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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Lifetime of inner-shell hole states of Ar (2p) and Kr (3d) using equation-of-motion coupled cluster method

Auger decay is an efficient ultrafast relaxation process of core-shell or inner-shell excited atom or molecule. Generally, it occurs in femto-second or even atto-second time domain. Direct measurement of lifetimes of Auger process of single ionized and double ionized inner-shell state of an atom or molecule is an extremely difficult task. In this paper, we have applied the highly correlated complex absorbing potential-equation-of-motion coupled cluster (CAP-EOMCC) approach which is a combination of CAP and EOMCC approach to calculate the lifetime of the states arising from 2p inner-shell ionization of an Ar atom and 3d inner-shell ionization of Kr atom. We have also calculated the lifetime of Ar{sup 2+}(2p{sup −1}3p{sup −1}) {sup 1}D, Ar{sup 2+}(2p{sup −1}3p{sup −1}) {sup 1}S, and Ar{sup 2+}(2p{sup −1}3s{sup −1}) {sup 1}P double ionized states. The predicted results are compared with the other theoretical results as well as experimental results available in the literature.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In{sub 0.53}Ga{sub 0.47}As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Probing electronic lifetimes and phonon anharmonicities in high-quality chemical vapor deposited graphene by magneto-Raman spectroscopy

We present a magneto-Raman study on high-quality single-layer graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride by a dry transfer technique. By analyzing the Raman D, G, and 2D peaks, we find that the structural quality of the samples is comparable with state-of-the-art exfoliated graphene flakes. From B-field dependent Raman measurements, we extract the broadening and associated lifetime of the G peak due to anharmonic effects. Furthermore, we determine the decay width and lifetime of Landau level (LL) transitions from magneto-phonon resonances as a function of laser power. At low laser power, we find a minimal decay width of 140 cm{sup −1} highlighting the high electronic quality of the CVD-grown graphene. At higher laser power, we observe an increase of the LL decay width leading to a saturation, with the corresponding lifetime saturating at a minimal value of 18 fs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Determination of deep trapping lifetime in organic semiconductors using impedance spectroscopy

A method for determining deep trapping lifetime in semiconductors using an impedance spectroscopy is proposed. A unique feature of the method is the simultaneous determination of the drift mobility and deep trapping lifetime in thin-film electronic devices. The validity of the proposed method is examined by numerical calculation. Simultaneous determinations of the drift mobility and deep trapping lifetime using this method are demonstrated in prototypical hole transporting organic semiconductors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Combined fluorescence and phosphorescence lifetime imaging

We present a lifetime imaging technique that simultaneously records the fluorescence and phosphorescence lifetime images in confocal laser scanning systems. It is based on modulating a high-frequency pulsed laser synchronously with the pixel clock of the scanner, and recording the fluorescence and phosphorescence signals by multidimensional time-correlated single photon counting board. We demonstrate our technique on the recording of the fluorescence/phosphorescence lifetime images of human embryonic kidney cells at different environmental conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Numerical study of the intrinsic recombination carriers lifetime in extended short-wavelength infrared detector materials: A comparison between InGaAs and HgCdTe

Intrinsic carrier lifetime due to radiative and Auger recombination in HgCdTe and strained InGaAs has been computed in the extended short-wavelength infrared (ESWIR) spectrum from 1.7 μm to 2.7 μm. Using the Green's function theory, both direct and phonon-assisted indirect Auger recombination rates as well as the radiative recombination rates are calculated for different cutoff wavelengths at 300 K with full band structures of the materials. In order to properly model the full band structures of strained InGaAs, an empirical pseudo-potential model for the alloy is fitted using the virtual crystal approximation with spin-orbit coupling included. The results showed that for In{sub x}Ga{sub 1−x}As grown on InP substrate, the compressive strain, which presents in the film when the cutoff wavelength is longer than 1.7 μm, leads to decrease of Auger recombination rate and increase of radiative recombination rate. Since the dominant intrinsic recombination mechanism in this spectral range is radiative recombination, the overall intrinsic carrier lifetime in the strained InGaAs alloys is shorter than that in the relaxed material. When compared to the relaxed HgCdTe, both relaxed and compressively strained InGaAs alloys show shorter intrinsic carrier lifetime at the same cutoff wavelength in room temperature which confirms the potential advantage of HgCdTe as wide-band infrared detector material. While HgCdTe offers superior performance, ultimately the material of choice for ESWIR application will also depend on material quality and cost.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

