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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗
DOE OSTI2025

Development of an Energy-Efficient and High-Productivity Ammonia Recovery and Removal Process Using Resin-Wafer Electrodeionization

As efforts to develop various energy resources, ammonia energy is emerging as a promising carbon-free fuel alternative. Recovering high-concentration ammonia and ammonium from wastewater potentially offers significant environmental and economic benefits. However, research on recovery technologies for industries such as semiconductors remains limited. This study develops an efficient, energy-saving ammonia recovery technology using Resin Wafer Electrodeionization (RW-EDI), specifically for the semiconductor industry. RW-EDI shows promise for recovering ammonia from high-concentration wastewater. By optimizing parameters, such as voltage and initial concentration, a balance between productivity and energy consumption is achieved. Results indicate that ammonium and fluoride ion transport kinetics are similar, with minimal competition and selectivity values between 0.95 and 1.08. As the initial ammonia/ammonium concentration increases from 500 to 8000 ppm, reaction rate constants and the overall mass transfer coefficient decrease. Increasing the voltage can enhance mass transfer and eliminate barriers. Ion transport primarily occurs in the RW solid phase, accounting for 93.89% of the total current. Additionally, RW-EDI shows superior specific energy consumption within a concentration range of 500 ppm to 8000 ppm, outperforming technologies like electrodialysis by reducing specific energy consumption from 8−15 kWh/kg-NH 4 + to 1.2−2.5 kWh/kg-NH 4 + . This study highlights RW-EDI’s potential for ammonia recovery, providing valuable insights for future applications in wastewater treatment.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1993

Transient current interruption mechanism in a magnetically delayed vacuum switch

The capacity of a magnetically delayed vacuum switch to conduct current depends on the density of plasma injected into the switch. Exceeding the current capacity results in the switch entering a lossy mode of operation characterized by a transient interruption of the main current (opening behavior) and a rapid increase of voltage across the vacuum gap. Streak and framing photographs of the discharge indicate that a decrease of luminosity near the middle of the gap preceeds the transition to the opening phase. The zone of low luminosity propagates toward the cathode. This evidence suggests that the mechanism causing the opening phase is erosion of the background plasma in a manner similar to that in a plasma-opening switch. The resulting ion depletion forces a space-charge-limited conduction mode. The switch inductance maintains a high discharge current even during the space-charge-limited conduction phase, thus producing high internal fields. The high accelerating voltage, in turn, produces electron and ion beams that heat the electrode surfaces. As a result of the heating, jets of electrode vapor issue from the electrodes, either cathode or anode, depending on the selection of electrode materials.

Morris, Gibson, Jr.↗
DOE OSTI2024

Performance Evaluation of Multi-Vendor Grid-Forming Inverters for Grid-Connected Operation Through Hardware Experimentation: Preprint

Existing real-world projects of GFM inverters that operate in parallel to power grids typically are sized between dozens and a few hundreds Megawatt (MW) scale according to a recent NERC GFM inverter white paper. These large systems are often difficult to evaluate prior to deployments because of their large size. The performance of smaller GFM inverters (dozens to a few hundreds MW) that operate parallel with power grids (distribution systems) is even less understood. There is an opportunity to better understand these systems through hardware testing under controlled laboratory conditions. Therefore, this paper presents the functional performance evaluation tests of multiple (three) commercial GFM inverters when they operate in parallel with the grid through hardware experiments. The goal of these tests is to explore the GFM inverters' functionalities and dynamic response when in parallel with power grids to eventually develop universal specifications for GFM inverters. Both steady state (changing the inverter's frequency and voltage droop) and transient (adding step change in grid's frequency/voltage) tests are performed for each GFM inverter with the same testing circuit and testing protocol. The experimental results indicate the bench-marked performance that: 1) the GFM inverters can be dispatched through frequency and voltage droop intercepts to output the target power when paralleled to the grid; 2) the GFM inverters automatically respond to system frequency and voltage events to output the needed power, however, the GFM inverters all show stability issues when absorbing reactive power from the grid.

