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At least 343 records · Page 19

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DOE OSTI2022

GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment

Traditional mesa terminations require precise angle design to reduce the electric field at the edge and surface treatment to reduce etch damage. Otherwise, the device usually suffers a premature breakdown. This work proposes the use of easy-to-implement hydrogen plasma treatment to solve the premature breakdown caused by mesa and demonstrates the avalanche capability in GaN-on-GaN p-i-n diodes. The breakdown electric field when the avalanche occurred was ∼2.3 MV/cm at room temperature for a GaN drift layer with a doping concentration of ∼7 × 1015 cm−3, which is consistent with the theoretical value. The temperature coefficient of the avalanche breakdown voltage of the devices was 4.64–4.85 × 10−4 K−1. This work shows a simple and effective approach to achieve avalanche capability in vertical GaN power devices, which can serve as an important reference for the future development of efficient and robust GaN power electronics.

Fu, Kai (ORCID:0000000294057512)↗

NASA NTRS2010

Investigation of a Gallium MPD Thruster with an Ablating Cathode

Arc impedance, exhaust velocity, and plasma probe measurements are presented. The thruster is driven by a 50 microsecond pulse from a 6.2 milliohm pulse forming network, and gallium is supplied to the discharge by evaporation of the cathode. The arc voltage is found to vary linearly with the discharge current with an arc impedance of 6.5 milliohms. Electrostatic probes yield an exhaust velocity that is invariant with the discharge current and has a peak value of 20 kilometers per second, which is in reasonable agreement with the value (16 plus or minus 1 kilometer per second) calculated from the mass bit and discharge current data. Triple probe measurements yield on axis electron temperatures in the range of 0.8-3.8 eV, electron densities in the range of 1.6 x 10(exp 21) to 2.1 x 10(exp 22) per cubic meter, and a divergence half angle of 16 degrees. Measurements within the interelectrode region yield a peak magnetic field of 0.8 T, and the observed radial trends are consistent with an azimuthally symmetric current distribution. A cathode power balance model is coupled with an ablative heat conduction model predicting mass bit values that are within 20% of the experimental values.

Thomas, Robert E.↗

NASA NTRSDate not supplied

Summary of Shock Wave Turbulent Boundary Layer Interaction Experiments In a Circular Test Section

A series of experiments were performed at Mach 2.5 in a 17 cm diameter circular test section to characterize an impinging/reflected shock wave turbulent boundary layer interaction generated by a cone-cylinder centerbody. The cone-cylinder centerbody generates a conical shock wave that interacts with the naturally occurring boundary layer developing on the test section wall. Three different cone angles were used in the experiment to study unseparated, incipiently separated, and separated interactions. When the cone-cylinder centerbody is positioned on the centerline, a flowfield which is two-dimensional in the mean is generated. Three dimensional interactions were also created by offsetting the cone-cylinder centerbody from the test section centerline. The results are intended to provide benchmark quality datasets for computational fluid dynamics (CFD) validation without the pitfalls inherent in rectangular configurations where corner effects prohibit a truly two-dimensional flow in the mean. The experimental measurements included surface flow visualization, wall static pressure, flowfield Pitot tube pressure, constant-voltage anemometry (CVA) normal hot-wire, and particle image velocimetry (PIV) measurements. The hot-wire measurements were used to calculate mean mass flux and total temperature profiles, mass flux and total temperature turbulence intensities, and the mass flux-total temperature correlation. The PIV measurements provide three-dimensional mean velocity measurements. Agreement between the pressure, hot-wire, and PIV measurements is established in the undisturbed upstream flowfield.

Supersonic↗

NASA NTRSDate not supplied

Summary of Shock Wave Turbulent Boundary Layer Interaction Experiments in a Circular Test Section

