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At least 343 records · Page 19

Resonant electromagnetic scattering in anisotropic layered media

The resonant excitation of an electromagnetic guided mode of a slab structure by exterior radiation results in anomalous scattering behavior, including sharp energy-transmission anomalies and field amplification around the frequency of the slab mode. In the case of a periodically layered ambient medium, anisotropy serves to couple the slab mode to radiation. Exact expressions for scattering phenomena are proved by analyzing a pole of the full scattering matrix as it moves off the real frequency axis into the lower half complex plane under a detuning of the wavevector parallel to the slab. The real pole is the frequency of a perfect (infinite Q) guided mode, which becomes lossy as the frequency gains an imaginary part. This work extends results of Shipman and Venakides to evanescent source fields and two-dimensional parallel wavevector and demonstrates by example how the latter allows one to control independently the width and central frequency of a resonance by varying the angle of incidence of the source field. The analysis relies on two nondegeneracy conditions of the complex dispersion relation for slab modes (relating poles of the scattering matrix to wavevector), which were assumed in previous works and are proved in this work for layered media. One of them asserts that the dispersion relation near the wavevector κ and frequency ω of a perfect guided mode is the zero set of a simple eigenvalue ℓ(κ, ω), and the other relates ∂ℓ/∂ω to the total energy of the mode, thereby implying that this derivative is nonzero.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

L{sub g} = 100 nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100 mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/μm, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7 nm technology node and/or beyond.

36 MATERIALS SCIENCE↗

Single layer graphene protective layer on GaAs photocathodes for spin-polarized electron source

GaAs-based photocathodes are the primary choice for polarized electron sources, commonly used in polarized electron microscopes and polarized positron sources. GaAs photocathodes are typically activated with cesium and oxygen, which are highly reactive and require an ultra-high vacuum (⁠~ 10 -11 Torr or lower) to operate reliably, resulting in substantial operational difficulties. A short exposure to a mediocre vacuum results in an instantaneous loss of cathode quantum efficiency (QE) due to the chemical reaction of the active layer with residual gas molecules or back-bombardment ions during operation. Covering the GaAs cathode with a 2D material, such as monolayer graphene, could provide protection against such damage due to the inhibition of chemical reactions with residual gas molecules. In this paper, we have incorporated a method known as intercalation to pass the active material underneath the graphene and activate the superlattice GaAs/GaAsP (SL-GaAs) photocathode. X-ray photoelectron spectroscopy, low-energy electron microscopy, and Mott scattering measurements were performed to evaluate the formation of the photocathode under graphene, as well as its spectral response and electron spin polarization. Our results demonstrate that the successful activation of the SL-GaAs photocathode with a graphene protection layer is achieved with a moderate QE. Furthermore, we found that the electron spin polarization of the cathode with a surface protection layer is higher than the conventional cathode without a protection layer.

2D materials↗

Structural and thermodynamic limits of layer thickness in 2D halide perovskites

In the fast-evolving field of halide perovskite semiconductors, the 2D perovskites (A') 2 (A) n -1 M n X 3 n +1 [where A = Cs + , CH 3 NH 3 + , HC(NH 2 ) 2 + ; A' = ammonium cation acting as spacer; M = Ge 2+ , Sn 2+ , Pb 2+ ; and X = Cl - , Br - , I - ] have recently made a critical entry. The n value defines the thickness of the 2D layers, which controls the optical and electronic properties. The 2D perovskites have demonstrated preliminary optoelectronic device lifetime superior to their 3D counterparts. They have also attracted fundamental interest as solution-processed quantum wells with structural and physical properties tunable via chemical composition, notably by the n value defining the perovskite layer thickness. The higher members ( n > 5) have not been documented, and there are important scientific questions underlying fundamental limits for n . To develop and utilize these materials in technology, it is imperative to understand their thermodynamic stability, fundamental synthetic limitations, and the derived structure–function relationships. We report the effective synthesis of the highest iodide n -members yet, namely (CH 3 (CH 2 ) 2 NH 3 ) 2 (CH 3 NH 3 ) 5 Pb 6 I 19 ( n = 6) and (CH 3 (CH 2 ) 2 NH 3 ) 2 (CH 3 NH 3 ) 6 Pb 7 I 22 ( n = 7), and confirm the crystal structure with single-crystal X-ray diffraction, and provide indirect evidence for “(CH 3 (CH 2 ) 2 NH 3 ) 2 (CH 3 NH 3 ) 8 Pb 9 I 28 ” (“ n = 9”). Direct HCl solution calorimetric measurements show the compounds with n > 7 have unfavorable enthalpies of formation (Δ H f ), suggesting the formation of higher homologs to be challenging. Finally, we report preliminary n -dependent solar cell efficiency in the range of 9–12.6% in these higher n -members, highlighting the strong promise of these materials for high-performance devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Short O–O separation in layered oxide Na 0.67 CoO 2 enables an ultrafast oxygen evolution reaction

