Application of static metallic adhesion data to friction
Static metallic adhesion model for sliding friction, using contact resistance measurements
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Static metallic adhesion model for sliding friction, using contact resistance measurements
Metals and alloys thermal conductivity prediction using Lorentz ratio and electrical resistivity measurements
Single crystalline germanium has been grown for the first time in space aboard Skylab Mission No. 2. The crystal growth experiment, designed to characterize the influence of gravity-free solidification on microsegregation of a semiconductor material, contained three crystals. One was doped with Ga; the second with Sb; and the third with B. Portions of the germanium crystals were remelted and subsequently resolidified at 5 microns per second under controlled conditions by the gradient freeze technique. Detailed spreading resistance measurements made on the Ga doped Ge crystals indicate that microsegregation in space is reduced by two to five-fold in the bulk and eight-fold near the surface, while macrosegregation in space is reduced by six-fold in the bulk. The effective segregation coefficient for Ga in Ge was analyzed extensively and was found to be larger for space solidification. This has the implication that the solute boundary layer at the growth interface in space is correspondingly thinner. The solidification interface is significantly smoother and is found to be initially convex toward the melt in space. A convective mixing model has been advanced to explain the absence of gravity on convective mixing and solute segregation during solidification.
A simple inviscid interaction model has been developed which uses thin airfoil theory to account for pressure forces exerted at the interface between the orifice and grazing flow together with a one-dimensional discharge coefficient concept. The effect of grazing flow boundary layer thickness was also included in the model. Resistance measurements for a wide range of grazing flow speeds and orifice flow rates collapse into a single curve when plotted in terms of effective discharge coefficient versus orifice-to-grazing velocity ratio. The correlation curves for inflow and outflow are different. Data for clustered orifices collapse in the same way as the single orifice. The effect of boundary layer thickness is compared with model predictions. The effect of orifice length-diameter ratio is shown to be significant for inflow but negligible for outflow.
A class of infrared detectors is proposed and experimental results are presented for a prototype device. The material used is LaF3, an ionic conductor with a capacitance that varies exponentially with temperature. The detectivity of a prototype detector is estimated from measured signal voltages and incident power, and a Johnson noise voltage calculated from the measured resistance. For the parameters characterizing this device the estimated detectivity is consistent with a theoretical prediction. The theory further predicts an optimum detectivity for much thinner devices than the prototypes.
Thin and thick film test specimens were utilized to study the effects of silicone and epoxy hybrid microcircuit coatings on 0.025 mm diameter aluminum and gold ultrasonic bonds, and 0.051 diameter gold pulsed-thermocompression bonds. Chip-to-substrate and substrate-to-substrate geometries were included. Because sealed packages were utilized, a test pattern design was incorporated that allowed the determination of bond failures by making resistance measurements external to the package after the various environmental tests. All wire bonds were non-destructively pull tested prior to sealing. Tests included the PIN test, temperature cycling, and high temperature storage.
Steady state diagnostic testing of an isolated orifice has shown the nature of the interaction between grazing and orifice flow causing the large increase in orifice resistance for both inflow and outflow. A simple inviscid interaction model is developed which uses thin aerofoil theory to account for pressure forces exerted at the interface between the orifice and grazing flow together with a one-dimensional discharge coefficient concept. The effect of grazing flow boundary layer thickness is also included in the model. Resistance measurements for each orifice tested, over a wide range of grazing flow speeds and flow rates, collapse into a single curve when plotted in terms of effective discharge coefficient against orifice to grazing velocity ratio. The correlation curves for inflow and outflow are different. Data for clustered orifices collapse in the same way as those for the single orifice. The effect of boundary layer thickness is compared with model predictions.
A class of infrared detectors is proposed, and experimental results are presented for a prototype device. The material used is LaF3, an ionic conductor with a capacitance that varies exponentially with temperature. The detectivity of a prototype detector is estimated from measured signal voltages and incident power, and a Johnson noise voltage is calculated from the measured resistance. At a modulation frequency of 20 Hz, the estimated detectivity is about 2 million cm/sq root Hz/W. For the parameters characterizing this device, the estimated detectivity is consistent with a theoretical prediction. The theory further predicts an optimum detectivity of about 1 billion cm/sq root Hz/W for much thinner devices than the prototypes.
Microscopic aspects of interfacial reactions are discussed, such as interdiffusion, formation of intermetallic phases, generation and annihilation of lattice defects, effect of temperature, grain size, etc., which normally occur in diffusion bonding processes. Relationships between properties and microstructure in thin film couples are examined utilizing a unique combination of contact resistance measurements and characterization by transmission electron microscopy.
