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At least 343 records · Page 19

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DOE OSTI2022

GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment

Traditional mesa terminations require precise angle design to reduce the electric field at the edge and surface treatment to reduce etch damage. Otherwise, the device usually suffers a premature breakdown. This work proposes the use of easy-to-implement hydrogen plasma treatment to solve the premature breakdown caused by mesa and demonstrates the avalanche capability in GaN-on-GaN p-i-n diodes. The breakdown electric field when the avalanche occurred was ∼2.3 MV/cm at room temperature for a GaN drift layer with a doping concentration of ∼7 × 1015 cm−3, which is consistent with the theoretical value. The temperature coefficient of the avalanche breakdown voltage of the devices was 4.64–4.85 × 10−4 K−1. This work shows a simple and effective approach to achieve avalanche capability in vertical GaN power devices, which can serve as an important reference for the future development of efficient and robust GaN power electronics.

Fu, Kai (ORCID:0000000294057512)↗

DOE OSTI2023

7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management

Devices based on gallium nitride (GaN) have great potential for high power switching applications due to the high breakdown field and high electron mobility. In this work, we present a vertical GaN-on-GaN PN power diode using high dielectric constant material, BaTiO3, for electrical field management and high breakdown voltages, in together with an optimized guard-ring and field plate design. Numerical simulation shows that with high-k dielectrics implemented, the peak electrical field at the PN interface is mitigated from 3.5 to 3.1 MV/cm under a reverse bias of −9.05 kV. The device design with BaTiO3 shows a breakdown voltage of 9.65 kV or about 600 V improvement. The fabricated diodes with a 57 μm thick drift layer demonstrate a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mΩ cm2 and a Baliga figure of merit of 22 GW/cm2.

Physics↗

DOE OSTI2024

Toroidal injection angle dependence of EC assisted plasma initiation at DIII-D

An experimental scan of the electron cyclotron waves (EC) toroidal injection angle in plasma breakdown is performed at the DIII-D tokamak. The second harmonic, extraordinary mode EC is used for the study. The dependence of n e and T e on the EC injection angle cannot be conclusively drawn from this study due to the large error bars in the n e and T e measurements. On the other hand, high T e data points are observed in some discharges which can be explained by nonlinear heating. The D α emission measurement shows a clear relation between the breakdown time and the injection angle. An experimental investigation of the cause of the dependence of breakdown delay on the EC injection angle suggests that when the injection angle is oblique, the EC heating after the reflection at the inboard wall may become ineffective and cause the breakdown delay even when the EC heating before and directly upon injection remains effective. A preliminary run of the heat and transport balance code DYON indicates that the obtained dataset is suitable for a quantitative validation of EC absorption models.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2021

Wear in particle based CSP systems from particle abrasion and attrition at high temperature

High temperature particle-based receivers offer distinct advantages over conventional molten salt receivers due to their ability to achieve temperatures above 700 ºC, direct absorption of solar energy as they fall through a beam of concentrated sunlight, and the relative ease of storage (and retrieval using a secondary working fluid) in insulated storage tanks. The use of particles, however, also raises concerns with material degradation from the flow of hot or cold particles through discharge hoppers or along the inner receiver surfaces and other system components (e.g. tubes, valves etc.), depending on operating mode of the receiver. The flow of particles over surfaces may result in loss of material from abrasive wear, impact erosion from impingement under gravitational fall and particle attrition as particles fall and move on top of each other. In the present study, the performance of candidate materials and particles were evaluated through a series of abrasion erosion and particle attrition experiments at room temperature as well as at 800 °C. Candidate materials were subject to abrasive wear from particles at low particle to material velocities inside a resistance heated kiln, and analyzed for changes in mass and surface morphology using cross-sectional scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS) tests. The wear rate for different specimens was noted to be largely driven by the strength of chromia scales built on the specimens from exposure to high temperature. Particle attrition measurements explored the susceptibility of particles to breakdown from particle to particle interaction and the generation of fines from this process. At the low velocities expected in particle based CSP plants, the particles tested exhibited near negligible breakdown. However, changes in the particle hardness at 800 ºC resulted in a significantly higher particle breakdown to sizes <40 microns raising potential environmental concerns. In addition to particle breakdown, it was also noted that the sample had oxides from the stainless steel test setup mixed in with the particles. Similar oxides can be expected to turn up in the utility scale particle based CSP plants as well. The presence of oxide was also noted to affect the solar absorptivity of the mixture compared to a clean initial specimen, potentially resulting in a change in the overall efficiency of the CSP plant.

