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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Design considerations of series type hybrid circuit breaker (S‐HCB)

Abstract The series‐type direct current (DC) hybrid circuit breaker (S‐HCB) concept was previously reported to offer better performance than solid‐state circuit breakers (SSCB) and hybrid circuit breakers (HCB). S‐HCB offers low conduction power loss like an HCB and ‐scale interruption time, which is even faster than an SSCB. It uses a pulse transformer to isolate the lower‐voltage high‐inductance power electronic circuit from the high‐voltage, low‐inductance main power loop. This paper provides analysis of the impact of the S‐HCB circuit components on the overall system performance and a scalable S‐HCB design guide for different DC system voltage and current ratings. In addition, system energy flow analysis is performed in the time domain to provide an understanding of how energy is delivered, dissipated, and released throughout the entire fault interruption process. The S‐HCB prototype was experimentally tested at 3 kV/30 A and 6 kV/150A with the results showing the interruption of the low fault current of 30 A and the high fault current of 150 A within 8 and maintaining the fault current at a near zero value for 300 to enable an arcless opening of a series mechanical switch. The key design challenges of S‐HCB at high voltage and high current ratings were discussed and possible solutions to mitigate those challenges were introduced.

Alashi, Mahmoud↗
DOE OSTI2023

Effective Landau-type model of a Hf x Zr 1 - x O 2 -graphene nanostructure

Here, to describe the charge-polarization coupling in the nanostructure formed by a thin Hf x Zr 1-x O 2 film with a single-layer graphene as a top electrode, we develop the “effective” Landau-Ginzburg-Devonshire model. This approach is based on the parametrization of the Landau expansion coefficients for the polar (FE) and antipolar (AFE) orderings in thin Hf 1-x Zr x O 2 films from a limited number of polarization-field curves and hysteresis loops. The Landau expansion coefficients are nonlinearly dependent on the film thickness h and Zr/[Hf+Zr] ratio x, in contrast to h-independent and linearly x-dependent expansion coefficients of a classical Landau energy. We explain the dependence of the Landau expansion coefficients by the strong nonmonotonic dependence of the Hf 1-x Zr x O 2 film polar properties on the film thickness, grain size and surface energy. The proposed Landau free energy with five “effective” expansion coefficients, which are interpolation functions of x and h, describes the continuous transformation of polarization dependences on applied electric field and hysteresis loop shapes induced by the changes of x and h in the range 0 < x < 1 and 5 nm < h < 35 nm. Using the effective free energy, we demonstrated that the polarization of Hf 1-x Zr x O 2 film influences strongly on the graphene conductivity, and the full correlation between the distribution of polarization and charge carriers in graphene is revealed. In accordance with our modeling, the polarization of the (5 – 25) nm thick Hf 1-x Zr x O 2 films, which are in the ferroelectric-like or antiferroelectric-like states for the chemical compositions 0.35 ≤ x ≤ 0.95, determine the concentration of carriers in graphene and can control its field dependence. The result can be promising for creation of next generation Si-compatible nonvolatile memories and graphene-ferroelectric FETs, because the working voltages applied to the Hf 1-x Zr x O 2 film (which acts as a gate) can be relatively low (less than 2 V). These low voltages are sufficient to induce the pronounced hysteresis of ferroelectric polarization in the Hf 1-x Zr x O 2 gate, which, due to the strong electric coupling, induces the hysteresis of the graphene charge.

36 MATERIALS SCIENCE↗
NASA NTRS2002

Spacewire on Earth orbiting scatterometers

The need for a high speed, reliable and easy to implement communication link has led to the development of a space flight oriented version of IEEE 1355 called SpaceWire. SpaceWire is based on high-speed (200 Mbps) serial point-to-point links using Low Voltage Differential Signaling (LVDS). SpaceWIre has provisions for routing messages between a large network of processors, using wormhole routing for low overhead and latency. {additionally, there are available space qualified hybrids, which provide the Link layer to the user's bus}. A test bed of multiple digital signal processor breadboards, demonstrating the ability to meet signal processing requirements for an orbiting scatterometer has been implemented using three Astrium MCM-DSPs, each breadboard consists of a Multi Chip Module (MCM) that combines a space qualified Digital Signal Processor and peripherals, including IEEE-1355 links. With the addition of appropriate physical layer interfaces and software on the DSP, the SpaceWire link is used to communicate between processors on the test bed, e.g. sending timing references, commands, status, and science data among the processors. Results are presented on development issues surrounding the use of SpaceWire in this environment, from physical layer implementation (cables, connectors, LVDS drivers) to diagnostic tools, driver firmware, and development methodology. The tools, methods, and hardware, software challenges and preliminary performance are investigated and discussed.

