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At least 343 records · Page 19

A Near-Infrared Mapping Spectrometer for investigation of Jupiter and its satellites

The Near-Infrared-Mapping Spectrometer (NIMS) is one of the science instruments in the Galileo mission, which will explore Jupiter and its satellites in the mid-1990's. The NIMS experiment will map geological units on the surfaces of the Jovian satellites and characterize their mineral content; and, for the atmosphere of Jupiter, investigate cloud properties and the spatial and temporal variability of molecular abundances. The optics are gold-coated reflective and consist of a telescope and a grating spectrometer. The balance of the instrument includes a 17-detector (silicon and indium antimonide) focal plane array, a tuning fork chopper, microprocessor-controlled electronics, and a passive radiative cooler. A wobbling secondary mirror in the telescope provides 20 pixels in one dimension of spatial scanning in a pushbroom mode with 0.5 mr x 0.5 mr instantaneous field of view. The spectral range is 0.7-5.2 microns; resolution is 0.025 micron. NIMS is the first infrared experiment to combine both spatial and spectral mapping capability in one instrument.

Aptaker, Irving M.↗

Feasibility of an uncooled imaging spectrometer for the exploration of the solar system

A state-of-the-art imaging spectrometer concept is presented for visible-midwavelength IR spectral region studies of the solar system that obviates the until-now essential use of cryogenic cooling. This uncooled imaging spectrometer configuration is evaluated in view of the prospective environments of the instrument in various spacecraft orbits, as well as in light of various available photodetector materials and sensor focal plane array configurations.

Liaw, H. M.↗

The tapered slot antenna - A new integrated element for millimeter-wave applications

Tapered slot antennas (TSAs) with a number of potential applications as single elements and focal-plane arrays are discussed. TSAs are fabricated with photolithographic techniques and integrated in either hybrid or MMIC circuits with receiver or transmitter components. They offer considerably narrower beams than other integrated antenna elements and have high aperture efficiency and packing density as array elements. Both the circuit and radiation properties of TSAs are reviewed. Topics covered include: antenna beamwidth, directivity, and gain of single-element TSAs; their beam shape and the effect of different taper shapes; and the input impedance and the effects of using thick dielectrics. These characteristics are also given for TSA arrays, as are the circuit properties of the array elements. Different array structures and their applications are also described.

Yngvesson, K. Sigfrid↗

Ge/Si Integrated Circuit For Infrared Imaging

Proposed integrated circuit consists of focal-plane array of metal/germanium Schottky-barrier photodetectors on same chip with silicon-based circuits that processes signals from photodetectors. Made compatible with underlying silicon-based circuitry by growing germanium epitaxially on silicon circuit wafers. Metal deposited in ultrahigh vacuum immediately after growth of germanium. Combination of described techniques results in high-resolution infrared-imaging circuits of superior performance.

Fathauer, Robert W.↗

Layered Internal-Photoemission Sensor

High quantum efficiency achieved without multiple layer contacts. Proposed infrared sensor based on photoemission from multiple layers of metal silicide sandwiched between layers of silicon. Suitable for use in focal-plane arrays. Layered internal-photoemission sensor has positive/intrinsic/negative structure modified by inclusion of layers or islands of metal silicide. Holes photo-excited from silicide regions and swept to detection by reverse-bias electric field in intrinsic silicon. Easier to make because internal layers allowed to "float" electrically, contact being made with only two outer semiconductor layers.

Fathauer, Robert W.↗

Advances in SIS receiver technology

Significant advances in SIS receiver technology since the last Asilomar meeting include: superconductor materials, integrated inductive tuning elements, and planar mounting structures. The effect of these advances is to push the upper frequency operating limit from about 600 to 1500 GHz, and to enhance the feasibility of focal plane arrays of heterodyne receivers. A fundamental high frequency operating limit of SIS mixers is set by the superconducting energy gap. A practical limitation for high frequency operation of SIS junctions is their parasitic capacitance and resistance. The performance of the mixer will be degraded by the Resistor-Capacitor rolloff. Several designs were reported for inductive elements integrated on the same substrate as the SIS junctions to tune out the bulk junction capacitance. Most millimeter SIS-based heterodyne receivers have used waveguide coupling structures. Technology has advanced to the state where programs that have a high probability of success can be defined to produce arrays of SIS receivers for frequencies as high as 1500 GHz.

