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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The objective was to search for and demonstrate approaches and concepts for fast wafer probe tests of mechanisms affecting the reliability of MOS technology and, based on these, develop and optimize test chips and test procedures. Progress is reported on four important wafer-level reliability problems: gate-oxide radiation hardness; hot-electron effects; time-dependence dielectric breakdown; and electromigration.
NASA involvement in photovoltaic energy conversion research development and applications spans over two decades of continuous progress. Solar cell research and development programs conducted by the Lewis Research Center's Photovoltaic Branch have produced a sound technology base not only for the space program, but for terrestrial applications as well. The fundamental goals which have guided the NASA photovoltaic program are to improve the efficiency and lifetime, and to reduce the mass and cost of photovoltaic energy conversion devices and arrays for use in space. The major efforts in the current Lewis program are on high efficiency, single crystal GaAs planar and concentrator cells, radiation hard InP cells, and superlattice solar cells. A brief historical perspective of accomplishments in high efficiency space solar cells will be given, and current work in all of the above categories will be described. The applicability of space cell research and technology to terrestrial photovoltaics will be discussed.
High-performance infrared hybrid focal plane arrays using 10- x 50-element Si:As blocked-impurity-band (BIB) detectors (cutoff wavelength = 28 microns) and matching switched MOSFET multiplexers have been developed and characterized for space astronomy. Use of impurity-band-conduction technology provides detectors which are nuclear-radiation-hard and free of the many anomalies associated with conventional silicon photoconductive detectors. Emphasis in the present work is on recent advances in detector material quality which have led to significantly improved detector and hybrid characteristics. Results demonstrating increased quantum efficiency (particularly at short-wavelength infrared), obtained by varying the BIB detector properties (infrared active layer thickness and arsenic doping profile), are summarized. Measured read noise and dark current for different temperatures are reported. The hybrid array performance achieved demonstrates that BIB detectors are well suited for use in astronomical instrumentation.
X ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and scanning electron microscopy (SEM) were used to study structural and chemical inhomogeneities in several electronic materials and device structures of relevance to radiation hard electronics. The systems studied include metal nitride oxide semiconductor (MNOS) structures, silicon oxynitride (SiO(x)N(y)) formed by the thermal nitridation of SiO2, and semiconductor on insulator (SOI) structures. Studies of MNOS structures suggest that the effect of H2 annealing is to make the Si3N4/SiO2 interface less abrupt by causing interdiffusion of silanol and silamine groups with subsequent oxynitride formation. Another effect of the annealing appears to be to relieve the strain at the SiO2/Si interface.
Results are reported from an extensive investigation into pattern-sensitive soft errors (read disturb errors) in the TCC244 CMOS static RAM chip. The TCC244, also known as the SA2838, is a radiation-hard single-event-upset-resistant 4 x 256 memory chip. This device is being used by the Jet Propulsion Laboratory in the Galileo and Magellan spacecraft, which will have encounters with Jupiter and Venus, respectively. Two aspects of the part's design are shown to result in the occurrence of read disturb errors: the transparence of the signal path from the address pins to the array of cells, and the large resistance in the Vdd and Vss lines of the cells in the center of the array. Probe measurements taken during a read disturb failure illustrate how address skews and the data pattern in the chip combine to produce a bit flip. A capacitive charge pump formed by the individual cell capacitances and the resistance in the supply lines pumps down both the internal cell voltage and the local supply voltage until a bit flip occurs.
Researchers describe the most important radiation response issues for infrared detectors. In general, the two key degradation mechanisms in infrared detectors are the noise produced by exposure to a flux of ionizing particles (e.g.; trapped electronics and protons, debris gammas and electrons, radioactive decay of neutron-activated materials) and permanent damage produced by exposure to total dose. Total-dose-induced damage is most often the result of charge trapping in insulators or at interfaces. Exposure to short pulses of ionization (e.g.; prompt x rays or gammas, delayed gammas) will cause detector upset. However, this upset is not important to a sensor unless the recovery time is too long. A few detector technologies are vulnerable to neutron-induced displacement damage, but fortunately most are not. Researchers compare the responses of the new technologies with those of the mainstream technologies of PV HgCdTe and IBC Si:As. One important reason for this comparison is to note where some of the newer technologies have the potential to provide significantly improved radiation hardness compared with that of the mainstream technologies, and thus to provide greater motivation for the pursuit of these technologies.
