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At least 343 records · Page 19

All sources NASA NTRS DOE OSTI

NASA NTRS2000

High Voltage Design Concepts for Launch Vehicles and Orbital Spacecraft Applications

With the advent of design concepts such as, electromechanical actuation and "more electric" initiatives, has come the need for electrical power buses and electronic equipment to operate at higher than normal dc voltages to meet power requirements while keeping current levels to manageable levels. This new bus voltage has been typically 270 Volts dc nominal for launch vehicles, and 120 Volt dc for the International Space Station. This paper will discuss the new design applications for high voltage dc power in existing and future launch vehicles and spacecraft and the potential problems associated therewith. These new applications must be operational from lift-off, ascent, on orbit and descent in all of the pressure and temperature conditions for each, i.e. through the "Paschen region" twice. This paper will also attempt to stimulate an interest in the academic and professional communities to support and conduct research needed for design data applicable to high voltage dc usage.

Hall, David K.↗

DOE OSTI2023

Radiation Effects Model for Ultra-Thin Silicon Solar Cells

This work is focused on investigation of radiation effects in Ultra-Thin Silicon solar cells with a particular emphasis on electron irradiation. The study is motivated by the application of these solar cells, developed by Solestial, Inc., for powering space missions, including those led by NASA, the Department Of Defence (DOD), and commercial satellite missions. Our research encompasses both experimental and theoretical approaches, addressing unique challenges posed by ultra-thin solar cell technology that deviates from the traditional models. From the experimental point of view, the test structures were irradiated with 1 MeV electrons up to the fluence of 1E+15 e/cm$^{2}$. Radiation effects due to accumulated electron dose were noticed as a drop in open-circuit voltage (Voc). An analytical expression for modeling the Voc characteristic of the UT-Si cell after exposure to electron irradiation was formulated and subsequently compared with experimental data. The theoretical foundation of the proposed approach builds upon the Non-Ionising Energy Loss (NIEL) concept, a fundamental parameter in addressing radiation damage modelling and survivability predictions.

Fedoseyev, Alex↗

NASA NTRS1994

Ilmenite as Dual-Use Material

This paper addresses the subject of dual-use space technology transfer of a novel, non-traditional material termed ilmenite, found in a large percentage in the moon rocks brought back by NASA's APOLLO missions. The paper is somewhat premature in the sense that though the material as a mineral has been known for a long time, very little is known about pure single crystal ilmenite and hence few applications have been demonstrated. Yet, in another sense, it is very timely due to the fact that ilmenite promises to be a very interesting competition to silicon, silicon carbide and other compound semiconductors, especially those that are employed in high power, high temperature and large data storage/retrieval applications. It seems to be an excellent example of a small investment-high return situation. While some of the applications of this material - for production of oxygen, for instance - have been well-known, electronic applications have received relatively little attention. One reason for this was the fact that growth of single crystal ilmenite requires precise process conditions and parameters. We believe for the first time these have been determined in the Center for Electronic Materials, Texas A&M University. The work being done at Texas A&M University and Prairie View A&M University (supported by Battelle Pacific Northwest Laboratories and the Center for Space Power) indicates the excellent potential this material has in space as well as in terrestrial applications. To mention a few: as a wide band gap semiconductor it has applications in high temperature, high power situations, especially when heat dissipation is a problem such as may occur in the Space Station; the possibility of this material radiating in the blue region, it has immense applications in optoelectronics; as a material with a high density of highly directional d-bands, it lends itself to novel processing conditions and perhaps even to 'tunability' of physical parameters; as a potential scintillating material, it has possible applications as a sensor in waste management; as an oxygen sensor it has possible applications in automotive electronics; and as a radiation resistant material, it has obvious applications in the space environment. Results - experimental and theoretical - obtained so far in our laboratories will be reported with particular emphasis on the transfer of technology involving this fascinating material.