serial↗
DOE OSTI2021

Neural interface methods and apparatus to provide artificial sensory capabilities to a subject

Embodiments of neural interfaces according to the present invention comprise sensor modules for sensing environmental attributes beyond the natural sensory capability of a subject, and communicating the attributes wirelessly to an external (ex-vivo) portable module attached to the subject. The ex-vivo module encodes and communicates the attributes via a transcutaneous inductively coupled link to an internal (in-vivo) module implanted within the subject. The in-vivo module converts the attribute information into electrical neural stimuli that are delivered to a peripheral nerve bundle within the subject, via an implanted electrode. Methods and apparatus according to the invention incorporate implantable batteries to power the in-vivo module allowing for transcutaneous bidirectional communication of low voltage (e.g. on the order of 5 volts) encoded signals as stimuli commands and neural responses, in a robust, low-error rate, communication channel with minimal effects to the subjects' skin.

Buerger, Stephen P.↗
DOE OSTI2023

Medium Voltage Solid State Transformer for Extreme Fast Charging Applications

A modular and scalable solid state transformer (SST) with direct medium voltage (MV) AC connectivity is proposed to enable DC extreme fast charging (XFC) of electric vehicles. Single-phase-modules (SPMs), each consisting of an active-front-end (AFE) stage and an isolated DC-DC stage, are connected in input-series-output-parallel (ISOP) configuration. The modular hardware is co-designed with decentralized control of the DC-DC stages where voltage and power balancing are achieved by each SPM using only its local sensor feedback; a centralized controller (CC) regulates the low voltage (LV) DC bus through the AFE stages without any sensor feedback form the SPMs. The controller architecture contrasts sharply with the prior art for MV AC to LV DC SSTs where high-speed bidirectional communication among SPMs and a CC are required for module-level voltage and power balancing, which severely limits the scalability and practical realization of higher voltage and higher power units. Detailed small-signal analysis and controller design guidelines are developed. Furthermore, a soft start-up strategy is presented. The proposed converter and control structure are validated through simulation and experimental results.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS1985

Measurement and analysis of solar cell current-voltage characteristics

Approaches to measurement and analysis of solar cell current-voltage characteristics under dark and illuminated conditions are discussed. Measurements are taken with a computer based data acquisition system for temperatures in the range of -100 to +100 C. In the fitting procedure, the various I(oi) and C(i) as well as R(S) and R(SH) are determined. Application to current-voltage analyses of high efficiency silicon cells and Boeing CdS/CuInSe2 are discussed. In silicon MINP cells, it is found that at low voltages a tunneling mechanism is dominant, while at larger voltages the I-V characteristics are usually dominated by emitter recombination. In the case of Boeing cells, a current transport model based on a tunneling mechanism and interface recombination acting in series has been developed as a result of I-V analyses.

Olsen, Larry C.↗
NASA NTRS1984

Radiation tolerance of low resistivity, high voltage silicon solar cells

The radiation tolerance of the following three low resistivity, high voltage silicon solar cells was investigated: (1) the COMSAT MSD (multi-step diffused) cell, (2) the MinMIS cell, and (3) the MIND cell. A description of these solar cells is given along with drawings of their configurations. The diffusion length damage coefficients for the cells were calculated and presented. Solar cell spectral response was also discussed. Cells of the MinMIS type were judged to be unsuitable for use in the space radiation environment.

Weizer, V. G.↗
DOE OSTI2024

Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

Abstract Semiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In particular, GaN has properties that are advantageous for high voltage and high frequency power devices; however, defects in the substrate growth and manufacturing are preventing vertical devices from performing optimally. This paper explores the application of machine learning techniques utilizing data obtained from optical profilometry as input variables to predict the probability of a wafer meeting performance metrics, specifically the breakdown voltage (V bk ). By incorporating machine learning techniques, it is possible to reliably predict performance metrics that cause devices to fail at low voltage. For diodes that fail at a higher (but still below theoretical) breakdown voltage, alternative inspection methods or a combination of several experimental techniques may be necessary.

42 ENGINEERING↗
NASA NTRS1992

A novel antenna for ultra-wide-band applications

An ultrawideband antenna based on a slotline feed structure, a bowtie horn, and a rolled edge termination was developed, analyzed, and measured. Empirical data showed that its beamwidths and bandwidth are dependent on its physical dimensions which are easily controllable by an antenna designer. Measured patterns of models with various radiation properties are shown to substantiate these design rules. A flat plateau-like main beam, low voltage standing-wave ratio (VSWR), the ability to produce both wide (60 deg) and narrow (30 deg) half-power beamwidths, low sidelobes and backlobe (40-50 dB down), low cross-polarized levels (20-25 dB down), and independent control of E- and H-plane beamwidths over an ultrawide bandwidth, say 2-18 GHz, are some of the strong points of this antenna type.

