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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

An Inrush Current Limiting Method for Grid-Connected Converters Considering Grid Voltage Disturbances

To support the electric power grid, some grid-connected converters are required to ride through abnormal grid conditions, including voltage disturbances. However, at the moment, when a grid voltage disturbance happens, a large inrush current could be induced due to the large difference between the grid and converter output pulsewidth modulation (PWM) voltages. This inrush current could be more severe in the faster switching SiC-based multilevel converter, which only needs a small filter inductance to meet its normal operation requirements, such as harmonics and peak ripple currents. In this article, a PWM mask method is used to limit the inrush current. With this method, the inrush current can be effectively limited to a preset value and can help the converter ride through grid voltage disturbances. Furthermore, the method is validated through experiments conducted on a single-phase SiC-based five-level converter considering low voltage, high voltage, and phase angle disturbances.

42 ENGINEERING↗
DOE OSTI2020

An In Situ Formed Surface Coating Layer Enabling LiCoO 2 with Stable 4.6 V High‐Voltage Cycle Performances

Abstract The development of high‐voltage LiCoO 2 is essential for achieving lithium‐ion batteries with high volumetric energy density, however, it faces a great deal of challenges owing to the materials, structure and interfacial instability issues. In this work, a strategy is developed, through heat annealing a precoated surface layer to in situ form a high‐voltage‐stable surface coating layer, which is demonstrated to be highly effective to improve the high‐voltage performance of LiCoO 2 . It is discovered that LiCoO 2 reacts with Li 1.5 Al 0.5 Ti 1.5 (PO 4 ) 3 (LATP) at 700 °C to form exclusively spinel phases in addition to Li 3 PO 4 , which are structurally coherent to the layered lattice of LiCoO 2 . The heat annealing of the precoated thin layer of LATP enables the formation of a high‐quality surface layer. Spinel phases possess high‐voltage‐stable structures with much weaker oxidizing ability of lattice oxygen than layered structure. In addition, the Li 3 PO 4 is a good lithium‐ion conductor with excellent chemical stability at high voltages. All these benefits contribute to the construction of a uniform and conformal high‐voltage‐stable surface layer with favorable lithium conducting kinetics at the LiCoO 2 surface. The modified LiCoO 2 shows excellent 4.6 V high‐voltage cycle performance at both room temperature and 45 °C. The thermal stability is greatly enhanced as well.

Wang, Yi↗
DOE OSTI2014

Improving the performance of stainless-steel DC high voltage photoelectron gun cathode electrodes via gas conditioning with helium or krypton

Gas conditioning was shown to eliminate field emission from cathode electrodes used inside DC high voltage photoelectron guns, thus providing a reliable means to operate photoguns at higher voltages and field strengths. Measurements and simulation results indicate that gas conditioning eliminates field emission from cathode electrodes via two mechanisms: sputtering and implantation, with the benefits of implantation reversed by heating the electrode. We have studied five stainless steel electrodes (304L and 316LN) that were polished to approximately 20 nm surface roughness using diamond grit, and evaluated inside a high voltage apparatus to determine the onset of field emission as a function of voltage and field strength. The field emission characteristics of each electrode varied significantly upon the initial application of voltage but improved to nearly the same level after gas conditioning using either helium or krypton, exhibiting less than 10 pA field emission at -225 kV bias voltage with a 50 mm cathode/anode gap, corresponding to a field strength of ~13 MV/m. Finally, field emission could be reduced with either gas, but there were conditions related to gas choice, voltage and field strength that were more favorable than others.

BastaniNejad, M.↗
DOE OSTI2023

Voltage mapping and local defects identification in solar cells using non-contact method

Electroluminescence, infrared imaging, and current–voltage curve techniques are used to detect and map underperforming cells in a photovoltaic module or the modules in a photovoltaic string. In this work, we present a non-contact electrostatic voltmeter technique to detect and map the underperforming spots in a cell and the cells in a module. This non-contact technique directly maps the charged surface voltage (671mV) of the superstrate glass, and it had an 11-mV difference with the voltmeter values (660mV). Another data set of voltage values obtained by electroluminescence images conversion into a voltage map showed a difference of 7mV with the non-contact voltmeter values. Further, the direct voltage values obtained at various good and poor-performing spots of the cells using this technique are 3.69V and 3.79V and are validated using the voltage values obtained in electroluminescence analysis and the difference in voltage obtained by the two techniques is determined to be less than 2%. In this work, we combine the strengths of two complementary techniques of the electrostatic voltmeter (strength: quantitative) and electroluminescence (strength: spatial mapping) to obtain a quantitative spatial mapping of defects. Furthermore, this work is extendable to detect the poor-performing modules in solar PV power plants.