The layered oxide Na 0.67 CoO 2 with Na + occupying trigonal prismatic sites between CoO 2 layers exhibits a remarkably high room temperature oxygen evolution reaction (OER) activity in alkaline solution. The high activity is attributed to an unusually short O–O separation that favors formation of peroxide ions by O - –O – interactions followed by O 2 evolution in preference to the conventional route through surface O–OH – species. The dependence of the onset potential on the pH of the alkaline solution was found to be consistent with the loss of H + ions from the surface oxygen to provide surface O - that may either be attacked by solution OH - or react with another O - ; a short O–O separation favors the latter route. The role of a strong hybridization of the O-2 p and low-spin Co III /Co IV π-bonding d states is also important; the OER on other Co III /Co IV oxides is compared with that on Na 0.67 CoO 2 as well as that on IrO 2 .

Wang, Hao↗

Production and integration of the ATLAS Insertable B-Layer

During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realized following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. Furthermore, this paper reports on the IBL construction and integration prior to its operation in the ATLAS detector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

HST ROTATIONAL SPECTRAL MAPPING OF TWO L-TYPE BROWN DWARFS: VARIABILITY IN AND OUT OF WATER BANDS INDICATES HIGH-ALTITUDE HAZE LAYERS

We present time-resolved near-infrared spectroscopy of two L5 dwarfs, 2MASS J18212815+1414010 and 2MASS J15074759–1627386, observed with the Wide Field Camera 3 instrument on the Hubble Space Telescope (HST). We study the wavelength dependence of rotation-modulated flux variations between 1.1 μm and 1.7 μm. We find that the water absorption bands of the two L5 dwarfs at 1.15 μm and 1.4 μm vary at similar amplitudes as the adjacent continuum. This differs from the results of previous HST observations of L/T transition dwarfs, in which the water absorption at 1.4 μm displays variations of about half of the amplitude at other wavelengths. We find that the relative amplitude of flux variability out of the water band with respect to that in the water band shows a increasing trend from the L5 dwarfs toward the early T dwarfs. We utilize the models of Saumon and Marley and find that the observed variability of the L5 dwarfs can be explained by the presence of spatially varying high-altitude haze layers above the condensate clouds. Therefore, our observations show that the heterogeneity of haze layers—the driver of the variability—must be located at very low pressures, where even the water opacity is negligible. In the near future, the rotational spectral mapping technique could be utilized for other atomic and molecular species to probe different pressure levels in the atmospheres of brown dwarfs and exoplanets and uncover both horizontal and vertical cloud structures.

79 ASTRONOMY AND ASTROPHYSICS↗

Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB 2

Using low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM), we observe a new two-dimensional (2D) silicon crystal that is formed by depositing additional Si atoms onto spontaneously-formed epitaxial silicene on a ZrB2 thin film. From scanning tunnelling spectroscopy (STS) studies, we find that this atomically-thin layered silicon has distinctly different electronic properties. Angle resolved photoelectron spectroscopy (ARPES) reveals that, in sharp contrast to epitaxial silicene, the layered silicon exhibits significantly enhanced density of states at the Fermi level resulting from newly formed metallic bands. The 2D growth of this material could allow for direct contacting to the silicene surface and demonstrates the dramatic changes in electronic structure that can occur by the addition of even a single monolayer amount of material in 2D systems.

36 MATERIALS SCIENCE↗

Layer-by-layer assembly of patchy particles as a route to nontrivial structures

Here, we propose a strategy for robust high-quality self-assembly of nontrivial periodic structures out of patchy particles and investigate it with Brownian dynamics simulations. Its first element is the use of specific patch-patch and shell-shell interactions between the particles, which can be implemented through differential functionalization of patched and shell regions with specific DNA strands. The other key element of our approach is the use of a layer-by-layer protocol that allows one to avoid the formation of undesired random aggregates. As an example, we design and self-assemble in silico a version of a double diamond lattice in which four particle types are arranged into bcc crystal made of four fcc sublattices. The lattice can be further converted to cubic diamond by selective removal of the particles of certain types. These results demonstrate that by combining the directionality, selectivity of interactions, and the layer-by-layer protocol, a high-quality robust self-assembly can be achieved.

36 MATERIALS SCIENCE↗

Role of the PbTiO 3 Seed Layer on the Crystallization Behavior of PZT Thin Films

The role of a highly crystalline and oriented lead titanate ( PTO ) seed layer on the subsequent phase and texture evolution of lead zirconate titanate ( PZT ) thin films is investigated in situ using X‐ray diffraction ( XRD ) during crystallization. Crystalline PTO seed layers were first prepared via a 2‐methoxyethanol route. Amorphous PZT with a Zr/Ti ratio of 52/48 was then deposited on the seed layer using the same synthesis route and subsequently crystallized in situ during XRD . During heating, a tetragonal‐to‐cubic transformation of the seed layer occurs prior to the formation of perovskite PZT . Subsequent nucleation of the crystalline PZT occurs in the cubic phase. Simultaneous to nucleation of PZT , development of a dominant 100 texture component was observed in the PZT phase of the thin films. The results indicate that 100 textured PTO nucleates 100 texture of PZT thin films during crystallization.

