Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “thickness”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Defect Annihilation in the Directed Self-Assembly of Block Copolymers in Films with Increasing Thickness.

We investigate directed self-assembly (DSA), with 3x density multiplication, of symmetric polystyrene-block-poly(methyl methacrylate) (L-0 = 28 nm) with increasing film thicknesses and reveal a thickness limit above which the defect annihilation mechanism is different than in thinner films. Block copolymer films of increasing thickness underwent DSA on a macroscopic chemical pattern under optimum geometrical and chemical conditions. Scanning electron microscopy and grazing-incidence small-angle X-ray scattering (GISAXS) were used to characterize the long-range ordering and buried structures as a function of film thickness and thermal annealing time. Rotational GISAXS measurements revealed a critical thickness of similar to 3L(0,) below which defect annihilation is cooperative across the film depth and above which it is faster at the free surface than in the film's interior. In the latter case, defects can persist in the film's interior despite perfect assembly and registration at the free surface of the film.

Chen, Xuanxuan↗
DOE OSTI2020

Thickness-Tunable Self-Assembled Colloidal Nanoplatelet Films Enable Ultrathin Optical Gain Media

We propose and demonstrate construction of highly uniform, multilayered superstructures of CdSe/CdZnS core/shell colloidal nanoplatelets (NPLs) using liquid interface self-assembly. These NPLs are sequentially deposited onto a solid substrate into slabs having monolayer-precise thickness across tens of cm(2) areas. Because of near-unity surface coverage and excellent uniformity, amplified spontaneous emission (ASE) is observed from an uncharacteristically thin film having 6 NPL layers, corresponding to a mere 42 nm thickness. Furthermore, systematic studies on optical gain of these NPL superstructures having thicknesses ranging from 6 to 15 layers revealed the gradual reduction in gain threshold with increasing number of layers, along with a continuous spectral shift of the ASE peak (similar to 18 nm). These observations can be explained by the change in the optical mode confinement factor with the NPL waveguide thickness and propagation wavelength. This bottom-up construction technique for thickness-tunable, three-dimensional NPL superstructures can be used for large-area device fabrication.

Erdem, Onur↗
DOE OSTI2023

Three‐Dimensional Magnetic Reconnection Spreading in Current Sheets of Non‐Uniform Thickness

Abstract Magnetic reconnection in naturally occurring and laboratory settings often begins locally and elongates, or spreads, in the direction perpendicular to the plane of reconnection. Previous work has largely focused on current sheets with a uniform thickness, for which the predicted spreading speed for anti‐parallel reconnection is the local speed of the current carriers. We derive a scaling theory of three‐dimensional (3D) spreading of collisionless anti‐parallel reconnection in a current sheet with its thickness varying in the out‐of‐plane direction, both for spreading from a thinner to thicker region and a thicker to thinner region. We derive an expression for calculating the time it takes for spreading to occur for a current sheet with a given profile of its thickness. A key result is that when reconnection spreads from a thinner to a thicker region, the spreading speed in the thicker region is slower than both the Alfvén speed and the speed of the local current carriers by a factor of the ratio of thin to thick current sheet thicknesses. This is important because magnetospheric and solar observations have previously measured the spreading speed to be slower than previously predicted, so the present mechanism might explain this feature. We confirm the theory via a parametric study using 3D two‐fluid numerical simulations. We use the prediction to calculate the time scale for reconnection spreading in Earth's magnetotail during geomagnetic activity. The results are also potentially important for understanding reconnection spreading in solar flares and the dayside magnetopause of Earth and other planets.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Quantification of thickness and wrinkling of exfoliated two-dimensional zeolite nanosheets

Some two-dimensional (2D) exfoliated zeolites are single- or near single-unit cell thick silicates that can function as molecular sieves. Although they have already found uses as catalysts, adsorbents and membranes precise determination of their thickness and wrinkling is critical as these properties influence their functionality. Here we demonstrate a method to accurately determine the thickness and wrinkles of a 2D zeolite nanosheet by comprehensive 3D mapping of its reciprocal lattice. Since the intensity modulation of a diffraction spot on tilting is a fingerprint of the thickness, and changes in the spot shape are a measure of wrinkling, this mapping is achieved using a large-angle tilt-series of electron diffraction patterns. As a result, application of the method to a 2D zeolite with MFI structure reveals that the exfoliated MFI nanosheet is 1.5 unit cells (3.0 nm) thick and wrinkled anisotropically with up to 0.8 nm average surface roughness.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Unit-cell thick BaTiO{sub 3} blocks octahedral tilt propagation across oxide heterointerface

