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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Efficient Perovskite Solar Cells Achieved via Rapid Photonic Annealing of all Stacking Layers: Unveiling the Crystallization Energy Window

In this study, we report high-performance perovksite solar cells (PSCs) with rapid photonic annealing (RPA) of all stacking layers, enabled by ultraviolet (UV) light-emitting diode (LED) sources, to replace lengthy and energy-intensive thermal annealing (TA). The UV-LED annealing technique allows for layer-specific annealing, where the selected light source provides a precise UV wavelength for maximizing the amount of light absorption by the target layer. The disparity in optical absorption between the target layer and the underlying films allows the stack of the underlying films to remain relatively unaffected, making this process ideal for heating sensitive substrates. Along with a systematic investigation into the layer-specific annealing mechanism of RPA, the results demonstrated that this UV-LED-based photonic annealing of all stacking layers (7 s for perovskite absorber) can produce PSCs with the power conversion efficiency (PCE) of over 23%, the highest reported among optically annealed PSCs. Moreover, the RPA device retains over 80% of the initial PCE over 1000 h under continuous 1 sun illumination at 55 °C and 30%–60% relative humidity (RH), while TA control device drops to 50% of its initial efficiency. Furthermore, these findings represent significant strides toward achieving rapid, cost-effective, and scalable manufacturing of commercial perovskite photovoltaics (PV).

14 SOLAR ENERGY↗
DOE OSTI2020

Developing inductively driven diagnostic X-ray sources to enable transformative radiography and diffraction capabilities on Z

Penetrating X-rays are one of the most effective tools for diagnosing high energy density experiments, whether through radiographic imaging or X-ray diffraction. To expand the X-ray diagnostic capabilities at the 26-MA Z Pulsed Power Facility, we have developed a new diagnostic X-ray source called the inductively driven X-pinch (IDXP). This X-ray source is powered by a miniature transmission line that is inductively coupled to fringe magnetic fields in the final power feed. The transmission line redirects a small amount of Zs magnetic energy into a secondary cavity where 150+ kA of current is delivered to a hybrid X-pinch. In this report, we describe the multi-stage development of the IDXP concept through experiments both on Z and in a surrogate setup on the 1 MA Mykonos facility. Initial short-circuit experiments to verify power ow on Z are followed by short-circuit and X-ray source development experiments on Mykonos. The creation of a radiography-quality X-pinch hot spot is verified through a combination of X-ray diode traces, laser shadowgraphy, and source radiography. The success of the IDXP experiments on Mykonos has resulted in the design and fabrication of an IDXP for an upcoming Z experiment that will be the first-ever X-pinch fielded on Z. We have also pursued the development of two additional technologies. First, the extended convolute post (XCP) has been developed as an alternate method for powering diagnostic X-pinches on Z. This concept, which directly couples the current owing in one of the twelve Z convolute posts to an X-pinch, greatly increases the amount of available current relative to an IDXP (900 kA versus 150 kA). Initial short-circuit XCP experiments have demonstrated the efficacy of power ow in this geometry. The second technology pursued here is the inductively driven transmission line (IDTL) current monitor. These low-current IDTLs seek to measure the current in the final power feed with high fidelity. After three generations of development, IDTL current monitors frequently return cleaner current measurements than the standard B-dot sensors that are fielded on Z. This is especially true on high-inductance experiments where the harshest conditions are created in the nal power feed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Epitaxial Regrowth and Hole Shape Engineering for Photonic Crystal Surface Emitting Lasers (PCSELs)

In the present research, epitaxial regrowth by molecular beam epitaxy (MBE) is investigated as a fabrication process for void-semiconductor photonic crystal (PhC) surface emitting lasers (PCSELs). The PhC is patterned by electron beam lithography (EBL) and inductively coupled plasma (ICP) etch and is subsequently regrown by molecular beam epitaxy to embed a series of voids in bulk semiconductor. Experiments are conducted to investigate the effects of regrowth on air-hole morphology. The resulting voids have a distinct teardrop shape with the radius and depth of the etched hole playing a very critical role in the final regrown void’s dimensions. We demonstrate that specific hole diameters can encourage deposition to the bottom of the voids or to their sidewalls, allowing us to engineer the shape of the void more precisely as is required by the PCSEL design. A 980 nm InGaAs quantum well laser structure is optimized for low threshold lasing at the design wavelength and full device structures are patterned and regrown. An optically pumped PCSEL is demonstrated from this process.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Changes in SSL Device Efficiency and Optical Performance Under Accelerated Aging Conditions

