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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Manipulating high-temperature superconductivity by oxygen doping in Bi2Sr2CaCu2O8+δ thin flakes

Abstract Harnessing the fascinating properties of correlated oxides requires precise control of their carrier density. Compared to other methods, oxygen doping provides an effective and more direct way to tune the electronic properties of correlated oxides. Although several approaches, such as thermal annealing and oxygen migration, have been introduced to change the oxygen content, a continuous and reversible solution that can be integrated with modern electronic technology is much in demand. Here, we report a novel ionic field-effect transistor using solid Gd-doped CeO2 as the gate dielectric, which shows a remarkable carrier-density-tuning ability via electric-field-controlled oxygen concentration at room temperature. In Bi2Sr2CaCu2O8+δ (Bi-2212) thin flakes, we achieve a reversible superconductor–insulator transition by driving oxygen ions in and out of the samples with electric fields, and map out the phase diagram all the way from the insulating regime to the over-doped superconducting regime by continuously changing the oxygen doping level. Scaling analysis indicates that the reversible superconductor–insulator transition for the Bi-2212 thin flakes follows the theoretical description of a two-dimensional quantum phase transition. Our work provides a route for realizing electric-field control of phase transition in correlated oxides. Moreover, the configuration of this type of transistor makes heterostructure/interface engineering possible, thus having the potential to serve as the next-generation all-solid-state field-effect transistor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Unitary Subharmonic Response and Floquet Majorana Modes

Detection and manipulation of excitations with non-Abelian statistics, such as Majorana fermions, are essential for creating topological quantum computers. To this end, we show the connection between the existence of such localized particles and the phenomenon of unitary subharmonic response (SR) in periodically driven systems. In particular, starting from highly nonequilibrium initial states, the unpaired Majorana modes exhibit spin oscillations with twice the driving period, are localized, and can have exponentially long lifetimes in clean systems. While the lifetime of SR is limited in translationally invariant systems, we show in this work that disorder can be engineered to stabilize the subharmonic response of Majorana modes. A viable observation of this phenomenon can be achieved using modern multiqubit hardware, such as superconducting circuits and cold atomic systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.

42 ENGINEERING↗
DOE OSTI2023

Disordered hyperuniform solid state materials

Disordered hyperuniform (DHU) states are recently discovered exotic states of condensed matter. DHU systems are similar to liquids or glasses in that they are statistically isotropic and lack conventional long-range translational and orientational order. On the other hand, they completely suppress normalized infinite-wavelength density fluctuations like crystals and, in this sense, possess a hidden long-range correlation. Very recently, there have been several exciting discoveries of disordered hyperuniformity in solid-state materials, including amorphous carbon nanotubes, amorphous 2D silica, amorphous graphene, defected transition metal dichalcogenides, defected pentagonal 2D materials, and medium/high-entropy alloys. It has been found that the DHU states of these materials often possess a significantly lower energy than other disorder models and can lead to unique electronic and thermal transport properties, which results from mechanisms distinct from those identified for their crystalline counterparts. For example, DHU states can enhance electronic transport in 2D amorphous silica; DHU medium/high-entropy alloys realize the Vegard's law and possess enhanced electronic bandgaps and thermal transport at low temperatures. These unique properties open up many promising potential device applications in optoelectronics and thermoelectrics. Here, we provide a focused review on these important new developments of hyperuniformity in solid-state materials, taking an applied and “materials” perspective, which complements the existing reviews on hyperuniformity in physical systems and photonic materials. As a result, future directions and outlook are also provided, with a focus on the design and discovery of DHU quantum materials for quantum information science and engineering.

2D materials↗
DOE OSTI2023

The complexity of NISQ

Abstract The recent proliferation of NISQ devices has made it imperative to understand their power. In this work, we define and study the complexity class , which encapsulates problems that can be efficiently solved by a classical computer with access to noisy quantum circuits. We establish super-polynomial separations in the complexity among classical computation, , and fault-tolerant quantum computation to solve some problems based on modifications of Simon’s problems. We then consider the power of for three well-studied problems. For unstructured search, we prove that cannot achieve a Grover-like quadratic speedup over classical computers. For the Bernstein-Vazirani problem, we show that only needs a number of queries logarithmic in what is required for classical computers. Finally, for a quantum state learning problem, we prove that is exponentially weaker than classical computers with access to noiseless constant-depth quantum circuits.