grid-forming inverters↗
DOE OSTI2020

Pulse-shape analysis in Cd 0.9 Zn 0.1 Te 0.98 Se 0.02 room-temperature radiation detectors

The effect of trapping of charge carriers on the shape of the charge pulses from room temperature nuclear detectors, based on a recently discovered quaternary semiconductor Cd 0.9 Zn 0.1 Te 0.98 Se 0.02 (CZTS), has been studied. Here, we present a charge-trapping model that explains the pulse shapes for its entire duration from radiation detectors containing multiple defect types. A piecewise continuous model, based on the movement of a large number of charge carriers rather than a single charge, has been proposed to explain the pulse shapes from planar room temperature nuclear detectors. An experimental method based on the model has been described to extract charge-trapping information. This model can be applied to similar semiconductor detectors with electrically active trap centers, in general, to extract information like pre-trapping drift times. Charge pulses from a CZTS planar detector, exposed to 5486 keV alpha particles emitted by a 241Am source, were acquired using a digitizer, and the pulse shapes were explained based on the proposed model. The pre-trapping drift times for electrons as well as holes in CZTS were calculated and studied as a function of operating bias voltage, and a contrast between their bias dependent behaviors was noticed, indicating the behavioral difference of electron and hole traps.

42 ENGINEERING↗
DOE OSTI2022

Microgap breakdown with floating metal rod perturbations

Here, we report the characterization of microgap breakdown with perturbations from a metal rod floating between anode and cathode electrodes. The effects of the metal rod on the electric field distribution and the field enhancement factor are evaluated by numerical simulation and the conformal mapping method, and they indicate that the field emission regime is not reached. The breakdown voltages in the Townsend discharge regime are determined based on the voltage–current characteristics, which are obtained from two-dimensional fluid simulations. It is found that the breakdown characteristics can be significantly modulated by the floating metal rod, and the breakdown curve (breakdown voltage vs the net gap distance) is no longer U-shaped, which deviates from the conventional Paschen's law. The underlying physical mechanisms are related to the electric field enhancement, curved breakdown path, and nonuniform ion flux caused by the electric shielding effect. The results provide insights into breakdown characteristics in microscale discharges, which may promote conventional investigation of simplified clean gaps toward more complex conditions (e.g., with floating microparticles) in miniaturized plasma devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Impact of 12-nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level

Here, this article presents a comparative analysis of total ionizing dose (TID) response in GlobalFoundries’ (GF) 12 low-power (LP) and 12LP+12-nm bulk fin field effect transistor (FinFET) technologies using 10-keV X-rays. Our findings show that 12LP+ n-type transistors demonstrate higher sensitivity to TID degradation of the off-state leakage drain current compared to 12LP. Data indicate that for both 12LP and 12LP+, transistors with higher threshold voltages (VTs) exhibit lower off-state drain-source leakage postirradiation compared to transistors with lower VTs. Data consistently show that transistors with fewer fins per transistor show superior TID tolerance, in both 12LP and 12LP+ technologies. Lower VT transistors in both technologies display similar preirradiation leakage currents. On the other hand, higher VT transistors in 12LP+ show lower preirradiation leakage currents than those in 12LP, highlighting that the front-end-of-line of 12LP+ technology has been modified compared to 12LP. p-type devices in 12LP+ presented negligible degradation. Larger TID sensitivity in 12LP+ might be attributed to the implementation of dual-metal gate work functions, reduced halo doping, deeper source/drain (S/D) doping profiles, and/or 12LP+ having narrower fins compared to 12LP.