Lighting application efficiency (LAE) describes the efficient delivery of light from the light source to the lighted task and is viewed as a new frontier—increasing energy savings with solid-state lighting (SSL) technologies. The framework for LAE that is proposed by the U.S. Department of Energy (DOE) consists of four major elements: light source efficiency, optical delivery efficiency, spectral efficiency, and intensity effectiveness. This report focuses on a sampling of the available SSL products that can be broadly defined as having modified spectral output because the method of spectra modification has a significant impact on light source efficiency and long-term optical delivery and spectral efficiencies. This report focused on the changes in light source, optical delivery, and spectral efficiencies that occur during aging of SSL devices. An accelerated stress test (AST) regiment was developed for the devices under test (DUTs) examined in this report to provide insights into how the performance of SSL devices change with aging. The AST protocols demonstrate that the SSL products discussed in this report often reduce light source efficiency to achieve different spectral characteristics. In addition, aging of the optical components (e.g., lenses, solder masks) in SSL devices can produce increased light absorption, which negatively impacts optical delivery efficiency and light source efficiency. The modified spectral outputs of the selected SSL products discussed in this report come in a variety of form factors and achieve enhanced optical performance by using a variety of methods. All of the products examined in this study use mid-power light-emitting diodes (MP-LEDs), although the number, configuration, phosphor content, and light-emitting diode (LED) pump of the MP-LEDs differ. Product MS-1 is a 60-watt (W) replacement A19 lamp with a hermetically sealed glass globe, which contains an embedded optical filter to absorb green and yellow emissions, thereby creating a “sunlike” modified spectrum. Product MS-2 is a 60-W replacement A19 lamp with 30 MP-LEDs, and it uses a violet LED pump, along with green and red phosphor emissions, to produce a “healthy” spectrum. This spectrum omits blue emissions in an effort to reduce melanopic lux. Product MS-3 is an LED module consisting of 21 MP-LEDs that use a violet LED pump, along with blue, green, and red phosphors, to produce a “sunlike” spectrum. Products MS-4 and MS-5 are both 6-inch (in) downlights that use a manual switching mechanism so that users can select application-specific correlated color temperatures before installation. Products MS-4 and MS-5 both contain two LED primaries (2,700 Kelvin [K] and 5,000 K) for spectral tuning. Product MS-4 contains 12 MP-LEDs for each LED primary, and Product MS-5 contains 10 MP-LEDs for each LED primary. This report summarizes the overall findings from up to 8,000 hours (hrs) of AST on the lamp DUTs (Products MS-1 and MS-2); up to 5,000 hrs of AST on the LED light engine DUTs (Product MS-3); and up to 7,000 hrs of AST on the downlight DUTs (Products MS-4 and MS-5). The AST procedures used in this study included a room temperature operational life (RTOL) test, an operational life test conducted at 45 degrees Celsius (°C; 45OL) test, an operational life test conducted at 75°C (75OL), a wet high-temperature operational life test performed at 65°C and 90% relative humidity (6590), and a wet high-temperature operational life test performed at 75°C and 75% relative humidity (7575). The AST procedures used for Products MS-1 and MS-2 were RTOL, 45OL, and 6590. The AST procedures used for Products MS-3, MS-4, and MS-5 were RTOL, 75OL, and 7575. During the ASTs described herein, separate populations of each product (three DUTs in each population for Products MS-1, MS-2, MS-4, and MS-5; four DUTs in each population for Product MS-3) were subjected to power cycling of 1 hr on and 1 hr off. The key findings from this study include the following. Enhanced optical performance came at the cost of reduced light source efficiency for the lamps and light engines examined in this study. The optical filter used to produce a “sunlike” spectrum for Product MS-1 reduced light source efficiency by 26%, from 113 lumens per watt (lm/W) to 85 lm/W. Products MS-2 and MS-3 that used a violet-pumped LED to achieve “healthy” and “sunlike” enhanced optical performance, respectively, suffered the largest reduction in initial light source efficiency (49 lm/W for Product MS-2 and 68 lm/W for Products MS-3) perhaps because of the use of violet LED as the optical pump. Product MS-2 also had the poorest color fidelity because of undersaturation of blues and oversaturation of greens and yellows. Chromaticity maintenance of the products in this study was generally good, with parametric failure only occurring for one product at one AST condition (i.e., Product MS-3 at 7575). The chromaticity shift for Product MS-3 in 7575 test conditions resulted from reduced emissions of the broad green and red phosphors used to mimic sunlight in the 500–750 nanometer (nm) range. As a result of these phosphor emission losses, chromaticity shifted toward the more stable violet-pumped LED and blue phosphor. Although chromaticity maintenance was acceptable for most products tested, different chromaticity shift mechanisms were observed for temperature and humidity tests compared with temperature alone for Products MS-1, MS-2, and MS-3. For Product MS-1, a relative increase in green emissions was observed with humidity, which may indicate humidity-accelerated degradation of the optical filter at green wavelengths (optical delivery efficiency reduction) or degradation of the emitters in the red region (spectral efficiency reduction). The violet-pumped products (i.e., MS-2 and MS-3) exhibited different chromaticity shift behavior in the temperature-humidity environments, with Product MS-2 shifting generally yellow because of photo-induced oxidation of the plastic globe (i.e., a reduction of optical delivery efficiency) and Product MS-3 shifting toward violet and blue emitters because of faster loss of emission from green and red phosphors (i.e., a reduction in spectral efficiency). Because of an initial drop in power consumption, the light source efficiency of downlights (Products MS-4 and MS-5) increased at RTOL throughout the test duration. The light source efficiency initially increased during 75OL until a decay in luminous flux maintenance (LFM) dominated light source efficiency, whereas the light source efficiency decreased for the entire 7575 test duration. It was found that increasing the ambient environment of an SSL device from 25°C to 75°C decreases the LFM by 2.7 to 5.5, depending on design of the SSL device. Adding humidity to the system (75OL to 7575) was found to decrease LFM by another factor of approximately 3.0. A common location of failure was identified for the downlights (Products MS-4 and MS-5) operated in the 7575 environment. This failure abruptly occurred between 3,000 to 5,000 hrs of testing on the film capacitor of the electromagnetic interference (EMI) filter near the diode bridge for 11 of the 12 downlights. It is likely that this failure was caused by a combination of the high electrical voltage across the capacitor, the location of the capacitor near the heat sources (e.g., transformers, diode bridges, power resistors), and the high stress environment of 7575. Longer test times are needed to fully understand the LFM, luminous efficacy changes, and chromaticity shifts for some of the products. Because of the high reliability, light source efficiency, and spectral tuning capabilities of LEDs, the expectations of LAE for SSL products are greatly increased over traditional lighting products. The data gathered in this report begin to provide an understanding of the tradeoffs that current SSL products undergo when optimizing the different efficiency elements of LAE. As discussed in this report, the findings from the tests conducted show that the optimization of spectral efficiency can come at the cost of initial light source efficiency. Furthermore, the introduction of violet LEDs can promote long-term optical delivery efficiency degradation, and the introduction of optical filters or new phosphors can lead to unwanted spectral efficiency changes because the ratio of phosphor emitters changes with aging. The data presented in this report also identified a common failure location in 6-in downlights. The results regarding long-term behavior of the modified spectra devices studied provide valuable information about changes to the light source, spectral, and optical delivery efficiencies as the devices age. This information can be used to improve future SSL designs.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Highly Integrated Wide Bandgap Power Module for Next Generation Plug-In Vehicles (Final Report)

