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At least 343 records · Page 19

Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field-Free Spin–Orbit-Torque Switching

Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe3GeTe2 (FGT) are reported. Additionally, the orientation of the exchange bias is along the in-plane easy axis of CrSBr, perpendicular to the out-of-plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in-plane exchange bias provides sufficient symmetry breaking to allow deterministic spin–orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non-zero exchange bias at 30 K.

36 MATERIALS SCIENCE↗

Phase Synergy Enables Low‐Power Ferroelectric Switching in HfO 2 Epitaxial Films

HfO 2 -based ferroelectric materials have emerged as leading candidates for next-generation non-volatile memory technologies, owing to their nanoscale robust ferroelectricity and complementary metal–oxide–semiconductor (CMOS) compatibility. However, challenges and debates persist in advancing and comprehensively understanding their ferroelectric behavior. In particular, conventional approaches typically regard non-ferroelectric phases as detrimental and primarily focus on suppressing their formation, yet overlooking their potentially synergistic contributions—particularly those of the tetragonal (T) phase. Here, we unambiguously clarify the beneficial role of the T-phase and introduce a phase-boundary engineering strategy that deliberately harnesses it to enhance ferroelectricity in HfO 2 films. By stabilizing optimal coherent boundaries between ferroelectric orthorhombic (O) and T phases in epitaxial La-doped HfO 2 films, we achieve significant improvements in ferroelectric properties—doubling the remanent polarization (P r ∼ 30 µC/cm 2 ) and substantially reducing the coercive field (E c ∼ 3 MV/cm) by 30% compared to low-La doped samples without such boundaries. Atomic-scale electron microscopy reveals the structural nature of the atomically sharp, coherent O–T boundaries. Combined with deep-learning enhanced molecular dynamics simulations, our results unravel that these boundaries facilitate intermediate polarization states that lower the switching energy barrier. Consequently, phase coexistence shifts from an inherent drawback to a tunable design element, offering a broadly applicable route to ultra-low-power HfO 2 -based nanoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electrical Switching of Nematic Plasmonic Nanocolloids for Infrared Solar Gain Control

Controlling solar gain is essential to reduce the energy consumption by residential and commercial buildings, which are responsible for ≈40% of all energy generated globally. However, the dynamic control of solar gain in the near-infrared that corresponds to ≈50% of the overall Sun's energy at the Earth's surface, separately from the visible spectral range has been a challenge, albeit commercial coatings provide passive control while retaining highly visible transmission. To address this problem, in this paper switchable silver colloids (SSCs) are demonstrated, colloidal analogs of the common silver coatings used for solar gain control. When dispersed in a nematic liquid crystal, orientations of such plasmonic silver nanoplates are controlled by ≈1 V low-voltage electric fields, allowing for sub-second switching of the near-infrared-based solar gain. Installed and retrofit products made from thin films of such nanoplate dispersions confined between glass and plastic substrates, respectively, exhibit electrically controlled infrared-based solar gain while retaining high visible-range transparency, low haze, and high color rendering index. Furthermore, this study's findings reveal a great potential of soft-matter systems in addressing energy-related problems.

36 MATERIALS SCIENCE↗

Comparative assessment of new oxygen carrier materials for gas switching reforming of natural gas: Techno-economics assessment, life cycle analysis, and experimental insights

The increasing demand for hydrogen and the CO 2 intensity of natural gas (NG) reforming motivate the development of low-carbon-emission hydrogen production technologies. Gas Switching Reforming (GSR) with integrated CO 2 capture, a technology based on Chemical Looping Reforming (CLR), has been experimentally proven and shows potential for scale-up. In this study, select oxygen carriers (OC) (NiO/Al 2 O 3 , Fe 2 O 3 -CeO 2 /Al 2 O 3 , and magnetite) were tested in methane steam reforming in a fixed bed reactor to determine their relative reactivities under relevant conditions for GSR (800 °C, 7 bar total pressure). Process models were then developed to perform techno-economic analysis (TEA) of GSR for hydrogen production (GSR-H 2 ) and a combined cycle (GSR-CC) in which high-purity H 2 is fired in a gas turbine to produce electricity. Operating at 10 bar and 1100 °C and with the additional recovery steps implemented increased H 2 production by ∼ 30% and improved efficiency relative to prior studies. For GSR-H 2 , the levelized cost of hydrogen (LCOH) is 1.61–1.64 $/kg-H 2 , competitive with a reference SMR case, though operating and maintenance costs are higher due to increased electricity demand. GSR-CC has a significantly higher levelized cost of electricity (LCOE) than its reference NGCC (natural gas combined cycle) plant, suggesting it is less competitive; however, increasing production scale could make it more attractive. Life-cycle results for GSR-H 2 indicate NG consumption drives ∼ 75% of total global warming impacts (∼2.3 kg CO 2 eq/kg H 2 ). An environmental, health, and safety screening suggests iron-based carriers are comparatively safer, whereas NiO may pose greater risks. Overall, GSR-H 2 is a scalable, competitive option for hydrogen production using nickel and non-nickel OC.