We fabricated SrRuO{sub 3}/BaTiO{sub 3}/GdScO{sub 3} heterostructures in which the BaTiO{sub 3} layer is one unit cell thick by pulsed laser deposition and elucidated how the BaTiO{sub 3} layer influences structural and magneto-transport properties of the SrRuO{sub 3} layer through octahedral connections across the heterointerface. Our X-ray-diffraction-based structural characterizations show that while an epitaxial SrRuO{sub 3} layer grown directly on a GdScO{sub 3} substrate is in the monoclinic phase with RuO{sub 6} octahedral tilts, a one-unit-cell-thick BaTiO{sub 3} layer inserted between SrRuO{sub 3} and GdScO{sub 3} stabilizes the tetragonal SrRuO{sub 3} layer with largely reduced RuO{sub 6} tilts. Our high-angle annular dark-field and annular bright-field scanning transmission electron microscopy observations provide an atomic-level view of the octahedral connections across the heterostructure and reveal that the BaTiO{sub 3} layer only one unit cell thick is thick enough to stabilize the RuO{sub 6}-TiO{sub 6} octahedral connections with negligible in-plane oxygen atomic displacements. This results in no octahedral tilts propagating into the SrRuO{sub 3} layer and leads to the formation of a tetragonal SrRuO{sub 3} layer. The magneto-transport property characterizations also reveal a strong impact of the octahedral connections modified by the inserted BaTiO{sub 3} layer on the spin-orbit interaction of the SrRuO{sub 3} layer. The SrRuO{sub 3} layer on BaTiO{sub 3}/ GdScO{sub 3} has in-plane magnetic anisotropy. This is in contrast to the magnetic anisotropy of the monoclinic SrRuO{sub 3} films on the GdScO{sub 3} substrate, in which the easy axis is ∼45° to the film surface normal. Our results demonstrate that the one-unit-cell-thick layer of BaTiO{sub 3} can control and manipulate the interfacial octahedral connection closely linked to the structure-property relationship of heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Optical spectroscopy of sputtered nanometer-thick yttrium iron garnet films

Nanometer (nm)-thick yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) films present interest for spintronics. This work employs spectral ellipsometry and magneto-optic Kerr effect (MOKE) spectra to characterize nm-thick YIG films grown on single-crystal Gd{sub 3}Ga{sub 5}O{sub 12} substrates by magnetron sputtering. The thickness (t) of the films ranges between 10 nm and 40 nm. Independent on t, the polar MOKE hysteresis loops saturate in the field of about 1.8 kOe, consistent with the saturation magnetization in bulk YIG (4πM{sub s} ≈ 1.75 kG). The MOKE spectrum measured at photon energies between 1.3 eV and 4.5 eV on the 38-nm-thick film agrees with that measured on single-crystal YIG bulk materials. The MOKE spectrum of the 12-nm-thick film still preserves the structure of the bulk YIG but its amplitude at lower photon energies is modified due to the fact that the radiation penetration depth exceeds 20 nm. The t dependence of the MOKE amplitude is consistent with MOKE calculations. The results indicate that the films are stoichiometric, strain free, without Fe{sup 2+}, and preserve bulk YIG properties down to t ≈ 10 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effect of photoanode thickness on electrochemical performance of dye sensitized solar cell

The thickness of photoanode is crucial as it adsorbed a large amount of dye molecules that provide electrons for generation of electricity in dye sensitized solar cell (DSC). Thus, in order to realize the practical application of DSC, study on various thickness of photoanode need to be carried out to analyze its effect on the electrochemical behavior of dye sensitized solar cell. To enhance the conversion efficiency, an additional layer of TiO{sub 2} using TiCl{sub 4} treatment was deposited prior to the deposition of the photoanode (active area of 1cm{sup 2}) with the thickness of 6, 12, 18, 24, and 30 µm on fluorine doped tin oxide (FTO) glass substrate. The resulting photoanode after the soak in N719 dye for more than 12hrs were used to be assembled in a test cell in combination with liquid electrolyte and counter electrode. The fabricated cells were characterized by solar simulator, ultraviolet-visible spectroscopy (UV-VIS), and electrochemical impedance spectroscopy (EIS). Scanning electron microscopy (SEM) was used to approximate the thickness of photoanode. An optimum power conversion efficiency of 4.54% was obtained for the cell fabricated with 18 µm photoanode thickness. This is attributed to the reduced resistance related to electron transport in the TiO{sub 2}/dye/electrolyte interface as proven by the EIS result. This led to the reduction of internal resistance, the increase in the electron life time and the improvement in the conversion efficiency.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructures on Si(111) substrate with three buffer thickness (600 nm/400 nm/200 nm) have been reported. An unique growth process has been developed that supports lower temperature epitaxy of GaN buffer which minimizes thermally generated tensile strain through appropriate nitridation and AlN initiated epitaxy for achieving high quality GaN buffer which supports such ultra-thin heterostructures in the range of 10-15Å. It is followed by investigations of role of buffer thickness on formation of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructure, in terms of stress-strain and threading dislocation (TD). Structural characterization were performed by High-Resolution X-Ray Diffraction (HRXRD), room-temperature Photoluminescence (RT-PL), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Analysis revealed increasing biaxial tensile stress of 0.6918 ± 0.04, 1.1084, 1.1814 GPa in heterostructures with decreasing buffer thickness of 600, 400, 200 nm respectively which are summed up with residual tensile strain causing red-shift in RT-PL peak. Also, increasing buffer thickness drastically reduced TD density from the order 10{sup 10} cm{sup −2} to 10{sup 8} cm{sup −2}. Surface morphology through AFM leads to decrease of pits and root mean square value with increasing buffer thickness which are resulted due to reduction of combined effect of strain and TDs.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Simultaneous thickness and thermal conductivity measurements of thinned silicon from 100 nm to 17 μm

