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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1968

High-temperature-materials study

Chemical vapor deposition of aluminum phosphides onto single crystals of silicon and gallium arsenide for producing high temperature operating solid state electronic devices

Baxter, R. D.↗
NASA NTRS1972

Temperature-time relationships from lunar two phase metallic particles /14310, 14163, 14003/.

Electron-microprobe and metallographic techniques are applied in an analysis of individual phases in two-phase metallic alpha + gamma particles and phosphide-metal particles separated magnetically or mechanically from three lunar soil samples. The interface equilibrium temperatures of the two-phase particles during their lunar residence are inferred from experimental Fe-Ni and Fe-Ni-P equilibrium diagrams. Times of equilibration are determined in some cases.

Axon, H. J.↗
NASA NTRS1974

Metal silicate relationships in Apollo 17 soils

A petrographic, metallographic, and electron probe study of particles from two Apollo 17 soils is reported. A mixing model for the formation of the Apollo 17 soils is proposed. It is found that equilibration temperatures for two-phase metal aggregates range from 375 to 475 C for metal-phosphide particles and from 480 to 630 C for alpha-gamma particles, and that the anorthositic soil particles contain metal of meteoritic Ni-Co content. The Camelot Crater and the Sculptured Hills soil compositions are discussed.

Goldstein, J. I.↗
NASA NTRS1977

The metallic microstructures and thermal histories of severely reheated chondrites

The metallographic structures of eight severely reheated chondrites - Farmington, Ramsdorf, Orvinio, Wickenburg, Lubbock, Rose City, Arapahoe, and Tadjera - were studied using optical, SEM and electron microprobe techniques. The following metallographic criteria were used to estimate the post-shock residual temperature of the chondrites: melted metal-troilite appearance, presence of martensite, phosphorus enrichment of metal and averaging of central metal grain compositions. The presence of phosphides and secondary kamacite are due to slow post-shock cooling rates. Ni rim gradients indicate both extensive remelting of metal grains and relatively fast cooling.

Smith, B. A.↗
NASA NTRS1969

Method for the preparation of inorganic single crystal and polycrystalline electronic materials

Large area, semiconductor crystals selected from group 3-5 compounds and alloys are provided for semiconductor device fabrication by the use of a selective etching operation which completely removes the substrate on which the desired crystal was deposited. The substrate, selected from the same group as the single crystal, has a higher solution rate than the epitaxial single crystal which is essentially unaffected by the etching solution. The preparation of gallium phosphide single crystals using a gallium arsenide substrate and a concentrated nitric acid etching solution is described.

Groves, W. O.↗
NASA NTRS1978

Lightweight porous plastic plaque

The porosity and platability of various materials were investigated to determine a suitable substrate for nickel-plated electrodes. Immersion, ultrasonics, and flow-through plating techniques were tried using nonproprietary formulations, and proprietary phosphide and boride baths. Modifications to the selected material include variations in formulation and treatment, carbon loading to increase conductivity, and the incorporation of a grid. Problems to be solved relate to determining conductivities and porosities as a function of amount of nickel plated on the plastics; loading; charge and discharge curves of electrodes at different current densities; cell performance; and long-term degradation of electrodes.

Reid, M.↗
NASA NTRS1978

Modified silicon-germanium alloys with improved performance

This paper discusses the results of a program on the modification of silicon-germanium alloys by means of small extraneous material additions in order to improve their figures-of-merit. A review of the properties that constitute the figure-of-merit indicates that it is the relatively high thermal conductivity of silicon-germanium alloys that is responsible for their low values of figure-of-merit. The intent of the effort discussed in this paper is therefore the reduction of the thermal conductivity of silicon-germanium alloys by minor alloy additions and/or changes in the basic structure of the material. Because Group III and V elements are compatible with silicon and germanium, the present effort in modifying silicon-germanium alloys has concentrated on additions of gallium phosphide. A significant reduction in thermal conductivity, approximately 40 to 50 percent, has been demonstrated while the electrical properties are only slightly affected as a result. The figure-of-merit of the resultant material is enhanced over that of silicon-germanium alloys and when fully optimized is potentially better than that of any other presently available thermoelectric material.

