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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Electronic Structure of the Au Nanoparticle-TiO 2 Heterojunction: Influence of Nanoparticle Size, Shape, Oxygen Vacancies, and Temperature

The electronic structure of the gold nanoparticle-titanium dioxide (AuNP-TiO 2 ) heterojunction plays a critical role for charge transfer and recombination dynamics that underpin its photocatalytic function. However, building a representative model to capture the key physics remains a significant challenge. Here, we investigate the influence of the AuNP size and shape, as well as oxygen vacancy (V O ) defects at the anatase-phase TiO 2 (101) surface and the temperature of the heterojunction, on its interfacial electronic properties. Using density functional theory (DFT), we compare the closed-shell Au 20 and open-shell Au 19 clusters interfaced with pristine and V O defect TiO 2 surfaces. We find that the presence of a V O defect transforms pure TiO 2 from a p-type to an n-type semiconductor, reversing the interfacial band bending from downward to upward. For the heterosystem, density of states (DOS) analysis shows that V O minimally affects the open-shell Au 19 -TiO 2 system, but it significantly alters the closed-shell Au 20 -TiO 2 system, converting it from p-type to n-type at the Γ-point at 0 K. Furthermore, ab initio molecular dynamics (AIMD) simulations at 300 K reveal significant thermal fluctuations in AuNP positions relative to the TiO 2 surface. These fluctuations result in dynamic variations in the gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) in all systems studied: Au 19 NP-Pristine TiO 2 , Au 20 NP-Pristine TiO 2 , Au 19 NP-V O defect TiO 2 , and Au 20 NP-V O defect TiO 2 . Complementary Bader charge analysis performed at both 0 K and finite-temperature AIMD snapshots supports the emergence of an upward band bending and the formation of a Schottky barrier at the V O containing heterojunctions. Notably, we find that at finite temperature, an Au atom can dynamically passivate the V O , leading to a pronounced widening of the HOMO-LUMO gap in the AuNP-V O defect TiO 2 heterojunctions. Our computational findings underscore the pivotal role of the V O defect and thermal effects in modulating interfacial band alignment, electronic states, and HOMO-LUMO gaps, providing insights for designing Au-TiO 2 heterojunctions with tailored electronic properties.

Mora Perez, Carlos [Lawrence Berkeley National Lab↗
DOE OSTI2015

Passive Tomography for Spent Fuel Verification: Analysis Framework and Instrument Design Study

The potential for gamma emission tomography (GET) to detect partial defects within a spent nuclear fuel assembly is being assessed through a collaboration of Support Programs to the International Atomic Energy Agency (IAEA). In the first phase of this study, two safeguards verification objectives have been identified. The first is the independent determination of the number of active pins that are present in the assembly, in the absence of a priori information. The second objective is to provide quantitative measures of pin-by-pin properties, e.g. activity of key isotopes or pin attributes such as cooling time and relative burnup, for the detection of anomalies and/or verification of operator-declared data. The efficacy of GET to meet these two verification objectives will be evaluated across a range of fuel types, burnups, and cooling times, and with a target interrogation time of less than 60 minutes. The evaluation of GET viability for safeguards applications is founded on a modelling and analysis framework applied to existing and emerging GET instrument designs. Monte Carlo models of different fuel types are used to produce simulated tomographer responses to large populations of “virtual” fuel assemblies. Instrument response data are processed by a variety of tomographic-reconstruction and image-processing methods, and scoring metrics specific to each of the verification objectives are defined and used to evaluate the performance of the methods. This paper will provide a description of the analysis framework and evaluation metrics, example performance-prediction results, and describe the design of a “universal” GET instrument intended to support the full range of verification scenarios envisioned by the IAEA.

spent nuclear fuel assemblies, partial defect veri↗
DOE OSTI2016

Proposal of leak path passivation for InGaN solar cells to reduce the leakage current

We propose some general ways to passivate the leak paths in InGaN solar cells and report some experimental evidences of its effectiveness. By adopting an AlOx passivation process, the photovoltaic performances of GaN pn-junctions and InGaN solar cells, grown by molecular beam epitaxy, have been significantly improved. The open circuit voltage under 1 sun illumination increases from 1.46 to 2.26 V for a GaN pn junction, and from 0.95 to 1.27 V for an InGaN solar cell, demonstrating evidence of leak path passivation (LPP) by AlOx. The proposed LPP is expected to be a realistic way to exploit the potential of thick and relaxed but defective InGaN for solar cell applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions

While the contamination of solar silicon by fast diffusing transition metals can be now limited through gettering, much attention has been drawn to the slow diffusing species, especially the early 3d and 4d elements. To some extent, hydrogen passivation has been successful in healing many deep centers, including transition metals in Si. Recent deep-level transient spectroscopy (DLTS) measurements concerning hydrogen passivation of Ti revealed the existence of at least four electrical levels related to Ti{sub i}H{sub n} in the upper-half of the gap. These findings challenge the existing models regarding both the current level assignment as well as the structure/species involved in the defects. We revisit this problem by means of density functional calculations and find that progressive hydrogenation of interstitial Ti is thermodynamically stable in intrinsic and n-doped Si. Full passivation may not be possible to attain in p-type Si as Ti{sub i}H{sub 3} and Ti{sub i}H{sub 4} are metastable against dissociation and release of bond-centered protons. All DLTS electron traps are assigned, namely, E40′ to Ti{sub i}H(-/0), E170′ to Ti{sub i}H{sub 3}(0/+), E(270) to Ti{sub i}H{sub 2}(0/+), and E170 to Ti{sub i}H(0/+) transitions. Ti{sub i}H{sub 4} is confirmed to be electrically inert.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Bulk Diffusion of Cl through O Vacancies in α-Cr 2 O 3 : A Density Functional Theory Study

Many metals form passive oxides which are broken or weakened by anionic-induced degradation leading to material failure and anionic diffusion is an important step of this degradation process. The diffusion of anionic species through oxides involves a combination of diffusion along grain boundaries, cracks, and channels, as well as bulk diffusion via point defects which is the focus of this study. Using density functional theory, we study bulk diffusion of Cl through O vacancies in α -Cr 2 O 3 as a model system for passive metal oxides. Little is known about Cl diffusion and bonding characteristics, so we benchmark our work through comparison to numerous studies on O diffusion in α -Cr 2 O 3 to analyze similarities and differences between the O and Cl diffusion in the passivation and degradation process of α -Cr 2 O 3 respectively. Unlike O diffusion, the lowest diffusion barrier for Cl is cross-plane diffusion between two (0001) planes through a vacant cation site but the much shorter in-plane diffusion path within the same coordination polyhedron has 35% higher barrier. This work provides the basis for considering the contributions of Cl bulk-diffusion in the overall diffusion kinetics of Cl through α -Cr 2 O 3 .

Oware Sarfo, Kofi↗
DOE OSTI2023

Why Increased CdSeTe Charge Carrier Lifetimes and Radiative Efficiencies did not Result in Voltage Boost for CdTe Solar Cells

After a focused effort over the last decade, order-of-magnitude improvements in doping and electro-optical characteristics (radiative efficiency, carrier lifetime, and passivation) have been reported for polycrystalline CdSeTe solar cells. Surprisingly, this did not result in higher solar cell voltages regardless of device contacting layers, absorber grading profiles, and other changes in device architecture. From detailed evaluation of radiative emission and carrier dynamics in CdSeTe heterostructures and devices, it is shown that the complexity introduced to the absorber to achieve lifetime and passivation metrics resulted in charge carrier trapping, which now negatively affects CdSeTe absorbers.

CdTe↗
DOE OSTI2017

Electrochemical Stability of Metastable Materials

We present a first-principles-based formalism to provide a quantitative measure of the thermodynamic instability and propensity for electrochemical stabilization, passivation, or corrosion of metastable materials in aqueous media. Here, we demonstrate that this formalism can assess the relative Gibbs free energy of candidate materials in aqueous media as well as their decomposition products, combining solid and aqueous phases, as a function of pH and potential. On the basis of benchmarking against 20 stable as well as metastable materials reported in the literature and also our experimental characterization of metastable triclinic-FeVO 4 , we present quantitative estimates for the relative Gibbs free energy and corresponding aqueous regimes where these materials are most likely to be stable, form inert passivating films, or steadily corrode to aqueous species. Furthermore, we show that the structure and composition of the passivating films formed on triclinic-FeVO 4 are also in excellent agreement with the Point Defect Model, as proposed by the corrosion community.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Ultrafast carrier dynamics in CuInS{sub 2} quantum dots

The ultrafast carrier dynamics in CuInS{sub 2} (CIS) quantum dots (QDs) was studied by means of femtosecond transient absorption (TA) spectroscopy. The size-dependent 1S transition energy determined from bleaching spectra is in agreement with that calculated on the finite-depth-well model in the effective mass approximation. The TA bleaching comes from filling of electron quantized levels, allowing us to know the dynamics of the 1S electron in CIS QDs. The sub-100-ps electron trapping at surface defects in bare QDs accelerates with decreasing QD size, while is effectively suppressed in well-passivated CIS/ZnS core/shell QDs.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High Performance Circuit Pastes for Solid Oxide Fuel Cell Applications: Final Technical Report