An application of characteristic function in order to predict reliability and lifetime of aeronautical hardware

The forecasting of reliability and life of aeronautical hardware requires recognition of many and various destructive processes that deteriorate the health/maintenance status thereof. The aging of technical components of aircraft as an armament system proves of outstanding significance to reliability and safety of the whole system. The aging process is usually induced by many and various factors, just to mention mechanical, biological, climatic, or chemical ones. The aging is an irreversible process and considerably affects (i.e. reduces) reliability and lifetime of aeronautical equipment. Application of the characteristic function of the aging process is suggested to predict reliability and lifetime of aeronautical hardware. An increment in values of diagnostic parameters is introduced to formulate then, using the characteristic function and after some rearrangements, the partial differential equation. An analytical dependence for the characteristic function of the aging process is a solution to this equation. With the inverse transformation applied, the density function of the aging of aeronautical hardware is found. Having found the density function, one can determine the aeronautical equipment’s reliability and lifetime. The in-service collected or the life tests delivered data are used to attain this goal. Coefficients in this relationship are found using the likelihood function.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2015

DUST DESTRUCTION RATES AND LIFETIMES IN THE MAGELLANIC CLOUDS

The dust budget in galaxies depends on the rate at which dust grains are created in different stellar sources and destroyed by interstellar shocks. Because of their extensive wavelength coverage, proximity, and nearly face-on geometry, the Magellanic Clouds (MCs) provide a unique opportunity to study these processes in great detail. In this paper, we use the complete sample of supernova remnants (SNRs) in the MCs to calculate the lifetimes and destruction efficiencies of silicate and carbon dust. We find dust lifetimes of 22 ± 13 Myr (30 ± 17 Myr) for silicate (carbon) grains in the LMC, and 54 ± 32 Myr (72 ± 43 Myr) for silicate (carbon) grains in the SMC. The corresponding dust destruction rates are 2.3 × 10{sup –2} M {sub ☉} yr{sup –1} (5.9 × 10{sup –3} M {sub ☉} yr{sup –1}) and 3.0 × 10{sup –3} M {sub ☉} yr{sup –1} (5.6 × 10{sup –4} M {sub ☉} yr{sup –1}) for silicate (carbon) grains in the LMC and SMC, respectively. The significantly shorter lifetimes in the MCs, as compared to the Milky Way, are explained as the combined effect of their lower total dust mass and preferentially higher dust-to-gas (D2G) mass ratios in the vicinity of the SNRs. We find that the maximum dust injection rates by asymptotic giant branch stars and core collapse supernovae are an order of magnitude lower than the dust destruction rates by the SNRs, suggesting that most of the dust may be reconstituted in dense molecular clouds. We also discuss the dependence of the dust destruction rate on the local D2G mass ratio, ambient gas density, and metallicity, as well as the application of our results to other galaxies and dust evolution models.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2014

TR-LIF LIFETIME MEASUREMENTS AND HFR+CPOL CALCULATIONS OF RADIATIVE PARAMETERS IN VANADIUM ATOM (V I)

Radiative lifetimes of 79 levels belonging to the 3d {sup 3}4s4p, 3d {sup 4}4p, 3d {sup 3}4s5p, 3d {sup 4}5p, and 3d {sup 3}4s4d configurations of V I with energy from 26,604.807 to 46,862.786 cm{sup –1} have been measured using time-resolved laser-induced fluorescence (TR-LIF) spectroscopy in laser-produced plasma. The lifetime values reported in this paper are in the range of 3.3-494 ns, and the uncertainties of these measurements are within ±10%. A good agreement was obtained with previous data. HFR+CPOL calculations have been performed and used to combine the calculated branching fractions with the available experimental lifetimes to determine semi-empirical transition probabilities for 784 V I transitions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