Dual-metal gate work functions↗
DOE OSTI2025

Ultrasonic Characterization of Lithium Ion Thermal Runaway Conditions for Real-time Ultrasonic Enabled BMS Integration

The demand for energy storage is growing, and lithium-ion batteries are a promising technology to meet this need due to their high power/energy density, high round-trip efficiency, rapid response time, and portability. However, recent catastrophic events caused by thermal runaway have slowed their adoption, highlighting the need for an early warning system for battery failure. In this work, ultrasound is used to detect physical changes in 950 mAh batteries by identifying material property changes independent of voltage and current. [Ultrasound signal features (e.g., time of flight, maximum frequency component) were extracted as the batteries were cycled and subjected to both constant current and constant voltage overcharge and were used to develop two metrics identifying failure: a warning to detect the start of overcharge and an emergency stop (E-stop) to immediately take the battery out of service. The identification method involved locating magnitude differences of several ultrasound features compared to baseline operation considering different currents and temperatures, and the warning/stopping metrics were consistent across all experiments. For an average overcharge time of 140 minutes, the average warning was issued 124 minutes before the failure and the average E-stop was triggered 94 minutes before failure. As a test of using ultrasound for early warning detection, a battery was forced into overcharge and returned to normal cycling conditions based on the previously determined warning metric. Both the voltage profile and the ultrasound measurements returned to their baseline behavior, indicating that ultrasonic detection can not only identify battery failure before a catastrophic event, but can also provide early enough warnings such that overcharges can be detected and corrected quickly enough so the battery does not need to be decommissioned.]

25 ENERGY STORAGE↗
NASA NTRS1969

Battery charge-discharge controller

Charge-discharge controller contains punched-tape programmer capable of programming 305 discrete steps in the battery load. The indicating instrumentation includes meters for ampere-hours, watt-hours, voltage, current, and internal temperature and pressure. It also generates analog signals for recording the displayed data.

Ciccanti, A. D.↗
NASA NTRS1974

Experimental Investigation of Electron Cloud Containment in a Nonuniform Magnetic Field

Dense clouds of electrons were generated and studied in an axisymmetric, nonuniform magnetic field created by a short solenoid. The operation of the experiment was similar to that of a low-pressure (approximately 0.000001 Torr) magnetron discharge. Discharge current characteristics are presented as a function of pressure, magnetic field strength, voltage, and cathode end-plate location. The rotation of the electron cloud is determined from the frequency of diocotron waves. In the space charge saturated regime of operation, the cloud is found to rotate as a solid body with frequency close to V sub a/phi sub a where V sub a is the anode voltage and phi suba is the total magnetic flux. This result indicates that, in regions where electrons are present, the magnetic field lines are electrostatic equipotentials (E bar, B bar = 0). Equilibrium electron density distributions suggested by this conditions are integrated with respect to total ionizing power and are found consistent with measured discharge currents.

Eninger, J. E.↗
NASA NTRS1977

Potential damage to dc superconducting magnets due to high frequency electromagnetic waves

Studies of a d.c. superconducting magnet coil indicate that the large coil behaves as a straight waveguide structure. Voltages between layers within the coil sometimes exceeded those recorded at terminals where protective resistors are located. Protection of magnet coils against these excessive voltages could be accomplished by impedance matching throughout the coil system. The wave phenomenon associated with superconducting magnetic coils may create an instability capable of converting the energy of a quiescent d.c. superconducting coil into dissipative a.c. energy, even in cases when dielectric breakdown does not take place.

Gabriel, G. J.↗
NASA NTRS1978

Silicon Solar Cell Process Development, Fabrication and Analysis

Ribbon to Ribbon (RTR) solar cells processed from polycrystalline feedstock showed maximum AMO efficiency of 5.6%. Solar cells from single crystalline feedstock showed slightly higher efficiency than those from polycrystalline feedstock, indicating maximum efficiency of about 6.6% with SiO AR coating. Single crystalline control cells gave 11-12% AMO efficiencies demonstrating that the poor performance of the RTR solar was due to the low quality of material itself. Dendritic web solar cells from the standard process showed maximum AMO efficiency of 9.8% while efficiency of control solar cells were around 11-12%. Web solar cells from back surface field (BSF) process indicated maximum AMO efficiency of 10.9%. Some improvement in open circuit voltage was noticed from the BSF process. Small light spot scanning experiments were carried out on the solar cells from Wacker Silso, EFG, RTR, and dendritic web ribbons. Photoresponse results provided information on localized cell performance and grain size in polycrystalline material, and agreed quite well with the cell performance data, such as efficiency, minority carrier diffusion length, and spectral response.