compressible flow↗

DOE OSTI2026

Measurement of the Dispersion in the CeC Beamlines

The coherent electron cooling requires to match the relativistic factors of the hadron and electron beam within 10 -4 accuracy. Initial matching is based on the energy measurement of the electron beam using solenoid with accuracy about 10 -3 (the hadron relativistic factor can be found from the revolution frequency). Further matching is done with observation of the recombination rate with fine tuning based on the cooling rate. The last two steps require change of the electron energy which is achieved by change of the linac voltage. The interaction of the hadron and electron beams is affected by the transverse overlap of two beams. To minimize the effect, we need zero dispersion in the common section. The merge of the beams a dogleg transfer line is used containing two dipoles and three quadrupoles. The zeroing of dispersion is performed by settings of the quadrupoles. We have developed two ways to measure the dispersion. In the first mostly commonly used we change both dipoles by the same value creating the mismatch between the electron energy and bending magnet. In the compensated dogleg the position in the second dipole should not change, and the trajectory angle will change by the same amount as deflecting angle but in opposite direction. Therefore, the trajectory in the common section will not change. The value of the dispersion can be calculated from the beam displacement divided by the relative chang of the dipoles’ current. The second method is based on the change of the electron beam energy using linac. This method requires electron orbit alignment with linac axis to avoid beam steering. The results are shown in Fig.1 and Fig. 2. The first figure shows the dispersion prior the correction, and the second figure after the correction.

43 PARTICLE ACCELERATORS↗

DOE OSTI2023

Exploration of a Novel Technique for Waste Heat Recovery Through Molecular Dynamics: Influence of Wettability and Electric Field on Water and Water-Based Nanofluids

Most of the energy produced globally comes by way of a heat engine. The Carnot principle places a limit as to how thermodynamically efficient a heat engine can be. There is no heat engine that can be 100% thermodynamically efficient and as such a substantial proportion of all heat supplied to a heat engine is lost as waste heat. Waste heat therefore is a large energy source ready to be properly utilized. Herein, a novel approach for converting waste heat to electricity is discussed. It involves the use of the liquid to vapor phase change of a material dielectric (water) or electrolyte (nanofluid) in the embodiment of a capacitor for direct thermal to electrostatic energy conversion. While this method of waste heat recovery could potentially be added to the ever expanding portfolio of energy conversion techniques, a number of aspects must be addressed before it can be brought into practice. Water was seen as an ideal dielectric phase change material given its high relative permittivity ratio when in the liquid form as compared to its vapor form. However, given its short voltage holdoff time the phase change of water would need to occur rapidly. This brings up concerns of explosive boiling. Herein, molecular dynamics analysis into the explosive boiling behavior of thin water films gave more insight into how the interaction between the surface and liquid affected explosive boiling onset time. A Lennard-Jones potential with one interaction site and a Morse potential with three interaction sites between water and solid substrate were used. It was found generally that a stronger interaction between water film and substrate led to faster explosive boiling onset times but an increase in the number of interaction sites delayed explosive boiling, even at the same wettability (contact angle). Understanding changes in the density and enthalpy of vaporization of a liquid dielectric such as water in the presence of an electric field is of importance due to the electrostatic nature of the waste heat conversion method under consideration. Specifically, if both density and enthalpy of vaporization are increased, the thermodynamic efficiency of the waste heat conversion method under consideration is decreased. Electric field effects are explored herein via molecular dynamics using two water models, the TIP4P-Ew and SWM4-NDP. The SWM4-NDP model is polarizable while the TIP4P-Ew model is not, which allows for a determination of the importance of model polarizability (i.e. variation in water model dipole moment) on these two properties of water when subjected to an electric field. Herein it was found that both water models respond similarly in terms of density and vaporization enthalpy variance upon the introduction of an electric field. Comparison was also made to the pressure induced by the electric field (electrostriction pressure) by way of a density comparison and it was found that the predicted electrostriction pressure overestimates the pressure experienced by water. Water by itself has a high enthalpy of vaporization, which limits the efficiency of the newly proposed conversion method. Research both experimental and through simulation has shown that the vaporization enthalpy of nanofluids can be engineered via nanoparticle size and material selection. An avenue less explored is manipulating the enthalpy of vaporization by altering the interaction strength between the nanoparticles and the base fluid. In practice this could be achieved through the addition of coatings to the nanoparticles to alter their wettability to the base fluid. This was explored by using a Lennard-Jones potential and Morse potential to model the interaction between base fluid (water) and the nanoparticle. For nanoparticles 2nm in diameter and at weight percentages up to 6%, the change in vaporization enthalpy due to alterations of the interaction strength between nanoparticle and base fluid was not significant (less than a 1% difference) when compared to the effect of altering the weight percentage of nanoparticles in the nanofluid or introducing an electric field. However, the effect of wettability may still become important at other nanoparticle concentrations and sizes. In all, the studies presented here further the understanding of phase change and thermodynamic properties of water and water based nanofluids under an electrostatic field which will help inform the development of a novel approach to waste heat conversion. The reduction of waste heat will improve energy sustainability outlooks.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2022

Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

Vertical gallium nitride (GaN) p-n diodes have garnered significant interest for use in power electronics where high-voltage blocking and high-power efficiency are of concern. In this article, we detail the growth and fabrication methods used to develop a large area (1 mm 2 ) vertical GaN p-n diode capable of a 6.0-kV breakdown. We also demonstrate a large area diode with a forward pulsed current of 3.5 A, an 8.3-mΩ$\cdot$cm 2 differential specific ON-resistance, and a 5.3-kV reverse breakdown. In addition, we report on a smaller area diode (0.063 mm 2 ) that is capable of 6.4-kV breakdown with a differential specific ON-resistance of 10.2 mΩ$\cdot$cm 2 , when accounting for current spreading through the drift region at a 45° angle. Finally, the demonstration of avalanche breakdown is shown for a 0.063-mm 2 diode with a room temperature breakdown of 5.6 kV. In this work, these results were achieved via epitaxial growth of a 50-μm drift region with a very low carrier concentration of <1×10 15 cm –3 and a carefully designed four-zone junction termination extension.

42 ENGINEERING↗

NASA NTRS2009

Small Deflection Energy Analyzer for Energy and Angular Distributions

The development of the Small Deflection Energy Analyzer (SDEA) charged-particle spectrometer for energy and angle distributions responds to a longstanding need to measure the wind velocity vector in Earth s thermosphere, and to obtain the ion-drift vector in the ionosphere. The air and ions above 120 km are endowed with bulk velocities and temperatures just like air near the ground, but with separate spatial and temporal variations. It is important to understand these not only for study of the physics and chemistry of the Sun-Earth connection, but also for spacecraft orbit predictions, and communications through the ionosphere. The SDEA consists of a pair of parallel conducting plates separated by a small distance, with an entrance slit on one end, and an exit slit on the other. A voltage applied to these plates develops an electric field between the plates, and this field deflects ions passing through it. If an ion has too little energy, it will strike one of the plates. If it has too much, it will strike the back wall. An ion with the amount of energy being searched for will have its trajectory bent just enough to exit the back slit. The SDEA units are compact, rectangular, and operate with low voltages. The units can be built up into small arrays. These arrays could be used either to widen the field of view or to sharpen an existing one. This approach can also be used to obtain angular distributions in two planes simultaneously, thus cutting down the ion source power requirements in half. This geometry has enabled a new mass-spectrometer concept that can provide miniaturized mass spectrometers for use in industrial plants, air-pollution monitoring, and noxious-gas detection.

Herrero, Federico A.↗

DOE OSTI2022

Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering

GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2021

Mimicking associative learning using an ion-trapping non-volatile synaptic organic electrochemical transistor

Associative learning, a critical learning principle to improve an individual’s adaptability, has been emulated by few organic electrochemical devices. However, complicated bias schemes, high write voltages, as well as process irreversibility hinder the further development of associative learning circuits. Here, by adopting a poly(3,4-ethylenedioxythiophene):tosylate/Polytetrahydrofuran composite as the active channel, we present a non-volatile organic electrochemical transistor that shows a write bias less than 0.8 V and retention time longer than 200 min without decoupling the write and read operations. By incorporating a pressure sensor and a photoresistor, a neuromorphic circuit is demonstrated with the ability to associate two physical inputs (light and pressure) instead of normally demonstrated electrical inputs in other associative learning circuits. To unravel the non-volatility of this material, ultraviolet-visible-near-infrared spectroscopy, X-ray photoelectron spectroscopy and grazing-incidence wide-angle X-ray scattering are used to characterize the oxidation level variation, compositional change, and the structural modulation of the poly(3,4-ethylenedioxythiophene):tosylate/Polytetrahydrofuran films in various conductance states. The implementation of the associative learning circuit as well as the understanding of the non-volatile material represent critical advances for organic electrochemical devices in neuromorphic applications.