Pisharody, R. K.↗
NASA NTRS1980

Crystal growth of device quality GaAs in space

The apparatus and techniques used in effort to determine the relationships between crystal growth and electronic properties are described with emphasis on electroepitaxy and melt-grown gallium aresenide crystal. Applications of deep level transient spectroscopy, derivative photocapitance spectroscopy, and SEM-cathodoluminescene in characterizing wide bandgap semiconductors; determining photoionization in MOS, Schottky barriers, and p-n junctions; and for identifying inhomogeneities are examined, as well as the compensation of indium phosphide.

Gatos, H. C.↗
NASA NTRS1982

IC Capacitors on Groups III-to-V Substrates

Oxides applied by a "spin-on" process have been used to fabricate capacitors on gallium arsenide and indium phosphide substrates: they might also be used with other compounds of elements in groups III to V of the periodic table. The III-to-V materials are attractive for integrated circuits because they offer responses potentially six times faster than silicon.

Alcorn, G. E.↗
NASA NTRS1981

Advanced high temperature thermoelectrics for space power

Preliminary results from a spacecraft system study show that an optimum hot junction temperature is in the range of 1500 K for advanced nuclear reactor technology combined with thermoelectric conversion. Advanced silicon germanium thermoelectric conversion is feasible if hot junction temperatures can be raised roughly 100 C or if gallium phosphide can be used to improve the figure of merit, but the performance is marginal. Two new classes of refractory materials, rare earth sulfides and boron-carbon alloys, are being investigated to improve the specific weight of the generator system. Preliminary data on the sulfides have shown very high figures of merit over short temperature ranges. Both n- and p-type doping have been obtained. Pure boron-carbide may extrapolate to high figure of merit at temperatures well above 1500 K but not lower temperature; n-type conduction has been reported by others, but not yet observed in the JPL program. Inadvertant impurity doping may explain the divergence of results reported.

Lockwood, A.↗
NASA NTRS1980

Redistribution of volatiles during lunar metamorphism

Thermal release profiles of Pb, Zn, and Cd in sample 66095 (highly shocked breccia with melt rock matrix) showed that these volatiles were mostly present on the surface of the grains. Zn in rusty grains from 66095 was also mostly surface Zn, probably from sphalerite in grain boundaries and cracks. Simulation experiments of volatile transfer showed that Fe, FeCl2, iron phosphide, and troilite (FeS) can be produced and transported during subsolidus reactions. These results suggest that volatiles, rust, schreibersite, and possible siderophiles which are observed in lunar highland samples might have been redistributed during disequilibrium thermal metamorphism in hot ejecta blankets, and were not necessarily introduced by volcanic activity or meteoritic addition.

Cirlin, E. H.↗
NASA NTRS1982

Rust and schreibersite in Apollo 16 highland rocks - Manifestations of volatile-element mobility

Rust is a manifestation of halogen and volatile-metal mobility in the lunar environment. Schreibersite is stable as the primary phosphorus-bearing phase in the highland rocks, a consequence of the inherently low oxygen fugacity within impact-generated melts. Apatite and whitlockite are subordinate in these rocks. The partitioning of P into phosphide in impact-generated melts, and the failure of phosphate to crystallize, effects a decoupling of the halogens and phosphorus. Of the Apollo 16 rocks, 63% contain rust, 70% contain schreibersite, and 52% contain both phases, thereby establishing the pervasiveness of volatile-elements throughout the highland rocks. The major portion of these volatile-bearing phases occur in impact melt-rocks or in breccia matrices. Rhabdites of schreibersite in some of the FeNi grains indicate that there is a meteoritic contribution to the phosphorus in these rocks. Cl/P2O5 ratios in lunar highland rocks are a function of secondary effects, with any apparent Cl-P correlations being coincidential. The present observations preclude the validity of models based on such elemental ratios in these rocks. The presence of rust in the clast laden matrices of pristine rocks indicates fugitive element localization. Pristine clasts may have been contaminated. The basis for a pristine volatile chemistry is questioned.

Hunter, R. H.↗