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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Amorphous silicon deposition diagnostics using coherent anti-Stokes Raman spectroscopy

This paper reports on an in situ silicon deposition process diagnostics, using CARS performed at state-of-the-art a-Si:H film deposition conditions in a reactor designed for a-Si:H solar cell fabrication. The diagnostics procedure measures the silane depletion in an RF plasma as a function of the silane flow rate (where the relationship is linear between 50-percent depletion, at a flow rate of 5.6 sccm, and about 8-percent depletion, at 80 sccm) and the RF power (where the silane depletion is linearly dependent on the RF power in the region of 4 to 12 W). The linear RF power dependence of the silane depletion is considered to be consistent with the mechanism of silane decomposition primarily by electron impact dissociations, while the flow rate dependence is interpreted in terms of the residence time of the SiH4 molecules in the glow discharge region, where an increase of the residence time at a low flow rate results in a high depletion ratio.

Shing, Y. H.↗
NASA NTRS1991

Si(1-x)Ge(x)/Si Infrared Photodiodes

Cutoff wavelengths depend on x and also adjusted somewhat via reverse bias. Si1-xGex photodiodes with cutoff wavelengths in and beyond practically important range of 8 to 12 micrometers made by molecular-beam epitaxy. Compatible (in terms of fabrication processes) with silicon readout circuitry, exhibit long-term stability, manufactured with sufficient uniformity for use in focal-plane arrays; and operate at temperatures approximately greater than 65 K, for which temperatures small, portable refrigerators available.

Lin, True-Lon↗
NASA NTRS1991

Effects of proton irradiation on the performance of InP/GaAs solar cells

InP solar cells are known to be more radiation resistant than either GaAs or Si. In addition, AMO total area efficiencies approaching 19 percent were attained for InP. However, the present high substrate cost presents a barrier to the eventual widespread use of InP cells in space. In addition, if cell thinning becomes desirable, their relative fragility presents a problem. For these reasons, the NASA Lewis Research Center has initiated a program, aimed at producing thin InP cells, by heteroepitaxial deposition of InP on cheaper, more durable substrates. To date, a short term feasibility study as Spire has resulted in cells processed from InP heteroepitaxially deposited on Si substrates with an intervening thin GaAs layer (InP/GaAs/Si) and cells produced from InP deposited on GaAs (InP/GaAs). As a result of this short study efficiencies of over 7 and 9 percent were achieved for InP/GaAs/Si and InP/GaAs respectively. Although these efficiencies are low, they represent a modest and encouraging starting point for a more intensive program. Obviously, when considering economy and mechanical strength, cells processed on silicon substrates are preferred. However, although the InP/GaAs cells are not the final desirable products of this program, their properties serve to highlight several roadblocks to be overcome in producing cells with the more desirable cost and strength properties. Hence, in the present case, the properties of the InP/GaAs cells before and after irradiation by 10 MeV protons are examined. A similar study of InP/GaAs/Si cells will be reported on at a later date.

Weinberg, Irving↗
NASA NTRS1995

Properties of the +70 kilometers per second cloud toward HD 203664

I present high-resolution International Ultraviolet Explorer (IUE) spectra of the ultraviolet absorption in an intermediate-velocity interstellar cloud (nu(sub LSR) approximately equal to +70 km/s) toward HD 203664. The combined, multiple IUE images result in spectra with S/N = 15-40 and resolutions of approximately 20-25 km/s. The intermediate-velocity cloud absorption is present in ultraviolet lines of C II, C II(sup *), C IV, N I, O I, Mg I, Mg II, Al II, Al III, Si II, Si III, Si IV, S II, Cr II, Mn II, Fe II, and Zn II. The relative abundances of low-ionization species suggest an electron density of 0.15-0.34/cu cm and a temperature of 5300-6100 K in the neutral and weakly ionized gas. Given the presence of high-ionization gas tracers such as Si IV and C IV, ionized portions of the cloud probably contribute to the relatively large values of n(sub e) derived from measurements of the lower ionization species. The high-ionization species in the cloud have an abundance ratio, N(C IV)/N(Si IV) approximately equal to 4.5, similar to that inferred for collisionally ionized cloud interfaces at temperatures near 10(exp 5) K along other sight lines. When referenced to sulfur, the abundances of most elements in the cloud are within a factor of 5 of their solar values, which suggests that the +70 km/s gas has a previous origin in the Galactic disk despite a recent determination by Little et al. that the cloud lies at a distance of 200-1500 pc below the Galactic plane. I have checked this result against a model of the ionization for the diffuse ionized gas layer of the Galaxy and find that this conclusion is essentially unchanged as long as the ionization parameter is low as implied by the abundances of adjoining ionization states of aluminum and silicon. The processes responsible for the production of highly ionized gas in the +70 km/s cloud appear to be able to account for the inferred dust grain destruction as well.