03 NATURAL GAS↗

Life cycle assessment of a novel gas switching reforming for sustainable hydrogen production with CO2 capture

Gas switching reforming for hydrogen production (GSR-H2) presents an efficient, low-carbon hydrogen production method that incorporates integrated carbon capture, offering efficiency gains over traditional methods such as proton exchange membrane (PEM) electrolysis, steam methane reforming (SMR) and the newer method of chemical looping reforming (CLR). GSR-H2 has been demonstrated in lab scale which operates as an exothermic process that eliminates the need for additional natural gas combustion, using its own waste heat to generate process steam and partially offset energy usage through electricity production. Beyond its thermal self-sufficiency, GSR-H2 advances upon CLR by integrating all reaction stages within a single reactor cluster, eliminating the complexities of solid circulation, reducing capital costs, and enhancing overall process efficiency. This streamlined design simplifies scale-up and enables inherent CO2 separation with minimal energy penalty, making GSR-H2 a highly competitive pathway for low-carbon hydrogen production. This study presents the first life cycle assessment (LCA) of GSR-H2, offering a novel evaluation of this new process’s environmental impacts across diverse energy scenarios. Key findings reveal that in the renewables-powered scenario, GSR-H2 achieves a GWP of 2.77 kg CO2 eq per kg H2, a substantial improvement over SMR’s 10.4 kg CO2 eq and close to the low emissions of CLR (1.84 kg CO2 eq) and PEM electrolysis (1.85 kg CO2 eq). These results demonstrate GSR-H2’s competitive advantage as a lower-emission alternative, combining design simplicity and efficiency gains, especially in renewable-integrated systems. These results establish GSR-H2 as a competitive, scalable option for hydrogen production, particularly in decarbonization efforts.

03 NATURAL GAS↗

Data-based and secure switched cyber–physical systems

In this work, we develop a completely model-free moving target defense framework for the detection and mitigation of sensor and/or actuator attacks in cyber–physical systems with dynamics that evolve in discrete-time. We incorporate an intrusion detection mechanism based on an approximate dynamic programming technique that learns the policies for optimal regulation and optimal tracking while simultaneously defending against actuator and sensor attacks in a model-free fashion. Switching rules are leveraged to force proactive and reactive defense mechanisms as well as, guarantee the stability of the equilibrium point. Finally, as a case study, we apply the proposed moving target defense framework to a DC–DC converter that is used in electric vehicles.

42 ENGINEERING↗

Revealing Hot and Long-Lived Metastable Spin States in the Photoinduced Switching of Solvated Metallogrid Complexes with Femtosecond Optical and X-ray Spectroscopies

An atomistic understanding of the photoinduced spin-state switching (PSS) within polynuclear systems of d 4 –d 7 transition metal ion complexes is required for their rational integration into light-driven reactions of chemical and biological interest. However, in contrast to mononuclear systems, the multidimensional dynamics of the PSS in solvated molecular arrays have not yet been elucidated due to the expected complications associated with the connectivity between the metal centers and the strong interactions with the surroundings. Herein, the PSS in a solvated triiron(II) metallogrid complex is characterized using transient optical absorption and X-ray emission spectroscopies on the femtosecond time scale. The complementary measurements reveal the photoinduced creation of energy-rich (hot) and long-lived quintet states, whose dynamics differ critically from their mononuclear congeners. We report this finding opens major prospects for developing novel schemes in solution-phase spin chemistry that are driven by the dynamic PSS process in compact oligometallic arrays.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Ferroelectric Switching in Hybrid Molecular-Beam-Epitaxy-Grown BaTiO 3 Films