Frerking, M. A.↗

Low noise HgCdTe 128 x 128 SWIR FPA for Hubble space telescope

Large area focal plane arrays of unprecedented performance were developed for use in Near Infrared Camera and Multi-Object Spectrometer (NICMOS), a proposed Hubble Space Telescope refurbishment instrument. These FPAs are 128x128-element, HgCdTe hybrid arrays with a cutoff wavelength of 2.5 microns. The multiplexer consists of a CMOS field effect transistor switch array with a typical mean readout noise of less than 30 electrons. The detectors typically have a mean dark current of less than 10 electrons/s at 77 K, with currents below 2 electrons measured at 60 K (both at 0.5 V reverse bias). The mean quantum efficiency is 40 to 60 percent at 77 K for 1.0 to 2.4 microns. Functional pixel yield is typically greater than 99 percent, and the power consumption is approximately 0.2 mW (during readout only).

Blessinger, Michael↗

HgCdTe 256x256 NWIR FPA

Researchers developed a HgCdTe 256x256 focal plane array (FPA) which operates in the 1 to 5 micron band. This is presently the largest demonstrated HgCdTe FPA. The detector material is HgCdTe on sapphire (PACE-1 technology) which has a low thermal expansion mismatch with silicon. The multiplexer is a CMOS FET-switch device processed through a commercial silicon foundry. The multiplexer input is direct injection and the charge capacity is about 2 times 10 to the 7th power electrons. The kTC limited read noise is 400 electrons. Researchers demonstrated high background imaging using the device. The broadband quantum efficiency is measured to be 59 percent. Dark currents less than 0.1 pA were measured at 77 K for detectors processed on PACE-1 material with 4.9 microns cutoff. The dark currents decrease as the temperature is lowered, and researchers are presently studying the T less than 77 K characteristics. The interconnect yield is greater than 95 percent. The devices are available for astronomical applications.

Vural, Kadri↗

Imaging spectrometry - Technology and applications

The development history and current status of NASA imaging-spectrometer (IS) technology are discussed in a review covering the period 1982-1988. Consideration is given to the Airborne IS first flown in 1982, the second-generation Airborne Visible and IR IS (AVIRIS), the High-Resolution IS being developed for the EOS polar platform, improved two-dimensional focal-plane arrays for the short-wave IR spectral region, and noncollinear acoustooptic tunable filters for use as spectral dispersing elements. Also examined are approaches to solving the data-processing problems posed by the high data volumes of state-of-the-art ISs (e.g., 160 MB per 600 x 600-pixel AVIRIS scene), including intelligent data editing, lossless and lossy data compression techniques, and direct extraction of scientifically meaningful geophysical and biophysical parameters.

Solomon, Jerry E.↗

Ir/IrSi3/Si Schottky-Barrier Infrared Detector

Quantum efficiency increased. Proposed Schottky-barrier infrared detector has double metallic layer of Ir and IrSi3 instead of single metallic layer of Ir, IrSi, or IrSi3. Offers advantages of both relatively high infrared absorption in thin film of Ir and stability and reproducibility of layer of IrSi3 in contact with Si. Also serves as barrier to chemical reactions between Ir overlayer and Si substrate. Detectors used to form focal-plane array integrated with charge-coupled-device-addressing and image-processing circuitry.

Lin, True-Lon↗

Si(1-x)Ge(x)/Si Infrared Photodiodes

Cutoff wavelengths depend on x and also adjusted somewhat via reverse bias. Si1-xGex photodiodes with cutoff wavelengths in and beyond practically important range of 8 to 12 micrometers made by molecular-beam epitaxy. Compatible (in terms of fabrication processes) with silicon readout circuitry, exhibit long-term stability, manufactured with sufficient uniformity for use in focal-plane arrays; and operate at temperatures approximately greater than 65 K, for which temperatures small, portable refrigerators available.

Lin, True-Lon↗

Innovative Long Wavelength Infrared Detector Workshop Proceedings

The focus of the workshop was on innovative long wavelength (lambda less than 17 microns) infrared (LWIR) detectors with the potential of meeting future NASA and DoD long-duration space application needs. Requirements are for focal plane arrays which operate near 65K using active refrigeration with mission lifetimes of five to ten years. The workshop addressed innovative concepts, new material systems, novel device physics, and current progress in relation to benchmark technology. It also provided a forum for discussion of performance characterization, producibility, reliability, and fundamental limitations of device physics. It covered the status of the incumbent HgCdTe technology, which shows encouraging progress towards LWIR arrays, and provided a snapshot of research and development in several new contender technologies.

Grunthaner, Frank J.↗

LWIR HgCdTe: Innovative detectors in an incumbent technology

HgCdTe is the current material of choice for high performance imagers operating at relatively high temperatures. Its lack of technological maturity compared with silicon and wide-band gap III-V compounds is more than offset by its outstanding IR sensitivity and by the relatively benign effect of its materials defects. This latter property has allowed non-equilibrium growth techniques, metal oxide chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), to produce device quality long wavelength infrared (LWIR) HgCdTe even on common substrates like GaAs and GaAs/Si. Detector performance in these exotic materials structures is comparable in many ways with devices in equilibrium-grown material. Lifetimes are similar. RoA values at 77K as high as several hundred have been seen in HgCdTe/GaAs/Si with 9.5 micron cut-off wavelength. HgCdTe/GaAs layers with approx. 15 micron cut-off wavelengths have given average 77K RoAs of greater than 2. Hybrid focal plane arrays have been evaluated with excellent operability.

Tennant, William E.↗

InAs/GaAs and InAs doping superlattices

The extension of the optical response of narrow band gap III-V semiconductors into the long wavelength infrared radiation (LWIR) regime for high sensitivity sensor applications is a challenging problem. Recent advances in nipi doped GaAs superlattices, lattice mismatched epitaxy and the heteroepitaxial growth of III-V compound semiconductors on silicon substrates offer a number of opportunities. Researchers describe two different device approaches based on the molecular beam epitaxy (MBE) growth of superlattice materials which are directed to LWIR focal plane array technology. The first of these uses nipi superlattices fabricated in bulk InAs which has been grown on either GaAs or Si substrates. The second is based on the growth of a new pseudomorphic tetragonal phase of InAs on GaAs to create a semimetal/semiconductor superlattice material.

Grunthaner, Frank J.↗

Laterally stacked Schottky diodes for infrared sensor applications

Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.

Lin, True-Lon↗

Infrared focal plane performance in the South Atlantic anomaly

Proton-induced pulse height distributions (PHD's) in Si:XX detectors were studied analytically and experimentally. In addition, a preliminary design for a flight experiment to characterize the response of Si:XX detectors to the trapped proton environment and verify PHD models was developed. PHD's were computed for two orbit altitudes for a variety of shielding configurations. Most of the proton-induced pulses have amplitudes less that about 3.5 x 10(exp 5) e-h pairs. Shielding has a small effect on the shape of the PHD's. The primary effect of shielding is to reduce the total number of pulses produced. Proton-induced PHD's in a Si:Sb focal plane array bombarded by a unidirectional 67-MeV beam were measured. The maximum pulse height recorded was 6 x 10(exp 5) pairs. The distribution had two peaks: the larger peak corresponded to 3.8 x 10(exp 5) pairs and the smaller peak to 1.2 x 10(exp 5) pairs. The maximum pulse height and the larger peak are within a factor of two of predicted values. The low-energy peak was not expected, but is believed to be an artifact of inefficient charge collection in the detector. The planned flight experiment will be conducted on a Space Shuttle flight. Lockheed's helium extended life dewar (HELD) will be used to provide the required cryogenic environment for the detector. Two bulk Si:Sb arrays and two Si:As impurity band conduction arrays will be tested. The tests will be conducted while the Space Shuttle passes through the South Atlantic Anomaly. PHD's will be recorded and responsivity changes tracked. This experiment will provide a new database on proton-induced PHD's, compare two infrared detector technologies in a space environment, and provide the data necessary to validate PHD modeling.

Junga, Frank A.↗

Programmable Hyperspectral Imaging Mapper

Programmable hyperspectral imaging mapper (PHIMAP) is conceptual generic advanced spectral imaging system that scans swath along ground track from airplane or spacecraft in orbit. Features include spectrally agile filters and processing on focal-plane array. Provides both high spatial resolution and large number of spectral channels. Can be programmed to trade spectral resolution andspectral coverage flexibly against signal-to-noise ratio to optimize utility of image data from scenes of spectrally and spatially varying brightness.

Cutts, James A.↗

Radiation model predictions and validation using LDEF data

Radiation dosimetry aboard LDEF, as well as post-flight measurements of the radioactivity induced in numerous LDEF spacecraft components, provide unique data for evaluating the accuracy of current models for predicting both the space radiation environments (trapped proton intensity, spectra, and directionality; cosmic ray fluence) and the radiation environments induced in spacecraft components (fluence, energy spectra, secondary particle, linear energy transfer, etc.). By determining the accuracy of such models using LDEF data, and with model updates where required, improved radiation environment predictions can be made for future missions, which in turn allows improved predictions for specific radiation effects for future spacecraft components (single event upsets of microelectronics, radiation damage to focal plane arrays, noise in sensitive instrumentation, etc.). Herein, the status and results from radiation model predictions and comparisons with LDEF data is given. The calculations are made using radiation transport codes coupled with a 3-D geometry/mass model of LDEF, together with current models of the space radiation environment.

Armstrong, T. W.↗