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340 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Spin-orbital liquids and insulator-metal transitions on the pyrochlore lattice

The two orbital Hubbard model, with the electrons additionally coupled to a complex magnetic background, arises in the pyrochlore molybdates. The background involves local moments Hund's coupled to the electrons, driving double exchange ferromagnetism, and antiferromagnetic (AF) tendency arising from competing superexchange. The key scales include the Hubbard repulsion and the superexchange, both of which can be tuned in these materials. They control the phase transition from a ferromagnetic metal to a spin glass metal and then to a spin glass (Mott) insulator. We provide a comprehensive description of the ground state of this model using an unrestricted Hartree-Fock scheme implemented via a simulated annealing procedure and establish the metal-insulator transition line for varying Hubbard interaction and superexchange. The electrons see an effective disorder, due to orbital frustration, already in the ferromagnetic phase. The disorder is further enhanced by antiferromagnetic coupling and the resulting magnetic disorder. As a result, increasing AF coupling shifts the metal-insulator transition to lower Hubbard interaction and gives it an additional "Anderson" character. In conclusion, we provide detailed results on the magnetic and orbital correlations, the density of states, and the optical conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Thermal-Strain-Enabled Enhanced Emission from UV Laser-Induced Defect Levels near the Surface of Multilayer MoS 2

Monolayer two-dimensional (2D) materials have been intensively studied while research on multilayers is still in its infancy. Here, we induce defects inside bulk MoS 2 through thermal annealing and near the surface of multilayer MoS 2 using 375 nm laser irradiation, and investigate their photoluminescence (PL) and fluorescence lifetime imaging (FLIM). Enhanced emission is limited within a certain MoS 2 thickness. The observed enhanced emission is evidenced by a threshold behavior in super-linear PL intensity increase, strong polarization effects, and increased lifetime of defect peak. The laser power threshold for enhanced emission is much smaller in defects near the surface than that inside the bulk of multilayer MoS 2 . The mechanical strain from a wrinkle of the sample further lowers the laser power threshold for enhanced emission. By exciting with a 639 nm laser that is close to the fundamental gap between the conduction band minimum and the valence band maximum, the lifetime of defect enhanced emission increased by 5 times. Furthermore, one of the competing indirect bandgap emissions disappears, and the defect emission peak dominates the PL spectrum in the wrinkle area with a strain. Furthermore, the discovered principle can be applied to future studies on the integration of enhanced emission and single photon emission involving selectively depopulating the conduction band of the host crystal to defect levels for quantum emitters.

2D materials↗
NASA NTRS2008

Heterogeneous Superconducting Low-Noise Sensing Coils

A heterogeneous material construction has been devised for sensing coils of superconducting quantum interference device (SQUID) magnetometers that are subject to a combination of requirements peculiar to some advanced applications, notably including low-field magnetic resonance imaging for medical diagnosis. The requirements in question are the following: The sensing coils must be large enough (in some cases having dimensions of as much as tens of centimeters) to afford adequate sensitivity; The sensing coils must be made electrically superconductive to eliminate Johnson noise (thermally induced noise proportional to electrical resistance); and Although the sensing coils must be cooled to below their superconducting- transition temperatures with sufficient cooling power to overcome moderate ambient radiative heat leakage, they must not be immersed in cryogenic liquid baths. For a given superconducting sensing coil, this combination of requirements can be satisfied by providing a sufficiently thermally conductive link between the coil and a cold source. However, the superconducting coil material is not suitable as such a link because electrically superconductive materials are typically poor thermal conductors. The heterogeneous material construction makes it possible to solve both the electrical- and thermal-conductivity problems. The basic idea is to construct the coil as a skeleton made of a highly thermally conductive material (typically, annealed copper), then coat the skeleton with an electrically superconductive alloy (typically, a lead-tin solder) [see figure]. In operation, the copper skeleton provides the required thermally conductive connection to the cold source, while the electrically superconductive coating material shields against Johnson noise that originates in the copper skeleton.

Hahn, Inseob↗
DOE OSTI2025

First-Principles Dissociation Pathways of BCl 3 on the Si(100)-2 × 1 Surface

BCl 3 is a promising acceptor precursor for atomic-precision δ-doping of silicon, as it has been observed to rapidly dissociate into boron doped into the silicon surface and surface chlorine, which can be removed upon annealing. The chemical pathway and the resulting kinetics, through which BCl 3 adsorbs and dissociates on silicon, however, have only been partially explained. Here, in this work, we use density functional theory to expand the dissociation reactions of BCl 3 to include reactions that take place across multiple silicon dimer rows and reactions which end in a bare B atom either at the surface, substituted for a surface silicon, or in a subsurface position. We further simulate the resulting scanning tunneling microscopy images for each of these BCl x dissociation fragments, demonstrating that they often display distinct features that may allow for relatively confident experimental identification. Finally, we input the full dissociation pathway for BCl 3 into a kinetic Monte Carlo model, which simulates realistic reaction pathways as a function of environmental conditions, such as the pressure and temperature of dosing. We find that BCl 2 is broadly dominant at low temperatures, while high temperatures and ample space on the silicon surface for dissociation encourage the formation of bridging BCl fragments and B substitutions on the surface. This work provides the chemical mechanisms for understanding atomic-precision doping of Si with B, enabling a number of relevant quantum applications, such as bipolar nanoelectronics, acceptor-based qubits, and superconducting Si.

Campbell, Quinn T. [Sandia National Laboratories (↗
DOE OSTI2020

Se diffusion in CdTe thin films for photovoltaics

Manipulating CdSeTe bandgrading to enhance photocurrent and carrier lifetime is an essential part of high-performance CdTe photovoltaics (PVs). Here, we examine Se diffusion kinetics in single-crystal and polycrystalline CdTe during deposition, thermal annealing, and CdCl 2 treatments. Se distributions are determined by dynamic secondary-ion-mass spectroscopy and Auger electron spectroscopy depth profiling and coupled with electron backscatter diffraction images of the crystalline structure. Effective bulk and grain boundary diffusion coefficients are determined by analytical models and discussed in the context of processing and film morphology. Se is found to diffuse in CdTe at much higher rates during CdCl 2 treatments than with thermal processing alone. GB diffusion also occurs at a significantly faster rate than bulk diffusion. As a result of these two effects, the near interface bulk and GB Se diffusion during CdCl 2 treatments dominates the bandgrading profiles in CdTe PVs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Short-Range Order Tunes Optical Properties in Long-Range Disordered ZnSnN2-ZnO Alloy

Local site ordering offers a new paradigm for property control in functional materials. However, systems that exhibit a propensity for local order and global disorder are often challenging to characterize, and demonstrations of ordering-induced property tuning are few and far between. Here, we demonstrate that short-range ordering tunes the optical absorption edge in the long-range disordered alloy system (ZnSnN2)1-x(ZnO)2x at x = 0.25. We use combinatorial cosputtering to synthesize a set of thin-film samples spanning this alloy space. X-ray diffraction demonstrates lattice contraction as a function of alloy composition, confirming that a mixed-anion and -cation alloy has been synthesized. Using N and O K-edge X-ray absorption near-edge structure in conjunction with simulations of cation-disordered supercell structures, we find that samples exhibit octet-rule-breaking motifs around both anions. Upon annealing at an alloy composition of x = 0.25, X-ray absorption analysis suggests that local motif structure shifts toward octet-rule-conserving while long-range disorder is maintained. Spectroscopic ellipsometry reveals that local ordering increases the absorption edge energy at constant composition. Additionally, alloy-induced optical absorption edge tuning is demonstrated. This work paves the way toward property tuning with short-range ordering in (ZnSnN2)1-x(ZnO)2x and beyond.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Flat bands in the CoSn-type compounds

Quantum interference on the kagome lattice generates electronic bands with narrow bandwidth, called flat bands. Crystal structures incorporating this lattice can host strong electron correlations with nonstandard ingredients, but only if these bands lie at the Fermi level. In the six compounds with the CoSn structure type (FeGe, FeSn, CoSn, NiIn, RhPb, and PtTl) the transition metals form a kagome lattice. The two iron variants are robust antiferromagnets so we focus on the latter four and investigate their thermodynamic and transport properties. We consider these results and calculated band structures to locate and characterize the flat bands in these materials. Finally, we propose that CoSn and RhPb deserve the community's attention for exploring flat-band physics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing

Ga2O3 is being actively explored for power electronics, deep-ultraviolet optoelectronics, and other applications due to its ultra-wide bandgap and low projected fabrication cost of large-size and high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles due to deep character of acceptor levels and polaron transport of resulting holes. However, successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, and free carrier concentration, providing opportunities for predictive process simulation. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen-oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. This process is similar to the Mg acceptor activation by H removal in GaN. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. The resulting free hole concentration in quenched samples is very low (109 – 1012 cm-3) due to deep energy level of these Mg acceptors, but this type converted Ga2O3 material can create a significant built-in field in a p-n junction with an adjoining n-type material. Additionally, the electron concentration is greatly suppressed in such acceptor-doped Ga2O3, which could enable the use as a current blocking layer to fabricate normally-off (enhancement-mode) vertical Ga2O3 based metal-oxide-semiconductor field effect transistors (MOSFETs), and as a guard ring for edge termination in MOSFETs and Schottky barrier diodes (SBDs) with increased breakdown voltage.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗
DOE OSTI2024

GdWN 3 is a nitride perovskite

Nitride perovskites ABN3 are an emerging and highly underexplored class of materials that are of interest due to their intriguing calculated ferroelectric, optoelectronic, and other functional properties. Incorporating novel A-site cations is one strategy to tune and expand such properties; for example, Gd 3+ is compelling due to its large magnetic moment, potentially leading to multiferroic behavior. However, the theoretically predicted ground state of GdWN 3 was a non-perovskite monoclinic structure. Here, we experimentally show that GdWN 3-y crystallizes in a perovskite structure. High-throughput combinatorial sputtering with activated nitrogen is employed to synthesize thin films of Gd 2-x W x N 3-y O y with oxygen content y < 0.05. Ex situ annealing crystallizes a polycrystalline perovskite phase in a narrow composition window near x = 1. LeBail fits of synchrotron grazing incidence wide angle x-ray scattering data are consistent with a perovskite ground-state structure. Refined density functional theory calculations that included antiferromagnetic configurations confirm that the ground-state structure of GdWN 3 is a distorted Pnma perovskite with antiferromagnetic ordering, in contrast to prior predictions. Initial property measurements find that GdWN 3-y is paramagnetic down to T = 2 K with antiferromagnetic correlations and that the absorption onset depends on cation stoichiometry. This work provides an important path toward both the rapid expansion of the emerging family of nitride perovskites and understanding their potential multiferroic properties.

14 SOLAR ENERGY↗
DOE OSTI2025

Resistive Switching in SrFeO2.5/Nb:SrTiO3 Heterostructures with Growth-Controlled Film Orientation

Resistive switching, a behavior found in many oxide materials, has the potential to enable emerging computer hardware technologies and architectures. We present resistive switching devices fabricated from epitaxial brownmillerite SrFeO2.5 films with two distinct film orientations, wherein facile oxygen ion diffusion planes are aligned parallel (in-plane) and perpendicular (out-of-plane) with the electrodes. SrFeO2.5 films were grown on (001) oriented Nb:SrTiO3 to enable high-quality interfaces and future integration with Si CMOS technologies. Post-growth vacuum annealing and growth pressure were used to control film orientations, as confirmed by transmission electron microscopy and x-ray diffraction measurements. Films grown with diffusion planes oriented in-plane had oxygen-rich, perovskite-like nanodomains spread throughout the film, and fabricated devices exhibited worse switching consistency and more stochasticity. In contrast, films grown with diffusion planes oriented out-of-plane had a more uniform oxygen-rich perovskite interfacial layer above the bottom electrode, and devices built from this film orientation showed significant statistical improvements in switching voltages and cycling consistency.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Modifying magnetic properties of MnBi with carbon: an experimental and theoretical study

