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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A facile halide and cation exchange reaction to co-dope d- and f-block elements in cesium lead halide nanoparticles at room temperature.
A solid-phase epitaxy has been developed for the growth of CoSi2 films on Si (111) with no observable pinholes (1000/sq cm detection limit). The technique utilizes room-temperature codeposition of Co and Si in stoichiometric ratio, followed by the deposition of an amorphous Si capping layer and subsequent in situ annealing at 550-600 C. CoSi2 films grown without the Si cap are found to have pinhole densities of (1-10) x 10 to the 7th/sq cm when annealed at similar temperatures. A CF4 plasma-etching technique was used to increase the visibility of the pinholes in the silicide layer.
Quasi-2D tin iodide perovskites (TIPs) are promising lead-free alternatives for optoelectronic applications, but achieving stable lasing remains challenging due to their limited environmental stability. Here, we report air-stable, room-temperature lasing from quasi-2D TIP microcrystals as small as 4 μm. Incorporation of the organic spacer 5IPA3 significantly enhanced the stability of these materials compared with previously reported TIPs. Lasing was observed from both dielectric (n = 4) and plasmonic (n = 3 and n = 4) TIP microlasers. Under picosecond pumping, lasing was sustained for over 108 pump pulses in ambient conditions. These results represent a significant step toward practical photonic applications of tin-based perovskites.
The nitrogen-vacancy (NV) centre in diamond is a premier solid-state defect for quantum information processing and metrology. An integrated diamond quantum device harnesses the collective properties of multiple NV centres, enabling room-temperature quantum computing and sensing. While large-scale devices are poised to fill an important gap in the burgeoning quantum technology landscape, their practical realisation has not been achieved using current top-down fabrication techniques such as ion implantation. Consequently, this necessitates the development of a bottom-up fabrication technique, which is scalable, deterministic, and possesses atomic-scale precision. Informed by existing methods for fabricating phosphorous defect qubits in silicon, we envision a hydrogen depassivation lithography technique for atomically-precise manufacturing of nitrogen-vacancy centres in diamond. This perspective article outlines a viable multi-step procedure for realising scalable fabrication of diamond quantum devices and identifies the key challenges in its development.
Surface passivation of crystalline Si (c-Si) to reduce recombination rate is crucial to obtain high-efficiency c-Si solar cells. A fast passivation technique that can be performed at room temperature is needed when studying the degradation behaviors using various characterization methods to not destroy the degraded states. In this contribution, we explore Nafion via dip coating on n-type Cz wafers. We show that both the Nafion concentration and the conditions of surface and edge affect the passivation quality, and we achieve excellent passivation quality of iVoc of 716 mV, with a saturation current density (J0) of 7 fA/cm2. Additionally, electron paramagnetic resonance (EPR) shows Nafion can be used under cryogenic temperature and reveals the reduction of Si dangling bond after Nafion treatment.
Dense and uniform Li 6.25 Al 0.25 La 3 Zr 2 O 12 (Al-doped LLZO) solid-electrolyte film of ~24 µm thickness is successfully fabricated by room temperature aerosol deposition (AD) method. The process optimization study revealed that careful control of particle size and morphology is one of critical determinants in the development of a compact AD membrane. Notably, our method facilitated an impressive ionic conductivity of approximately 10 –5 S cm –1 , bypassing the necessity for post-annealing processes, a milestone in itself. However, it is hypothesized that the attained conductivity is somewhat restrained by factors such as smaller grain size and potential surface degradation due to moisture exposure during fabrication, indicating avenues for further research. Looking forward, detailed investigations into the film's microstructure and its impact on transport properties will be a focal point, alongside potential enhancements through post-annealing and particle coating strategies. Finally, this research hints at a promising trajectory for the development of high-efficiency solid-state battery technology.
Understanding the pressure-dependent dielectric properties of water is crucial for a wide range of scientific and practical applications. In this study, we employ a deep neural network trained on density functional theory data to investigate the dielectric properties of liquid water at room temperature across a pressure range of 0.1–1000 MPa. We observe a nonlinear increase in the static dielectric constant ɛ 0 with increasing pressure, a trend that is qualitatively consistent with experimental observations. This increase in ɛ 0 is primarily attributed to the increase in water density under compression, which enhances collective dipole fluctuations within the hydrogen-bonding network as well as the dielectric response. Despite the increase in ɛ 0 , our results reveal a decrease in the Kirkwood correlation factor G K with increasing pressure. Furthermore, this decrease in G K is attributed to pressure-induced structural distortions in the hydrogen-bonding network, which weaken dipolar correlations by disrupting the ideal tetrahedral arrangement of water molecules.