Wide bandgap devices are key enablers for high power density traction inverters. A highly integrated wide bandgap (WBG) power module enables higher temperature operation, higher inverter efficiency and overall smaller die area with the same power delivery. However, it requires careful design of the power module to take advantage of all the superior material properties that silicon carbide (SiC) provides over conventional silicon (Si) Insulated Gate Bipolar Transistor (IGBT) based design. This project developed an efficient and densely packed SiC power module for an automotive traction inverter application. Extensive study was performed to select the best performing SiC die considering a wide range of temperature variation, suitability to integrate into target packaging, robust body diode performance and overall high electrical efficiency. Multiple design ideas were explored to achieve lower stray inductance for both power loop and signal loop, uniform current distribution, compact form factor, and very high thermal performance. The final power module package includes all six inverter switches in the same module (six-pack) with die sintered at both bottom and top surfaces utilizing high performance substrate to achieve high electrical and thermal performance. Two power module variants were developed using 900 V and 1200 V devices for operating at two different high voltage levels (> 600 V HV battery). Both power modules were comprehensively characterized, and high efficiency operation of the inverter was confirmed through analysis. Finally, a complete functional inverter was built with the 1200V power modules using other essential components (HV capacitors, gate driver board, controller board, current sensor, connectors etc.) and tested using GM’s standard test procedure. There are several challenges associated with adopting WBG devices for high voltage operation. In order to assess and mitigate those challenges, GM and subrecipients of this project have conducted multiple detailed studies. This includes phase current reconstruction using integrated Rogowski coil, device junction temperature estimation using on-state gate resistance, modeling and testing the effect of high voltage and fast switching on motor insulation and bearings, partial discharge inception voltage measurement under different environmental conditions. Findings of all these studies are summarized in this report.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2021