Lai, Albert K. Y.↗
DOE OSTI2026

A Novel Low-Profile High-Efficiency Three-Phase Matrix Transformer

High step-down isolated DC-DC conversion from an 800 V DC bus to low-voltage, high-current outputs is required in automotive auxiliary converters and data center power supplies. In such applications, conventional transformer-based converters require large turns ratios, which increase winding resistance, leakage inductance, and magnetic height. This paper proposes a novel low-profile three-phase matrix transformer that realizes a large effective voltage ratio through flux division among multiple secondary legs, without increasing the physical turns count of each winding. As a result, the proposed structure reduces copper usage and transformer height while preserving the voltage conversion capability of a conventional three-phase transformer. Finite element analysis shows that the proposed design reduces magnetic height by 27%, ferrite volume by 34%, and copper volume by 28%. Circuit-level simulations of an 800 V/12 V,3 kW CLLLC dual-active-bridge converter further show that the lower winding resistance reduces total system loss by 91% and increases DC-DC efficiency from 82.6% to 97.6% at 3 kW output.

Inoue, Shuntaro [ORNL] (ORCID:0000000262637627)↗
DOE OSTI2023

Hybrid Detector (Final Technical Report)

We report updates since the first demonstration of a phonon-mediated silicon detector technology that provides a primary phonon measurement in a low-voltage region, and a simultaneous indirect measurement of the ionization signal through Neganov–Trofimov–Luke amplification in a high voltage region, both in a monolithic crystal. We present characterization of charge and phonon transport between the two stages of the detector and the resulting background discrimination capability at low energies. This new detector technology has the potential to significantly enhance the sensitivity of dark matter and coherent neutrino scattering experiments beyond the capabilities of current technologies that have limited discrimination at low energies.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS2006

Evolution and Control of 2219 Aluminum Microstructural Features Through Electron Beam Freeform Fabrication

The layer-additive nature of the electron beam freeform fabrication (EBF3) process results in a tortuous thermal path producing complex microstructures including: small homogeneous equiaxed grains; dendritic growth contained within larger grains; and/or pervasive dendritic formation in the interpass regions of the deposits. Several process control variables contribute to the formation of these different microstructures, including translation speed, wire feed rate, beam current and accelerating voltage. In electron beam processing, higher accelerating voltages embed the energy deeper below the surface of the substrate. Two EBF3 systems have been established at NASA Langley, one with a low-voltage (10-30kV) and the other a high-voltage (30-60 kV) electron beam gun. Aluminum alloy 2219 was processed over a range of different variables to explore the design space and correlate the resultant microstructures with the processing parameters. This report is specifically exploring the impact of accelerating voltage. Of particular interest is correlating energy to the resultant material characteristics to determine the potential of achieving microstructural control through precise management of the heat flux and cooling rates during deposition.

Taminger, Karen M.↗
NASA NTRS2006

Evolution and Control of 2219 Aluminum Microstructural Features through Electron Beam Freeform Fabrication

Electron beam freeform fabrication (EBF3) is a new layer-additive process that has been developed for near-net shape fabrication of complex structures. EBF3 uses an electron beam to create a molten pool on the surface of a substrate. Wire is fed into the molten pool and the part translated with respect to the beam to build up a 3-dimensional structure one layer at a time. Unlike many other freeform fabrication processes, the energy coupling of the electron beam is extremely well suited to processing of aluminum alloys. The layer-additive nature of the EBF3 process results in a tortuous thermal path producing complex microstructures including: small homogeneous equiaxed grains; dendritic growth contained within larger grains; and/or pervasive dendritic formation in the interpass regions of the deposits. Several process control variables contribute to the formation of these different microstructures, including translation speed, wire feed rate, beam current and accelerating voltage. In electron beam processing, higher accelerating voltages embed the energy deeper below the surface of the substrate. Two EBF3 systems have been established at NASA Langley, one with a low-voltage (10-30kV) and the other a high-voltage (30-60 kV) electron beam gun. Aluminum alloy 2219 was processed over a range of different variables to explore the design space and correlate the resultant microstructures with the processing parameters. This report is specifically exploring the impact of accelerating voltage. Of particular interest is correlating energy to the resultant material characteristics to determine the potential of achieving microstructural control through precise management of the heat flux and cooling rates during deposition.

Taminger, Karen M.↗
NASA NTRS2011

CMOS Imager Has Better Cross-Talk and Full-Well Performance

A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.

