transition completes around 13 GPa. With pressure higher than 29.0 GPa, the NaBi(WO{sub 4}){sub 2} turns into amorphous state. The random arrangement of Na{sup +} and Bi{sup 3+} in short-range ordered scheelite NaBi(WO{sub 4}){sub 2} results in the tetragonal to monoclinic phase transition, which is different from that observed in AWO{sub 4} tungstates and AMoO{sub 4} molybdates (A=Ca, Sr, Ba, Pb, Eu, Cd). - Graphical abstract: The NaBi(WO{sub 4}){sub 2} transforms from tetragonal into monoclinic, which starts around 7 GPa and completes at about 13 GPa. With pressure higher than 29 GPa, the NaBi(WO{sub 4}){sub 2} turns into amorphous state. Highlights: ► Raman and X-ray diffraction studies performed on NaBi(WO{sub 4}){sub 2} up to 30.7 and 36.2 GPa, respectively. ► The tetragonal (I4{sub 1}/a) into monoclinic (P2/m) phase transition is determined. ► With pressure higher than 29 GPa, the NaBi(WO{sub 4}){sub 2} ultimately turns into amorphous state. ► The ambient pressure bulk modulus and volume of tetragonal and monoclinic phases are obtained.
Energy band alignment and electronic states of amorphous carbon surfaces in vacuo and in aqueous environment
In this paper, we obtain the energy band positions of amorphous carbon (a–C) surfaces in vacuum and in aqueous environment. The calculations are performed using a combination of (i) classical molecular dynamics (MD), (ii) Kohn-Sham density functional theory with the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional, and (iii) the screened-exchange hybrid functional of Heyd, Scuseria, and Ernzerhof (HSE). PBE allows an accurate generation of a-C and the evaluation of the local electrostatic potential in the a-C/water system, HSE yields an improved description of energetic positions which is critical in this case, and classical MD enables a computationally affordable description of water. Our explicit calculation shows that, both in vacuo and in aqueous environment, the a-C electronic states available in the region comprised between the H{sub 2}/H{sub 2}O and O{sub 2}/H{sub 2}O levels of water correspond to both occupied and unoccupied states within the a-C pseudogap region. These are localized states associated to sp{sup 2} sites in a-C. The band realignment induces a shift of approximately 300 meV of the a-C energy band positions with respect to the redox levels of water.
Photoelectron emission yield experiments on evolution of sub-gap states in amorphous In-Ga-Zn-O thin films with post deposition hydrogen treatment
Total photoyield emission spectroscopy (TPYS) was applied to study the evolution of sub-gap states in hydrogen-treated amorphous In-Ga-Zn-O (a-IGZO) thin films. The a-IGZO thin films were subjected to hydrogen radicals and subsequently annealed in ultra-high vacuum (UHV) conditions. A clear onset of the electron emission was observed at around 4.3 eV from the hydrogen-treated a-IGZO thin films. After successive UHV annealing at 300 °C, the onset in the TPYS spectra was shifted to 4.15 eV, and the photoelectron emission from the sub-gap states was decreased as the annealing temperature was increased. In conjunction with the results of thermal desorption spectrometer, it was deduced that the hydrogen atoms incorporated in the a-IGZO thin films induced metastable sub-gap states at around 4.3 eV from vacuum level just after the hydrogenation. It was also suggested that the defect configuration was changed due to the higher temperature UHV annealing, and that the hydrogen atoms desorbed with the involvement of Zn atoms. These experiments produced direct evidence to show the formation of sub-gap states as a result of hydrogen incorporation into the a-IGZO thin films.
An amorphous phase formation at palladium / silicon oxide (Pd/SiO{sub x}) interface through electron irradiation - electronic excitation process
A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiO{sub x}) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface.