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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

The Effect of Luminance Pattern on Nighttime Discomfort Glare Response - CRADA 653 (Abstract)

Light Emitting Diode (LED) adoption is critical for widespread energy savings from commercial outdoor lighting systems. A complaint from the public, concerns glare from LED light fixtures especially those with exposed LED arrays. This human factor study will examine luminance uniformity of the fixture aperture to identify parameters related to this response. The outcome will inform optical design by lighting manufacturers, retaining LED energy efficiency while mitigating glare. The results may also lead to improved industry standard glare metrics for lighting. Pacific Northwest National Laboratory’s (PNNL) Lighting Science and Technology Lab in Portland OR has a purpose-built apparatus with exposed LED arrays that have been used for prior work. It can easily be adapted for use in this experiment. Interchangeable templates will allow changing patterns for the stimulus. Glare ratings from the recruited subjects will be analyzed and reported in a peer-reviewed journal for application by luminaire manufacturers for improved products. The McClung Foundation’s interest is to better understand human perception of lighting, leading to more comfortable and effective visual environments. Members of the Foundation’s Technical Review Committee will be instrumental in reviewing the experimental design, analysis, and the final report. They will also help disseminate information about the results within the lighting community.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2020

Origin of Rashba Spin-Orbit Coupling in 2D and 3D Lead Iodide Perovskites

isaWhittaker-Brooks2 & Tho D. Nguyen1* We studied spin dynamics of charge carriers in the superlattice-like Ruddlesden-Popper hybrid lead iodide perovskite semiconductors, 2D (BA)2(MA)Pb2I7 (with MA= CH3NH3, and BA= CH3(CH2)3NH3), and 3D MAPbI3 using the magnetic field effect (MFE) on conductivity and electroluminescence in their light emitting diodes (LEDs) at cryogenic temperatures. The semiconductors with distinct structural/ bulk inversion symmetry breaking, when combined with colossal intrinsic spin–orbit coupling (SOC), theoretically give rise to giant Rashba-type SOC. We found that the magneto-conductance (MC) magnitude increases monotonically with the emission intensity and saturates at ≈0.05% and 0.11% for the MAPbI3 and (BA)2(MA)Pb2I7, respectively. The magneto-electroluminescence (MEL) response with similar line shapes as the MC response has a significantly larger magnitude, and essentially stays constant at ≈0.22% and ≈0.20% for MAPbI3 and (BA)2(MA)Pb2I7, respectively. The sign and magnitude of the MC and MEL responses can be quantitatively explained in the framework of the Δg-based excitonic model using rate equations. Remarkably, the width of the MEL response in those materials linearly increases with increasing the applied electric field, where the Rashba coefficient in (BA)2(MA) Pb2I7 is estimated to be about 7 times larger than that in MAPbI3. Our studies might have significant impact on future development of electrically-controlled spin logic devices via Rashba-like effects

36 MATERIALS SCIENCE↗
NASA NTRS1977

Advanced development of Pb-salt semiconductor lasers for the 8.0 to 15.0 micrometer spectral region

The technology was studied for producing Pb-salt diode lasers for the 8-51 micron spectral region suitable for use as local oscillators in a passive Laser Heterodyne Spectrometer (LHS). Consideration was given to long range NASA plans for the utilization of the passive LHS in a space shuttle environment. The general approach was to further develop the method of compositional interdiffusion (CID) recently reported, and used successfully at shorter wavelength. This technology was shown to provide an effective and reproducible method of producing a single-heterostructure (SH) diode of either the heterojunction or single-sided configuration. Performance specifications were exceeded in several devices, with single-ended CW power outputs as high as 0.88 milliwatts in a mode being achieved. The majority of the CID lasers fabricated had CW operating temperatures of over 60K; 30% of them operated CW above the boiling temperature of liquid nitrogen. CW operation above liquid nitrogen temperature was possible for wavelengths as long as 10.3 microns. Operation at 77K is significant with respect to space shuttle operations since its allows considerable simplification of cooling method.

Linden, K. J.↗
DOE OSTI2020

Modeling the Effect of Film Morphology on the Performance of an OLED Device

Organic Light Emitting Diode (OLED) technology is replacing the liquid crystal displays (LCD) in cell phones and is also expected to impact television displays in the future. Dow has an active OLED research program. To complement and ultimately drive this effort, it is necessary to develop efficient computational screening tools for selection and optimization of target molecules. To this end we sought to identify and expand on existing models used by Dow that can better predict the mobility of electrons and holes in organic materials. We focused on N,N'- bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPD), frequently used in academic studies of organic light-emitting diodes; we also studied 4,4'-Bis(N-carbazolyl)-1,1'-biphenyl (CBP), tris(4-carbazoyl-9-ylphenyl)amine (TCTA), and bathophenanthroline (BPhen). We developed a workflow, using a combination of molecular dynamics and quantum chemistry calculations, to predict trends in the electronic structure that correlate with measured electron and hole mobilities of small molecule materials such as NPD for OLEDs, comparing with measurements in the literature and at Dow. This work comprised a first step toward predictive charge carrier mobilities in small-molecule electronic materials with complex morphologies.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Highly Emissive Semi-Ladder-Type Copolymers, Aggregation State, and Solution-Processed Organic Light-Emitting Transistor