42 ENGINEERING↗
DOE OSTI2025

Time-resolved momentum imaging of UV photodynamics in structural isomers of iodopropane probed by site-selective XUV ionization

The photodynamics of 1- and 2-iodopropane (1 and 2-IP) were studied in a time-resolved scheme incorporating ultraviolet (UV) excitation and extreme ultraviolet (XUV) probing, which initiates photoionization selectively from the I 4d core orbital. UV absorption in the A-band of both isomers leads to prompt C–I bond fission, with significant disposal of internal energy into the propyl radical product. Site-selective ionization enables a range of charge transfer (CT) processes between the nascent highly charged iodine ions and neutral propyl radicals, dependent on the interfragment distance at the instant of ionization. Subtle differences in the dynamics of these CT processes between the two isomers are observed. In 1-IP, the kinetic energies of iodine ions produced by UV photodissociation and subsequent XUV multiple ionization increased notably over the first few hundred femtoseconds, which could be understood in terms of differing gradients along the photodissociation coordinates of the neutral and polycationic states involved in the pump and probe steps, respectively. Led by a recent report of HI elimination in UV photoexcited 2-IP [Todt et al., Phys. Chem. Chem. Phys., 22(46), 27338 (2020)], we also model the most likely signatures of this process in the present experiment, and can identify signal in the 2-IP data (that is absent or significantly weaker in the data from the unbranched 1-IP isomer) that is consistent with such a process occurring on ultrafast timescales.

Allum, Felix [Deutsches Elektronen-Synchrotron (DE↗
DOE OSTI2021

Unnuclear physics: Conformal symmetry in nuclear reactions

Significance Symmetry plays a key role in modern physics as a guiding principle for fundamental theories of nature. We use the nonrelativistic conformal symmetry to predict universal energy spectra of final states in reactions of quantum particles at vastly different length scales. Our work extends Georgi’s “unparticle” proposal to nonrelativistic spin-1/2 fermions in the unitary regime of strong interactions. These systems form so-called unparticles, which behave characteristically different from normal particles. They can be engineered with ultracold atoms and occur naturally in nuclear reactions with multiple neutrons—a situation we dub “unnuclear physics.” We present the general scenario of unnuclear physics, apply it to identify unnuclei in nuclear reactions, and highlight the opportunity to measure unnuclei at radioactive beam facilities.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Ultra-Low Disorder Graphene Quantum Dot-Based Spin Qubits for Cyber Secure Fossil Energy Infrastructure (Final Technical Report)

The overarching goal of the proposed project is to demonstrate the feasibility of creating ultralow local disorder graphene quantum dots (GQDs)-based high-speed, high-fidelity spin quantum bits (qubits) for extremely cyber-secure coal energy plants of the future. Despite their inherent benefits, the coherence times in the state-of-the-art GQD qubits are still low primarily due to the local disorder in GQD devices generated during lithographic fabrication of GQDs. Hence, the focus of this research is to prepare ultralow disorder GQDs (e.g., edge roughness ~0.5nm) and evaluate the low temperature (~mK) charge/spin transport characteristics of the engineered GQD qubit platform. To achieve minimal disorder in GQD qubits, we employ a novel approach that combines nanotomy (novel GQD fabrication technique developed by the PI) and scanning probe microscopy-atomic oxidation lithography (SPM-AOL).

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2020

Assessing three closed-loop learning algorithms by searching for high-quality quantum control pulses

Designing a high-quality control is crucial for reliable quantum computation. Among the existing approaches, closed-loop leaning control is an effective choice. Its efficiency depends on the learning algorithm employed, thus deserving algorithmic comparisons for its practical applications. Here we assess three representative learning algorithms, including GRadient Ascent Pulse Engineering (GRAPE), improved Nelder-Mead (NMplus), and Differential Evolution (DE), by searching for high-quality control pulses to prepare the Bell state. We first implement each algorithm experimentally in a nuclear magnetic resonance system and then conduct a numerical study considering the impact of some possible significant experimental uncertainties. The experiments report the successful preparation of the high-fidelity target state by the three algorithms, while NMplus converges fastest, and these results coincide with the numerical simulations when potential uncertainties are negligible. However, under certain significant uncertainties, these algorithms possess distinct performance with respect to their resulting precision and efficiency, and DE shows the best robustness. Finally, this study provides insight to aid in the practical application of different closed-loop learning algorithms in realistic physical scenarios.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Building a quantum computing architecture using 3D superconducting cavities