14 SOLAR ENERGY↗

DOE OSTI2022

Foam Fracturing Study for Stimulation Development of Enhanced Geothermal Systems

The large thermal gradients and high subsurface temperatures of the western region of the U.S. hold great potential for the implementation of enhanced geothermal systems (EGS). The development of these potential EGS resources requires stimulation of the reservoir to enhance permeability and it has been widely reported that a substantial amount of water will be required should conventional hydraulic stimulation be used. This presents a huge challenge and a high risk to the geothermal development because the water stress1 in these areas is already high or extremely high. The use of foam, a gas/liquid mixture predominantly composed of gas, in fracturing is considered and explored in this project as a potential approach to address water concerns with hydraulic stimulation in the development of EGS. This project, led by Oak Ridge National Laboratory (ORNL) in collaboration with Temple University, was awarded in an open lab call in 2018, and was part of the DOE GTO waterless stimulation initiative. The goal of the project was to demonstrate the feasibility of foam fracturing for EGS development through two primary tasks: Task 1: Laboratory study of the effectiveness of foam fracturing for representative geological materials, including cyclic pressurization using foam (led by ORNL) and Task 2: High temperature foam material selection and characterization (led by Temple University). In FY19, ORNL finished the critical review on serval issues associated with foam fracturing and the implementation of the proposed tasks in a lab study (Wang, et al., 2019), and completed the foam fracturing testing using cement as a model material (Wang, et al, 2020a). The work at ORNL was geared up to develop a brand-new foam testing system in FY20. The purchase of main components for the new system was finished in the first half of the FY20. The assembly of the foam testing system and foam fracturing testing were completed in the second half of the FY20 (Wang, et al., 2021a). Task 1 required the development of a test system which can be used to perform hydraulic fracturing of geological specimens with both water and foamed liquids at pressure up to 6,000 psi (41.4 MPa). The system possesses several capabilities that conventional injection systems lack for hydraulic fracturing. In addition to its ability to generate foam with controlled quality, it is capable of cycling pressure levels between specified values up to frequencies of 50 Hz. The latter capability was developed to evaluate the hypothesis that cyclic loading of samples would produce enhanced fracturing. The system consists of two sections: one for foam generation and another for foam injection. The foam is generated through separate control and pressurization of liquid and gas phases with controlled flow rates. The injection section is equipped with a low-flow Coriolis flow that monitors the density of foam to ensure the injection is in the range of target foam quality2. Experimental results of foam fracturing are reported for cylindrical granite specimens using water and aqueous N2 foam as the fracturing fluids. All experiments were performed for unconfined conditions. The effects of injection mode (i.e., monotonic vs cyclic pressurization) on breakdown pressure and failure response sample were investigated using water alone as a fracturing fluid and foams with a range of compositions. It was found that in the case of monotonic injection, the breakdown pressure of granite specimens tended to be slightly higher when fracturing with foam. Additionally, with a foam quality of 90%, the water use can be reduced by 50 to 84%, depending on hole size. On the other hand, it was observed that the breakdown pressure can be brought down to 70% of the monotonic breakdown pressure by using low cycle fatigue. Finally, discussions are presented regarding injectivity and water use reduction.

15 GEOTHERMAL ENERGY↗

DOE OSTI2020

AMPPED LDRD: Advanced Models of the Physics & Phenomena of Electrical Discharge.

