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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

High temperature gallium phosphide rectifiers

Development of high reverse breakdown voltage and low forward voltage drop stability in high power Schottky GaP rectifier for high temperature application is reported.

Craford, M. G.↗
NASA NTRS1972

Development of ion implanted gallium arsenide transistors

Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.

Hunsperger, R.↗
NASA NTRS1972

Development of high temperature gallium phosphide rectifiers

Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C.

Craford, M. G.↗
NASA NTRS1972

A study of the electrical properties of p-n junctions formed by ion-implantation into gallium arsenide

In the process of ion implantation, ion beams bombard the surface and create undesirable surface effects. The surface effects were investigated, and surface leakage currents were shown to be reduced by surface treatment. I-V characteristics and C-V measurements were obtained for the Zn-GaAs and Zn-(In,Ga)As junction is considered as a p-i-n heterojunction, without generation-recombination current. The Zn-GaAs junction is considered as a p-n homojunction with appreciable generation-recombination currents.

Lin, A. H.↗
NASA NTRS1973

Gallium and germanium in the metal and silicates of L- and LL-chondrites.

Concentrations of Ga and Ge in the metal of 31 L-, 8 LL- and 2 H-chondrites, and in the silicates of 12 L- and LL-chondrites have been determined by spectrophotometric methods. The ranges of Ga contents in the metal of L- and LL-chondrites are 1.1 to 36.9 ppm and 1.0 to 34.1 ppm, respectively. The Ge content in the metal is positively correlated with Ga and ranges from 89.1 to 160 ppm and from 126 to 308 ppm for L- and LL-chondrites, respectively. The Ga content in the silicates of L-chondrites varies from 4.0 to 8.9 ppm. The Ga and Ge contents in the metal are clearly lower in unequilibrated than in equilibrated L- and LL-group chondrites. Unequilibrated and equilibrated chondrites are well separated in the plots of Ga vs Ge in the metal, and the L- and LL-groups are also well resolved. The Ga and Ge in the metal are well correlated with petrologic grade. This suggests that Ga and Ge variations in the metal are related to thermal metamorphism. There is evidence of an enrichment of Ga in the metal due to shock reheating.

Chou, C.-L.↗
NASA NTRS1972

Experimental observation of Wannier levels in semi-insulating gallium arsenide.

Optical absorption in an electric field has been of increased interest in recent years since Callaway predicted that the Wannier levels may be observable in direct-transition semiconductors such as GaAs. In this work, such levels have been observed for the first time and found to be in substantial agreement with the Callaway theory.

Koss, R. W.↗
NASA NTRS1975

Feasibility investigation of growing gallium arsenide single crystals in ribbon form

Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3 encapsulated feed stock, confined by a quartz cover plate. By controlling the heat flow in the graphite boat and controlling the zoning rate, large grained, single phase polycrystalline samples with directional solidification and good thickness control were achieved. Arsenic vaporization was effectively suppressed at the melting point of GaAs by the B2O3 moat and 3 atmospheres of pressure. A vertical constrained-zone-melting apparatus with a B2O3 moat seal, rf heating, and water cooling on the bottom will be used to control the heat flow and temperature patterns required for growth of single crystal ribbons.

Richardson, D. L.↗
NASA NTRS1976

Third Working Meeting on Gallium Arsenide Solar Cells

Research results are reported for GaAs Schottky barrier solar cells, GaAlAs/GaAs heteroface solar cells, and GaAlAs graded band gap solar cells. Related materials studies are presented. A systems study for GaAs and Si solar concentrator systems is given.

Walker, G. H.↗
NASA NTRS1979

A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.

Kuhlman, G. J.↗
NASA NTRS1980

Oxidation of gallium arsenide in a plasma multipole device. Study of the MOS structures obtained

The oxygen plasma oxidation of GaAs was studied in order to obtain extremely high frequency responses with MOS devices. In the multipole system a homogeneous oxygen plasma of high density can easily be obtained in a large volume. This system is thus convenient for the study of plasma oxidation of GaAs. The electrical properties of the MOS diodes obtained in this way are controlled by interface states, located mostly in the upper half of the band gap where densities in the 10 to the 13th power/(sq cm) (eV) range can be estimated. Despite these interface states the possibility of fabricating MOSFET transistors working mostly in the depletion mode for a higher frequency cut-off still exists.

Gourrier, S.↗
NASA NTRS1980

Gallium arsenide (GaAs) solar cell modeling studies

Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed.

Heinbockel, J. H.↗
NASA NTRS1981

Gallium phosphide high temperature diodes

High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

Chaffin, R. J.↗
NASA NTRS1981

Reliability study of refractory gate gallium arsenide MESFETS

Refractory gate MESFET's were fabricated as an alternative to aluminum gate devices, which have been found to be unreliable as RF power amplifiers. In order to determine the reliability of the new structures, statistics of failure and information about mechanisms of failure in refractory gate MESFET's are given. Test transistors were stressed under conditions of high temperature and forward gate current to enhance failure. Results of work at 150 C and 275 C are reported.

Yin, J. C. W.↗