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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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329 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

MAP Propulsion System Thermal Design

The propulsion system of the Microwave Anisotropy Probe (MAP) had stringent requirements that made the thermal design unique. To meet instrument stability requirements the system had to be designed to keep temperatures of all components within acceptable limits without heater cycling. Although the spacecraft remains at a fixed 22 sun angle at L2, the variations in solar constant, property degradation, and bus voltage range all significantly affect the temperature. Large portions of the fuel lines are external to the structure and all components are mounted to non-conductive composite structure. These two facts made the sensitivity to the MLI effective emissivity and bus temperature very high. Approximately two years prior to launch the propulsion system was redesigned to meet MAP requirements. The new design utilized hardware that was already installed in order to meet schedule constraints. The spacecraft design and the thermal requirements were changed to compensate for inadequacies of the existing hardware. The propulsion system consists of fuel lines, fill and drain lines/valve, eight thrusters, a HXCM, and a propulsion tank. A voltage regulator was added to keep critical components within limits. Software was developed to control the operational heaters. Trim resistors were put in series with each operational heater circuits and the tank survival heater. A highly sophisticated test program, which included real time model correlation, was developed to determine trim resistors sizes. These trim resistors were installed during a chamber break and verified during thermal balance testing.

Mosier, Carol L.↗
NASA NTRS2013

Are Soft Short Tests Good Indicators of Internal Li-ion Cell Defects?

The self discharge test at full state of charge, may not be a good one to detect subtle defects since the li-ion chemistry has the highest self discharge at full state of charge. One should characterize self discharge versus storage time for each cell manufacturer/design to differentiate between normal self discharge and that due to a subtle manufacturing defect. The various soft short test methods indicate that if this test is carried out at full discharge (0% SOC) with all capacity removed (by lowering the current load in a stepwise manner to the same end of discharge voltage), then the cells need to be placed in storage for more than 72 hours to get a good analysis on the presence of subtle defects since it takes more than 72 hours to achieve voltage stabilization. If the cells are to be charged up even to a small percentage (ex. 1%), 72 hours are sufficient to determine issues. However, the pass/fail criteria should be based on a valid OCV decline. Less than 10 mV voltage decline is not a good method to detect subtle defects. As mentioned in the first bullet, self discharge is a competing reaction when a charge is introduced and hence a characterization of the self discharge versus storage time is required to fully correlate voltage decline to a failure due to a subtle defect. Soft short test method cannot be relied on for defect detection because cells with and without voltage decline seemed to have similar defects and characteristics. Screening methods such as internal resistance and capacity as well as a 3-sigma range for OCV, mass and dimensions should be used to screen out outliers. A very critical aspect in the understanding of subtle defects is to carry out destructive analysis of cells from every lot to confirm the quality of production and screen all cells and batteries in a stringent manner to have a high quality set of flight cells. Self Discharge Test: Fully charged cells shall be placed in Open circuit stand for 72 hours (OCV measurement twice a day); continue for total of 14 days with 1 reading per day 2. Soft Short Test 1: Fully charge; cells discharged to manufacturer's end of disch. Voltage (EODV) cutoff at C/5 rate; stand for 30 minutes; discharge with C/500 to the same EODV. stand for another 30 minutes; discharge the cells again using C/1000 current to the same EODV. OCV measurements twice a day for 72 hours and then for total of 14 days (data collection same as in 1.) 3. Soft Short Test 2: Fully charge; cells discharged to the manuf. EODV with a C/13 constant current; provide a 10 hour rest, discharge again to the same EODV with a current of C/250, provide a 10 hour rest, discharge again using a C/250 rate, provide a 24 hour rest, charge using C/250 to 3.15 V (for ~12 hours). OCV measurements twice a day for at 72 hours. (data collection same as in 1.) 4. Soft Short Test 3: Fully charge; cells shall be discharged using C/10 current to manuf. EODV. Allow the cell to remain at Open circuit for 10 seconds. Discharge the cell at C/20 rate to the same EODV, hold open circuit for 24 hours. Discharge the cells at C/200 rate to the same end of voltage cutoff and hold open circuit for 24 hours. Discharge the cells one more time at C/200 rate to the same EODV and hold open circuit for 36 hours. Charge at C/200 rate to 3.15 V and hold for 3 days. Record OCV during the open circuit stand periods every 12 hours and at the beginning and end of the 3 day hold (include the 12 hour OCV recording during this time also). Capacity Cycling: Cells with declining voltages - one cell from each manufacturer chosen for cycling Destructive Physical Analysis (DPA): Cells with and without decline chosen from each lot for DPA.

Jeevarajan, J.↗
NASA NTRS1995

A Micromechanical INS/GPS System for Small Satellites

The cost and complexity of large satellite space missions continue to escalate. To reduce costs, more attention is being directed toward small lightweight satellites where future demand is expected to grow dramatically. Specifically, micromechanical inertial systems and microstrip global positioning system (GPS) antennas incorporating flip-chip bonding, application specific integrated circuits (ASIC) and MCM technologies will be required. Traditional microsatellite pointing systems do not employ active control. Many systems allow the satellite to point coarsely using gravity gradient, then attempt to maintain the image on the focal plane with fast-steering mirrors. Draper's approach is to actively control the line of sight pointing by utilizing on-board attitude determination with micromechanical inertial sensors and reaction wheel control actuators. Draper has developed commercial and tactical-grade micromechanical inertial sensors, The small size, low weight, and low cost of these gyroscopes and accelerometers enable systems previously impractical because of size and cost. Evolving micromechanical inertial sensors can be applied to closed-loop, active control of small satellites for micro-radian precision-pointing missions. An inertial reference feedback control loop can be used to determine attitude and line of sight jitter to provide error information to the controller for correction. At low frequencies, the error signal is provided by GPS. At higher frequencies, feedback is provided by the micromechanical gyros. This blending of sensors provides wide-band sensing from dc to operational frequencies. First order simulation has shown that the performance of existing micromechanical gyros, with integrated GPS, is feasible for a pointing mission of 10 micro-radians of jitter stability and approximately 1 milli-radian absolute error, for a satellite with 1 meter antenna separation. Improved performance micromechanical sensors currently under development will be suitable for a range of micro-nano-satellite applications.