Molecular beam epitaxy (MBE) is a promising synthesis technique for both heterostructure growth and epitaxial integration of ferroelectric BaTiO 3 . However, direct measurement of the remnant polarization (P r ) has not been previously reported in MBE-grown BaTiO 3 films. We report the in situ growth of an all-epitaxial SrRuO 3 /BaTiO 3 /SrRuO 3 heterostructure on Nb-doped SrTiO 3 (001) substrates by hybrid MBE using metal–organic precursors. This capacitor structure consisting of 16 nm SrRuO 3 /40 nm BaTiO 3 /16 nm SrRuO 3 shows hysteretic polarization–electric field (P–E) curves with P r ∼ 15 μC cm –2 at frequencies ranging from 500 Hz to 20 kHz, after isolating the intrinsic ferroelectric response from non-ferroelectric contributions using the Positive-Up-Negative-Down (PUND) method. We hypothesize that the asymmetry in switching behavior and current leakage has origins in structural defects. Furthermore, this work opens the door to defect-engineered ferroelectric BaTiO 3 -based heterostructures grown by hybrid MBE for future electronic, photonic and spintronic applications.

SrRuO3 electrode↗

Resistive Switching of Spinel Li 4 Ti 5 O 12 Lithium-Ion Battery Material for Neuromorphic Computing

The rapid rise of AI has exposed significant limitations in conventional Von Neumann computing architecture, particularly in regard to speed and energy efficiency. To address these challenges, researchers are exploring a brain-inspired neuromorphic architecture that mimics biological neural networks, enabling massive parallel processing with reduced power consumption for complex AI computational demands. Recent interest has focused on utilizing battery electrodes and solid electrolyte materials for their resistive switching properties in developing a neuromorphic architecture. These properties are precisely tuned through local- and bulk-level chemical composition modifications via voltage bias stimuli. In this study, we demonstrate fabricating a three-terminal lithium-ion electrochemical transistor based on lithium titanium oxide (Li 4 Ti 5 O 12 ), a popular lithium-ion battery anode material. We deposited and characterized LTO thin films using RF sputtering, demonstrating a 6 orders of magnitude increase in electronic conductivity upon lithiation, with conductivity plateauing after 20% lithiation. Density functional theory calculations revealed transformation from the insulating to conducting state, supported by experimental characterization through X-Ray Photoelectron Spectroscopy (XPS) and Direct Current (DC) polarization analyses. The fabricated transistor consisted of LTO as the channel layer, gold as source/drain terminals, lithium phosphorus oxynitride (LiPON) as the lithium-ion conductor, and copper as the gate terminal. The device exhibited clear hysteresis in transfer characteristics due to lithium insertion/extraction processes. Long-term potentiation (LTP) and long-term depression (LTD) measurements showed an asymmetric ratio of 1.425 and maximum/minimum conductance ratio of 7.83. When implemented in a deep neural network (DNN) for MNIST handwritten digit recognition, the device achieved 92.03% accuracy over 20 training epochs. Detailed transport mechanism analysis revealed the crucial role of oxygen vacancies and interface effects in device operation. Our preliminary findings establish LTO-based lithium-ion electrochemical transistors as promising candidates for energy-efficient neuromorphic computing applications, offering potential solutions to traditional Von Neumann architecture limitations.

25 ENERGY STORAGE↗

Exchange of Ions across the TiN/TaO x Interface during Electroformation of TaO x -Based Resistive Switching Devices

The valence change model describes the resistive switching in metal oxide-based devices as due to electroreduction of the oxide and subsequent electromigration of oxygen vacancies. Here, we present cross-sectional X-ray energy-dispersive spectroscopy elemental maps of Ta, O, N, and Ti in electroformed TiN/TaO 2.0 /TiN structures. O, N, and Ti were exchanged between the anode and the functional oxide in devices formed at high power (~1 mW), but the exchange was below the detection limit at low power (<0.5 mW). All structures exhibit a similar Ta-enriched and O-depleted filament formed by the elemental segregation in the functional oxide by the temperature gradient. The elemental interchange is interpreted as due to Fick’s diffusion caused by high temperatures in the gap of the filament and is not an essential part of electroformation.