Using a combination of in-plane electrical conductivity measurements, electrical contact resistance measurements, tensile fracture tests, double shear lap fracture tests, rapid thermal cycling adhesion tests, in situ wetting angle measurements, 3D X-ray tomography, reduction-oxidation (RedOx) cycling, scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDAX), Density Functional Theory (DFT) modeling, Molecular Dynamics (MD) modeling, and Phase Field modeling, this project determined that a new brazing technique developed by the PIs (specifically the use of nickel particles to direct the wetting and spreading of molten silver) could be used to produce well-adhered, >97% dense, electrically-conductive circuits, current collectors, and/or electrical contacts on a variety of ceramic and ceramic-coated substrates (specifically lanthanum strontium manganite, yttria stabilized zirconia, sapphire, Cr2O3-passivated stainless steel, and Al2O3-passivated stainless steel). Compared to other silver-based alternatives, Ag:Ni led to less manufacturing defects and was more tolerant of the extreme environments (isothermal high-temperature aging) and occasional abuse (rapid thermal cycling and RedOx cycling) encountered during Solid Oxide Fuel Cell and/or Solid Oxide Electrolysis Cell operation. Further, in some situations (such as when to produce Ag:Ni electrical contacts to Al2O3-protected stainless steel) the Ni particles also improved operation by acting as chemical getters that removed electrically-insulating, surface-segregating substrate impurities (i.e. by lowering the contact resistance with the underlying substrate).

36 MATERIALS SCIENCE↗
DOE OSTI2016

Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO{sub 2} backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Effective Corrosion-Resistant Single-Atom Alloy Catalyst on HfO 2 -Passivated BiVO 4 Photoanode for Durable (≈800 h) Solar Water Oxidation

Green hydrogen (H 2 ) production from solar water splitting necessitates photoelectrodes with superior photoelectrochemical (PEC) activity and durability. However, surface defects and photocorrosion instability—especially at high potentials—limit PEC performance and stability. Herein, the prototypical bismuth vanadate (BiVO 4 ) photoanode is used to demonstrate a holistic approach to improve photocurrent density and long-term stability. In this approach, high surface-area nanostructuring of BiVO 4 is combined with barium (Ba) doping with semi-crystalline hafnium oxide (HfO 2 ) surface passivation and single-atom nickel platinum (NiPt) catalysts. The introduction of Ba 2+ ions into BiVO 4 increases the concentration of conductive V 4+ ions or the ratio of V 4+ ions to oxygen vacancies, avoiding V 5+ dissolution during water oxidation. The semi-crystalline HfO 2 , which serves as a passivation layer, prevents BiVO 4 photocorrosion by suppressing harmful chemical reactions when holes are transferred to the electrolyte. The synergistic use of isolated single-atom and Ni-Pt coordination improves charge transfer at the photoanode/electrolyte interface, leading to enhanced PEC kinetics and stability. As a result, a photoelectrode is demonstrated with ≈6.5 mA cm -2 at 1.23 V versus a reversible hydrogen electrode (RHE) and continuous operation for 800 h with a negligible degradation rate. This work provides a promising approach to improve photoanodes for PEC H 2 production.

08 HYDROGEN↗
DOE OSTI2018

Probing Surface Defects of InP Quantum Dots Using Phosphorus Kα and Kβ X-ray Emission Spectroscopy

Synthetic efforts to prepare indium phosphide (InP) quantum dots (QDs) have historically generated emissive materials with lower than unity quantum yields. This property has been attributed to structural and electronic defects associated with the InP core as well as the chemistry of the shell materials used to overcoat and passivate the InP surface. Consequently, the uniformity of the core–shell interface plays a critical role. Using X-ray emission spectroscopy (XES) performed with a recently developed benchtop spectrometer, we studied the evolution of oxidized phosphorus species arising across a series of common, but chemically distinct, synthetic methods for InP QD particle growth and subsequent ZnE (E = S or Se) shell deposition. XES afforded us the ability to measure the speciation of phosphorus reliably, quantitatively, and more efficiently (with respect to both the quantity of material required and the speed of the measurement) than with traditional techniques, i.e., X-ray photoelectron spectroscopy and magic angle spinning solid state nuclear magnetic resonance spectroscopy. In conclusion, our findings indicate that even with deliberate care to prevent phosphorus oxidation during InP core synthesis, typical shelling approaches unintentionally introduce oxidative defects at the core–shell interface, limiting the attainable photoluminescence quantum yields.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