Studies of size effects on thermal conductivity typically necessitate the fabrication of a comprehensive film thickness series. In this Letter, we demonstrate how material fabricated in a wedged geometry can enable similar, yet higher-throughput measurements to accelerate experimental analysis. Frequency domain thermoreflectance (FDTR) is used to simultaneously determine the thermal conductivity and thickness of a wedged silicon film for thicknesses between 100 nm and 17 μm by considering these features as fitting parameters in a thermal model. FDTR-deduced thicknesses are compared to values obtained from cross-sectional scanning electron microscopy, and corresponding thermal conductivity measurements are compared against several thickness-dependent analytical models based upon solutions to the Boltzmann transport equation. Our results demonstrate how the insight gained from a series of thin films can be obtained via fabrication of a single sample.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thickness and temperature dependence of the atomic-scale structure of SrRuO 3 thin films

The temperature-dependent layer-resolved structure of 3 to 44 unit cell thick SrRuO 3 (SRO) films grown on Nb-doped SrTiO 3 substrates is investigated using a combination of high-resolution synchrotron x-ray diffraction and high-resolution electron microscopy to understand the role that structural distortions play in suppressing ferromagnetism in ultra-thin SRO films. The oxygen octahedral tilts and rotations and Sr displacements characteristic of the bulk orthorhombic phase are found to be strongly dependent on temperature, the film thickness, and the distance away from the film–substrate interface. For thicknesses, t, above the critical thickness for ferromagnetism (t > 3 uc), the orthorhombic distortions decrease with increasing temperature above T C . Below T C , the structure of the films remains constant due to the magneto-structural coupling observed in bulk SRO. The orthorhombic distortions are found to be suppressed in the 2–3 interfacial layers due to structural coupling with the SrTiO 3 substrate and correlate with the critical thickness for ferromagnetism in uncapped SRO films.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Strain- and thickness-dependent magnetic properties of epitaxial La 0.67 Sr 0.33 CoO 3 /La 0.67 Sr 0.33 MnO 3 bilayers

Magnetic properties and interfacial phenomena of epitaxial perovskite oxides depend sensitively on parameters such as film thickness and strain state. In this work, epitaxial La0 .67 Sr 0.33 CoO 3 (LSCO)/La 0.67 Sr 0.33 MnO 3 (LSMO) bilayers were grown on NdGaO 3 (NGO) and LaAlO 3 (LAO) substrates with a fixed LSMO thickness of 6 nm, and LSCO thickness (t LSCO ) varying from 2 to 10 nm. Soft x-ray magnetic spectroscopy revealed that magnetically active Co 2+ ions that strongly coupled to the LSMO layer were observed below a critical t LSCO for bilayers grown on both substrates. On LAO substrates, this critical thickness was 2 nm, above which the formation of Co 2+ ions was quickly suppressed leaving only a soft LSCO layer with mixed valence Co 3+ /Co 4+ ions. The magnetic properties of both LSCO and LSMO layers displayed strong t LSCO dependence. This critical t LSCO increased to 4 nm on NGO substrates, and the magnetic properties of only the LSCO layer displayed t LSCO dependence. A non-magnetic layer characterized by Co 3+ ions and with a thickness below 2 nm exists at the LSCO/substrate interface for both substrates. Therefore, the results contribute to the understanding of interfacial exchange spring behavior needed for applications in next generation spintronic and magnetic memory devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Thickness dependent OER electrocatalysis of epitaxial thin film of high entropy oxide