36 MATERIALS SCIENCE↗

On-Surface Single-Molecule Identification of Mass-Selected Cyclodextrin-Supported Polyoxovanadates for Multistate Resistive-Switching Memory Applications

Polyoxovanadate anions immobilized on conducting substrates are promising candidates for molecule-based memory technologies. However, strong electronic interactions with the substrate and the formation of larger agglomerates remain bottlenecks on the way to their technical application. We demonstrate that ion soft-landing of mass selected cyclodextrin- functionalized hexavanadates enables to deposit these host-guest complexes as single memory units on surfaces without their quaternary ammonium countercations from solution. The cyclodextrin provides a stabilizing “shell” for the dianions. Further, multistate switching evidenced by the change in molecular resistance has been detected using scanning tunneling microscopy and spectroscopy and attributed to reduction of individual vanadium (+V) centers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Transforming Boron Carbon Nitride: A Carbon-to-Oxygen Switch to Boost Propane Oxidative Dehydrogenation

Hexagonal boron nitride (h-BN) catalysts exhibit high alkene selectivity in the oxidative dehydrogenation of propane (ODHP). Nevertheless, the conversion-selectivity trade-off persisted primarily due to the low density of oxygen-containing boron active species, while simple and controllable modification strategies for h-BN still face challenges. Herein, we developed an in situ carbon-to-oxygen switch strategy within a tailored boron carbon nitride (BCN) framework, in which uniformly embedded B–C 3 were transformed into B–O 3 via oxidative treatment (denoted as BNO x ). The structural evolution from B–C 3 to B–O 3 was well characterized by spectroscopy and soft X-ray absorption techniques. The resulting BNO x catalysts, enriched with B–O 3 units, demonstrated performance in ODHP, achieving a propane conversion of 50.4% with 32.7% olefin yield at 500 °C. Density functional theory (DFT) calculations confirmed that B–O 3 species preferentially lower activation barriers, rendering the process thermodynamically more favorable. In conclusion, this work introduced an in situ reconstruction method for atomic-level heteroatom-engineered h-BN catalysts, opening an avenue for advanced catalyst design across energy conversion systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Design considerations for gallium arsenide pulse compression photoconductive switch

In this paper, we present the physics and design-space exploration of a novel pulse compression photoconductive switch (PCPS) using semi-insulating gallium arsenide (GaAs) operating in the negative differential mobility (NDM) regime of electron transport. We systematically quantify the relationship between the PCPS performance and various design options, including contact separation, laser energy and placement, and trap dynamics. Specifically, we report the full-width at half-maximum and the peak output current generated by the PCPS as a function of applied electrical and optical bias. We discuss the optimal spacing between the electrodes and the distance of the laser spot to the anode to achieve higher electron confinement and superior radio-frequency (RF) metrics. Reducing the laser energy is important to prevent the appearance of secondary peaks due to diffusive transport, but there exists a trade-off between the bandwidth and the maximum current of the PCPS. We also compare the PCPS response with and without trap dynamics and find that the electrostatic screening from the trap-induced space charge is time-independent when the trapping time constant is set larger than the recombination lifetime. Overall, trap dynamics are detrimental to performance, unless the compensation doping scheme to achieve semi-insulating GaAs is carefully selected. Results presented in this paper can be used by experimentalists to fine-tune the PCPS design parameters to meet the specifications of various RF applications. Moreover, our results will provide a strong theoretical basis to the measurements of PCPS devices using GaAs and other NDM materials under investigation.

42 ENGINEERING↗

Broad-range tuning of ferroelectric switching of La x Bi 1−x FeO 3 epitaxial films via digital doping using off-axis co-sputtering