Barbour, N.↗
NASA NTRS2012

Characterization of the Vectron PX-570 Crystal Oscillator for Use in Harsh Environments

Computing hardware, data-acquisition systems, communications systems, and many electronic control systems require well-controlled timing signals for proper and accurate operation. These signals are, in most cases, provided by circuits that employ crystal oscillators due to availability, cost, ease of operation, and accuracy. In some cases, the electronic systems are expected to survive and operate under harsh conditions that include exposure to extreme temperatures. These applications exist in terrestrial systems as well as in aerospace products. Well-logging, geothermal systems, and industrial process control are examples of ground-based applications, while distributed jet engine control in aircraft, space-based observatories (such as the James Webb Space Telescope), satellites, and lunar and planetary landers are typical environments where electronics are exposed to harsh operating conditions. To ensure these devices produce reliable results, the digital heartbeat from the oscillator must deliver a stable signal that is not affected by external temperature or other conditions. One such solution is a recently introduced commercial-off-the-shelf (COTS) oscillator, the PX-570 series from Vectron International. The oscillator was designed for high-temperature applications and as proof, the crystal oscillator was subjected to a wide suite of tests to determine its ruggedness for operation in harsh environments. The tests performed by Vectron included electrical characterization under wide range of temperature, accelerated life test/aging, shock and vibration, internal moisture analysis, ESD threshold, and latch-up testing. The parametric evaluation was performed on the oscillator's frequency, output signal rise and fall times, duty cycle, and supply current over the temperature range of -125 C to +230 C. The evaluations also determined the effects of thermal cycling and the oscillator's re-start capability at extreme hot and cold temperatures. These thermal cycling and restart tests were performed at the NASA Glenn Research Center. Overall, the crystal oscillator performed well and demonstrated very good frequency stability. This paper will discuss the test procedures and present details of the performance results.

Li, Jacob↗
NASA NTRS2005

Making AlN(x) Tunnel Barriers Using a Low-Energy Nitrogen-Ion Beam

A technique based on accelerating positive nitrogen ions onto an aluminum layer has been demonstrated to be effective in forming thin (<2 nm thick) layers of aluminum nitride (AlN(x)) for use as tunnel barriers in Nb/Al-AlN(x)/Nb superconductor/insulator/ superconductor (SIS) Josephson junctions. AlN(x) is the present material of choice for tunnel barriers because, to a degree greater than that of any other suitable material, it offers the required combination of low leakage current at high current density and greater thermal stability. While ultra-thin AlN films with good thickness and stoichiometry control are easily formed using techniques such as reactive molecular beam epitaxy and chemical vapor deposition, growth temperatures of 900 C are necessary for the dissociative adsorption of nitrogen from either nitrogen (N2) or ammonia (NH3). These growth temperatures are prohibitively high for the formation of tunnel barriers on Nb films because interfacial reactions at temperatures as low as 200 to 300 C degrade device properties. Heretofore, deposition by reactive sputtering and nitridation of thin Al layers with DC and RF nitrogen plasmas have been successfully used to form AlN barriers in SIS junctions. However, precise control over critical current density Jc has proven to be a challenge, as is attaining adequate process reproducibility from system to system. The present ion-beam technique is an alternative to the plasma or reactive sputtering techniques as it provides a highly controlled arrival of reactive species, independent of the electrical conditions of the substrate or vacuum chamber. Independent and accurate control of parameters such as ion energy, flux, species, and direction promises more precise control of film characteristics such as stoichiometry and thickness than is the case with typical plasma processes. In particular, the background pressure during ion-beam nitride growth is 2 or 3 orders of magnitude lower, minimizing the formation of compounds with contaminants, which is critical in devices the performance of which is dictated by interfacial characteristics. In addition, the flux of incoming species can be measured in situ using ion probes so that the dose can be controlled accurately. The apparatus used in the present ion-beam technique includes a vacuum chamber containing a commercial collimated- ion-beam source, a supply of nitrogen and argon, and an ion probe for measuring the ion dose. Either argon or nitrogen can be used as the feed gases for the ion source, depending on whether cleaning of the substrate or growth of the nitride, respectively, is desired. Once the Nb base electrode and Al proximity layer have been deposited, the N2 gas line to the ion beam is vented and purged, and the ion-source is turned on until a stable discharge is obtained. The substrate is moved over the ion-beam source to expose the Al surface layer to the ion beam (see figure) for a specified duration for the formation of the nitride tunnel barrier. Next, the Nb counter-electrode layer is deposited on the nitride surface layer. The Nb/Al- AlN(x)/Nb-trilayer-covered substrate is then patterned into individual devices by use of conventional integrated-circuit processing techniques.

Kaul, Anupama↗