Mhin, Sungwook↗

Formation of nickel germanides from Ni layers with thickness below 10 nm

The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex situ x-ray pole figure analyses for phase identification. The observed sequential growth of Ni5Ge3Ni5Ge3 and NiGe with such thin Ni layers is different from the previously reported simultaneous growth with thicker Ni layers. The phase transformation from Ni5Ge3Ni5Ge3 to NiGe was found to be nucleation-controlled for Ni thicknesses <5 nm<5 nm, which is well supported by thermodynamic considerations. Specifically, the temperature for the NiGe formation increased with decreasing Ni (rather Ni5Ge3Ni5Ge3) thickness below 5 nm. In combination with sheet resistance measurement and microscopic surface inspection of samples annealed with a standard rapid thermal processing, the temperature range for achieving morphologically stable NiGe layers was identified for this standard annealing process. As expected, it was found to be strongly dependent on the initial Ni thickness

36 MATERIALS SCIENCE↗

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.

36 MATERIALS SCIENCE↗

Designing optical metamaterial with hyperbolic dispersion based on Al:ZnO/ZnO nano-layered structure using Atomic Layer Deposition technique

In this study, nano-layered Al:ZnO/ZnO hyperbolic dispersion metamaterial with a large number of layers was fabricated using the atomic layer deposition (ALD) technique. Experimental dielectric functions for Al:ZnO/ZnO structures are obtained by an ellipsometry technique in the visible and near-infrared spectral ranges. The theoretical modeling of the Al:ZnO/ZnO dielectric permittivity is done using effective medium approximation. A method for analysis of spectroscopic ellipsometry data is demonstrated to extract the optical permittivity for this highly anisotropic nano-layered metamaterial. The results of the ellipsometry analysis show that Al:ZnO/ZnO structures with a 1:9 ALD cycle ratio exhibit hyperbolic dispersion transition change near 1.8 μm wavelength.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Computation and Comparison of the Stable Northeastern US Marine Boundary Layer

In this work we investigate the behavior of stable marine boundary layers located near the coast of the Northeastern United States. Using the ExaWind large eddy simulation (LES) codes, three stable atmospheric conditions were chosen to match the Cape Wind measurements of Archer et al. with wind speeds of 5 m/s, 10 m/s, and 15 m/s at the 20 m measurement height. The behavior of the stable boundary layers, including mean flow quantities and turbulent statistics, are examined and compared to previous computations of the neutral and unstable offshore boundary layer at the same location. This study also examines the domain and mesh requirements necessary to capture the turbulent scales for the stable offshore boundary layers. Finally, we compare solutions computed using both Nalu-Wind and AMR-Wind solvers, and compare their predicted solutions and performance in this study.

49 EE - Wind and Water Power Program - Wind (EE-4W↗

Joint retrievals of cloud and drizzle in marine boundary layer clouds using ground-based radar, lidar and zenith radiances

Active remote sensing of marine boundary-layer clouds is challenging as drizzle drops often dominate the observed radar reflectivity. We present a new method to simultaneously retrieve cloud and drizzle vertical profiles in drizzling boundary-layer clouds using surface-based observations of radar reflectivity, lidar attenuated backscatter, and zenith radiances under conditions when precipitation does not reach the surface. Specifically, the vertical structure of droplet size and water content of both cloud and drizzle is characterised throughout the cloud. An ensemble optimal estimation approach provides full error statistics given the uncertainty in the observations. To evaluate the new method, we first perform retrievals using synthetic measurements from large-eddy simulation snapshots of cumulus under stratocumulus, where cloud water path is retrieved with an error of 31 g m -2 . The method also performs well in non-drizzling clouds where no assumption of the cloud profile is required. We then apply the method to observations of marine stratocumulus obtained during the Atmospheric Radiation Measurement MAGIC deployment in the Northeast Pacific. Here, retrieved cloud water path agrees well with independent three-channel microwave radiometer retrievals, with a root mean square difference of 10–20 g m -2 .

54 ENVIRONMENTAL SCIENCES↗

Comparison of solutions to boundary-layer and Navier-Stokes equations for the case of mass removal from a turbulent boundary layer

Comparisons are made over a range of Mach numbers from 1.5 to 7.5 at a fixed Reynolds number for various amounts of mass removal (boundary-layer bleed). Results indicate that boundary-layer theory can be used for design purposes in the range of bleed rates required to eliminate separation in an isolated, strong, adverse pressure gradient. Only about 5% to 10% of the boundary-layer mass flow must be removed to prevent such separations. Direct comparisons of bleed rates required to eliminate separation predicted by boundary-layer and Navier-Stokes equations for an M = 3.5-engine inlet centerbody show comparable results.

Rose, W. C.↗