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Circuit determines whether voltage is within preselected range of voltage levels.Device requires fewer components than previous window comparators and is less susceptible to errors from reference drift. Comparator is useful in process-control circuitry, measuring instruments, and checkout equipment.
Various government agencies have put forth effort to enable the prediction of what lightning current will do to aircraft avionic systems. Ongoing and future efforts of predicting avionic voltages and currents caused by electromagnetic fields external to the aircraft are illustrated. The Intrasystem Analysis Program (IAP) was put to use to predict lightning-induced voltages on avionic systems. Presently funded programs are investigating the modification nonmetallic composite materials will cause to the metallic IAP program predictions. The various factors involved in designing prediction techniques are discussed.
The power processor operates in several modes, delivering up to 100 amperes of regulated electrical power, operating at input voltages to 375 volts with outputs controlled by an integral microprocessor. Several alternative packaging concepts are discussed and evaluated. High-voltage design applications, power stage interconnection and EMI considerations are also discussed. Preliminary thermal analyses were performed and the results presented for each conceptual approach with parametric study results given for the selected concept.
Knowledge of the floating voltage configuration of a large array in orbit is needed in order to estimate various plasma-interaction effects. The equilibrium configuration of array voltages relative to space depends on the sheath structure. The latter dependence for an exposed array is examined in the light of two finite-sheath effects. One effect is that electron currents may be seriously underestimated. The other is that a potential barrier for electrons can occur, restricting electron currents. A conducting surface is assumed on the basis of a conductivity argument. Finite-sheath effects are investigated. The results of assuming thin-sheath and thick-sheath limits on the floating configuration of a linearly connected array are studied. Sheath thickness and parasitic power leakage are estimated. Numerically computed fields using a 3-D code are displayed in the thick-sheath limit.
Ceramic capacitors failed insulation resistance testing at less than one-tenth their rated voltage. Many failures recovered as the voltage was increased. Comprehensive failure analysis techniques, some of which are unprecedented, were used to examine these failures. It was determined that there was more than one failure mechanism, and the results indicate a need for special additional screening.
The basic methods of differential heterodyne spectroscopy with Josephson junctions are described. A technique is outlined for bridging the gap between a local oscillator frequency and a signal frequency through the use of a voltage-tunable internal oscillation frequency in a Josephson junction structure. It is shown that an intermediate frequency can be converted to a conveniently low frequency by double frequency conversion carried out directly in a Josephson junction. The expected conversion efficiency is estimated qualitatively. Experiments are discussed in which the differential heterodyne frequency-conversion technique was demonstrated at a wavelength of 0.4 mm and a voltage-tunable oscillation in a double Josephson junction structure was observed, with oscillation line widths as narrow as 0.5 Hz, for a resistance of 3.3 nanohms and an estimated inductance of the order of 1 nH.
Improvements in the open circuit voltage of 0.1 ohm-cm silicon solar cells were achieved using a multistep diffusion technique. Experimental details are given along with the results of an analysis that indicate that anomalous behavior of the electron mobility in the cell base limits attainment of higher voltages.
Multikilowatt power levels for future payloads can be more efficiently generated using solar arrays operating in the kilovolt range. This implies that large areas of the array at high operating voltages will be exposed to the space plasma environment. The resulting interactions of these high voltage surfaces with space plasma environments can seriously impact the performance of the satellite system. The plasma-surface interaction phenomena were studied in tests performed in two separate vacuum chambers, a 4.6 m diameter by 19.2 long chamber and a 20 m diameter by 27.4 m long chamber. The generated plasma density was approximately 1x10 to the 4th power/cu cm. Ten solar array panels, each with areas of 1400 sq cm were used in the tests. Nine of the solar panels were tested as a composite unit in the form of a 3x3 solar panel matrix. The results from all the tests confirmed small sample tests results: insulators were found to enhance the plasma coupling current for high positive bias and arcing was found to occur at high negative bias.
The contamination mechanics and resulting failure modes of high voltage electrical insulation due to carbon/graphite fibers were examined. The high voltage insulation vulnerability to carbon/graphite fiber induced failure was evaluated using a contamination system which consisted of a fiber chopper, dispersal chamber, a contamination chamber, and air ducts and suction blower. Tests were conducted to evaluate the effects of fiber length, weathering, and wetness on the insulator's resistance to carbon/graphite fibers. The ability of nuclear, fossil, and hydro power generating stations to maintain normal power generation when the surrounding environment is contaminated by an accidental carbon fiber release was investigated. The vulnerability assessment included only the power plant generating equipment and its associated controls, instrumentation, and auxiliary and support systems.
The results of a 14 month program to improve the open circuit voltage of low resistivity silicon solar cells are described. The approach was based on ion implantation in 0.1- to 10.0-ohm-cm float-zone silicon. As a result of the contract effort, open circuit voltages as high as 645 mV (AMO 25 C) were attained by high dose phosphorus implantation followed by furnace annealing and simultaneous SiO2 growth. One key element was to investigate the effects of bandgap narrowing caused by high doping concentrations in the junction layer. Considerable effort was applied to optimization of implant parameters, selection of furnace annealing techniques, and utilization of pulsed electron beam annealing to minimize thermal process-induced defects in the completed solar cells.
Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.
High open circuit voltage cell designs based on 0.1 Ohm cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power per sq cm. Of the three cell designs, radiation induced degradation was greatest in the high low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short circuit current and open circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.
For efficiency and convenience the voltage applied to a Si solar cell is often fairly rapidly driven from zero to the open circuit value typically at a common rate of 1 V per millisecond. During this time the values of current are determined as a function of the instantaneous voltage thus producing an I-V characteristic. The present paper shows that the customary expressions for the current as a function of cell parameters still remain valid provided that the diffusion length in the expression for the dark current is changed from its steady state value L to the effective diffusion length L1 given by L1 = L(1 + qV/kT.tau) to the -1/2, where V is the ramp rate considered constant and tau is the lifetime of minority carriers. This result is true to a very good approximation provided that low level injection prevails.
Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of a HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.
Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.
Improvements in the open-circuit voltage of 0.1 ohm-cm silicon solar cells have been achieved using a multistep diffusion technique. Experimental details are given along with the results of an analysis that indicate that anomalous behaviors of the electron mobility in the cell base limits attainment of higher voltages.
A power factor type motor controller is disclosed in which the conventional power factor constant voltage command signal is replaced during a starting interval with a graduated control voltage. This continuation-impart of a pending patent application (Serial No. 199, 765: Three Phase Factor Controller) provides a means for modifying the operation of the system for a motor start-up interval of 5 to 30 second. Using a ramp generators, an initial ramp-like signal replaces a constant power factor signal supplied by a potentiometer. The ramp-like signal is applied to a 15 terminal where it is summed with an operating power factor signal from phase detectors in order to obtain a control signal for ultimately controlling SCR devices. The SCR devices are turned on at an advancing rate with time responsive to the combination signal described rather than simply a function of a ramp-like signal alone.
Design considerations, fabrication procedures, and methods of evaluation for high-voltage power-transistor development are discussed. Technique improvements such as controlling the electric field at the surface and perserving lifetimes in the collector region which have advanced the state of the art in high-voltage transistors are discussed. These improvements can be applied directly to the development of 1200 volt, 200 ampere transistors.