Correlation Between Corrugation-Induced Flexoelectric Polarization and Conductivity of Low-Dimensional Transition Metal Dichalcogenides

The tunability of polar and semiconducting properties of low-dimensional transition metal dichalcogenides (TMDs) have propelled them to the forefront of fundamental and applied physical research. These materials can vary their electrophysical properties from nonpolar to ferroelectric, and from direct-band semiconducting to metallic. In addition to classical controlling factors, such as field effect, composition, and doping, new degrees of freedom emerge in TMDs due to the curvature-induced electron redistribution and the associated changes in electronic properties. Here we theoretically explore the elastic and electric fields, flexoelectric polarization and free charge density for a TMD nanoflake placed on a rough substrate with a sinusoidal corrugation profile. Finite element modelling results for different flake thickness and corrugation depth yield insights into the flexoelectric nature of the out-of-plane electric polarization and establish the unambiguous correlation between the polarization and static conductivity modulation. The modulation is caused by the coupling between the deformation potential and inhomogeneous elastic strains, which evolve in the TMD nanoflake due to the adhesion between the flake surface and corrugated substrate. We reveal a pronounced maximum in the thickness dependences of the electron and hole conductivity of MoS 2 and MoTe 2 nanoflakes placed on a corrugated substrate, which opens the way for the optimization of their geometry towards significant improvement in their polar and electronic properties, necessary for advanced applications in nanoelectronics and memory devices. Specifically, the obtained results can be useful for the development of nanoscale straintronic devices based on the bended MoS 2 , MoTe 2 , and MoSTe nanoflakes, such as diodes and bipolar transistors with a bending-controllable sharpness of p-n junctions.

42 ENGINEERING↗
DOE OSTI2020

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O 3 treatments

Plasma etching of p-type GaN creates n-type nitrogen vacancy (V N ) defects at the etched surface, which can be detrimental to device performance. In mesa isolated diodes, etch damage on the sidewalls degrades the ideality factor and leakage current. Here a treatment was developed to recover both the ideality factor and leakage current, which uses UV/O 3 treatment to oxidize the damaged layers followed by HF etching to remove them. The temperature dependent I–V measurement shows that the reverse leakage transport mechanism is dominated by Poole–Frenkel emission at room temperature through the etch-induced V N defect. Depth resolved cathodoluminescence confirms that the damage is limited to first several nanometers and is consistent with the V N defect.