Kumar, A. A.↗

NASA NTRS2001

Silicon Carbide Electronic Devices

The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

Neudeck, P. G.↗

NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗

NASA NTRS1997

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗

DOE OSTI2020

Advances in High-Power Wireless Charging Systems: Overview and Design Considerations

Wireless charging systems are foreseen as an effective solution to improve the convenience and safety of conventional conductive chargers. As this technology has matured, recent broad applications of wireless chargers to electrified transportation have indicated a trend toward higher power, power density, modularity, and scalability of designs. In this article, commercial systems and laboratory prototypes are reviewed, focusing mostly on the advances in high-power wireless charging systems. The recent endeavors in magnetic pad designs, compensation networks, power electronics converters, control strategies, and communication protocols are illustrated. Both stationary and dynamic (in-motion) wireless charging systems are discussed, and critical differences in their designs and applications are emphasized. On that basis, the comparisons among different solutions and design considerations are summarized to present the essential elements and technology roadmap that will be necessary to support large-scale deployment of high-power wireless charging systems. The review is concluded with the discussion of several fundamental challenges and prospects of high-power wireless power transfer (WPT) systems. Foreseen challenges include utilization of advanced materials, electric and electromagnetic field measurement and mitigation, customization, communications, power metering, and cybersecurity.

25 ENERGY STORAGE↗

NASA NTRS1972

Electrothermal oscillations and the quasilinear theory of electron enthalpy fluctuations in magnetohydrodynamic generators and magnetoplasmadynamic arc thrusters

Flucturations in electron density and temperature coupled through OHM's Law are studied for MHD power generator and MPD arc thruster applications. The dispersion relation based on linear theory is derived, and the two limiting cases of infinite ionization rate and frozen flow are examined. The nonlinear effects of the frozen flow case are then studied in the quasilinear limit. Equations are derived for the amplitude of the fluctuation and its effect upon Ohm's Law and the electron temperature equation. Conditions under which a steady state can exist in the presence of the fluctuation are examined, and effective transport properties are determined.

Smith, J. M.↗

DOE OSTI2020

System-Level Thermal Management and Reliability of Automotive Electronics: Goals and Opportunities Using Phase-Change Materials

Abstract Electronic packaging for automotive applications are at particular risk of thermomechanical failure due to the naturally harsh conditions it is exposed to. With the rise of electric and hybrid electric vehicles (EVs and HEVs), combined with a desire to miniaturize, the challenge of removing enough heat from electronic devices in automotive vehicles is evolving. This paper closely examines the new challenges in thermal management in various driving environments and aims to classify each existing cooling method in terms of performance. Particular focus is placed upon emerging solutions regarded to hold great potential, such as phase-change materials (PCMs). PCMs have been regarded for some time as a means of transferring heat quickly away from the region with the electronic components and are widely regarded as a possible means of carrying out cooling in large scale from small areas, because of their high latent heat of fusion, high specific heat, temperature stability, and small volume change during phase change, etc. They have already been utilized as a method of passive cooling in electronics in various ways, but their adoption in automotive power electronics, such as in traction inverters, has yet to be fulfilled. A brief discussion is made on some of the potential areas of application and challenges relating to more widespread adoption of PCMs, with reference to a case study using computational model of a commercially available power module used in automotive applications.

Engineering↗

DOE OSTI2025

Room-temperature multiferroicity in sliding van der Waals semiconductors with sub-0.3 V switching