High entropy oxides (HEOs), which contain multiple elements in the same crystallographic site, are a promising platform for electrocatalysis in oxygen evolution reaction (OER). Investigating these materials in epitaxial thin film form expands the possibility of tuning OER activity by several means, which are not realizable in polycrystalline samples. To date, very few such studies have been reported. In this work, the OER activity of single-crystalline thin films of (La 0.2 Pr 0.2 Nd 0.2 Sm 0.2 Eu 0.2 )NiO 3 , grown on NdGaO 3 substrates have been investigated in 0.1 M KOH electrolyte as a function of film thickness. The OER activity increases with the thickness of the film. X-ray absorption spectroscopy measurements find an increase in Ni $d$-O $p$ covalency and a decrease in charge transfer energy with the increase in film thickness. These facilitate higher charge transfer between Ni and surface adsorbates, increasing OER activity. However, the OER process leads to excessive leaching of thicker films and the OER activity of a 75 unit cell thick film is found to be optimal in the present study. In conclusion, this work demonstrates that the thickness of perovskite oxides can be used as a parameter to enhance OER activity.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs

We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence technique. Multiple mechanisms related to efficiency loss are independently examined, including injection efficiency, carrier density vs current density relationship, phase space filling, quantum-confined Stark effect, and Coulomb enhancement. An optimal QW thickness of around 2.7 nm in these InGaN/GaN LEDs was determined for QWs having constant In composition. Despite improved control of deep-level defects and lower carrier density at a given current density, LEDs with thin QWs still suffer from an imbalance in enhancement effects on the radiative and intrinsic Auger–Meitner recombination coefficients. The imbalance in enhancement effects results in a decline in internal quantum efficiency and radiative efficiency with decreasing QW thickness at low current density in LEDs with QW thicknesses below 2.7 nm. Here, we also investigate how LED modulation bandwidth varies with QW thickness, identifying the key trends and their implications for device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Deformation mechanisms of ultra-thin Al layers in Al/SiC nanolaminates as a function of thickness and temperature

The mechanical properties of Al/SiC nanolaminates with layer thicknesses between 10 and 100 nm were studied by nanoindentation in the temperature range 25 to 100 °C. The strength of the Al layers as a function of the layer thickness and temperature was obtained from the hardness of the nanolaminates by an inverse methodology based on the numerical simulation of the nanoindentation tests by means of the finite element method. The room temperature yield stress of the Al layers showed a large ‘the thinner, the stronger’ effect, which depended not only on the layer thickness but also on the microstructure, which changed with the Al layer thickness. The yield stress of the Al layers at ambient temperature was compatible with a deformation mechanism controlled by the interaction of dislocations with grain boundaries for the thicker layers (>50 nm), while confined layer slip appeared to be dominant for layers below 50 nm. There was a dramatic reduction in the Al yield stress with temperature, which increased as the Al layer thickness decreased, and led to an inverse size effect at 100 °C. In conclusion, this behavior was compatible with plastic deformation mechanisms controlled by grain boundary and interface diffusion at 100 °C, which limit the strength of the ultra-thin Al layers.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Structural phase diagram for ultra-thin epitaxial Fe 3 O 4 / MgO(0 01) films: thickness and oxygen pressure dependence

A systematic investigation of the thickness and oxygen pressure dependence for the structural properties of ultra-thin epitaxial magnetite (Fe 3 O 4 ) films has been carried out; for such films, the structural properties generally differ from those for the bulk when the thickness ≤10 nm. Iron oxide ultra-thin films with thicknesses varying from 3 nm to 20 nm were grown on MgO (001) substrates using molecular beam epitaxy under different oxygen pressures ranging from 1 × 10 -7 torr to 1 × 10 -5 torr. The crystallographic and electronic structures of the films were characterized using low energy electron diffraction (LEED) and x-ray photoemission spectroscopy (XPS), respectively. Moreover, the quality of the epitaxial Fe 3 O 4 ultra-thin films was judged by magnetic measurements of the Verwey transition, along with complementary XPS spectra. We observed that under the same growth conditions the stoichiometry of ultra-thin films under 10 nm transforms from the Fe 3 O 4 phase to the FeO phase. In this work, a phase diagram based on thickness and oxygen pressure has been constructed to explain the structural phase transformation. It was found that high-quality magnetite films with thicknesses ≤20 nm formed within a narrow range of oxygen pressure. An optimal and controlled growth process is a crucial requirement for the accurate study of the magnetic and electronic properties for ultra-thin Fe 3 O 4 films. Furthermore, these results are significant because they may indicate a general trend in the growth of other oxide films, which has not been previously observed or considered.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Anomalous thickness-dependent electrical conductivity in van der Waals layered transition metal halide, Nb 3 Cl 8