Pain, Bedabrata↗
DOE OSTI2020

Smart-DS: Synthetic Models for Advanced, Realistic Testing: Distribution Systems and Scenarios

The explosion of new ideas for distributed energy resources and advanced distribution grid algorithms faces a critical challenge: how can one effectively develop and evaluate these breakthrough technologies without an adequate set of power systems network, load, and resource data to test against? Today's open test systems, particularly for distribution systems, are tiny and incomplete; and though with enough effort, obtaining utility data under NDA can overcome scale challenges, the results can't be openly shared, preventing fair comparison. The Smart-DS project-led by NREL in partnership with MIT, Universidad Pontificia Comillas, CYME, and EDD-is working to overcome this gap by generating multiple large-scale, open, synthetic, distribution systems that are realistic but not real. These datasets go beyond a single medium voltage feeder (~1000 customers) to cover entire metropolitan areas and their surrounds with up to hundreds of feeders and millions of customers, complete with low voltage customer connections and high voltage sub-transmission. This scale allows adequate testing and analysis of not just local controls and advanced DERs, but also multiple substation interactions, optimized switching, full-scale distribution-OPF, and more. To accompany these datasets, the project is also building a rich set of scenario generation tools that can be used for distribution and transmission systems alike. This includes automated, spatially aware access to world-class, high-resolution solar, wind, and weather data: forward looking generation mixes: and highly configurable DER, load, climate, outage, control-scheme, and other scenarios. We will also highlight DiTTo, an exciting open-source, multi-way distribution dataset transformation tool for many-to-many format translation with scenario, merge/split, and many other manipulation capabilities.

DERs↗
NASA NTRS1988

Analysis of pre-flight modulator voltage calibration data for the Voyager plasma science experiment

The Voyager Plasma Science (PLS) modulator calibration (MVM) data analysis was undertaken in order to check the correctness of the fast A/D converter formulas that connect low voltage monitor signals (MV) with digital outputs (DN), to determine the proportionality constants between the actual modulator grid potential (V) and the monitor voltage (MV), and to establish an algorithm to link the digitized readouts (DN) with the actual grid potential (V). The analysis results are surprising in that the derived conversion constants deviate by fairly significant amounts from their nominal values. However, it must be kept in mind that the test results which were used for analysis may be very imprecise. Even if it is assumed that the test result errors are very large, they do no appear to be capable to account for all discrepancies between the theoretical expectations and the results of the analysis. Measurements with the flight spare instrument appear to be the only means of investigating these effects further.

Nastov, Ognen↗
DOE OSTI2020

Simulating dispatchable grid services provided by flexible building loads: State of the art and needed building energy modeling improvements

End-use electrical loads in residential and commercial buildings are evolving into flexible and cost-effective resources to improve electric grid reliability, reduce costs, and support increased hosting of distributed renewable generation. This article reviews the simulation of utility services delivered by buildings for the purpose of electric grid operational modeling. We consider services delivered to (1) the high-voltage bulk power system through the coordinated action of many, distributed building loads working together, and (2) targeted support provided to the operation of low-voltage electric distribution grids. Although an exhaustive exploration is not possible, we emphasize the ancillary services and voltage management buildings can provide and summarize the gaps in our ability to simulate them with traditional building energy modeling (BEM) tools, suggesting pathways for future research and development.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

Intelligent, grid-friendly, modular extreme fast charging system with solid-state DC protection

The development of electric vehicle (EV) charging infrastructure is crucial for the widespread adoption of electric transportation. However, implementing such infrastructure is a complex task that requires consideration of factors such as space limitations, adherence to industry standards, grid capacity, and other technical and policy issues. This project seeks to create a framework for the efficient design of compact medium voltage (MV) extreme fast charging (XFC) stations for EVs. The station design involves the use of a solid-state transformer (SST) that connects to the MV distribution network, delivering power to a shared DC bus. This innovative approach eliminates the need for a step-down transformer to provide low-voltage service by connecting directly to the MV distribution network. Eliminating the low-frequency transformer not only reduces the system footprint and losses but also eliminates inrush currents during grid black-start. Additionally, placing power electronics directly on the distribution system allows for high-bandwidth filtering and power factor correction. The inclusion of a shared DC bus enables multiple charging dispensers and DC storage/generation units to connect, forming a DC microgrid. This setup facilitates power sharing with minimal conversion stages. The project showcases a DC distribution network protected by intelligent solid-state (SS) DC circuit breakers (DCCB) capable of isolating the smallest section of the faulted circuit much faster than existing mechanical solutions.

24 POWER TRANSMISSION AND DISTRIBUTION↗