Sembach, Kenneth R.↗
NASA NTRS1996

Diffusion-Barrier Contacts For Solar Cells

Electrically conductive diffusion barriers of TaSiN prevent diffusion of metal from overlying metal contacts into underlying silicon during processing at high temperature, improving performance during subsequent use in low-intensity light at low temperature.

Stella, Paul M.↗
NASA NTRS2001

Nanoklystron: A Monolithic Tube Approach to THz Power Generation

The authors propose a new approach to THz power generation: the nanoklystron. Utilizing silicon micromachining techniques, the design and fabrication concept of a monolithic THz vacuum-tube reflex-klystron source is described. The nanoklystron employs a separately fabricated cathode structure composed of densely packed carbon nanotube field emitters and an add-in repeller. The nanotube cathode is expected to increase the current density, extend the cathode life and decrease the required oscillation voltage to values below 100 V. The excitation cavity is based on ridged-waveguide and differs from the conventional cylindrical re-entrant structures found in lower frequency klystrons. A quasi-static field analysis of the cavity and output coupling structure show excellent control of the quality factor and desired field distribution. Output power is expected to occur through an iris coupled matched rectangular waveguide and integrated pyramidal feed horn. The entire circuit is designed so as to be formed monolithically from two thermocompression bonded silicon wafers processed using deep reactive ion etching (DRIE) techniques. To expedite prototyping, a 600 GHz mechanically machined structure has been designed and is in fabrication. A complete numeric analysis of the nanoklystron circuit, including the electron beam dynamics has just gotten underway. Separate evaluation of the nanotube cathodes is also ongoing. The authors will describe the progress to date as well as plans for the immediate implementation and testing of nanoklystron prototypes at 640 and 1250 GHz.

Siegel, Peter H.↗
NASA NTRS2006

Ion Milling On Steps for Fabrication of Nanowires

Arrays of nanowires having controlled dimensions can now be fabricated on substrates, optionally as integral parts of multilayer structures, by means of a cost-effective, high-yield process based on ion milling on steps. Nanowires made, variously, of semiconductors or metals are needed as components of sensors and high-density electronic circuits. Unlike prior processes used to fabricate nanowires, the present process does not involve electron-beam lithography, manipulation of nanoscopic objects by use of an atomic-force microscope, or any other technique that is inherently unsuitable for scaling up to mass production. In comparison with the prior processes, this process is rapid and simple. Wires having widths as small as a few tens of nanometers and lengths as long as millimeters have been fabricated by use of this process. The figure depicts a workpiece at different stages of the process. A silicon dioxide substrate is coated with a photoresist or poly(methyl methacrylate) [PMMA] to a thickness of as much as 500 nm. The photoresist or PMMA is patterned to form edges where wires are to be formed. A metal - either Pt or Ti - is deposited, by sputtering, to a thickness of as much as 200 nm. By ion milling at normal incidence, the thickness of the metal deposit is reduced until the only metal that remains is in the form of wall-like nanowires along the edges of the photoresist or PMMA. Finally, an oxygen plasma is used to remove the photoresist or PMMA, leaving only the nanowires on the substrate.

Yun, Minhee↗
NASA NTRS2012

Verilog-A Device Models for Cryogenic Temperature Operation of Bulk Silicon CMOS Devices

Verilog-A based cryogenic bulk CMOS (complementary metal oxide semiconductor) compact models are built for state-of-the-art silicon CMOS processes. These models accurately predict device operation at cryogenic temperatures down to 4 K. The models are compatible with commercial circuit simulators. The models extend the standard BSIM4 [Berkeley Short-channel IGFET (insulated-gate field-effect transistor ) Model] type compact models by re-parameterizing existing equations, as well as adding new equations that capture the physics of device operation at cryogenic temperatures. These models will allow circuit designers to create optimized, reliable, and robust circuits operating at cryogenic temperatures.