An organic light-emitting transistor (OLET) integrates the logic function of a field-effect transistor (FET) with electroluminescence of a light-emitting diode (LED) into a single device. This has the potential to play an important role in smart displays, electrically pumped organic laser, and other flexible electronic devices. For achieving high-performance solution-processed OLET, three semiladder copolymers—TPTI-CC, TPTI-C, and TPTI-F—were developed in this study. It was found that variation in the chemical structure lead to significant differences in energy level, emission color, and intermolecular aggregation. High photoluminescence quantum yields (PLQY) was obtained in these three polymers. Solution-processed trilayered OLET devices were fabricated, which exhibited strong electroluminescence, balanced charge mobility, and external quantum efficiency (EQE) of 2.8%.

36 MATERIALS SCIENCE↗
NASA NTRS1969

Semiconductor physics

Irradiation effects on semiconductor properties, luminescence, and p-i-n diode electrical properties

Arora, B.↗
NASA NTRS1982

Surface morphology of erbium silicide

The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.

Lau, S. S.↗
NASA NTRS1995

Low-cost 20-22 GHz MIC active receiver/radiometer

A microwave integrated circuit active receiver is built and tested at 19-25 GHz. The receiver consists of a planar CPW-fed double folded-slot antenna coupled to a six-stage MESFET (metal semiconductor field effect transistors) amplifier and followed by a planar Schottky-diode detector. The folded-slot antenna on a GaAs half-space results in a wide frequency bandwidth suitable for MMIC amplifiers. The measured system performance show a video responsivity close to 1 GV/W at 20 GHz with a 3-dB bandwidth of 1500 MHz. A novel method which uses the planar video detector after the amplifier stages as an RF (radio frequency) mixer is used to measure the noise-figure of the direct detection radiometer. The system noise figure is 4.8 dB at 22 GHz. The radiometer sensitivity to a hot/cold load is 3.8 mu V/K. The measured antenna patterns show a 90% Gaussicity at 20-22 GHz. The active MIC receiver can be integrated monolithically for low-cost applications and is well suited for millimeter-wave linear imaging arrays.

PLANAR SCHOTTKY DIODE DETECTOR↗
DOE OSTI2024

In situ estimation of ice crystal properties at the South Pole using LED calibration data from the IceCube Neutrino Observatory

The IceCube Neutrino Observatory instruments about 1 km 3 of deep, glacial ice at the geographic South Pole. It uses 5160 photomultipliers to detect Cherenkov light emitted by charged relativistic particles. An unexpected light propagation effect observed by the experiment is an anisotropic attenuation, which is aligned with the local flow direction of the ice. We examine birefringent light propagation through the polycrystalline ice microstructure as a possible explanation for this effect. The predictions of a first-principles model developed for this purpose, in particular curved light trajectories resulting from asymmetric diffusion, provide a qualitatively good match to the main features of the data. This in turn allows us to deduce ice crystal properties. Since the wavelength of the detected light is short compared to the crystal size, these crystal properties include not only the crystal orientation fabric, but also the average crystal size and shape, as a function of depth. By adding small empirical corrections to this first-principles model, a quantitatively accurate description of the optical properties of the IceCube glacial ice is obtained. In this paper, we present the experimental signature of ice optical anisotropy observed in IceCube light-emitting diode (LED) calibration data, the theory and parameterization of the birefringence effect, the fitting procedures of these parameterizations to experimental data, and the inferred crystal properties.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2022

Dopant Compensation within the Intrinsic Poly-Si Isolation Region in Poly-Si/SiOx Passivated IBC Si Solar Cells