14 SOLAR ENERGY↗
DOE OSTI2024

Coupling sensor to enzyme in the voltage sensing phosphatase

Voltage-sensing phosphatases (VSPs) dephosphorylate phosphoinositide (PIP) signaling lipids in response to membrane depolarization. VSPs possess an S4-containing voltage sensor domain (VSD), resembling that of voltage-gated cation channels, and a lipid phosphatase domain (PD). The mechanism by which voltage turns on enzyme activity is unclear. Structural analysis and modeling suggest several sites of VSD-PD interaction that could couple voltage sensing to catalysis. Voltage clamp fluorometry reveals voltage-driven rearrangements in three sites implicated earlier in enzyme activation—the VSD-PD linker, gating loop and R loop—as well as the N-terminal domain, which has not yet been explored. N-terminus mutations perturb both rearrangements in the other segments and enzyme activity. Our results provide a model for a dynamic assembly by which S4 controls the catalytic site.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Probing the initiation of voltage decay in Li-rich layered cathode materials at the atomic scale

Li-rich layered oxides hold great promise for improving the energy density of present-day Li-ion batteries. However, their application is limited by the voltage decay upon cycling, and the origin of such a phenomenon is poorly understood. A major issue is determining the voltage range over which detrimental reactions originate. In the present study, a unique yet effective approach was employed to probe this issue. Instead of studying the materials during the first cycle, electrochemical behavior and evolution of the atomic structures were compared in extensively cycled specimens under varied charge/discharge voltages. With the upper cutoff voltage lowered from 4.8 to 4.4 V, the voltage decay ceased to occur even after 60 cycles. In the meantime, the material maintained its layered structure without any spinel phase emerging at the surface, which is unambiguously shown by the atomic-resolution Z-contrast imaging and electron energy loss spectroscopy. These results have conclusively demonstrated that structural/chemical changes responsible for the voltage decay began between 4.4 and 4.8 V, where the layered-to-spinel transition was the most dramatic structural change observed. Thus, this discovery lays important groundwork for the mechanistic understanding of the voltage decay in Li-rich layered cathode materials.

25 ENERGY STORAGE↗
DOE OSTI2023

Voltage-dependent excitation dynamics in UV-absorbing organic photovoltaics with efficient charge transfer exciton emission

Intermolecular charge-transfer excitons play a central role in determining the performance of organic solar cells as their voltage-dependent formation, dissociation, and recombination dynamics contribute to photocurrent generation, radiative/nonradiative voltage losses, and photovoltaic fill factor. Here, we explore the properties of brightly-emitting wide energy gap (>2 eV) charge transfer excitons by measuring the voltage-dependent photoluminescence, photocurrent, and ultrafast pump–probe transient absorption spectra of organic solar cells employing five UV-absorbing donor molecules that differ only by the length of the oligophenylene or acene group at their core. We find that organic solar cells with a strong correlation between their voltage-dependent photocurrent and charge-transfer exciton photoluminescence have low photovoltaic fill factors as they require voltage to facilitate efficient charge-transfer exciton dissociation. In contrast, solar cells that are efficient can readily generate charges without an applied field and have a separate population of tightly-bound charge-transfer excitons that are responsible for emission. Furthermore, considering that the sum of all excitation loss rates (i.e., recombination and charge extraction) must be equal to the excitation generation rate in the steady state, these voltage-dependent data allow us to solve for the voltage-dependent fate of all excitations in the solar cells and estimate upper and lower bounds for geminate and non-geminate recombination, respectively.

14 SOLAR ENERGY↗
DOE OSTI2024

Voltage and temperature effects on low cobalt lithium-ion battery cathode degradation

Degradation of low cobalt lithium-ion cathodes was tested using a full factorial combination of upper cut-off voltage (4.0 V and 4.3 V vs. Li/Li + ) and operating temperature (25 °C and 60 °C). Half-cell batteries were analyzed with electrochemical and microstructural characterization methods. Electrochemical performance was assessed with galvanostatic cycling, cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS) supported by distribution of relaxation times (DRT) analysis. Electrode microstructure was characterized with scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray absorption near edge structure (XANES) imaging. Higher cut-off voltage cycling shows presence of NiO x formation, a low diffusivity rock-salt phase, in both CV and XRD data. XRD patterns confirmed that the rock-salt phase was beginning to form at the low cut-off voltage at high temperature, but in much lower intensity than at the high cut-off voltage. Higher temperature accelerates degradation processes at both voltages. Degradation factors at high temperature include NiO x formation, cathode material dissolution, and electrolyte decomposition. SEM analysis suggests that supporting phases may isolate and disconnect active material particles reducing capacity retention and battery life cycle. DRT analysis and XANES imaging show that both high temperature samples revealed a NiO x phase based on an increased diffusive impedance and a visible shift in the XANES spectra. The low cut-off voltage, high temperature sample showed a split peak and shift to lower energies indicating early formation of the NiO x phase. The diffusive impedance, which hinders intercalation and deintercalation, is driven by the formation of the NiO x phase. While primarily driven by cut-off voltage, elevated temperature also contributes to this degradation mechanism.

