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Techniques for directly converting an electrical signal into an optical signal by using a whispering gallery mode optical resonator formed of a dielectric material that allows for direct modulation of optical absorption by the electrical signal.
A circularly polarized microstrip array antenna utilizing a honeycomb substrate made of dielectric material to support on one side the microstrip patch elements in an array, and on the other side a stripline circuit for feeding the patch elements in subarray groups of four with angular orientation and phase for producing circularly polarized radiation, preferably at a 0.degree., 90.degree., 180.degree. and 270.degree. relationship. The probe used for coupling each feed point in the stripline circuit to a microstrip patch element is teardrop shaped in order to introduce capacitance between the coupling probe and the metal sheet of the stripline circuit that serves as an antenna ground plane. The capacitance thus introduced tunes out inductance of the probe. The shape of the teardrop probe is not critical. The probe capacitance required is controlled by the maximum diameter for the teardrop shaped probe, which can be empirically determined for the operating frequency. An aluminum baffle around each subarray blocks out surface waves between subarrays.
It is an object of the invention to provide a miniature traveling wave tube which will have most of the advantages of solid state circuitry but with higher efficiency and without being highly sensitive to temperature and various types of electromagnetic radiation and subatomic particles as are solid state devices. The traveling wave tube which is about 2.5 cm in length includes a slow wave circuit (SWS) comprising apertured fins with a top cover which is insulated from the fins by strips or rungs of electrically insulating, dielectric material. Another object of the invention is to construct a SWS of extremely small size by employing various grooving or etching methods and by providing insulating strips or rungs by various deposition and masking techniques.
The design, fabrication, and testing of a flexible, laminar, anisotropic piezoelectric composite actuator utilizing machined PMN-32%PT single crystal fibers is presented. The device consists of a layer of rectangular single crystal piezoelectric fibers in an epoxy matrix, packaged between interdigitated electrode polyimide films. Quasistatic free-strain measurements of the single crystal device are compared with measurements from geometrically identical specimens incorporating polycrystalline PZT-5A and PZT-5H piezoceramic fibers. Free-strain actuation of the single crystal actuator at low bipolar electric fields (+/- 250 V/mm) is approximately 400% greater than that of the baseline PZT-5A piezoceramic device, and 200% greater than that of the PZT-5H device. Free-strain actuation under high unipolar electric fields (0-4kV/mm) is approximately 200% of the PZT-5A baseline device, and 150% of the PZT-5H alternate piezoceramic device. Performance increases at low field are qualitatively consistent with predicted increases based on scaling the low-field d33 piezoelectric constants of the respective piezoelectric materials. High-field increases are much less than scaled d33 estimates, but appear consistent with high-field freestrain measurements reported for similar bulk single-crystal and piezoceramic compositions. Measurements of single crystal actuator capacitance and coupling coefficient are also provided. These properties were poorly predicted using scaled bulk material dielectric and coupling coefficient data. Rules-of-mixtures calculations of the effective elastic properties of the single crystal device and estimated actuation work energy densities are also presented. Results indicate longitudinal stiffnesses significantly lower (50% less) than either piezoceramic device. This suggests that single-crystal piezocomposite actuators will be best suited to low induced-stress, high strain and deflection applications.
The present invention relates to the field of radio-frequency (RF) waveguides. More specifically, the present invention pertains to a method and apparatus that provides ultra-low-loss RF waveguide structures targeted between approximately 300 GHz and approximately 30 THz. The RF waveguide includes a hollow core and a flexible honeycomb, periodic-bandgap structure surrounding the hollow core. The flexible honeycomb, periodic-bandgap structure is formed of a plurality of tubes formed of a dielectric material such as of low-loss quartz, polyethylene, or high-resistivity silicon. Using the RF waveguide, a user may attach a terahertz signal source to the waveguide and pass signals through the waveguide, while a terahertz signal receiver receives the signals.
The world s first silicon-based complementary metal oxide/semiconductor (CMOS) integrated-circuit voltage-controlled oscillator (VCO) operating in a frequency range around 324 GHz has been built and tested. Concomitantly, equipment for measuring the performance of this oscillator has been built and tested. These accomplishments are intermediate steps in a continuing effort to develop low-power-consumption, low-phase-noise, electronically tunable signal generators as local oscillators for heterodyne receivers in submillimeter-wavelength (frequency > 300 GHz) scientific instruments and imaging systems. Submillimeter-wavelength imaging systems are of special interest for military and law-enforcement use because they could, potentially, be used to detect weapons hidden behind clothing and other opaque dielectric materials. In comparison with prior submillimeter- wavelength signal generators, CMOS VCOs offer significant potential advantages, including great reductions in power consumption, mass, size, and complexity. In addition, there is potential for on-chip integration of CMOS VCOs with other CMOS integrated circuitry, including phase-lock loops, analog- to-digital converters, and advanced microprocessors.