Yoo, H. I.↗
NASA NTRS1979

Large space system - Charged particle environment interaction technology

Large high-voltage space power systems proposed for future applications in both low earth orbit and geosynchronous altitudes must operate in the space charged-particle environment with possible interactions between this environment and the high-voltage surfaces. The paper reviews the ground experimental work to provide indicators for the interactions that could exist in the space power system. A preliminary analytical model of a large space power system is constructed using the existing NASA Charging Analyzer Program, and its performance in geosynchronous orbit is evaluated. The analytical results are used to illustrate the regions where detrimental interactions could exist and to establish areas where future technology is required.

Stevens, N. J.↗
NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Yoo, H. I.↗
NASA NTRS1983

Hot-spot heating in central-station arrays

Hot spot tests performed on the Sacramento Municipal Utility District (SMUD) verificaton array show that current imbalance occurs, resulting in significant hot spot heating. One cause of current imbalance is differences in the average shunt resistances of parallel cell strings due to cell shunt resistance variations. In depth hot spot tests are performed on the verification array with bypass diodes. The tests had several objectives: (1) a comparison of hot spot temperatures achieved under field conditions with those obtained with the present laboratory hot spot test using similar modules; (2) an assessment of current imbalance versus cross tie frequency; and (3) an assessment of different shadow patterns and shadow densities. Instrumented modules are used to vary the number of cross ties and to measure the test-cell current and back-bias voltage. The widths, lengths, and densities of the shadows are varied to maximize the back bias voltage at maximum power current. An infrared camera is used to indicate the existence of hot spots and estimate temperature increases in conjunction with thermocouples. The results of these hot spot tests indicate a sensitivity of back bias heating to the shadow size (amount of cell coverage) and density.

Gonzalez, C. C.↗
NASA NTRS1988

Detecting Faults In High-Voltage Transformers

Simple fixture quickly shows whether high-voltage transformer has excessive voids in dielectric materials and whether high-voltage lead wires too close to transformer case. Fixture is "go/no-go" indicator; corona appears if transformer contains such faults. Nests in wire mesh supported by cap of clear epoxy. If transformer has defects, blue glow of corona appears in mesh and is seen through cap.

Blow, Raymond K.↗
NASA NTRS1990

Interactions between the Space Station and the environment: A preliminary assessment of EMI

A review of the interactions between proposed Space Station systems/payloads and the environment that contribute to electromagnetic interference was performed. Seven prime sources of interference have been identified. These are: The Space Station power system; active experiments such as beam injection; ASTROMAG; ram and wake density gradients; pick up ions produced by vented or offgassed clouds; waves produced by current loops that include the plasma and structure; arcing from high voltage solar arrays (or possible ESD in polar orbit). This review indicates that: minimizing leakage current from the 20 kHz power system to the structure; keeping the surfaces of the Space Station structure, arrays, and radiators nonconducting; minimizing venting of payloads or systems to non-operational periods; careful placement of payloads sensitive to magnetic field perturbations or wake noise; and designing an operational timeline compatible with experiment requirement are the most effective means of minimizing the effects of this interference. High degrees of uncertainty exist in the estimates of magnitudes of gas emission induced EMI, radiation of 20 kHz and harmonics, ASTROMAG induced interference, and arc threshold/frequency of the solar array. These processes demand further attention so that mitigation efforts are properly calibrated.

Murphy, G. B.↗