The role of defect charge, crystal chemistry, and crystal structure on positron lifetimes of vacancies in oxides

Density functional theory based positron lifetime (PL) calculations for cation and oxygen monovacancies in a range of oxides—hematite, magnetite, hercynite, and alumina—have been conducted to compare the impact of defect chemistry and crystal structure on the predicted lifetimes. The role of defect charge state has also been examined. A comparison across the same type of crystalline structure but different composition shows that oxygen vacancies only induce a slight increase in the positron-electron overlap and thus barely modify the PL as compared to the bulk. A much more substantial increase of PL is observed for cation monovacancies, regardless of crystal structure or the elemental nature of the vacancy, which we ascribe to an enhanced localization of charge density around the vacant site. The structural and compositional richness of the oxide leads to longer defect PLs, with defected hercynite exhibiting the longest PLs. The charge state of cation monovacancies modifies only by a small percentage the positron localization, relegating to secondary importance the metal defect's oxidation state in modifying the lifetime of positrons within vacancy traps.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Excited state lifetime modulation in semiconductor nanocrystals for super-resolution imaging

Abstract We report on proof of principle measurements of a concept for a super-resolution imaging method that is based on excitation field density-dependent lifetime modulation of semiconductor nanocrystals. The prerequisite of the technique is access to semiconductor nanocrystals with emission lifetimes that depend on the excitation intensity. Experimentally, the method requires a confocal microscope with fluorescence-lifetime measurement capability that makes it easily accessible to a broad optical imaging community. We demonstrate with single particle imaging that the method allows one to achieve a spatial resolution of the order of several tens of nanometers at moderate fluorescence excitation intensity.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Strongest model-independent bound on the lifetime of Dark Matter

Dark Matter is essential for structure formation in the late Universe so it must be stable on cosmological time scales. But how stable exactly? Only assuming decays into relativistic particles, we report an otherwise model independent bound on the lifetime of Dark Matter using current cosmological data. Since these decays affect only the low ℓ multipoles of the CMB, the Dark Matter lifetime is expected to correlate with the tensor-to-scalar ratio r as well as the curvature Ω{sub k}. We consider two models, including r and r+Ω{sub k} respectively, versus data from Planck, WMAP, WiggleZ and Baryon Acoustic Oscillations, with or without the BICEP2 data (if interpreted in terms of primordial gravitational waves). This results in a lower bound on the lifetime of CDM given by 160 Gyr (without BICEP2) or 200 Gyr (with BICEP2) at 95% confidence level.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2024

Proton and neutron contributions to the quadrupole transition strengths in 39 Ca and 39 K studied by lifetime measurements of mirror transitions

The E2 transition matrix elements of isobaric multiplets are expected to follow a linear trend as a function of isospin projection. However, measurements of the 2 + → 0 + transitions in the A = 38 triplet of Ca, K, and Ar show a deviation from this trend with an enhanced transition strength in 38 Ca with respect to its mirror 38 Ar. We have studied analogue 11/2 – → 7/2 – E2 transitions in 39 Ca and its mirror partner 39 K to determine if this enhancement persists in neighboring Ca isotopes. Recoil-distance lifetime measurements of 39 Ca and 39 K were performed utilizing a 42 Sc secondary beam, the TRIPLEX plunger, the GRETINA array, and the S800 spectrograph. Our data provide a lifetime measurement of the (11/2 – ) state in 39 Ca as well as an improved lifetime result for the (9/2 – ) state, while the 39 K data are used to validate the present analysis. Furthermore, a comparison of the present data to shell-model calculations suggests an enhanced transition strength in 39 Ca, pointing to both proton and neutron contributions to core excitations across the Z = N = 20 shell gaps in close proximity to 40 Ca.