We report on the effect of dopant compensation within intrinsic poly-Si regions between p- and n-type fingers of poly-Si/SiOx passivated interdigitated back contact (IBC) solar cells using intrinsic poly-Si as the isolation region between the doped poly-Si fingers. First, we show that dopants from the doped fingers contaminate the intrinsic gap, resulting in doping of the entire intrinsic gap and overlap of the dopant tails from each finger. Next, we show that despite this doping across the gap, shunting between the doped fingers does not occur. We show that this is a result of trap-assisted compensation creating a highly resistive intrinsic region, preventing shunt. We simulate shunt resistance across the gap based on local carrier concentration and deep trap density. We show that trap defects within the poly-Si enhance compensation between the dopant tails. We experimentally confirm these predictions by scanning spreading resistance microscopy of the gap showing ~20 um domain with resistivity ~10^7 ..omega.. cm. Additionally, Kelvin probe force microscopy are compared to finite element simulations which result in the same approximate shape for potential profile, indicating diode behavior across the isolation region. These results demonstrate the powerful effect that trap defects have within the poly-Si isolation region and suggest that precision patterning is not as essential as once thought.

dopant compensation↗
NASA NTRS2005

Simulated Space Environment Effects on the Blocking Force of Silicone Adhesive

The International Space Station (ISS) solar arrays utilize MD-944 diode tape to protect the underlying diodes in the solar array panel circuit and also provide thermal conditioning and mechanical support. The diode tape consists of silicone pressure sensitive adhesive (Dow Coming QC-7725) with a protective Kapton over-layer. On-orbit, the Kapton over-layer will erode under exposure to atomic oxygen (AO) and the underlying exposed silicone adhesive will ultimately convert, under additional AO exposure, to a glass like silicate. The current operational plan is to retract ISS solar array P6 and leave it stored under load for a long duration (6 months or more) during ISS assembly. With the Kapton over-layer eroded away, the exposed silicone adhesive must not cause the solar array to stick to itself or cause the solar array to fail during redeployment. Previous testing by Lockheed-Martin Space Systems (LMSS) characterized silicone blocking following exposure to low energy atomic oxygen (AO) in an asher facility, but this is believed to be conservative. An additional series of tests was performed by the Environmental Effects Group at MSFC under direction from the ISS Program Office Environments Team. This test series included high energy AO (5 eV), near ultraviolet (NUV) radiation and ionizing radiation, singly and in combination. Additional samples were exposed to thermal energy AO (<0.1 ev) for comparison to the LMSS tests. Diode tape samples were exposed to each environment constituent individually, put under preload for seven days and then the resulting blocking force was measured using a tensile machine. Additional samples were exposed to AO, NUV and electrons in series and then put under long term (three to ten months) preload to determine the effect of preload duration on the resulting blocking force of the silicone-to-silicone bond. Test results indicate that high energy AO, ultraviolet radiation and electron ionizing radiation exposure all reduce the blocking force for a silicone-to-silicone bond. AO exposure produces the most significant reduction in blocking force.

Boeder, Paul↗
DOE OSTI2022

Charge carrier motion and effect of fixed oxide charge in a microstructured silicon radiation detector

Signal formation in a microstructured semiconductor neutron detector is more complex than in planar diode geometry. Three-dimensional microstructures are laterally smaller than the ionization cloud length, and the electric fields may be weak enough to exhibit plasma time effects. This work is the first detailed treatment of charge carrier motion in these complex semiconductor devices to replicate the time profile and signal magnitude. Simulations were performed using COMSOL Multiphysics to investigate various parameters that affect the propagation of the charge cloud. It was observed that the size of the simulated three-dimensional structure had an impact on the induced current pulse, indicating the importance of simulation geometry optimization to accurately simulate charge cloud expansion. COMSOL Multiphysics was used to replicate accurate charge creation profiles using energy deposition information imported from radiation transport codes. A detailed simulation methodology is presented to benchmark preamplifier event pulses along with complexities in modeling the charge carrier motion along the etched microstructured trenches with Si–SiO 2 boundary conditions, including fixed oxide charge and interface trapping.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2008

SiC vs. Si for High Radiation Environments: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Commercial silicon carbide and silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. Changes in forward bias I-V characteristics are reported for fluences up to 4 x 10(exp 14) p/cm2. For devices of both material types, the series resistance is observed to increase as the fluence increases. The changes in series resistance result from changes in the free carrier concentration due to carrier removal by the defects produced. A simple model is presented that allows calculation of the series resistance of the device and then relates the carrier removal rate to the changes in series resistance. Using this model to calculate the carrier removal rate in both materials reveals that the carrier removal rate in silicon is less than that in silicon carbide, indicating that silicon is the more radiation tolerant material.