The present disclosure relates to fluoride ion batteries and structures of metal based electrode materials for various fluoride ion batteries. The structures of the metal based electrode materials comprise one or more shells or interfaces, enabling the electrodes to operate at room temperature with a liquid electrolyte.
Electrocatalytic activation of alkanes can further decarbonize chemical manufacturing by leveraging affordable renewable electricity and readily available shale gas reserves in the United States. Earlier works have identified the unique role of Pt in adsorbing and activating alkanes, like propane, at room temperature in acidic, aqueous electrolytes, revealing spontaneous formation of deeply dehydrogenated propane-derived surface species with an intact C 3 - backbone. Although an adsorption mechanism was hypothesized, it has not been explicitly investigated to date, preventing the quantification of kinetic rate parameters. A robust methodology to investigate and benchmark propane adsorption kinetics on Pt is critical for the rational design of electrocatalysts that exhibit higher selectivity toward desired partially oxidized products. Herein, we analyze an oxidative current transience that appears during the adsorption of propane on Pt in aqueous electrochemical conditions and develop a methodology that elucidates the adsorption mechanism and enables quantification of rate parameters such as order dependences and apparent activation barriers. This method yields an expected first-order dependence with respect to propane concentration at low coverage and reveals a second-order dependence with respect to the concentration of surface active sites. Additionally, the apparent activation barrier for propane adsorption was calculated using an Arrhenius analysis of the current transience under temperature control. The experimentally measured activation barrier of 35 kJ mol –1 is in excellent agreement with the theoretical barrier calculated by density functional theory (DFT). The kinetic analysis was extended, via the use of transition state theory, to extract entropy and enthalpy of activation, yielding consistent results with the proposed two-step adsorption mechanism and DFT calculations. These results demonstrate reliable quantification of kinetic parameters for electrocatalytic activation of C–H bonds in alkanes that can be employed for rational catalyst development for a versatile range of electrocatalytic conditions.
This paper describes new alloy heterojunction detectors of In(.8)Ga(.2)As/InAs(.6)P(.4) which can detect light between 1.7 and 2.6 microns with 50 percent quantum efficiency and 5 mA/sq cm dark current (-1 V) density at room temperature. Wafer probe data showed that over 50 good contiguous 100 micron diameter devices (spaced 400 microns) could be made on a 25 x 30 mm wafer with overall yield above 93 percent. The ability to operate under -1 V reverse bias makes these devices ideally compatible with existing commercial multiplexer readouts.
It has been found that very small vapor-deposited catalytically active metal particles in the 1-2 nm size range on metal oxide substrates can undergo significant changes when they are exposed to gases such as oxygen or air, or even when allowed to 'anneal' at room temperature (RT) under vacuum conditions. The present investigation is concerned with continued in-situ gas exposures of as-deposited, 1 to 2 nm size palladium particles on MgO to air, oxygen, nitrogen, hydrogen, CO, and water vapor at RT. It is found that the low-pressure exposure to various gases at RT can significantly affect small palladium particles supported on MgO surfaces. Exposure to oxygen for 3 min at 0.0002 m bar produces a considerable amount of coalescence, flattening of the particles, and some distinct crystallographic particle shapes.
Equations are presented for the attenuation characteristics of several types of mufflers. Experimental curves of attenuation plotted against frequency are presented for 77 different mufflers and the results are compared with theory. The experiments were made at room temperature without flow and the sound source was a loud-speaker. A method is given for including the tail pipe in the calculations. The application of the theory to the design of engine-exhaust mufflers is discussed, and charts have been included for the assistance of the designer.
We report the first-time measurement of the electron-hole pair (ehp) creation energy (W ehp ) in novel Cd 0.9 Zn 0.1 Te 0.98 Se 0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large-volume room-temperature gamma-ray detectors due to its excellent compositional homogeneity with highly reduced defects, high-Z (atomic number) constituents, wide bandgap (1.6 eV), and superior charge transport properties. Despite a great deal of study of the material and device properties since its inception, the W ehp in CZTS has not been measured experimentally. Accurate determination of W ehp is essential for calibration of the spectrometer and other theoretical calculations. In this study we have used an absolute calibration approach, which is based on an iterative approach that yields the Wehp as the best-fit parameter. Using a 241 Am alpha emitting radioisotope and a planar CZTS detector, the Wehp in CZTS was calculated to be 4.47 eV. The obtained value has been validated by accurately predicting the peak energy for gamma rays emitted by a 137 Cs source and read by a CZTS detector with different dimensions. The dependences of the calculated W ehp value on the detector dimensions, type of interaction, and effect of charge trapping are also discussed.