42 ENGINEERING↗
DOE OSTI2025

Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs

We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence technique. Multiple mechanisms related to efficiency loss are independently examined, including injection efficiency, carrier density vs current density relationship, phase space filling, quantum-confined Stark effect, and Coulomb enhancement. An optimal QW thickness of around 2.7 nm in these InGaN/GaN LEDs was determined for QWs having constant In composition. Despite improved control of deep-level defects and lower carrier density at a given current density, LEDs with thin QWs still suffer from an imbalance in enhancement effects on the radiative and intrinsic Auger–Meitner recombination coefficients. The imbalance in enhancement effects results in a decline in internal quantum efficiency and radiative efficiency with decreasing QW thickness at low current density in LEDs with QW thicknesses below 2.7 nm. Here, we also investigate how LED modulation bandwidth varies with QW thickness, identifying the key trends and their implications for device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Experimental determination of the thermal, turbulent, and rotational ion motion and magnetic field profiles in imploding plasmas

A tutorial is presented on advances in spectroscopic diagnostic methods developed for measuring key plasma properties in pulsed-power systems such as Z-pinches, magnetized-plasma compression devices, ion and electron diodes, and plasma switches. The parameters measured include the true ion temperature in Z-pinch implosions, which led to a discovery that much of the ion kinetic energy at stagnation is stored in hydrodynamic rather than in thermal motion. This observation contributed a new important insight into the understanding of the ion thermalization at stagnation and stimulated further investigations of turbulence at stagnation, discussed here too. The second part of this tutorial is devoted to the development of measurements for magnetic-field distributions in Z-pinches and in other pulsed-power systems, as well as their use in studying the plasma dynamics, resistivity, and pressure and energy balance. The latter study raises intriguing questions on the implosion process. In particular, in Z-pinches, the current during stagnation was found to largely flow at relatively large radii, outside the stagnation region. The magnetic-field measurements also enable investigations into the compression of a pre-magnetized cylindrical plasma that uncover striking phenomena related to the current flow, where the current was found to redistribute toward the outer regions during the implosion. Observation of the rotation of the magnetized plasma is also discussed. Lastly, experimental and theoretical investigations of a non-diffusive fast penetration of magnetic field into a low-density plasma, including its effect on the plasma dynamics, are described

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Temperature estimation in a spatially inhomogeneous flame by diode laser absorption spectroscopy

A two-temperature (2T) model is proposed for estimating the temperature of a spatially inhomogeneous hot zone using single-beam diode laser absorption spectrometry. The proposed algorithm is based on fitting experimental absorption spectra by a linear combination of two database-simulated single-temperature spectra with different temperatures. The model efficiency is experimentally demonstrated when determining the temperature in different flame zones of a Wolfgard – Parker slot burner. The proposed 2T algorithm is used to find the maximum and minimum temperatures in different flame sections, which are compared with local temperatures in the same flame zones measured by the method of coherent anti-Stokes Raman scattering (CARS). It is shown that the maximum temperatures determined by the proposed 2T algorithm are in good agreement with CARS data in flame zones where high-temperature regions prevail. A good agreement between the minimum temperatures obtained by these two methods is also observed for predominantly cold zones. (paper)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Carrier Dynamics of Polar, Semipolar, and Nonpolar InGaN/GaN LEDs Measured by Small-Signal Electroluminescence