Understanding the electronic transport properties of layered, van der Waals transition metal halides (TMHs) and chalcogenides is a highly active research topic today. Of particular interest is the evolution of those properties with changing thickness as the 2D limit is approached. Here, we present the electrical conductivity of exfoliated single crystals of the TMH, cluster magnet, Nb 3 Cl 8 , over a wide range of thicknesses both with and without hexagonal boron nitride (hBN) encapsulation. The conductivity is found to increase by more than three orders of magnitude when the thickness is decreased from 280 µm to 5 nm, at 300 K. At low temperatures and below ~50 nm, the conductance becomes thickness independent, implying surface conduction is dominating. Temperature dependent conductivity measurements indicate Nb 3 Cl 8 is an insulator, however, the effective activation energy decreases from a bulk value of 310 meV to 140 meV by 5 nm. X-ray photoelectron spectroscopy (XPS) shows mild surface oxidation in devices without hBN capping, however, no significant difference in transport is observed when compared to the capped devices, implying the thickness dependent transport behavior is intrinsic to the material. A conduction mechanism comprised of a higher conductivity surface channel in parallel with a lower conductivity interlayer channel is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

The dependence of tungsten fuzz layer thickness and porosity on tungsten deposition rate and helium ion fluence

Abstract Fuzz formation on a heated tungsten surface in the presence of a helium-containing plasma and tungsten deposition source was investigated. Tungsten samples were exposed at 1123 K to pure helium plasma with ion incident energy of 76 eV, W/He ion flux ratio of ∼ 0.4 × 10 − 4 , and varied helium ion fluence from 0.18 to 3.4 × 10 26 m −2 . Fuzz thickness was measured by cross-sectional scanning electron microscopy to increase from 0.22 to 15 µ m with increasing helium ion fluence. No indication of saturation in fuzz thickness at high fluence was observed, in contrast to fuzz produced on a tungsten surface without tungsten deposition. Additional tungsten samples were exposed at 1123 K to pure helium plasma with ion incident energy of 76 eV, helium ion fluence of ∼ 3.4 × 10 26 m −2 , and varied W/He ion flux ratio from 0.26 to 3.0 × 10 − 4 . Fuzz thickness increased from 7.5 to 120 µ m with increasing W/He ion ratio. A final sample exposed at 1123 K to a mixed helium-deuterium plasma with ion incident energy of 76 eV, helium ion fluence of 0.18 × 10 26 m −2 , and W/He ion flux ratio of 2.2 × 10 − 4 developed nearly identical fuzz structures to that developed in a pure He plasma. As a function of deposited tungsten fluence, all results were found to trace out a single layer-growth curve given by a power law relation, indicating that fuzz thickness is independent of the W/He ion flux ratio in the range investigated and independent of any deuterium present in the plasma. As a result, for tungsten plasma facing walls in magnetic fusion devices at 1000–2000 K with 10 −4 W/He ion flux ratio, fuzz with thicknesses greater than hundreds of microns may form in as little as 10 4 s (in the absence of ELM-induced erosion or annealing), and may more significantly affect its thermophysical properties than fuzz generated without a tungsten deposition source.

Physics↗
DOE OSTI2015

ON THE FORMATION OF GALACTIC THICK DISKS

Recent spectroscopic observations in the Milky Way suggest that the chemically defined thick disk (stars that have high [α/Fe] ratios and are thus old) has a significantly smaller scale-length than the thin disk. This is in apparent contradiction with observations of external edge-on galaxies, where the thin and thick components have comparable scale-lengths. Moreover, while observed disks do not flare (scale-height does not increase with radius), numerical simulations suggest that disk flaring is unavoidable, resulting from both environmental effects and secular evolution. Here we address these problems by studying two different suites of simulated galactic disks formed in the cosmological context. We show that the scale-heights of coeval populations always increase with radius. However, the total population can be decomposed morphologically into thin and thick disks, which do not flare. We relate this to the disk inside-out formation, where younger populations have increasingly larger scale-lengths and flare at progressively larger radii. In this new picture, thick disks are composed of the imbedded flares of mono-age stellar populations. Assuming that disks form inside out, we predict that morphologically defined thick disks must show a decrease in age (or [α/Fe] ratios) with radius and that coeval populations should always flare. This also explains the observed inversion in the metallicity and [α/Fe] gradients for stars away from the disk midplane in the Milky Way. The results of this work are directly linked to, and can be seen as evidence of, inside-out disk growth.

79 ASTRONOMY AND ASTROPHYSICS↗