MnBi and MnBi-based materials have been investigated as prospective rare-earth-free permanent magnets with moderate energy product. One of the main issues with MnBi synthesis is the presence of residual Bi in the sample which reduces the net magnetization. Here, we have found that MnBi synthesized in the presence of carbon substantially reduces the amount of residual Bi, improving its saturation magnetization. We have synthesized Mn 55 Bi 45 and Mn 55 Bi 45 C x samples using arc melting and high-vacuum annealing. The room temperature x-ray diffraction patterns indicate that both Mn 55 Bi 45 and Mn 55 Bi 45 C x crystallize in the hexagonal NiAs-type structure. The Rietveld analysis of the x-ray patterns shows that the amount of residual Bi reduces from 16 wt.% for Mn 55 Bi 45 to 5 wt.% for Mn 55 Bi 45 C x . The high-field (3 T) magnetizations measured at room temperature are 61 emu g –1 and 66 emu g –1 for Mn 55 Bi 45 and Mn 55 Bi 45 C x , respectively. To understand the role of C in enhancing the magnetization of MnBi, we carried out the first-principles calculations of both stoichiometric and nonstoichiometric MnBi alloys, which suggests that the increase of magnetization in Mn 55 Bi 45 C x may be due to the coating of MnBi grains with C.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Tunable and Robust Optical and Structural Properties of a Cooperative Squaraine-Dye Aggregate-DNA DX-DAE Tile System

Molecular excitons, which are excitations delocalized over multiple dyes in a wavelike manner, are of interest for a wide range of applications, including quantum information science. Numerous studies have templated a variety of synthetic dyes via a DNA scaffold to induce dye aggregation to create molecular excitons upon photoexcitation. Dye aggregate optical properties are critically dependent on relative dye geometry and local environment; therefore, an understanding of dye-dye and DNA-dye interactions is critical for advancing toward more complex DNA-dye systems. The extensively studied DNA Holliday junction (HJ) and less-studied double-crossover (DX) tile motif are fundamental test beds for designing complex and ultimately modular DNA-dye architectures. Here, we report the first study of single-linked squaraine dye aggregation and exciton delocalization on a larger and more stable (compared with the HJ) DX tile motif. We first highlight a few DNA-dye constructs that support single dyes and aggregates with distinct optical properties that are both tunable—through sample design, buffer conditions, and heat treatment—and robust to environment changes, including transfer to solid phase. Next, we assess several experimental and design considerations that demonstrate directed dye-driven assembly of a novel double-tile DNA configuration. Our results demonstrate that single-linked squaraine dyes templated to DX tiles provide a viable research path to design and evaluate dye aggregate networks that support exciton delocalization. We include herein the first report of exciton delocalization in the solid phase in a DNA-dye construct. Additionally, our findings indicate that dye aggregation impacts the assembly of the DNA-dye construct, and, in some cases, thereby cooperates with the DNA to determine a final robust system configuration. Finally, we show that a controlled annealing schedule can be employed to promote the homogeneous assembly of DNA-dye constructs. The findings in this study contribute to the understanding of DNA-dye systems and the relevant factors involved in their directed assembly to achieve specific constructs with desirable properties.

36 MATERIALS SCIENCE↗
DOE OSTI2025

A Black Hole Airy Tail

In Jackiw-Teitelboim (JT) gravity, which is dual to a random matrix ensemble, the annealed entropy differs from the quenched entropy at low temperatures and goes negative. However, computing the quenched entropy in JT gravity requires a replica limit that is poorly understood. To circumvent this, we define an intermediate quantity called the semi-quenched entropy, which has the positivity properties of the quenched entropy, while requiring a much simpler replica trick. We compute this in JT gravity in different regimes using i) a bulk calculation involving wormholes corresponding to the Airy limit of the dual matrix integral and ii) a boundary calculation involving one-eigenvalue instanton saddles proposed by Hernández-Cuenca, demonstrating consistency between these two calculations in their common regime of validity. We also clarify why similar one-eigenvalue instanton saddles cannot be used to compute the quenched entropy due to a breakdown of the saddle-point approximation for the one-eigenvalue instanton in the replica limit. Our results show how to use the gravitational path integral to prove that black holes in JT gravity have isolated ground states and to study their properties.