Akturk, Akin↗
NASA NTRS2017

Comparison of Multiscale Method of Cells-Based Models for Predicting Elastic Properties of Filament Wound C/C-SiC

Three different multiscale models, based on the method of cells (generalized and high fidelity) micromechanics models were developed and used to predict the elastic properties of C/C-SiC composites. In particular, the following multiscale modeling strategies were employed: Concurrent multiscale modeling of all phases using the generalized method of cells, synergistic (two-way coupling in space) multiscale modeling with the generalized method of cells, and hierarchical (one-way coupling in space) multiscale modeling with the high fidelity generalized method of cells. The three models are validated against data from a hierarchical multiscale finite element model in the literature for a repeating unit cell of C/C-SiC. Furthermore, the multiscale models are used in conjunction with classical lamination theory to predict the stiffness of C/C-SiC plates manufactured via a wet filament winding and liquid silicon infiltration process recently developed by the German Aerospace Institute.

multiscale modeling↗
NASA NTRS1976

Silicon solar cells by ion implantation and pulsed energy processing

A new method for fabrication of silicon solar cells is being developed around ion implantation in conjunction with pulsed electron beam techniques to replace conventional furnace processing. Solar cells can be fabricated totally in a vacuum environment at room temperature. Cells with 10% AM0 efficiency have been demonstrated. High efficiency cells and effective automated processing capabilities are anticipated.

Kirkpatrick, A. R.↗
NASA NTRS1984

A hybrid silicon membrane spatial light modulator for optical information processing

A new two dimensional, fast, analog, electrically addressable, silicon based membrane spatial light modulator (SLM) was developed for optical information processing applications. Coherent light reflected from the mirror elements is phase modulated producing an optical Fourier transform of an analog signal input to the device. The DMD architecture and operating parameters related to this application are presented. A model is developed that describes the optical Fourier transform properties of the DMD.

Pape, D. R.↗
DOE OSTI2025

Low embodied energy and carbon, high lifetime silicon boules via a combined chemical vapor deposition/float zone process

This work evaluates a new process route to making float zone (Fz)-quality silicon wafers using a combination of computational fluid dynamics (CFD) modeling and technoeconomic analysis. Our analysis finds that the new process competes with Czochralski (Cz)-grown wafers on a levelized cost of energy system level. The new process also decreases embodied energy and carbon of silicon photovoltaics (PV) by ~6x circumventing the energy-costly Siemens process used in polycrystalline silicon (poly-Si) production plants to generate feedstock for Fz and Cz boules. Instead of using poly-Si from the Siemens process to feed crystallization, the new process uses the high-purity, trichlorosilane (TCS) precursor gas to grow a poly-Si feed rod in-situ during a modified Fz1,2 boule growth process. The gas-to-boule float zone process enables opportunity to produce high-purity (low metals and oxygen content), uniformly doped single crystal silicon boules and wafers with high bulk lifetimes (τ bulk > 15 ms) to enable higher efficiency cells (>27 %) with fewer known degradation mechanisms than Czochralski (Cz)-grown wafers. These benefits reduce the levelized cost of electricity (LCOE) of PV-produced electricity. Here we show the results of our CFD and chemical modeling of the process to prove feasibility and economic viability.

14 SOLAR ENERGY↗
NASA NTRS1979

LSA silicon material task closed-cycle process development

The initial effort on feasibility of the closed cycle process was begun with the design of the two major items of untested equipment, the silicon tetrachloride by product converter and the rotary drum reactor for deposition of silicon from trichlorosilane. The design criteria of the initial laboratory equipment included consideration of the reaction chemistry, thermodynamics, and other technical factors. Design and construction of the laboratory equipment was completed. Preliminary silicon tetrachloride conversion experiments confirmed the expected high yield of trichlorosilane, up to 98 percent of theoretical conversion. A preliminary solar-grade polysilicon cost estimate, including capital costs considered extremely conservative, of $6.91/kg supports the potential of this approach to achieve the cost goal. The closed cycle process appears to have a very likely potential to achieve LSA goals.

Roques, R. A.↗
NASA NTRS1979

Evaluation of Selected Chemical Processes for Production of Low-cost Silicon, Phase 3

The construction of the 50 MT Si/year experimental process system development unit was deferred until FY 1980, and the fluidized bed, zinc vaporizer, by-product condenser, and electrolytic cell were combined with auxiliary units, capable of supporting 8-hour batchwise operation, to form the process development unit (PDU), which is scheduled to be in operation by October 1, 1979. The design of the PDU and objectives of its operation are discussed. Experimental program support activities described relate to: (1) a wetted-wall condensor; (2) fluidized-bed modeling; (3) zinc chloride electrolysis; and (4) zinc vaporizer.

Blocher, J. M., Jr.↗