This Laboratory Directed Research and Development (LDRD) project aimed at addressing an unmet need for physics-based models that enable prediction of electrical breakdown in the presence of high voltage gradients and real-world environments. This project focused on understanding coupled plasma-surface feedback phenomena critical to electrical discharge processes and design of breakdown voltages, breakdown times, and breakdown paths. New secondary electron emission and coupled plasma-surface measurement methods and models were developed. Highly reproducible discharge experiments were developed to provide current-voltage data as a function of time, and methods were developed to condition electrodes for predictable discharge. To assess plasma-surface feedback mechanisms, new surface physics capabilities, including measurement systems for local and global photoemission yield and ion-induced secondary electron emission yield were developed. Discharge models were developed to incorporate these yields for predicting discharge behavior to understand influence of surface physics on discharge current and time evolution, and methods to accelerate these simulations were demonstrated. A key finding was that the initiation process of a non-vacuum discharge appears highly dependent on photoemission at the cathode. Advanced diagnostics were developed, including spatial electrical field imaging, spectroscopy of plasmas, and high-speed imaging of discharge event s in metal and dielectric environments. These diagnostics and improved electrical models are a step toward enabling quantitative design margins, assurance of safety architectures, and implementation of novel materials and technologies for wide ranging energy and electronics applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2023

Investigation of SF6 Alternatives in Spark Gap Switches for GWP Reduction

This primary purpose of this project was to evaluate alternative gas mixtures to sulfur hexafluoride (SF6) developed for high voltage power delivery applications for use in high voltage spark gap switches. These SF6 alternatives lower global warming potential emissions and enable improvements to the pressure-voltage design space. A combined experimental, computational, and theoretical study was used to quantify the impact of persistent breakdown products on the breakdown distribution of SF6-replacement gas mixtures. Viable SF6 replacements suitable for use in spark gap switches were studied to enable performance and agility improvements for next-generation pulsed power research relevant to national security missions. Experimental campaign included establishing parameters of switch gases as function of concentration. Various concentrations and pressures were tested for trends in breakdown voltage, repeatability, and durability, and breakdown constituents. A zero-dimensional plasma global model was used to simulate the plasma arc decay and recombination process in spark-gap switches relevant to the Z machine. Finally, a complete and consistent set of electron-neutral collision cross-sections for the novel insulating gas C4F7N is reported.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Scientific/Technical Report)

This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 µm or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.

20KV↗

DOE OSTI2023

20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Report)

This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower-voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 um or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV-class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2025

2 kV Al 0.64 Ga 0.36 N-channel high electron mobility transistors with passivation and field plates

Abstract High voltage (∼2 kV) Al 0.64 Ga 0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm 2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si 3 N 4 surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress.

Alam, Md Tahmidul (ORCID:000900086556839X)↗

DOE OSTI2022

Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering

GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2023

Concurrent characterization of GaN MOSHEMT gate leakage via electrical and thermoreflectance measurements

In this work, we report the first concurrent use of electrical and thermal characterization, via thermoreflectance, to analyze Time Dependent Dielectric Breakdown in GaN MOSHEMTs. Electrically stressing the devices until a failure occurs, then evaluating them via thermoreflectance, revealed a geometric dependence of the failure mode. Further, all soft breakdowns occurred at the mesa edge where the electric field strength was at its strongest, and tunneling current density was at its highest. This breakdown phenomenon at the mesa edge has been seen previously in GaN HEMTs employing a mesa architecture. Possible approaches to mitigate these failures in MOSHEMTs are proposed.

42 ENGINEERING↗

DOE OSTI2021

Lightning Current Propagation in Electrical Conduit

Investigation of lightning strikes to conductors ran through long spans of rigid steel conduit was performed. An overdamped-exponential current waveform with controlled peaks and rise rates was used to inject simulated lightning strikes. The impact of the length of wire, length of conduit, grounding location/s, and load type was investigated. Breakdown of 600 V, 12 AWG, THHN insulated wire (3.23 mm OD, 2 mm conductor diameter) was observed for voltages above 45 kV. The presence of resistive loads (between wire and ground) in excess of 20 ohms, or current rise times in excess of 5 kA/μs were found to consistently produce breakdown between wire and conduit. Practical power circuit elements such as outlets and splices were found to breakdown at voltage levels much below the wire insulation failure threshold.