FOS: Physical sciences↗
DOE OSTI2024

Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

Most semiconductors exhibit a saturation of free carriers when heavily doped with extrinsic dopants. This carrier saturation or “doping limit” is known to be related to the formation of native compensating defects, which, in turn, depends on the energy positions of their conduction band minimum and valence band maximum. Here, we carried out a systematic study on the n-type doping limit of GaAs via ion implantation and showed that this doping limitation can be alleviated by the transient process of pulsed laser melting (PLM). For n-type doping, both group VI (S) and amphoteric group IV (Si and Ge) dopants were implanted in GaAs. For comparison, p-type doping was also studied using Zn as the acceptor. Implanted dopants were activated by the PLM method, and the results are compared to rapid thermal annealing (RTA). Our results reveal that for all n-type dopants, while implantation followed by the RTA results in a similar saturation electron concentration of 2–3 × 10 18 cm –3 , the transient PLM process is capable of trapping high concentration of dopants in the substitutional site, giving rise to a carrier concentration of >10 19 cm –3 , exceeding the doping limit of GaAs. However, due to scatterings from point defects generated during PLM, the mobility of n-type GaAs after PLM is low (~80–260 cm 2 /V s). Subsequent RTA after PLM (PLM + RTA) is able to remove these point defects and recover the mobility to ~1000–2000 cm2/V s. The carrier concentrations of these PLM + RTA samples are reduced but are still a factor of 3 higher than RTA only GaAs. This can be understood as the dopants are already incorporated in the substitutional site after PLM; they are less likely to be “deactivated” by subsequent RTA. This work is significant to the understanding of doping mechanisms in semiconductors and provides a means for device applications, which require materials with ultra-high doping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Black Hole Airy Tail

In Jackiw-Teitelboim (JT) gravity, which is dual to a random matrix ensemble, the annealed entropy differs from the quenched entropy at low temperatures and goes negative. However, computing the quenched entropy in JT gravity requires a replica limit that is poorly understood. To circumvent this, we define an intermediate quantity called the semiquenched entropy, which has the positivity properties of the quenched entropy, while requiring a much simpler replica trick. We compute this in JT gravity in different regimes using (i) a bulk calculation involving wormholes corresponding to the Airy limit of the dual matrix integral and (ii) a boundary calculation involving one-eigenvalue instanton saddles proposed by Hernández-Cuenca, demonstrating consistency between these two calculations in their common regime of validity. We also clarify why similar one-eigenvalue instanton saddles cannot be used to compute the quenched entropy due to a breakdown of the saddle-point approximation for the one-eigenvalue instanton in the replica limit. Our results show how to use the gravitational path integral to prove that black holes in JT gravity have isolated ground states and to study their properties.

Gauge-gravity dualities↗
DOE OSTI2023

X-ray continuum spectroscopy of inertial confinement fusion implosions at the National Ignition Facility

A methodology for measuring x-ray continuum spectra of inertial confinement fusion (ICF) implosions is described. The method relies on the use of ConSpec, a high-throughput spectrometer using a highly annealed pyrolytic graphite crystal , which measures the spectra in the ≃20–30 keV range. Due to its conical shape, the crystal is sagittally focusing a Bragg-reflected x-ray spectrum into a line, which enhances the recorded x-ray emission signal above the high neutron-induced background accompanying ICF implosions at the National Ignition Facility. To improve the overall measurement accuracy, the sensitivity of the spectrometer measured in an off-line x-ray laboratory setting was revised. The error analysis was expanded to include the accuracy of the off-line measurements, the effect of the neutron-induced background, as well as the influence of possible errors in alignment of the instrument to the ICF target. Here we demonstrate how the improved methodology is applied in the analysis of ConSpec data with examples of a relatively low-neutron-yield implosion using a tritium–hydrogen–deuterium mix as a fuel and a high-yield deuterium–tritium (DT) implosion producing high level of the background. In both cases, the shape of the measured spectrum agrees with the exponentially decaying spectral shape of bremsstrahlung emission to within ±10%. In the case of the high-yield DT experiment, non-monotonic deviations slightly exceeding the measurement uncertainties are observed and discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