42 ENGINEERING↗

NASA NTRS1961

A Satellite Borne Cadmium Sulfide Total Corpuscular Energy Detector

The properties of single crystals of cadmium sulfide as radiation detectors are described. It has been found possible to select crystals such that: (a) The ratio of increase of conductivity under irradiation to the rate of absorption of energy in the crystal is substantially independent of particle energy (over the examined ranges of 500 ev to 80 kev for electrons and 5 kev to 180 kev for protons) and of the magnitude of energy flux (over the range from.005 to 10 ergs/cm(sup 2 -sec); and (b) The above ration is substantially the same for protons, electrons, alpha particles, x-rays, and gamma-rays. For a driving voltage of 100 volts, typical crystal yield currents of 10(sup -7) to 10(sup- 6) amperes for each erg/cm(sup 2-sec) of energy absorbed by the crystal. The threshold of such crystal detectors (resulting from dark currents of the order of 10(sup 10 amp) is typically 10(sup -3) ergs/cm(sup 2- sec). For the selected crystals a response-temperature coefficient of -0.25% per degree centigrade is found for the temperature range -50 deg C to + 50 deg C. A description is given of a complete CdS total corpuscular energy detector for the study of geomagnetically trapped radiation by means of a satellite. The detector described has a dynamic range great than 10(sup 4), a solid angle of 10(exp -3) steradian, and a detection threshold of approximately 1 erg/cm(sup 2-sec-sterad). A similar detector employing a small magnet for the selective exclusion of electrons is also described. Noteworthy practical features of these detectors for satellite and space probe experiments are: (a) Use of bare crystals, without covering foils, in order to detect charged particles having energies as low as hundreds of electron volts. (b) Simplicity of electronic auxiliaries. (c) Compactness, lightweight and nechanical ruggedness. (d) Low electrical power requirements; and (e) Conversion of conduction current to the rate of a twostate relaxation oscillator in order to facilitate telemetric transmission of data. A pair of such detectors was flown as part of the s-46 satellite payload on March 23, 1960, but due to vehicular failure an orbit was not achieved and the operation of the CdS detectors was observed for only, six minutes of flight.

Freeman, John W.↗

NASA NTRS2005

Development of a Spectral Model Based on Charge Transport for the Swift/BAT 32K CdZnTe Detector Array

The properties of 32K CdZnTe (4 x 4 sq mm large, 2 mm thick) detectors have been studied in the pre-flight calibration of the Burst Alert Telescope (BAT) on-board the Swift Gamma-ray Burst Explorer (scheduled for launch in November 2004). In order to understand the energy response of the BAT CdZnTe array, we first quantify the mobility-lifetime (mu tau) products of carriers in individual CdZnTe detectors, which produce a position dependency in the charge induction efficiency and results in a low energy tail in the energy spectrum. Based on a new method utilizing (57)Co spectra obtained at different bias voltages, the mu tau for electrons ranges from 5.0 x 10(exp -4) to 1.0 x 10(exp -2) sq cm/V while the mu tau for holes ranges from 1.3 x 10(exp -5 to 1.8 x 10(exp -4) sq cm/V. We find that this wide distribution of mu tau products explains the large diversity in spectral shapes between CdZnTe detectors well. We also find that the variation of mu tau products can be attributed to the difference of crystal ingots or manufacturing harness. We utilize the 32K sets of extracted mu tau products to develop a spectral model of the detector. In combination with Monte Carlo simulations, we can construct a spectral model for any photon energy or any incident angle.

Sato, Goro↗

DOE OSTI2023

Second-harmonic signature of chiral spin structures in W/Pt/Co heterostructures with tunable magnetic anisotropy

Abstract Second-harmonic Hall voltage (SHV) measurement method has been widely used to characterize the strengths of spin–orbit torques (SOTs) in heavy metal/ferromagnet thin films saturated in the single-domain regime. Here, we show that the magnetic anisotropy of a W/Pt/Co trilayer can be robustly tuned from in-plane to out-of-plane by varying W, Pt, or Co thicknesses. Moreover, in samples with easy-cone anisotropy, SHV measurements exhibit anomalous ‘humps’ in the multidomain regime accessed by applying a nearly out-of-plane external magnetic field. These hump features can only be explained as a result of the formation of Néel-type domain walls, efficiently driven by nevertheless small SOTs in this double heavy metal heterostructure with canceling spin Hall angles.

Physics↗

NASA NTRS2011

HIWRAP Radar Development for High-Altitude Operation on the NASA Global Hawk and ER-2