The search for van der Waals (vdW) multiferroic materials has been challenging but also holds great potential for the next-generation multifunctional nanoelectronics. The group-IV monochalcogenide, with an anisotropic puckered structure and an intrinsic in-plane polarization at room temperature, manifests itself as a promising candidate with coupled ferroelectric and ferroelastic order as the basis for multiferroic behavior. Unlike the intrinsic centrosymmetric AB stacking, we demonstrate a multiferroic phase of tin selenide (SnSe), where the inversion symmetry breaking is maintained in AA-stacked multilayers over a wide range of thicknesses. We observe that an interlayer-sliding-induced out-of-plane (OOP) ferroelectric polarization couples with the in-plane (IP) one, making it possible to control out-of-plane polarization via in-plane electric field and vice versa. Notably, thickness scaling yields a sub-0.3 V ferroelectric switching, which promises future low-power-consumption applications. Furthermore, coexisting armchair- and zigzag-like structural domains are imaged under electron microscopy, providing experimental evidence for the degenerate ferroelastic ground states theoretically predicted. Non-centrosymmetric SnSe, as the first layered multiferroic at room temperature, provides a novel platform not only to explore the interactions between elementary excitations with controlled symmetries, but also to efficiently tune the device performance via external electric and mechanical stress.

Chen, Rui [University of California, Berkeley, CA ↗

NASA NTRS1976

The irregularity spectrum in interstellar space

Published data on the interstellar scintillations of three pulsars are analyzed using a theory based on the Markov approximation for strong scintillations. The data are found to be consistent with either a Gaussian or Kolmogorov-like power-law irregularity spectrum for the interstellar material. For two of the pulsars, application of the Kolmogorov power law suggests the presence of regions of larger than normal electron density between us and the pulsar. The parameters of the deduced power-law spectrum are considered with independent measures of the large-scale structures of the gas and indicate the possibility of a broadly turbulent interstellar medium with a Kolmogorov-like spectrum.

Lee, L. C.↗

NASA NTRS1982

Phase control and beam steering of semiconductor laser arrays

The operational principles and a possible device configuration of one dimensional monolithically integrated semiconductor laser arrays are described. The output beam of the array can be electronically steered. Devices of the type can find applications in optical communication systems where the power levels needed are above the capability of a single laser device.

Katz, J.↗

DOE OSTI2022

A review of active probing-based system identification techniques with applications in power systems

System identification is becoming a relevant research area for numerous applications in power grids due to the increasing complexity of the system. A paradigm shift in power system infrastructure driven by renewable energy resources, controllable loads, and new power electronics technologies have given rise to new challenges in power systems operation and control. This increased complexity of power systems and unavailability of physics-based models of most inverter-based resources requires that traditional modeling of power systems approaches be complemented by system identification-based black or grey box modeling techniques. In light of the importance of system identification and little attention paid to the applications of these techniques in transforming power systems, this paper provides a comprehensive review of active probing-based system identification methods in the context of power system applications. It reviews applications of both linear and nonlinear system identification with discussion on their potential and key takeaways. To motivate a further practical use in power systems, the paper provides an example of system identification, to develop a state space model of an unknown plant with step-by-step details. The paper highlights the advantages of using modern power electronics-based sources in the identification process and discusses the emerging research directions for future.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2023

High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application

This paper reports on the demonstration of microwave power performance at 30 GHz on InAlN/GaN metal–insulator–semiconductor high electron mobility transistor (MISHEMT) on silicon substrate by using the Hf 0.5 Zr 0.5 O 2 (HZO) as a gate dielectric. Compared with Schottky gate HEMT, the MISHEMT with a gate length (L G ) of 50 nm presents a significantly enhanced performance with an ON/OFF current ratio (I ON /I OFF ) of 9.3 × 10 7 , a subthreshold swing of 130 mV dec -1 , a low drain-induced barrier lowing of 45 mV V -1 , and a breakdown voltage of 35 V. RF characterizations reveal a current gain cutoff frequency (f T ) of 155 GHz and a maximum oscillation frequency (f max ) of 250 GHz, resulting in high (f T × f max ) 1/2 of 197 GHz and the record high Johnson's figure-of-merit (JFOM = f T × BV) of 5.4 THz V among the reported GaN MISHEMTs on Si. Further, the power performance at 30 GHz exhibits a maximum output power of 1.36 W mm -1 , a maximum power gain of 12.3 dB, and a peak power-added efficiency of 21%, demonstrating the great potential of HZO/InAlN/GaN MISHEMTs for the Ka-band application.