There has been a lot of interest in III-V long wavelength detectors in the lambda = 8 to 12 micron spectral range as alternatives to HgCdTe. Recently high performance quantum well infrared photodetectors (QWIP) have been demonstrated. They have a responsivity of R = 1.2 A/W, and a detectivity D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at 68 K for a QWIP with a cutoff wavelength of lambda sub c = 10.7 micron and a R = 1.0 A/W, and D(exp asterisk) sub lambda = 2 times 10(exp 10) cm Hz(exp 1/2)/W at T = 77 K for lambda sub c = 8.4 micron. These detectors consist of 50 periods of molecular beam epitaxy (MBE) grown layers doped n = 1 times 10(exp 18)cm(exp -3) having GaAs quantum well widths of 40 A and barrier widths of 500 A of Al sub x Ga sub 1-x As. Due to the well-established GaAs growth and processing techniques, these detectors have the potential for large, highly uniform, low cost, high performance arrays as well as monolithic integration with GaAs electronics, high speed and radiation hardness. Latest results on the transport physics, device performance and arrays are discussed.
The VIPER project has so far produced a formal specification of a 32 bit RISC microprocessor, an implementation of that chip in radiation-hard SOS technology, a partial proof of correctness of the implementation which is still being extended, and a large body of supporting software. The time has now come to consider what has been achieved and what directions should be pursued in the future. The most obvious lesson from the VIPER project was the time and effort needed to use formal methods properly. Most of the problems arose in the interfaces between different formalisms, e.g., between the (informal) English description and the HOL spec, between the block-level spec in HOL and the equivalent in ELLA needed by the low-level CAD tools. These interfaces need to be made rigorous or (better) eliminated. VIPER 1A (the latest chip) is designed to operate in pairs, to give protection against breakdowns in service as well as design faults. We have come to regard redundancy and formal design methods as complementary, the one to guard against normal component failures and the other to provide insurance against the risk of the common-cause failures which bedevil reliability predictions. Any future VIPER chips will certainly need improved performance to keep up with increasingly demanding applications. We have a prototype design (not yet specified formally) which includes 32 and 64 bit multiply, instruction pre-fetch, more efficient interface timing, and a new instruction to allow a quick response to peripheral requests. Work is under way to specify this device in MIRANDA, and then to refine the spec into a block-level design by top-down transformations. When the refinement is complete, a relatively simple proof checker should be able to demonstrate its correctness. This paper is presented in viewgraph form.
Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradation after radiation are available, particularly for cells with efficiencies exceeding 20 percent (one-sun, AMO). Often the cell performance is optimized for the highest beginning-of-life (BOL) efficiency, despite the unknown effect of such design on end-of-life (EOL) efficiencies. The results of a study of the radiation effects on p-n GaAs cells are presented. The EOL efficiency of GaAs space cell can be increased by adjusting materials growth parameters, resulting in a demonstration of 16 percent EOL efficiency at one-sun, AMO. Reducing base doping levels to below 3 x 10(exp 17)/cu m and decreasing emitter thickness to 0.3 to 0.5 micron for p-n cells led to significant improvements in radiation hardness as measured by EOL/BOL efficiency ratios for irradiation of 10(exp -15)/sq cm electrons at 1 MeV. BOL efficiency was not affected by changes in emitter thickness but did improve with lower base doping.
The Rubidium Atomic Frequency Standards (RAFS) were provided for the GPS Block IIR NAVSTAR satellites. These satellites will replenish and upgrade the space segment of the Global Positioning System in the mid 1990s. The GPS RAFS Rb clocks are the latest generation of the high-performance rubidium frequency standards. They offer an aging rate in the low pp 10(exp 14)/day range and a drift-corrected 1-day stability in the low pp 10(exp 14) range. The Block IIR version of these devices will have improved performance, higher reliability, smaller size, and greater radiation hardness. The GPS Block IIR atomic clocks have a natural frequency configuration whereby they output a frequency of about 13.4 MHz that is a submultiple of the atomic resonance of Rb (or Cs). The RAFS operates at a low, fixed C-field for increased stability. The GPS Block IIR RAFS design, including the changes and improvements made, and the test results obtained are described.
A several kilowatt power level, fast-variable linear resistor was synthesized by using analog components to control the conductance of power MOSFETs. Risetimes observed have been as short as 500 ns with respect to the control signal and 1 to 2 microseconds with respect to the power source voltage. A variant configuration of this load that dissipates a constant power set by a control signal is indicated. Replacement of the MOSFETs by static induction transistors (SITs) to increase power handling, speed and radiation hardness is discussed.