The NASA High-Altitude Imaging Wind and Rain Airborne Profiler (HIWRAP) is a solid-state transmitter-based, dual-frequency (Ka- and Ku-band), dual-beam (30 degree and 40 degree incidence angle), conical scan Doppler radar system, designed for operation on the NASA high-altitude (20 km) aircrafts, such as the Global Hawk Unmanned Aerial System (UAS). Supported by the NASA Instrument Incubator Program (IIP), HIWRAP was developed to provide high spatial and temporal resolution 3D wind and reflectivity data for the research of tropical cyclone and severe storms. With the simultaneous measurements at both Ku- and Ka-band two different incidence angles, HIWRAP is capable of imaging Doppler winds and volume backscattering from clouds and precipitation associated with tropical storms. In addition, HIWRAP is able to obtain ocean surface backscatter measurements for surface wind retrieval using an approach similar to QuikScat. There are three key technology advances for HIWRAP. Firstly, a compact dual-frequency, dual-beam conical scan antenna system was designed to fit the tight size and weight constraints of the aircraft platform. Secondly, The use of solid state transmitters along with a novel transmit waveform and pulse compression scheme has resulted in a system with improved performance to size, weight, and power ratios compared to typical tube based Doppler radars currently in use for clouds and precipitation measurements. Tube based radars require high voltage power supply and pressurization of the transmitter and radar front end that complicates system design and implementation. Solid state technology also significantly improves system reliability. Finally, HIWRAP technology advances also include the development of a high-speed digital receiver and processor to handle the complex receiving pulse sequences and high data rates resulting from multi receiver channels and conical scanning. This paper describes HIWRAP technology development for dual-frequency operation at high-altitudes using low peak power transmitters and pulse compression. The hardware will be described along with the methods and concepts for the system design. Finally, we will present recent preliminary results from flights on the NASA Global Hawk in support of the NASA Genesis and Rapid Intensification Processes (GRIP) field campaign, and on the NASA ER-2 as fixed nadir pointing mode for the NASA Global Precipitation Measurement (GPM) ground validation (GV) mission - Midlatitude Continental Convective Cloud Experiment (MC3E)

Li, Lihua↗

NASA NTRS2008

NASA Tech Briefs, September 2008

Topics covered include: Nanotip Carpets as Antireflection Surfaces; Nano-Engineered Catalysts for Direct Methanol Fuel Cells; Capillography of Mats of Nanofibers; Directed Growth of Carbon Nanotubes Across Gaps; High-Voltage, Asymmetric-Waveform Generator; Magic-T Junction Using Microstrip/Slotline Transitions; On-Wafer Measurement of a Silicon-Based CMOS VCO at 324 GHz; Group-III Nitride Field Emitters; HEMT Amplifiers and Equipment for their On-Wafer Testing; Thermal Spray Formation of Polymer Coatings; Improved Gas Filling and Sealing of an HC-PCF; Making More-Complex Molecules Using Superthermal Atom/Molecule Collisions; Nematic Cells for Digital Light Deflection; Improved Silica Aerogel Composite Materials; Microgravity, Mesh-Crawling Legged Robots; Advanced Active-Magnetic-Bearing Thrust- Measurement System; Thermally Actuated Hydraulic Pumps; A New, Highly Improved Two-Cycle Engine; Flexible Structural-Health-Monitoring Sheets; Alignment Pins for Assembling and Disassembling Structures; Purifying Nucleic Acids from Samples of Extremely Low Biomass; Adjustable-Viewing-Angle Endoscopic Tool for Skull Base and Brain Surgery; UV-Resistant Non-Spore-Forming Bacteria From Spacecraft-Assembly Facilities; Hard-X-Ray/Soft-Gamma-Ray Imaging Sensor Assembly for Astronomy; Simplified Modeling of Oxidation of Hydrocarbons; Near-Field Spectroscopy with Nanoparticles Deposited by AFM; Light Collimator and Monitor for a Spectroradiometer; Hyperspectral Fluorescence and Reflectance Imaging Instrument; Improving the Optical Quality Factor of the WGM Resonator; Ultra-Stable Beacon Source for Laboratory Testing of Optical Tracking; Transmissive Diffractive Optical Element Solar Concentrators; Delaying Trains of Short Light Pulses in WGM Resonators; Toward Better Modeling of Supercritical Turbulent Mixing; JPEG 2000 Encoding with Perceptual Distortion Control; Intelligent Integrated Health Management for a System of Systems; Delay Banking for Managing Air Traffic; and Spline-Based Smoothing of Airfoil Curvatures.