Quantum computers promise advantages over classical machines for solving certain complex problems, but building processors that truly deliver this advantage remains a central challenge, particularly due to limited coherence times. Three-dimensional superconducting radio-frequency (SRF) cavities offer an attractive platform due to their exceptionally long lifetimes. However, since these harmonic systems require nonlinear elements, such as transmons, for control, additional losses are often introduced. In this talk, I will present a multimode quantum system based on an elliptical SRF cavity hosting two cavity modes weakly coupled to an ancillary transmon circuit. This architecture is carefully engineered to preserve coherence while enabling efficient control. By optimizing the design to mitigate transmon-induced decoherence, we realize single-photon lifetimes of 20.6 ms and 15.6 ms in the two modes, with pure dephasing times exceeding 40 ms. Using sideband interactions and error-resilient protocols, such as measurement-based correction and post-selection, we demonstrate high-fidelity state control, including preparation of Fock states up to N=20 with fidelities above 95% (to our knowledge, the highest reported to date), as well as high-fidelity two-mode entanglement. These results highlight 3D SRF cavities as a robust foundation for qudit-based quantum information processing, harnessing the large Hilbert space of cavity modes. I will conclude by outlining strategies to further enhance coherence in both cavities and ancilla qubits, and discuss pathways toward scaling this architecture into a larger quantum computing platform.

Roy, Tanay [Fermilab]↗
DOE OSTI2020

First Principle Investigation of Electronic, Transport, and Bulk Properties of Zinc-Blende Magnesium Sulfide

We have studied electronic, structural, and transport properties of zinc-blende magnesium sulfide (zb-MgS). We employed a local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO) method. Our computational method is able to reach the ground state of a material, as dictated by the second theorem of density functional theory (DFT). Consequently, our findings have the physical content of DFT and agree with available, corresponding experimental ones. The calculated band gap of zb-MgS, a direct gap equal to 4.43 eV, obtained at the experimental lattice constant of 5.620 Å, completely agrees with the experimental band gap of 4.45 ± 0.2 eV. We also report total (DOS) and partial (pDOS) densities of states, electron and hole effective masses, the equilibrium lattice constant, and the bulk modulus. The calculated pDOS also agree with the experiment for the description of the states at the top and the bottom of the valence and conduction bands, respectively.

42 ENGINEERING↗
DOE OSTI2024

Progress on 3D SRF-based architecture for quantum computing

Superconducting radio frequency (SRF) cavities are excellent choices for storing and manipulating quantum information as quantum d-level systems (qudits) due to their exceptionally long lifetimes and large accessible Hilbert spaces. A common strategy to manipulate the states is to use a nonlinear element like a transmon. We present preliminary experimental results obtained with cavity displacements and selective number dependent arbitrary phase gates for universal qudit control, and its application towards High-energy physics (HEP) simulations and beyond. We discuss the advantages and challenges associated with building a 3D SRF architecture while maintaining long cavity lifetimes in the presence of lossy components. We show how the system coherence properties can be preserved by carefully engineering to minimize the participation of the long coherence modes in different loss channels, while ensuring sufficient quantum controllability. We further discuss the path towards building multi-qudit systems.

Romanenko, Alexander↗
DOE OSTI2025

Classical Benchmarks for Variational Quantum Eigensolver Simulations of the Hubbard Model

Simulating the Hubbard model is of great interest to a wide range of applications within condensed matter physics, however its solution on classical computers remains challenging in dimensions larger than one. The relative simplicity of this model, embodied by the sparseness of the Hamiltonian matrix, allows for its efficient implementation on quantum computers, and for its approximate solution using variational algorithms such as the variational quantum eigensolver. While these algorithms have been shown to reproduce the qualitative features of the Hubbard model, their quantitative accuracy in terms of producing true ground state energies and other properties, and the dependence of this accuracy on the system size and interaction strength, the choice of variational ansatz, and the degree of spatial inhomogeneity in the model, remains unknown. Here we present a rigorous classical benchmarking study, demonstrating the potential impact of these factors on the accuracy of the variational solution of the Hubbard model on quantum hardware, for systems with up to 32 qubits. We find that even when using the most accurate wavefunction ansätze for the Hubbard model, the error in its ground state energy and wavefunction plateaus for larger lattices, while stronger electronic correlations magnify this issue. Concurrently, spatially inhomogeneous parameters and the presence of off-site Coulomb interactions only have a small effect on the accuracy of the computed ground state energies. Our study highlights the capabilities and limitations of current approaches for solving the Hubbard model on quantum hardware, and we discuss potential future avenues of research.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Edge‐Driven Fringe‐Field Effects, Reduced Screening, and Bandgap Widening in Graphene Nanoribbons Enable Single‑Molecule Sensitivity