Tech Briefs are short announcements of innovations originating from research and development activities of the National Aeronautics and Space Administration. They emphasize information considered likely to be transferable across industrial, regional, or disciplinary lines and are issued to encourage commercial application. Topics covered include: Measuring Low Concentrations of Liquid Water in Soil; The Mars Science Laboratory Touchdown Test Facility; Non-Contact Measurement of Density and Thickness Variation in Dielectric Materials; Compact Microwave Fourier Spectrum Analyzer; InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz; Combinatorial Generation of Test Suites; In-Phase Power-Combined Frequency Tripler at 300 GHz; Electronic System for Preventing Airport Runway Incursions; Smaller but Fully Functional Backshell for Cable Connector; Glove-Box or Desktop Virtual-Reality System; Composite Layer Manufacturing with Fewer Interruptions; Improved Photoresist Coating for Making CNT Field Emitters; A Simplified Diagnostic Method for Elastomer Bond Durability; Complex Multifunctional Polymer/Carbon-Nanotube Composites; Very High Output Thermoelectric Devices Based on ITO Nanocomposites; Reducing Unsteady Loads on a Piggyback Miniature Submarine; Ultrasonic/Sonic Anchor; Grooved Fuel Rings for Nuclear Thermal Rocket Engines; Pulsed Operation of an Ion Accelerator; Autonomous Instrument Placement for Mars Exploration Rovers; Mission and Assets Database; TCP/IP Interface for the Satellite Orbit Analysis Program (SOAP); Trajectory Calculator for Finite-Radius Cutter on a Lathe; Integrated System Health Management Development Toolkit.
An improved photon-emission-microscope (PEM) instrumentation system has been developed for use in diagnosing failure conditions in semiconductor devices, including complex integrated circuits. This system is designed primarily to image areas that emit photons, at wavelengths from 400 to 1,100 nm, associated with device failures caused by leakage of electric current through SiO2 and other dielectric materials used in multilayer semiconductor structures. In addition, the system is sensitive enough to image areas that emit photons during normal operation.
A thermographic method has been developed for measuring temperatures at predetermined depths within dielectric material layers . especially thermal-barrier coatings. This method will help satisfy a need for noncontact measurement of through-the-thickness temperature gradients for evaluating the effectiveness of thermal- barrier coatings designed to prevent overheating of turbine blades, combustor liners, and other engine parts. Heretofore, thermography has been limited to measurement of surface and near-surface temperatures. In the thermographic method that is the immediate predecessor of the present method, a thermographic phosphor is applied to the outer surface of a thermal barrier coating, luminescence in the phosphor is excited by illuminating the phosphor at a suitable wavelength, and either the time dependence of the intensity of luminescence or the intensities of luminescence spectral lines is measured. Then an emissivity-independent surface-temperature value is computed by use of either the known temperature dependence of the luminescence decay time or the known temperature dependence of ratios between intensities of selected luminescence spectral lines. Until now, depth-penetrating measurements have not been possible because light of the wavelengths needed to excite phosphors could not penetrate thermal-barrier coating materials to useful depths. In the present method as in the method described above, one exploits the temperature dependence of luminescence decay time. In this case, the phosphor is incorporated into the thermal-barrier coat at the depth at which temperature is to be measured. To be suitable for use in this method, a phosphor must (1) exhibit a temperature dependence of luminescence decay time in the desired range, (2) be thermochemically compatible with the thermal-barrier coating, and (3) exhibit at least a minor excitation spectral peak and an emission spectral peak, both peaks being at wavelengths at which the thermal-barrier coating is transparent or at least translucent. Conventional thermographic phosphors are not suitable because they are most efficiently excited by ultraviolet light, which does not penetrate thermal- barrier coating materials. (Typical thermal-barrier coating materials include or consist of various formulations of yttria-stabilized zirconia.) Only a small fraction of phosphor candidates have significant excitation at wavelengths long enough (>500 nm) for sufficient penetration of thermal-barrier coatings. One suitable phosphor material . yttria doped with europium (Y2O3:Eu) . has a minor excitation peak at 532 nm and an emission peak at 611 nm. In experiments, this material was incorporated beneath a 100-microns-thick thermal-barrier coating and subjected to excitation and measurement by the luminescence-decay-time technique. These experiments were found to yield reliable temperature values up to 1,100 C. At the time of reporting the information for this article, a search for suitable phosphors other than (Y2O3:Eu) was continuing.