The carrier dynamics in InGaN/GaN light-emitting diodes (LEDs) are directly tied to their efficiency and maximum modulation speed, which are important metrics for solid-state lighting, displays, and optical communication. In this work, we measure the carrier dynamics of a variety of InGaN/GaN LEDs using small-signal electroluminescence methods [1]. A rate equation approach and associated small-signal circuit are used to model carrier injection, recombination in the active region, recombination in the cladding regions, and carrier escape. The model is fit to the measured optical frequency response (S21) and input impedance (S11) of the LEDs to extract the various carrier lifetimes, the carrier density, and the radiative and non-radiative recombination rates. We specifically study planar nonpolar and semipolar LEDs, which show record-high modulation speeds for III-nitride LEDs and present the modulation characteristics of core-shell nanowire-based LEDs. The planar nonpolar m-plane ($101\bar{0}$) micro-LEDs achieve a record-high -3dB modulation bandwidth for a III-nitride LED of 1.5 GHz [2]. The -3dB response of an electrically injected nanowire-based micro-LED with nonpolar facets is also reported, showing a -3dB bandwidth of 1.2 GHz [3]. The high speed is attributed to the shorter carrier lifetime associated with the nonpolar orientation. We also study the carrier dynamics in semipolar ($20\bar{2}\bar{1}$) LEDs for various temperatures [4]. Finally, we present carrier dynamics measurements on commercial-grade c-plane epitaxy for various active region designs, including a wavelength series and a growth quality series. The wavelength series offers insight into the contributions of the quantum confined Stark effect (QCSE) and InGaN material quality on the green gap [5]. The growth quality series investigates the role of non-radiative centers on the LED performance. Extraction of the carrier dynamics using small-signal electroluminescence offers insight into the factors limiting the efficiency and high-speed performance of III-nitride emitters and can be leveraged to ultimately improve the devices.

LEDs, InGaN, electroluminescence, bandwidth, modul↗
DOE OSTI2023

Effect of material composition of diamond field emission array cathodes on quality of transversely shaped beams

Diamond field emitter array field emission cathodes (DFEA FECs) are attractive for the next generation of injectors due to their ability to produce transversely shaped beams without the need for complex masking or laser schemes. However, reliability of this cathode technology remains a challenging issue as principal mechanisms guiding and allowing for output beam shaping remained poorly understood. Here, this paper reports the results of testing two DFEA FECs with the same pattern and emitter tip geometry. Although both cathodes were able to sustain gradients of 44 MV/m and produce maximum output integral charge of 0.5 nC per radio frequency pulse, their emission patterns were different. One cathode did not produce a shaped beam, while the other one did. This difference was explained by the extent of the local variations of the diamond material across the arrays as discovered by spatially resolved Raman spectroscopy. The main practical takeaways were (i) tip sharpness was not a prerequisite for producing a shaped beam and instead (ii) material characteristics resulting in different cathode ballast resistance affected emission spatial uniformity across the array and hence the beam shaping.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Linewidth narrowing in self-injection-locked on-chip lasers

Abstract Stable laser emission with narrow linewidth is of critical importance in many applications, including coherent communications, LIDAR, and remote sensing. In this work, the physics underlying spectral narrowing of self-injection-locked on-chip lasers to Hz-level lasing linewidth is investigated using a composite-cavity structure. Heterogeneously integrated III–V/SiN lasers operating with quantum-dot and quantum-well active regions are analyzed with a focus on the effects of carrier quantum confinement. The intrinsic differences are associated with gain saturation and carrier-induced refractive index, which are directly connected with 0- and 2-dimensional carrier densities of states. Results from parametric studies are presented for tradeoffs involved with tailoring the linewidth, output power, and injection current for different device configurations. Though both quantum-well and quantum-dot devices show similar linewidth-narrowing capabilities, the former emits at a higher optical power in the self-injection-locked state, while the latter is more energy-efficient. Lastly, a multi-objective optimization analysis is provided to optimize the operation and design parameters. For the quantum-well laser, minimizing the number of quantum-well layers is found to decrease the threshold current without significantly reducing the output power. For the quantum-dot laser, increasing the quantum-dot layers or density in each layer increases the output power without significantly increasing the threshold current. These findings serve to guide more detailed parametric studies to produce timely results for engineering design.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Multi-Scale Integrated Monitoring System for Enhancing Methane Emission Detection, Quantification & Prediction