Large-area photovoltaic solar cells based on direct current magnetron sputter deposition of indium tin oxide (ITO) into single-crystal p-InP substrates demonstrated both the radiation hardness and high performance necessary for extraterrestrial applications. A small-scale production project was initiated in which approximately 50 ITO/InP cells are being produced. The procedures used in this small-scale production of 4-sq cm ITO/InP cells are presented and discussed. The discussion includes analyses of performance range of all available production cells, and device performance data of the best cells thus far produced. Additionally, processing experience gained from the production of these cells is discussed, indicating other issues that may be encountered when large-scale productions are begun.
The mid-infrared spectra of carbon giant stars with hot companions are investigated in order to search for infrared emission bands from polycyclic aromatic hydrocarbons (PAH) in the envelopes of the C giants. A strong 8-micron emission band found in TU Tau = HD 38218 is attributed to the binary A star companion. It is argued that if the 8-micron feature in HD 38218 arises from PAHs, they seem to be important constituents of the C-giant shell, and they might be large compared with some interstellar PAHs. It is suggested that because no other IR spectra of C giants show clear PAH features, the greater flux of hard radiation in the binary HD 38218 seems likely to be responsible for the 8-micron feature and for its absence in many other C giants. Thus, PAHs could be present in the same amounts relative to SiC grains in the shells of similar single C giants, and the formation of carbonaceous grains could proceed through the formation of PAHs in C giant shells.
In order to meet the science objectives of the Astrotech 21 mission set the Ultraviolet (UV) and Visible Sensors Panel made a number of recommendations. In the UV wavelength range of 0.01 to 0.3 micro-m the focus is on the need for large format high quantum efficiency, radiation hard 'solar-blind' detectors. Options recommended for support include Si and non-Si charge coupled devices (CCDs) as well as photocathodes with improved microchannel plate readouts. For the 0.3 to 0.9 micro-m range, it was felt that Si CCDs offer the best option for high quantum efficiencies at these wavelengths. In the 0.9 to 2.5 micro-m the panel recommended support for the investigation of monolithic arrays. Finally, the panel noted that the implementation of very large arrays will require new data transmission, data recording, and data handling technologies.
A several-kilowatt power level, fast-variable linear resistor has been synthesized by using analog components to control the conductance of power MOSFETs. Risetimes observed have been as short as 500 ns with respect to the control signal and 1 to 2 microsec with respect to the power source voltage. A variant configuration of this load that dissipates a constant power set by a control signal is indicated. Replacement of the MOSFETs by static induction transistors to increase power handling, speed, and radiation hardness is discussed.
A high speed read MRAM memory element is configured from a sandwich of magnetizable, ferromagnetic film surrounding a magneto-resistive film which may be ferromagnetic or not. One outer ferromagnetic film has a higher coercive force than the other and therefore remains magnetized in one sense while the other may be switched in sense by a switching magnetic field. The magneto-resistive film is therefore sensitive to the amplitude of the resultant field between the outer ferromagnetic films and may be constructed of a high resistivity, high magneto-resistive material capable of higher sensing currents. This permits higher read voltages and therefore faster read operations. Alternate embodiments with perpendicular anisotropy, and in-plane anisotropy are shown, including an embodiment which uses high permeability guides to direct the closing flux path through the magneto-resistive material. High density, high speed, radiation hard, memory matrices may be constructed from these memory elements.
Infrared spectra of dusty galactic environments often contain emission features attributed to polycyclic aromatic hydrocarbons or PAHs, which can be considered to be very small grains or very large molecules. Although IR spectra of starburst galaxies almost always show these emission features, similar spectra of active galaxies are usually featureless. Even in those active galaxies that do exhibit PAH emission, the PAHs still appear to be eradicated from the nuclear region. This dichotomy suggests that PAHs are destroyed by the intense hard radiation field from an AGN. Laboratory experiments show that certain PAHs are, in fact, so effectively destroyed by individual EUV and X-ray photons that they cannot survive even at kiloparsec distances from active nuclei. Regions within active galaxies that do show PAH emission must therefore be shielded from the central X-ray source by a substantial column density of X-ray absorbing gas.
The 'Mongoose' ASIC microcontroller is a radiation-hard implementation of the R3000 microprocessor. This document describes the internals of the microcontroller in a level of detail necessary for someone implementing a software design.