47 OTHER INSTRUMENTATION↗

DOE OSTI2024

Development of AlGaN‐Based Deep‐Ultraviolet Avalanche Photodetectors—Toward Their Intrinsic Characteristics

Al 0.6 Ga 0.4 N deep‐UV p–i–n avalanche photodiodes (APDs) are demonstrated grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) c‐plane aluminum nitride (AlN) bulk substrate and fabricated both with and without an ion implantation process for mesa‐edge electric‐field termination. Three design considerations are taken into account: the optical absorption of the AlN bulk substrate, the photosensitivity of the APD, and the breakdown electric field. The MOCVD growth conditions of the AlGaN APD layers are optimized. Then, a detailed description of the seven device fabrication steps of the APDs is provided, which includes nitrogen ion implantation. The APDs fabricated by the ion implant process exhibit a dark‐current density under low reverse bias ≈1 × 10 −9 A cm −2 . This is one order of magnitude lower than the APD fabricated without ion implantation from the same wafer. The breakdown voltage of the APD is ≈−140 V. The calculated optical gain of the ion‐implanted APD beyond avalanche breakdown is ≈5.2 × 10 5 (current limited) and the device has an average zero‐bias photoresponse of ≈68 mA W −1 at a wavelength of 250 nm.

Jeong, Hoon [Department of Electronic Engineering ↗

DOE OSTI2021

Influence of the Bulk Resistivity on Silicon Heterojunction Solar Cells and Module Reliability

Recent developments in industry on surface passivation open the possibility of using less doped substrates in silicon solar cells. In this report we investigate how the bulk resistivity affects the performance of silicon cells and the reliability of modules. Herein, n- and p-type silicon heterojunction cells with bulk resistivities between 3 and 15 000 Ωcm are studied. We measure the current–voltage characteristics of n-type cells across the resistivity range, and we find comparable responses to illumination intensities between 0.1 and 1 suns. The cells with bulk resistivities over 1000 Ωcm show breakdown voltages larger than -1000 V, almost two orders of magnitude higher than in typical commercial cells. Although modules have bypass-diodes to prevent cells from going into breakdown, higher breakdown voltages can improve the reliability of modules in case of bypass-diode failure and reduce the module cost by easing the number of bypass-diodes required. Finally, the cells have been submitted to light soaking. The float-zone p-type cells with bulk resistivities over 10 000 Ωcm are less sensitive to light-induced degradation than cells with bulk resistivities below 10 Ωcm. The former show to recover few hours after light soaking, while the latter recover only after dark annealing.

14 SOLAR ENERGY↗

DOE OSTI2024

Time-dependent thermal degradation of lost circulation materials in geothermal systems

Treatment of lost circulation can represent anywhere from 5 to 25 % of the cost in drilling geothermal wells. The cost of the materials used for lost circulation treatment is less important than their effectiveness at reducing fluid losses. In geothermal systems, the high temperatures (>90 °C) are expected to degrade many commonly used lost circulation materials over time. This degradation could compromise different materials ability to mitigate fluid loss, creating more non-productive time as multiple treatments are needed, but may result in recovering desired permeability zones within the reservoir section over time. This research aimed to study how thermal degradation of eight different lost circulation materials affected their properties relevant to sealing loss zones in geothermal wells. Here, mass loss experiments were conducted with each material at temperatures of 90–250 °C for 1–42 days to measure the breakdown of the material at geothermal conditions, collecting gases during several experiments to determine the waste produced during degradation. Compaction experiments were conducted with the degraded materials to show how temperatures reduced the rigidity and increased packing of the materials. Viscosity tests were conducted to show the impact of different materials on drilling fluid rheology. Microscope observations were conducted to characterize the alterations to each material due to thermal degradation. Organic materials tend to degrade more than inorganic materials, with organics like microcellulose, cotton seed hulls and sawdust losing 30–50 % of their mass after 1 day of heating at 200 °C, while inorganics like magma fiber only lose ~5–10 % of its mass after one day of heating at 200 °C. Granular materials are the strongest when compacted despite any mass loss, while fibrous and flaky materials are fairly weak and breakdown easily under stress. The materials do not generally affect fluid rheology unless they have a viscosifying agent as part of the mixture. Microscopic analysis showed that more rigid materials like microcellulose and cedar fiber degrade in brittle manners with splitting and fracturing, while others like cotton seed hulls degrade in more ductile manners forming meshes or clumps of material. The thermal breakdown of lost circulation materials tested suggests that each material should also be classified by its degree of thermal degradability, as at certain temperatures the materials can lose the capability to bridge loss zones around the wellbore.