A multi-layer film-stack and method for forming the multilayer film-stack is given where a series of alternating layers of conducting and dielectric materials are deposited such that the conducting layers can be selectively addressed. The use of the method to form integratable high capacitance density capacitors and complete the formation of an integrated power system-on-a-chip device including transistors, conductors, inductors, and capacitors is also given.
A set of deep charging tests has been carried out by NASA's Marshall Space Flight Center on subscale flight-like samples developed by Space Systems/Loral, LLC. The samples, which included solar array wire coupons, a photovoltaic cell coupon, and a coaxial microwave transmission cable, were placed in passive and active (powered) circuit configurations and exposed to electron radiation. The energy of the electron radiation was chosen to deeply penetrate insulating (dielectric) materials on each sample. Each circuit configuration was monitored to determine if potentially damaging electrostatic discharge events (arcs) were developed on the coupon as a result of deep charging. The motivation for the test, along with charging levels, experimental setup, sample details, and results will be discussed.
NASA analyzes, tests, packages, and fabricates electrical, electronic, and electromechanical (EEE) parts used in space vehicles. One area that NASA wishes to advance is energy storage and delivery. Currently, space vehicles use rechargeable batteries that utilize silver zinc or lithium ion electrochemical processes. These current state-of-the-art rechargeable batteries cannot be rapidly charged, contain harmful chemicals, and suffer from early wear-out mechanisms. A solid state ultracapacitor is an EEE part that offers significant advantages over current electrochemical and electrolytic devices. The objective of this research is to develop an internal barrier layer ultracapacitor (IBLC) using novel dielectric materials as a battery replacement with a focus on these advantages: longer life, lower mass-toweight ratio, rapid charging, on-demand pulse power, improved on-pad standby time without maintenance, and environmental friendliness. The approach is unique in two areas. A deposition technique is used that has been shown to produce a more uniformly coated nanoparticle than sol-gel, which has resulted in colossal permittivities. These particles are then distributed in an ink formulation developed at NASA Marshall Space Flight Center (MSFC) and deposited utilizing a 3D aerosol jet technique. This additive manufacturing technique controls layer thickness, resulting in extremely large capacitance and energy density.
Systems and methods in accordance with embodiments of the invention implement micro- and nanoscale capacitors that incorporate a conductive element that conforms to the shape of an array elongated bodies. In one embodiment, a capacitor that incorporates a conductive element that conforms to the shape of an array of elongated bodies includes: a first conductive element that conforms to the shape of an array of elongated bodies; a second conductive element that conforms to the shape of an array of elongated bodies; and a dielectric material disposed in between the first conductive element and the second conductive element, and thereby physically separates them.
A photonic waveguide choke includes a first waveguide flange member having periodic metal tiling pillars, a dissipative dielectric material positioned within an area between the periodic metal tiling pillars and a second waveguide flange member disposed to be coupled with the first waveguide flange member and in spaced-apart relationship separated by a gap. The first waveguide flange member has a substantially smooth surface, and the second waveguide flange member has an array of two-dimensional pillar structures formed therein.
The next planned NASA mission to visit Jupiter is known as the Europa Mission. The objective of this mission concept is to enter orbit around Jupiter in order to conduct multiple close flybys of the icy moon Europa. After careful trade studies, the mission designers have selected solar arrays as the baseline power system for the proposed mission rather than more traditional radioisotope thermoelectric generators. In order to examine the risk of using solar arrays, a series of tests were devised to determine the response of a typical solar array coupon to energetic electrons. Test coupons were fabricated and exposed to electrons ranging from 10 keV to 100 keV, at 1 nA/cm2, while being held at both room and cryogenic temperatures and exposed to end of mission radiation levels. While under electron bombardment, electrical discharges were observed and recorded with the majority of discharges occurring with electron energies of 25 keV. The largest effects on discharge size and rate were the decrease in temperature and the reduction of dielectric material on the sample surface. These tests indicate that solar array panels could be used by the planned Europa Mission in the Jovian environment, but that electrostatic discharges could be expected on the carbon composite solar arrays.