42 ENGINEERING↗

DOE OSTI2026

Design of a 915 MHz conduction-cooled cryomodule

High-power, compact, continuous-wave (CW) linear electron accelerators with beam energies of up to 10 MeV are being considered for possible industrial applications. Conduction-cooled, superconducting radio-frequency (SRF) technology allows operating such machines at high electrical efficiency, thereby reducing the operating cost significantly. A prototype conduction-cooled SRF cryomodule has been designed and components are currently being manufactured. The cryomodule features a two-cell, 915 MHz SRF cavity, two cryocoolers, a fundamental power coupler, two magnetic shields, a thermal shield and warm-to-cold transitions. The cryomodule has been designed to be able to provide an energy gain of 3.5 MeV to a CW electron beam with a current of 5 mA. This contribution focusses on thermal and mechanical design aspects of the cryomodule.

Ciovati, G. [Old Dominion Univ., Norfolk, VA (Unit↗

DOE OSTI2025

Design of a 915 MHz conduction-cooled cryomodule

Ciovati, G. [Old Dominion Univ., Norfolk, VA (Unit↗

DOE OSTI2021

A study on the creep behavior of alloy 709 using in-situ scanning electron microscopy

In this research, an experimental evaluation of creep properties of Alloy 709 in the temperature range of 750–850 °C was undertaken. Alloy 709 is a novel austenitic stainless steel with 20% Cr and 25% Ni by wt% that was developed for application in structural components of nuclear power plants. Creep rupture tests were conducted in an in-situ heating-loading and Scanning Electron Microscope (SEM) unit equipped with Electron Backscatter Diffraction (EBSD) detector and Energy Dispersive Spectroscopy (EDS). “Real-time” creep damage mechanisms of Alloy 709 at various stresses and temperatures using a flat, un-notched sample with continuously reducing cross-section is studied so that the failure and maximum creep damage occurred at the center of the sample where the in-situ SEM imaging could be focused. Accelerated creep tests at temperatures and stresses above service conditions were performed by employing multiple blocks of constant loads where the loads were increased once the sample attained constant creep rate, indicating a secondary creep regime. This technique ensures multiple data points can be obtained from the same test, saves the time required for an otherwise long-term creep test and usage of SEM. Further, Coincident Site Lattice (CSL) boundary maps were collected as control maps before testing, and the grain boundaries were observed during the creep test to understand the effect of grain boundary character on the creep damage mechanism. Void growth, grain boundary separation, and sliding were found to be the main creep mechanisms whose rate is dependent on stress and temperature. Failure mechanisms studied on the fracture surface using SEM fractography were correlated to the sample surface observations to create complementary information to better understand the underline creep mechanism of Alloy 709.

36 MATERIALS SCIENCE↗

DOE OSTI2025

First-Principles Simulations Correlating X-ray Absorption Spectroscopy Features to Point Defects in h -BN

Hexagonal boron nitride (h-BN) is a promising material for a range of emerging applications in electronics, quantum information technology, and energy storage. Soft X-ray absorption spectroscopy (XAS) is powerful to reveal atomic details of BN, especially in the presence of defects. However, correlating XAS spectral features with specific defect types remains elusive. In this Letter, we report B K-edge XAS measurements of sputter-deposited turbostratic h-BN films and use a combination of first-principles spectroscopic simulations and analysis of detailed electronic structure and local charge transfer characteristics to elucidate their unique spectroscopic features. Our results show that the two main defect-related peaks, between the main π* resonances of h-BN and B2O3, as typically observed in BN films deposited by energetic condensation or bombarded with energetic ions, are associated with electronic states of H-passivated B atoms bonded to one and two oxygen impurity atoms, respectively. These conclusions hold significant implications for applications relying on defect-mediated properties of h-BN.

chemical structure↗