Graphene nanoribbons (GNRs) offer promising platforms for single‐molecule sensing due to their quasi‐1D channels and discrete electronic states, providing superior sensitivity toward molecular perturbations. While prior studies emphasize smoother edges as essential for optimal performance, the potential benefits of controlled edge roughness remain largely unexplored. Additionally, most investigations focus on GNR arrays, leaving critical edge‐ and width‐dependent factors, including fringe fields, bandgap widening, interactions between adsorbing molecules and GNR atoms, density of states (DOS) suppression, and electrostatic screening lengths, and their collective impact on sensitivity, poorly understood. Here, in this work, we fabricated field‐effect transistors using individual GNRs (widths: 200–20 nm) and characterized their response to molecular adsorption with perfluorooctanoic acid as the model analyte. Narrower ribbons displayed significantly enhanced sensitivity, yielding a coverage‐normalized response of 116 ± 10 mV per molecule in 20 nm‐wide GNRs (from calibrated ensemble Dirac‐point shifts). Experimental and theoretical analyses reveal that this heightened sensitivity arises from stronger fringe fields, width‐dependent quantum confinement effects, reduced DOS, and increased edge roughness that facilitates molecular anchoring, enhanced orbital overlap, and improved charge transfer efficiency. Our findings challenge the conventional assumption that smoother edges inherently enhance sensor performance, demonstrating that controlled edge disorder substantially boosts molecular sensitivity in GNR sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates

Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of laterally injected quantum wells via naturally occurring V-defects which promote hole injection through semipolar sidewalls and help to overcome the barriers to carrier injection that plague long wavelength nitride LEDs. In this article, we study V-defect engineered LEDs on (0001) patterned sapphire substrates (PSS) and GaN on (111) Si. V-defects were formed using a 40-period InGaN/GaN superlattice and we report a packaged external quantum efficiency (EQE) of 6.5% for standard 0.1 mm 2 . LEDs on PSS at 600 nm. We attribute the high EQE in these LEDs to lateral injection via V-defects.

Ewing, Jacob J.↗
DOE OSTI2024

Confinement of excited states in two-dimensional, in-plane, quantum heterostructures

Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe 2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe 2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe 2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe 2 . Finally, single-photon emission (g 2 (0) ~ 0.4) was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors.

42 ENGINEERING↗
DOE OSTI2024

Engineered MXene quantum dots for micro-supercapacitors with excellent capacitive behaviors

Micro-supercapacitors (MSCs) have drawn tremendous attention as promising candidates to power miniaturized portable/wearable electronics, but they still suffer from unsatisfactory electrochemical performance (e.g., insufficient energy density, mediocre rate capability), thus impeding their widespread applications. Here, a synergistic surface and structure engineering strategy achieved by downsizing to quantum dot scale, doping of heteroatoms, and introducing defects and functional groups is proposed to regulate the physicochemical properties of Ti 3 C 2 T x MXene. Encouragingly, the resulting MSCs based on defect-rich nitrogen-doped Ti 3 C 2 T x quantum dots (QDs) possess excellent electrochemical performance as demonstrated by large operating voltage (3.0 V in ionic liquid and 1.0 V in aqueous electrolyte), perfect rectangular CV shape even at 1000 V·s -1 , high volumetric capacitance of 33.1 F·cm -3 , and superior cycling stability after 10000 cycles. By employing experimental characterizations and density functional theory calculations, the remarkable performance of the MSCs is mainly due to the special chemical states as well as the unique surface and structural features of Ti 3 C 2 T x QDs, which offer abundant active sites, shorten ion diffusion pathways, promote ion/electron transports, and provide enhanced capacitance. Finally, this work provides a new strategy for the design of high-performance MSCs and a reference for the applications of MXene QDs in other energy-related fields.

42 ENGINEERING↗
DOE OSTI2025

Quantum Anomalies in Condensed Matter

Quantum materials provide a fertile ground in which to test and realize unusual phenomena such as quantum anomalies predicted by quantum field theory. There are three important symmetries that are broken when classical field theory is moved into the quantum regime, the scale anomaly, the axial (chiral) anomaly, and the parity anomaly. Several potential device applications may be realized by the discovery of quantum anomalies in condensed matter, enabled by the new physics they embody, including ultra‐sensitive dark matter detectors, far infrared optical modulators, micro‐bolometric detectors, low‐dissipation ballistic transporters, terahertz‐based qubits, terahertz polarization state controls, passive magnetic field sensors, stable topological superconductors that host Majorana fermions, and qubits topologically protected against decoherence. In this perspective article, the definition of these quantum anomalies is laid out, how little is known in the context of condensed matter, and how quantum anomalies are predicted to manifest as anomalous electronic, thermal, and magnetic behavior in experiments on topological quantum materials, including Weyl and Dirac semimetals. Furthermore, the importance that mechanical strain and defects will play in modifying signatures of quantum anomalies is discussed.

36 MATERIALS SCIENCE↗