This report details the progress and findings of a comprehensive study on reviewing existing solutions, identifying technology gaps, and formulating an “all-in-one” integrated strategy for developing the next-generation multiscale methane monitoring and modeling platform, conducted under grant number DE-FE0032292. Co-led by Dr. David Ebert, Dr. Binbin Weng, and Dr. Chenghao Wang at the University of Oklahoma, the project’s goal was to develop an integrated approach for building this engineering platform to detect, quantify, and mitigate methane emissions across various temporal scale, spatial scales, and sectors. The planning grant study began with an extensive review of various methane sensing and monitoring technologies and systems, surveying over 100 technology providers globally. This review revealed the prevalence of optical methods over chemical methods in commercially available sensors, with Non-Dispersive Infrared (NDIR), Tunable Diode Laser Absorption Spectroscopy (TDLAS), and Optical Gas Imaging (OGI) cameras being the most prevalent options. A trend towards more advanced optical techniques was observed, driven by increased regulatory focus and technological advancements. The technical evaluation of these sensing technologies provided crucial insights into their capabilities and limitations. The study examined emerging technologies such as Differential Absorption LiDAR (DIAL), which show promise for high-precision and long-range detection. The team then investigated the features and application bandwidth of various sensing platforms, including handheld, fixed/stationary, mobile, aerials, and spaceborne monitors. Pilot field studies were conducted to assess the capabilities of solutions for different emission scenarios. Field work with sensor deployments was conducted at three distinct site types: an oil & gas industry site, a cattle ranching operation, and a waste processing facility. The team also conducted a thorough review of methane flux inverse modeling approaches, focused on physically based methods. These approaches were categorized into simple, intermediate, and advanced methods. A realtime WRF-GHG (Weather Research and Forecasting-Greenhouse Gas) modeling system was developed and applied, incorporating multiple data sources to guide field experiments and inform methane plume detection. The project identified and analyzed numerous categories of methane data sources, including satellite measurements, ground-based sensors, and inventory databases. Key platforms examined include EDGAR, EPA GHGI, NASA TROPOMI, Carbon Mapper, and Climate TRACE, among others. The team proposed an architecture for a comprehensive methane monitoring platform. This system incorporates multi-source data acquisition, advanced data processing and assimilation, interactive visualization tools, and analytical capabilities for emissions forecasting and scenario analysis. The proposed platform aims to provide a user-friendly interface catering to various stakeholders, from researchers to policymakers. The architecture includes sophisticated data ingestion methods, a centralized data warehouse, and advanced analytical tools for data fusion and interpretation. To ensure the relevance and effectiveness of the proposed system, a comprehensive survey was conducted to gather stakeholder input on system requirements. Key findings include a strong need for integrating various data types and formats, a preference for real-time data updates and advanced visualization tools, and a demand for user-friendly interfaces catering to different expertise levels.