15 GEOTHERMAL ENERGY↗

DOE OSTI2026

Electrochemical Reactions Under Reverse Bias Create Additional Mobile Ions That Enable Hole Tunneling in Metal Halide Perovskite Diodes

Gradual reverse-bias breakdown in metal-halide perovskite diodes and solar cells is thought to originate from hole tunneling through steep bands in an ionic depletion region near the electron-transport layer after positively charged iodine vacancies accumulate near the hole-transport layer (HTL). However, typical reported mobile-ion concentrations near 1 x 10^17 cm-3 are too small to quantitatively explain significant tunneling-current densities and (Zener) breakdown observed near -5 V. Here, we show that inferred mobile-ion concentrations increase by more than 100x, to over 1 x 10^18cm-3 , within just 3 min of reverse bias at -6.0 V in p-i-n perovskite diodes. We attribute this increase to iodide oxidation and coupled iodine vacancy creation that must be balanced by reduction reactions near the HTL. Sub-optimal HTL coverage leads to direct contact between the transparent conducting electrode and perovskite, facilitates reduction events, enables the creation of even larger inferred mobile-ion concentrations (~1 x 10^19cm-3 ), and leads to faster degradation under reverse bias. This explains previous work that showed increased breakdown voltages and improved reverse-bias stability by implementing thick, uniform HTLs.

14 SOLAR ENERGY↗

DOE OSTI2022

Dynamics and bifurcations of laminar annular swirling and non-swirling jets

This paper presents bifurcation analyses characterising the nonlinear dynamics of fully developed laminar annular jets with respect to the centrebody diameter ${ {d}}$ , Reynolds number ${ {Re}}$ , and swirl ratio ${ {S}}$ . Similar flows appear in numerous applications and feature a vibrant range of topological and dynamical characteristics associated with phenomena including shear layer separation and vortex breakdown. Our results begin by describing the non-monotonic evolution of the axisymmetric jet's steady topology under varying ${ {S}}$ . In accord with earlier reports, the jet progresses through a sequence of wake, breakdown and wall jet regimes in a qualitatively similar manner across a wide span of ${ {d}}$ and ${ {Re}}$ values. In the wake regime, the non-swirling jet bifurcates to a plane-symmetric, but not axisymmetric, steady flow pattern beyond a ${ {d}}$ -dependent critical ${ {Re}}$ value. With further increase in ${ {Re}}$ , the steady non-swirling jet destabilises subsequently via multiple distinct Hopf bifurcations. Introducing ${ {S}}>0$ to the jet also induces unsteadiness by twisting the singly azimuthally periodic ( $|m|=1$ ) asymmetric wake structure and causing it to precess periodically in time about the central axis. Intermediate swirl stabilises this unsteady dynamics and restores the jet's axisymmetry. This stabilising effect is then reversed in the breakdown regime at higher ${ {S}}$ , where a variety of different $|m|=1$ and $|m|=2$ instabilities bifurcate from the steady flow as ${ {S}}$ is increased. Several instances of hysteresis and subcritical behaviour are reported and discussed, including one that manifests precessing vortex core oscillations.

Douglas, Christopher M. (ORCID:0000000259683315)↗