Technology was developed for production of doped-germanium detectors which have optimized performance in the 30- to 120-micrometer wavelength range and are capable of achieving the objectives of the Infrared Astronomy Satellite space mission. The work of this phase was divided into the following major tasks: (1) growth of Ge:Ga crystals from high-purity starting material with Ga concentrations different from that previously produced, and development of a zone leveling method to produce a uniform Ga doping concentration; (2) growth of uncompensated Ge:Be crystals from high-purity starting material with a range of Be concentrations between 10 to the 14th power and 10 to the 16th power atoms/cubic cm; (3) evaluation of crystals by means of Hall effect and resistance measurements as a function of temperature; (4) fabrication and test of detectors made from both Ge:Be and Ge:Ga crystals to determine the relative performance between different crystals. Correlation of detector test data with material evaluation data and analysis of how to further optimize detector performance.
Various factors affecting precision of trim and resistor stability were considered. The influence of machine operating parameters on resistor performance was examined and quantified through statistically designed experiments for a Q switched YAG laser system. Laser kerf quality was studied by scanning electron microscopy and related to kerf isolation resistance measurements. A relatively simple production oriented, quality control test is proposed for rapid determination of kerf electrical stability. In addition, the effect of cut design and extent of trim on precision and stability were discussed.
The development of doped-germanium detectors which have optimized performance in the 30- to 120-mu m wavelength range and are capable of achieving the objectives of the infrared astronomical satellite (IRAS) space mission is discussed. Topics covered include the growth and evaluation of Ge:Ga and Ge:Be crystals, procedures for the fabrication and testing of detectors, irradiance calculations, detector responsivity, and resistance measurements through MOSFET. Test data are presented in graphs and charts.
All films were deposited by resistive heated evaporation in an oil diffusion pumped vacuum system (ultimate approx. equal to 0.0000001 torr). The growth from nuclei to a continuous film is highly dependent on the deposition parameters, evaporation rate as well as substrate material and substrate temperature. The growth stages of a film and the dependence of grain size on various deposition and annealing parameters are shown. Resistivity measurements were taken on thin films to observe size effects.
Resistance measurements showing that vitreous graphite remains almost wholly intact even after 1 hour of contact with silicon melt indicates that vitreous carbon may be superior to rubbed-on graphite as interface between ceramic substrate and silicon layer of solar cell.
Changes were studied which enable polycarbonate metallized film capacitors to withstand 500 thermal shock cycles while maintaining electrical characteristic integrity without becoming intermittent, and without losing hermeticity. The task was for metallized polycarbonate film capacitors designed to meet MIL-C-39022/9 and MIL-C-83421/1. The capacitor design improvements implemented were the insertion of a rubber washer between spray cap and end seal and the utilization of a flexible lead assembly. One hundred fifty capacitors incorporating the design improvements were manufactured and subsequently underwent 500 thermal shock cycles. One hundred forty nine capacitors survived the test. Failure analysis revealed that the lone failure was due to a poor solder joint, initially detected in pre-screening tests as having poor dissipation factor and equivalent series resistance measurement readings.
The three major effects that degrade external responsivity of silicon from the 1/lambda theoretical curve for a quantum detector are: surface reflectance, surface recombination, and junction depth. Since the p-n junction must be very shallow, problems relating to surface are further enhanced. MOS type of processing is necessary. HCl oxides and numerous acid clean-ups are utilized in order to obtain a contamination free surface with low Qss levels. Stringent process controls such as CV shifts, spreading resistance measurements, thickness monitoring etc., are used to analyze the surface contaminations, surface mobile charges, surface concentrations, junction depth, oxide thickness etc. Low surface concentrations of 10 to the 18th atoms/cu cm are achieved by low temperature boron nitride depositions. Shallow junction depths of the order of a few tenths of a micron are achieved by low temperature controlled diffusions. In order to improve breakdown characteristics of these shallow junction devices, field plate and deep diffused p(+) ring geometries are used.
High-pressure transition in crystalline orthorhombic sulfur has been investigated, using a diamond indentor pressed against a diamond flat to produce pressures up to 300 kbar and an opposed-anvil apparatus to obtain lower pressures. The first indication of sulfur transition using the indentor technique was seen when resistance measured 3 times 10 to the 12th ohm. Transition was found to be sluggish and highly time-dependent.
Metal screened electrodes were investigated with base metal pastes and silver systems being focused upon. Contact resistance measurements were refined. A facility allowing fixing in hydrogen and other atmospheres was acquired. Several experiments were made applying screenable pastes to solar cells. Doping investigations emphasized eutectic alloys reduced to powders. Metal systems were reviewed and base metal experiments were done with nickel and copper using lead and tin as the frit metals. Severe adhesion problems were experienced with hydrogen atmospheres in all metal systems. A two step firing schedule was devised. Aluminum-silicon and aluminum-germanium eutectic doping additions to copper pastes were tried on 2 1/4 in diameter solar cell back contacts, both with good results.