Non-volatile memory technology as defined by NAND architecture flash memory continues to lead the process scaling and device shrinking efforts of the entire integrated circuit industry. 45- nm technology nodes are now producing commercial 32Gb devices. These latest 32Gb devices are pioneering new charge trapping memory cell technologies using metal gates and high-k dielectric materials. These cells are called TANOS and consist of tantalum-nitride, aluminum oxide (high k material), nitride, oxide, and silicon. Such high-density memories continue to revolutionize commercial electronics in terms of new high-speed data architectures and significant reductions in overall power and weight consumption. In stark contrast, nearly all science-based interplanetary and earth-orbiting NASA spacecraft are still designing in and around mid-1980s-level non-volatile technology with 1Mb Electrically Erasable Read-Only Memory (EEPROM) devices. NASA has typically shunned the use of modern flash devices because of radiation and reliability concerns due to the commercial-offthe– shelf (COTS) nature of the NAND flash technology. Given the significant potential increases in overall system capability these modern flash devices could bring to NASA missions, it is important to continue to investigate these devices. This report will investigate certain portions of the reliability performance of NAND flash devices, specifically the disturb properties. Understanding the possible limitations such new non-volatile memory technology presents to NASA is the goal of this report.
NASA is committed to landing the first woman and first person of color on the Moon by 2025 to begin a sustaining presence. A major component of this mission is NASA’s orbiting lunar outpost, Gateway, that will be subjected to the harsh environment of space during its 7-day orbit around the Moon. One aspect of this environment that is not well quantified is microscopic lunar regolith particles, or simply, lunar dust. As Apollo 17 Mission Commander Eugene Cernan said, “I think dust is probably one of our greatest inhibitors to a nominal operation on the moon. I think we can overcome other physiological or physical or mechanical problems except dust” [1]. These dust particles, most of which are smaller than the width of two human hairs and of highly irregular shape, are composed mainly of dielectric materials. Such characteristics can allow the dust particles to collect electric charge from the surrounding environment, resulting in electrostatic interactions between the dust, electromagnetic fields, and electrically charged surfaces [2-3]. Due to the nature of these fields, dust can collect on and contaminate charged surfaces. Lunar dust introduced into the Gateway environment by a lunar ascent vehicle element returning from the surface of the Moon presents risks to Gateway hardware such as radiators, solar arrays, antennae, and docking mechanisms. To quantify this risk and inform NASA, International Partner, and Commercial Provider stakeholders, Booz Allen, in partnership with NASA, is developing a toolset to model the interaction of charged lunar dust particles with the cis-lunar and deep-space environments. This includes a comprehensive physics model of the space plasma and solar radiation environment and electromagnetic interaction of spacecraft and lunar dust. Spacecraft charging and plasma environment are solved using the open-source code from The French Aerospace Lab (ONERA) and the European Space Agency (ESA), known as Spacecraft Plasma Interaction Software (SPIS) [4]. The physics of particle charging and motion is handled by a time-dependent implementation of Orbital-Motion-Limited (OML) theory which accounts for plasma flows and positive potential grains [5-7], using Siemens STAR-CCM+ as the framework. Model validation includes lab experiments by NASA experts and academia, as well as future on-orbit dust detecting payloads on the exterior of Gateway and Commercial Lunar Payload Services (CLPS) missions to the lunar surface [7-9]. The results and analyses will inform Gateway Program system owners at risk for lunar dust contamination.
An optical device includes a titanium dioxide substrate layer on a quartz base of a substrate. The substrate is configured to focus light in visible wavelength spectrum of 400 nm to 700 nm. The substrate comprises a first zone and a second zone. In some embodiments, the first zone and the second zone are concentric circles. A plurality of resonators are disposed on the substrate, the plurality of resonators comprising a first plurality corresponding to the first zone and a second plurality corresponding to the second zone. Each resonator is comprised of a dielectric material with a defined thickness “t” in the range of 30 nm to 300 nm. Each resonator has a radius “r” in the range of 30 nm to 300 nm and a gap “g” between adjacent resonators in the range of 5 nm to 200 nm. The first plurality of resonators in the first zone have a first radius within a first radius range that is different from a second radius range of the second plurality of resonators in the second zone. The plurality of resonators form a metasurface that defines at least in part an ultra-thin achromatic lens of the optical device.