Source record↗

DOE OSTI2026

Data for "Gold-Induced Chemical Perturbations in CdTe-Based Photovoltaic Cells"

Back contacting p-type CdTe has been identified as one of the major areas of loss in CdTe photovoltaic (PV) power conversion efficiency (PCE). In research settings, Au is a common contact material due to its ease of use and decent performance. This work provides a detailed investigation into using gold for back contacting As-doped, CdCl2 treated, polycrystalline CdTe that has been exposed to air after absorber processing, another routine practice. First, X-ray photoemission spectroscopy (XPS) is used to determine the native oxide to be 1.6 nm of CdTeO3 using a combination of angle-resolved XPS and the cadmium modified Auger parameter. During gold metallization of CdTe, oxygen and oxidized tellurium are eliminated from the thin CdTeO3 native oxide. The fate of the released oxygen and possibly cadmium and tellurium are not known, but these reaction byproducts can enter the absorber bulk or grain boundaries, stay at the interface, or dissolve in the Au. Interfacial hole barriers between CdTe and Au are measured for samples with and without the native oxide present prior to metallization. Results show that the thin CdTeO3 alleviates the downward band bending by 40 meV from 470 meV to 430 meV even though it is consumed during interface formation. The implications of these chemical reactions on the device are assessed through photoluminescence (PL) spectroscopy which shows losses in internal open circuit voltage (iVoc) from 820 meV to 795 meV, carrier lifetime from 123 ns to 45 ns, and PL quantum yield from 2.9x10-5 to 1.2x10-5. Modeling time-resolved PL lifetimes demonstrates the back surface recombination velocity due to metallization reduces minority carrier lifetimes. These results identify the native oxide and show that it plays an important role in mediating downward band bending along with how the back interface reaction can negatively impact device-scale parameters and reduce PV PCE.

14 SOLAR ENERGY↗

DOE OSTI2024

Design Principles of Diketopyrrolopyrrole‐Thienopyrrolodione Acceptor 1 –Acceptor 2 Copolymers

Abstract The design principles of acceptor 1 –acceptor 2 copolymers featuring alternating diketopyrrolopyrrole (DPP) and thienopyrrolodione (TPD) moieties are investigated. The investigated series of polymers is obtained by varying the aromatic linker between the two acceptor motifs between thiophene, thiazole, pyridine, and benzene. High electron affinities between 3.96 and 4.42 eV, facilitated by the synergy of the acceptor motifs are determined with optical gaps between 1.37 and 2.02 eV. Grazing incidence wide‐angle X‐ray scattering studies reveal a range of film morphologies after thermal annealing, including face‐on, end‐on and superstructure edge‐on‐like crystallites. Conversely, all materials form thin edge‐on layers on the polymer–air interface, as demonstrated by multi‐elemental near‐edge X‐ray absorption fine‐structure spectroscopy. The benefit of the electron‐deficient linkers thiazole and pyridine is evident: In organic field effect transistors, electron mobilities of up to 4.6 × 10 −2 cm 2 V −1 s −1 are obtained with outstanding on/off current ratios of 5 × 10 5 , facilitated by the absence of detectable hole transport in these materials. Viability for all‐polymer solar cells is assessed in active layer blends with the donor polymer PM6, yielding a maximum average power conversion efficiency of 4.8% and an open circuit voltage above 1 V.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Gold-Induced Chemical Perturbations in CdTe-Based Photovoltaic Cells

Back-contacting p-type CdTe has been identified as one of the major areas of loss in CdTe photovoltaic (PV) power conversion efficiency (PCE). In research settings, Au is a common contact material due to its ease of use and decent performance. This work provides a detailed investigation into using gold for back contacting As-doped, CdCl 2 -treated, polycrystalline CdTe that has been exposed to air after absorber processing, another routine practice. First, X-ray photoemission spectroscopy (XPS) is used to determine the native oxide to be 1.6 nm of CdTeO 3 by using a combination of angle-resolved XPS and the cadmium-modified Auger parameter. During gold metallization of CdTe, oxygen and oxidized tellurium are eliminated from the thin CdTeO 3 native oxide. The fates of the released oxygen and possibly cadmium and tellurium are not known, but these reaction byproducts can enter the absorber bulk or grain boundaries, stay at the interface, or dissolve in the Au. Interfacial hole barriers between CdTe and Au are measured for samples with and without the native oxide present prior to metallization. Results show that the thin CdTeO 3 alleviates the downward band bending by 40 meV from 470 to 430 meV even though it is consumed during interface formation. The implications of these chemical reactions on the device are assessed through photoluminescence (PL) spectroscopy, which shows losses in internal open circuit voltage (iVoc) from 820 to 795 meV, carrier lifetime from 123 to 45 ns, and PL quantum yield from 2.9 × 10 −5 to 1.2 × 10 −5 . Modeling timeresolved PL lifetimes demonstrates the back surface recombination velocity due to metallization reduces minority carrier lifetimes. These results identify the native oxide and show that it plays an important role in mediating downward band bending along with how the back interface reaction can negatively impact device-scale parameters and reduce PV PCE.

14 SOLAR ENERGY↗