We prepare and analyze Rydberg states with orbital quantum numbers ℓ ≤ 6 using three-optical-photon electromagnetically induced transparency (EIT) and radio frequency (rf) dressing, and employ the high- ℓ states in electric-field sensing. Rubidium-85 atoms in a room-temperature vapor cell are first promoted into the 25 F 5 / 2 state via Rydberg-EIT with three infrared laser beams. Two rf dressing fields then (near-)resonantly couple the 25 F , 25 H ( ℓ = 5 ) , and 25 I ( ℓ = 6 ) Rydberg states. The dependence of the rf-dressed Rydberg-state level structure on rf powers, rf and laser frequencies is characterized using EIT. Furthermore, we discuss the principles of dc-electric-field sensing using high- ℓ Rydberg states and experimentally demonstrate the method using test electric fields of ≲ 50 V/m induced via photo-illumination of the vapor-cell wall. We measure the highly nonlinear dependence of the dc-electric-field strength on the power of the photo-illumination laser. Numerical calculations, which reproduce our experimental observations well, elucidate the underlying physics. Our paper is relevant to high-precision spectroscopy of high- ℓ Rydberg states, Rydberg-atom-based electric-field sensing, and plasma electric-field diagnostics. Published by the American Physical Society 2024
A discussion of the limits of energy resolution in different energy ranges is given. The energy resolution of a spectrometer is analyzed in terms of the parameters characterizing the crystal, the detector, and the amplification electronics. A high-resolution room-temperature HgI2 spectrometry system was used to measure low-energy X-ray fluorescence spectra. For the MgK-alpha X-ray line the measured resolution was 245 eV (fwhm); the electronic noise linewidth of the system was 225 eV. Alpha-particles were used to excite X-ray fluorescence from low-Z elements separately or in combination. The shape of the photopeaks in the spectra is discussed.
Anisotropic friction, deformation, and fracture studies were conducted with /0001/, /10(-1)0/, and /11(-2)0/ silicon carbide surfaces in sliding contact with diamond. The experiments were conducted with loads of 0.1, 0.2, and 0.3 N at a sliding velocity of 3 mm/min in mineral oil or in dry argon at room temperature. The 1010 direction on the basal /0001/ plane exhibits the lowest coefficient of friction and the greatest resistance to abrasion for silicon carbide. Anisotropic friction and deformation of the /0001/, /10(-1)0/, and /11(-2)0/ silicon carbide surfaces are primarily controlled by the slip system /10(-1)0/ 11(-2)0. The anisotropic fracture during sliding on the basal plane is due to surface cracking along /10(-1)0/ and subsurface cracking along /0001/. The fracture during sliding on the /11(-2)0/ or /10(-1)0/ surfaces is due to surface cracking along /0001/ and /11(-2)0/ or /10(-1)-1 and to subsurface cracking along /10(-1)0/.
Q-switched, 400-ns pulses with output energy of 700 mJ at 2-microns, representing an optical-to-optical efficiency of 2%, was achieved from five diode-pumped Ho:Tm:YLF laser amplifiers at room-temperature.
In BaTiO 3 single crystals, we observed a strain-driven phase transition from the tetragonal phase to the tetragonal-orthorhombic phase boundary which can be introduced by slow cycling compressions (a loading of up to 0.5 GPa, strain rate of 10 -4 s -1 , and 100 cycles) at room temperature. Different from the well-known tetragonal to cubic phase transition under stress (~2 GPa), it only takes place locally around bent 90° domain walls. The inhomogeneous local stress and electrical fields as well as the mobile point defect pinning effect contribute to the phase re-entrance. Through comparison experiments by in situ synchrotron x-ray diffraction, Raman scattering, and (scanning) transmission electron microscopy, we explored the phase transition mechanism. Based on that, we developed a mechanical method to obtain well-stabilized high-density thermotropic phase boundary structures (with tetragonal, orthorhombic, and bridging monoclinic phases) in BaTiO 3 for potential applications.