To investigate the scope of ferroelectric behavior in La-substituted BiFeO 3 films, La x Bi 1−x FeO 3 epitaxial films were synthesized using off-axis co-sputtering on SrTiO 3 (001) and DyScO 3 (110) substrates with a SrRuO 3 bottom electrode layer. A digital-doping deposition method was used to enable precise control and continuous tuning of La concentration in high-quality LaxBi 1−x FeO 3 films across a wide range of x = 0.05–0.60, which was systematically investigated using piezoresponse force microscopy. Robust and reversible out-of-plane ferroelectric switching has been observed up to x = 0.35, while films with x ≥ 0.37 exhibit no measurable ferroelectric behavior, indicating a sharp ferroelectric-to-paraelectric phase transition between x = 0.35 and 0.37. This represents the highest reported La concentration in LaxBi 1−x FeO 3 films that retains ferroelectric ordering, highlighting opportunities to engineer ferroelectric and multiferroic properties in complex oxide heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Topological quantum switch and controllable one-dimensional conducting paths in antimonene facilitated by breaking the inversion symmetry

Based on the nontrivial topology of buckled antimonene, we propose two conceptual device designs based on breaking the inversion symmetry which can be achieved by gating. The first one is a quantized topological switch obtained by breaking the degeneracy of the fractionalized charge conducting edge states, inducing a metal-insulator transition. In the second one, using local gating with different polarity in different areas, a domain wall is created at their interface, which hosts a soliton type electronic gap state in which transport could be accessed by doping and shown to be robust over a wide range of disorder.

36 MATERIALS SCIENCE↗

A Two-Step Control Approach for Torque Ripple and Vibration Reduction in Switched Reluctance Motor Drives

The objective of this work is to reduce the torque ripple and vibration in Switched Reluctance Motor (SRM) drives. To achieve such a goal, a two-step approach is proposed. In the first step, the reference current is profiled using an optimization method, aimed to reduce the torque pulsation. In the second, the optimum current profile is applied to the SRM through an adaptive hysteresis band controller to actively cancel the radial vibration. The proposed technique uses an optimization procedure based on the Field Reconstruction Method (FRM) and Non-Derivative Optimization Method to find the optimal current profile that mitigates the torque pulsation, however, the investigation has shown that the proposed excitation leads to a higher radial vibration, which has been mitigated by using an adaptive hysteresis band controller. The theoretical basis for the proposed approach is initially presented, followed by system modeling and simulation. In addition, experimental verification has been conducted using an 8/6 SRM to show the feasibility of the proposed approach. The proposed method alleviates the acoustic noise and torque pulsation in SRM and offers an effective step towards the prevalent use of SRM in a wide range of applications.

42 ENGINEERING↗

Load Shed Recovery With Transmission Switching and Intentional Islanding Methods After (N-2) Line Contingencies

Changing power system configuration may result in load shed recovery (LSR) because topology change can provide power flow control in meshed network. Some topologies may favor generation redispatch as compared to others and can eliminate line congestion which leads to LSR. One of the known methods for topology change is called transmission switching (TS) and research conducted in the past showed that TS is an effective means of mitigating load shedding. Another method of topology control is intentional islanding (IIS). In this manuscript, we explore IIS as a potential solution for LSR. IIS based on generator coherency has been presented in literature for mitigating cascading failures. However, IIS has not been explored solely as a LSR mechanism. In this paper, we compare the LSR based on IIS with well known LSR algorithm based on TS. The comparison is performed for IEEE 39-bus system and IEEE 118- bus system. The results show that IIS has a potential to perform better than TS in terms of computational efficiency and LSR.

42 ENGINEERING↗

Genetic Algorithm-Based Commutation Angle Control for Torque Ripple Mitigation in Switched Reluctance Motor Drives

This work addresses the application of the Genetic Algorithm (GA) technique to optimize the commutation angles of a 2 kW 8/6 switched reluctance machine (SRM). The primary goal is to reduce the well-known drawback of SRMs: the torque ripple. Firstly, the machine was modeled in Matlab /Simulink ® using lookup tables obtained via finite element method (FEM) simulations. Subsequently, the model was used to perform the GA routine aiming to find the optimal phase commutation angles that minimize the torque ripple factor. Notably, the torque performance of the SRM was significantly affected by the commutation angles during the search for the optimal solution. Afterwards, the GA results for four different operation points were verified experimentally through a developed drive platform with digital signal processor-based (DSP) control and an asymmetric bridge converter. As showed by the experiments, the proposed approach was suitable to reduce the torque ripple by more than 50% for one of the evaluated operating points. Furthermore, it was confirmed that the torque ripple mitigation led to acoustic noise improvement.

42 ENGINEERING↗