Schottky barrier power diodes↗
NASA NTRS1998

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

The continued down-scaling of electronic devices, in particular the commercially dominant MOSFET, will force a fundamental change in the process of new electronics technology development in the next five to ten years. The cost of developing new technology generations is soaring along with the price of new fabrication facilities, even as competitive pressure intensifies to bring this new technology to market faster than ever before. To reduce cost and time to market, device simulation must become a more fundamental, indeed dominant, part of the technology development cycle. In order to produce these benefits, simulation accuracy must improve markedly. At the same time, device physics will become more complex, with the rapid increase in various small-geometry and quantum effects. This work describes both an approach to device simulator development and a physical model which advance the effort to meet the tremendous electronic device simulation challenge described above. The device simulation approach is to specify the physical model at a high level to a general-purpose (but highly efficient) partial differential equation solver (in this case PROPHET, developed by Lucent Technologies), which then simulates the model in 1-D, 2-D, or 3-D for a specified device and test regime. This approach allows for the rapid investigation of a wide range of device models and effects, which is certainly essential for device simulation to catch up with, and then stay ahead of, electronic device technology of the present and future. The physical device model used in this work is the density-gradient (DG) quantum correction to the drift-diffusion model [Ancona, Phys. Rev. B 35(5), 7959 (1987)]. This model adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We used the DG model in 1-D and 2-D (for the first time) to simulate both bipolar and unipolar devices. Simulations of heavily-doped, short-base diodes indicated that the DG quantum corrections do not have a large effect on the IN characteristics of electronic devices without heteroj unction s. On the other hand, ultra-small MOSFETs certainly exhibit important quantum effects that the DG model will include: quantum repulsion of the inversion and gate charges from the oxide interfaces, and quantum tunneling through thin gate oxides. We present initial results of 2-D DG simulations of ultra-small MOSFETs. Subtle but important issues involving the specification of the model, boundary conditions, and interface constraints for DG simulation of MOSFETs will also be illuminated.

Biegal, Bryan A.↗
NASA NTRS2017

Effects of White Leds on Growth and Phytonutrients of Outredgeous Romaine Lettuce When Supplemented with Various Monochromatic Wavelengths

Growing plants in space will be an essential part of sustaining astronauts during long-range missions. To drive photosynthesis, light-emitting diodes (LEDs) are becoming superior because of their efficiency, longevity, small size, safety, and wavelength versatility. Isolating the effects of certain wavelengths on plant growth when combined with white light is attracting attention. To optimize crop production/quality in space, this study has aimed to configure novel light recipes for the Advanced Plant Habitat currently aboard the International Space Station (ISS). By using white light as a background to maintain normal growth, the addition of monochromatic wavelengths provides a clearer understanding of how each part of the visible spectrum affects plant growth. By growing Outredgeous lettuce under six treatments of White (W) LEDs, W + blue (B), W+ green (G), W + red (R), W + far red (FR), and RGB + FR LEDs with ratios similar to natural sunlight, this investigation has assessed differences in biomass, morphology, chlorophyll, and the synthesis of key phytonutrients. The potential for Outredgeous to produce anthocyanin, lutein, potassium, magnesium, and iron is paramount to maintaining astronaut health. The crop responses to each treatment have been evaluated and the optimal LED combination for both plant yield and nutrient content will be presented.

Food Production↗
DOE OSTI2021

High-resolution planar electron beam induced current in bulk diodes using high-energy electrons

Understanding the impact of high-energy electron radiation on device characteristics remains critical for the expanding use of semiconductor electronics in space-borne applications and other radiation harsh environments. Here in this paper, we report on in situ measurements of high-energy electron radiation effects on the hole diffusion length in low threading dislocation density homoepitaxial bulk n-GaN Schottky diodes using electron beam induced current (EBIC) in high-voltage scanning electron microscopy mode. Despite the large interaction volume in this system, quantitative EBIC imaging is possible due to the sustained collimation of the incident electron beam. This approach enables direct measurement of electron radiation effects without having to thin the specimen. Using a combination of experimental EBIC measurements and Monte Carlo simulations of electron trajectories, we determine a hole diffusion length of 264 ± 11 nm for n-GaN. Irradiation with 200 kV electron beam with an accumulated dose of 24 × 10 16 electrons cm -2 led to an approximate 35% decrease in the minority carrier diffusion length.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1973

GaN for LED applications

In order to improve the synthesis of GaN the effect of various growth and doping parameters has been studied. Although Be, Li, Mg, and Dy can be used to overcompensate native donors, the most interesting acceptor element is Zn. The emission spectrum and the luminescence efficiency depend on the growth temperature (below 800 C), on the partial pressure of the doping impurity, and on the duration of growth. Blue-green electroluminescence with a power efficiency of 0.1 percent and a brightness of 850 fL (at 0.6 mA and 22.5 V) was obtained. Some diodes allow the color of the emitted light to change by reversing the polarity of the bias. Continuous operation of a diode over a period of 5 months showed no evidence of degradation. The luminescence properties of ion-implanted GaN were studied. Delay effects were found in the electroluminescence of diodes, although, with a dc bias, a 70-MHz modulation was possible.

Pankove, J. I.↗