03 NATURAL GAS↗
DOE OSTI2025

Role of the junction voltage on the overflow current in light-emitting diodes

Quantum-well (QW)-based light emitters, such as light-emitting diodes (LEDs) and lasers, of various semiconductor materials experience a reduction in their efficiency when operating at higher temperatures, a phenomenon referred to as “thermal droop.” Among the various claims on the origins of thermal droop, an increased overflow current with increasing temperatures is a common contender. Since overflow of carriers can only occur when the junction voltage 𝑉 Junction approaches the built-in voltage 𝑉 BI of any diodes, we develop a simple method relating the difference between 𝑉 Junction and 𝑉 BI to approximate the upper limit of overflow occurring in QW-based light-emitting diodes. The measured difference between 𝑉 Junction and 𝑉 BI of state-of-the-art commercial blue and green In⁢Ga⁢N-based LEDs at temperatures up to ∼450 K suggests negligible overflow. To further experimentally verify the absence of overflow, we perform temperature-dependent electron emission spectroscopy on the same commercial blue and green LEDs and find no evidence of thermally enhanced overflow carriers up to ∼450 K. In agreement with our claims that 𝑉 Junction must approach 𝑉 BI for overflow to occur, two-dimensional temperature-dependent electrical simulations of violet, blue, and green LEDs including alloy disorder and V-defects demonstrate that overflow can be significant in violet LEDs, where the small band offset between the In⁢Ga⁢N QW and Ga⁢N cladding layers due to the larger QW bandgap requires larger 𝑉 Junction to reach standard operating current densities, thereby approaching 𝑉 BI . By contrast, simulations indicate that overflow is negligible in blue and green LEDs, whose smaller QW bandgaps result in smaller quasi-Fermi levels difference to reach significant carrier injection, resulting in a 𝑉 Junction much smaller than 𝑉 BI up to large operating current densities. Considering that overflow is negligible in blue and longer-wavelength LEDs, and our observations of the large thermal droop occurring at low current densities, where Shockley-Read-Hall (SRH) recombination dominates, we conclude that thermally enhanced SRH processes are the most significant contributor to thermal droop. Finally, we also simulate the carrier densities in the different QWs of a multiple-QW LED and observe a reduction in the total carrier density at a given operating current density, which results in a decrease in the total Auger-Meitner current of the LED from just the thermally enhanced carrier redistribution among QWs without taking any possible additional temperature dependence of their recombination coefficients. Taking all this into account, minimizing thermal droop effects in LEDs can be achieved by a reduction in defect density, using wider band gap p-n junction-defining cladding layers, and operating at higher currents.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Inferring fusion nuclear burnwidths with low gain photomultiplier impulse response functions

When an inertial confinement fusion implosion is compressed, it maintains thermonuclear density and temperatures for a very short time scale, about 100 ps. The Gamma Reaction History diagnostic measures the time evolution of the fusion burn, but its temporal resolution is limited by the use of a photomultiplier tube (PMT) to amplify the photon signal. Multichannel plate-based PMTs have a fast (~120 ps) full-width at half-max impulse response function (IRF), but the time scale is similar to the incoming physics signal. An analysis routine is used to remove the effect of the PMT IRF and infer the incident fusion burnwidth. With the National Ignition Facility achieving ignition and creating much brighter signals, the PMTs are run at gains three orders of magnitude lower than nominal operation. Calibration at these settings shows the PMT IRFs get ~15% wider. Taking the gain-dependent IRF can affect the inferred nuclear burnwidths by up to ~15%.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Effect of Controlled Artificial Disorder on the Magnetic Properties of EuFe 2 (As 1– x P x ) 2 Ferromagnetic Superconductor

Static (DC) and dynamic (AC, at 14 MHz and 8 GHz) magnetic susceptibilities of single crystals of a ferromagnetic superconductor, EuFe 2 ( As 1 – x P x ) 2 ( x = 0.23), were measured in pristine state and after different doses of 2.5 MeV electron or 3.5 MeV proton irradiation. The superconducting transition temperature, T c ( H ) , shows an extraordinarily large decrease. It starts at T c ( H = 0 ) ≈ 24 K in the pristine sample for both AC and DC measurements, but moves to almost half of that value after moderate irradiation dose. Remarkably, after the irradiation not only T c moves significantly below the FM transition, its values differ drastically for measurements at different frequencies, ≈16 K in AC measurements and ≈12 K in a DC regime. We attribute such a large difference in T c to the appearance of the spontaneous internal magnetic field below the FM transition, so that the superconductivity develops directly into the mixed spontaneous vortex-antivortex state where the onset of diamagnetism is known to be frequency-dependent. We also examined the response to the applied DC magnetic fields and studied the annealing of irradiated samples, which almost completely restores the superconducting transition. Overall, our results suggest that in EuFe 2 ( As 1 – x P x ) 2 superconductivity is affected by local-moment ferromagnetism mostly via the spontaneous internal magnetic fields induced by the FM subsystem. Another mechanism is revealed upon irradiation where magnetic defects created in ordered Eu 2 + lattice act as efficient pairbreakers leading to a significant T c reduction upon irradiation compared to other 122 compounds. On the other hand, the exchange interactions seem to be weakly screened by the superconducting phase leading to a modest increase of T m (less than 1 K) after the irradiation drives T c to below T m . Our results suggest that FM and SC phases coexist microscopically in the same volume.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