A low thermal impact annealing process for SiO{sub 2}-embedded Si nanocrystals with optimized interface quality

Silicon nanocrystals (Si NCs) for 3rd generation photovoltaics or optoelectronic applications can be produced by several industrially compatible physical or chemical vapor deposition technologies. A major obstacle for the integration into a fabrication process is the typical annealing to form and crystallize these Si quantum dots (QDs) which involves temperatures ≥1100 °C for 1 h. This standard annealing procedure allows for interface qualities that correspond to more than 95% dangling bond defect free Si NCs. We study the possibilities to use rapid thermal annealing (RTA) and flash lamp annealing to crystallize the Si QDs within seconds or milliseconds at high temperatures. The Si NC interface of such samples exhibits huge dangling bond defect densities which makes them inapplicable for photovoltaics or optoelectronics. However, if the RTA high temperature annealing is combined with a medium temperature inert gas post-annealing and a H{sub 2} passivation, luminescent Si NC fractions of up to 90% can be achieved with a significantly reduced thermal load. A new figure or merit, the relative dopant diffusion length, is introduced as a measure for the impact of a Si NC annealing procedure on doping profiles of device structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Molecular Oxygen Induced in-Gap States in PbS Quantum Dots

Artificial solids composed of semiconductor quantum dots (QDs) are being developed for large-area electronic and optoelectronic applications, but these materials often have defect-induced in-gap states (IGS) of unknown chemical origin. Here we performed scanning probe based spectroscopic analysis and density functional theory calculations to determine the nature of such states and their electronic structure. We found that IGS near the valence band occur frequently in the QDs except when treated with reducing agents. Calculations on various possible defects and chemical spectroscopy revealed that molecular oxygen is most likely at the origin of these IGS. We expect this impurity-induced deep IGS to be a common occurrence in ionic semiconductors, where the intrinsic vacancy defects either do not produce IGS or produce shallow states near band edges. Ionic QDs with surface passivation to block impurity adsorption are thus ideal for high-efficiency optoelectronic device applications.

Chemistry↗
DOE OSTI2016

Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors

Hot-carrier degradation and room-temperature annealing effects are investigated in unpassivated ammonia-rich AlGaN/GaN high electron mobility transistors. Devices exhibit a fast recovery when annealed after hot carrier stress with all pins grounded. The recovered peak transconductance can exceed the original value, an effect that is not observed in control passivated samples. Density functional theory calculations suggest that dehydrogenation of pre-existing O{sub N}-H defects in AlGaN plays a significant role in the observed hot carrier degradation, and the resulting bare O{sub N} can naturally account for the “super-recovery” in the peak transconductance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Sandia National Laboratories FY20 Progress Report

The Energetic Neutrons campaign led by Sandia National Laboratories (SNL) had a successful year testing electronic devices and printed circuit boards (PCBs) under 14 MeV neutron irradiation at OMEGA. During FY20 the Energetic Neutrons campaign increased the number and complexity of experiments, continued collaborations with external organizations, and generated knowledge that supports SNL’s National Security mission. In FY20 the Energetic Neutrons campaign was executed by an early career team led by a new PI. The SNL team members were trained to take over new responsibilities during the shot day to increase the number and complexity of experiments in the campaigns. Also, in FY20 for the first time the Energetic Neutrons campaign had a graduate student contributing with pre and post-irradiation characterizations at SNL of the semiconductor devices irradiated at OMEGA. In FY20 SNL collaborated with the Air Force Nuclear Weapons Center (AFNWC) and supported experiments related to radiation effects in semiconductor devices. SNL also gave the opportunity to ride along to Los Alamos National Laboratory and multiple scientists from MIT and LLE. SNL continued using the last two generations of the Neutron Effects Diagnostics (NEDs) to field active and passive experiments but also redesigned the latest generation of the NEDs to accommodate larger components and improve the vacuum sealing as shown in figure 1a. The redesigned NEDs allowed SNL to perform active tests of a high voltage (HV) PCB for the first time at OMEGA; where signals before, during and after the irradiation were recorded. The HV PCB installed in one of the SNL NEDs is shown in figure 1b where a 3D-printed nosecone was used to check for mechanical and electrical interference. Passive irradiations of multiple components were followed up with leakage current, gain measurements and radiation-induced defect characterization.

42 ENGINEERING↗