39 ≤ A ≤ 58↗
DOE OSTI2021

Improved Neutron Lifetime Measurement with UCN$\tau$

In this work, we report an improved measurement of the free neutron lifetime $\tau_n$ using the UCN$\tau$ apparatus at the Los Alamos Neutron Science Center. We count a total of approximately 38×10 6 surviving ultracold neutrons (UCNs) after storing in UCN$\tau$’s magnetogravitational trap over two data acquisition campaigns in 2017 and 2018. We extract $\tau$ n from three blinded, independent analyses by both pairing long and short storage time runs to find a set of replicate $\tau$ n measurements and by performing a global likelihood fit to all data while self-consistently incorporating the β-decay lifetime. Both techniques achieve consistent results and find a value $\tau$ n =877.75±0.28 stat +0.22/–0.16 syst s. With this sensitivity, neutron lifetime experiments now directly address the impact of recent refinements in our understanding of the standard model for neutron decay.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2017

Superacid-Treated Silicon Surfaces: Extending the Limit of Carrier Lifetime for Photovoltaic Applications

Minimizing carrier recombination at interfaces is of extreme importance in the development of high-efficiency photovoltaic devices and for bulk material characterization. Here, we investigate a temporary room temperature superacid-based passivation scheme, which provides surface recombination velocities below 1 cm/s, thus placing our passivation scheme amongst state-of-the-art dielectric films. Application of the technique to high-quality float-zone silicon allows the currently accepted intrinsic carrier lifetime limit to be reached and calls its current parameterization into doubt for 1 Ω·cm n-type wafers. The passivation also enables lifetimes up to 65 ms to be measured in high-resistivity Czochralski silicon, which, to our knowledge, is the highest ever measured in Czochralski-grown material. The passivation strategies developed in this work will help diagnose bulk lifetime degradation under solar cell processing conditions and also help quantify the electronic quality of new passivation schemes.

42 ENGINEERING↗
DOE OSTI2018

Influence of CdTe Deposition Temperature and Window Thickness on CdTe Grain Size and Lifetime After CdCl 2 Recrystallization

Grain structure influences both transport and recombination in CdTe solar cells. Larger grains generally are obtained with higher deposition temperatures, but commercially it is important to avoid softening soda-lime glass. Furthermore, depositing at lower temperatures can enable different substrates and reduced cost in the future. We examine how initial deposition temperatures and morphology influence grain size and lifetime after CdCl 2 recrystallization. Techniques are developed to estimate grain distribution quickly with low-cost optical microscopy, which compares well with electron backscatter diffraction data providing corroborative assessments of exposed CdTe grain structures. Average grain size increases as a function of CdCl 2 temperature. For lower temperature close-spaced sublimation CdTe depositions, there can be more stress and grain segregation during recrystallization. However, the resulting lifetimes and grain sizes are similar to high-temperature CdTe depositions. The grain structures and lifetimes are largely independent of the presence and/or interdiffusion of Se at the interface, before and after the CdCl 2 treatment.

14 SOLAR ENERGY↗
DOE OSTI2015

Using Minority Carrier Lifetime Measurement to Determine Saw Damage Characteristics on Si Wafer Surfaces

The damage on the Si wafer surfaces, caused by ingot cutting, is determined from measurement of minority carrier lifetime (..tau..eff). Samples are sequentially etched to remove thin layers from each surface and lifetime is measured after each etch step. The thickness-removed at which the lifetime reaches a peak value corresponds to the damage depth. This technique also allows the depth distribution of the damage to be quantified in terms of surface recombination velocity (SRV). An accurate measurement of ..tau..eff requires corrections to optical reflection, and transmission to account for changes in the surface morphology and in the wafer thickness.

14 SOLAR ENERGY↗
DOE OSTI2020

Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices

We study the photocarrier lifetime evolution of n-Cz Si material throughout the processing sequence for polycrystalline passivated contact devices. We show that a high temperature annealing pretreatment (known as Tabula Rasa) has a clear effect on enhancing bulk lifetimes of n-Cz Si. We further this development by integrating such defect engineering into the lower-temperature annealing of passivated contact. By applying oxidizing ambient gases during these anneals we report a photocarrier lifetime enhancement over an N 2 environment. This enhancement is exhibited in a 1-sun iV OC of 735 mV when annealed in O 2 rather than 708 mV in N 2.

14 SOLAR ENERGY↗