electrochemical impedance spectroscopy↗
DOE OSTI2020

Model predictive control for voltage restoration in microgrids using temporal logic specifications

Power system operation will encounter numerous voltage variabilities as the proliferation of renewable energy continues. Real-time monitoring and communication technologies can potentially improve voltage stability by enabling the rapid detection of voltage deviations and the implementation of corrective actions. These corrective actions will only be effective in restoring stability if they are chosen in a timely and scalable manner. This paper considers the problem of power systems’ load voltage control in order to simultaneously address both magnitude and time voltage specifications. In order to comply with grid codes and avoid unnecessary relay protection actions, a model predictive control (MPC)-based control strategy employing temporal logic specifications (TLSs) is proposed. The TLSs strategy is introduced as a formalism to control the voltage variation at a critical load bus against operational bounds over time. The control objective is to schedule optimal control input signals from the available supportive energy storage systems, which provide reactive power injections, leading to satisfying the specified finite-time restoration described by the TLSs with minimal control efforts. The simulation results display that the TLSs strategy for power systems’ voltage control synthesis is extremely significant.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2011

Thermoelectric conversion via laser-induced voltage in highly textured polycrystalline Na{sub x}CoO{sub 2} ceramic

We have studied and analyzed the laser-induced voltage effect in highly c-axis-oriented polycrystalline Na{sub x}CoO{sub 2}. The textured and layered stacking Na{sub x}CoO{sub 2} (x {approx} 0.7) bulks were prepared by a solid-state reaction process. Under the irradiation on Na{sub 0.67}CoO{sub 2} bulk surface with pulsed laser ({lambda} = 248 nm), the induced voltage signals were observed on the inclined surface with rise time 30 ns-43 ns and peak voltage 200 mV-500 mV; the voltage peak values show a linear dependence of laser energy densities. The crystal grains orientation plays a critical role in voltage peak value whether in film or texture bulk. The transverse voltage signal brings the information of thermoelectric anisotropy. In Na{sub x}CoO{sub 2} band structure, the Fermi surface is different in the ab plane and along the c axis, leading to anisotropy of Seebeck coefficient. Additionally, the artificial structure of the inclined surface for highly textured bulk enables us to obtain a transverse voltage on inclined surface. These results demonstrated the layered textured bulk has potential applications in waste-heat conversion via transverse thermoelectric effect.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Influence of voltage rise time on microwave generation in relativistic backward wave oscillator

In relativistic backward wave oscillators (RBWOs), although the slow wave structure (SWS) and electron beam determine the main characteristics of beam-wave interaction, many other factors can also significantly affect the microwave generation process. This paper investigates the influence of voltage rise time on beam-wave interaction in RBWOs. Preliminary analysis and PIC simulations demonstrate if the voltage rise time is moderately long, the microwave frequency will gradually increase during the startup process until the voltage reaches its amplitude, which can be explained by the dispersion relation. However, if the voltage rise time is long enough, the longitudinal resonance of the finitely-long SWS will force the RBWO to work with unwanted longitudinal modes for a while and then gradually hop to the wanted longitudinal mode, and this will lead to an impure microwave frequency spectrum. Besides, a longer voltage rise time will delay the startup process and thus lead to a longer microwave saturation time. And if unwanted longitudinal modes are excited due to long voltage rise time, the microwave saturation time will be further lengthened. Therefore, the voltage rise time of accelerators adopted in high power microwave technology should not be too long in case unwanted longitudinal modes are excited.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Piezoelectric transformers for low-voltage generation of gas discharges and ionic winds in atmospheric air

To generate a gas discharge (plasma) in atmospheric air requires an electric field that exceeds the breakdown threshold of ∼30 kV/cm. Because of safety, size, or cost constraints, the large applied voltages required to generate such fields are often prohibitive for portable applications. In this work, piezoelectric transformers are used to amplify a low input applied voltage (<30 V) to generate breakdown in air without the need for conventional high-voltage electrical equipment. Piezoelectric transformers (PTs) use their inherent electromechanical resonance to produce a voltage amplification, such that the surface of the piezoelectric exhibits a large surface voltage that can generate corona-like discharges on its corners or on adjacent electrodes. In the proper configuration, these discharges can be used to generate a bulk air flow called an ionic wind. In this work, PT-driven discharges are characterized by measuring the discharge current and the velocity of the induced ionic wind with ionic winds generated using input voltages as low as 7 V. The characteristics of the discharge change as the input voltage increases; this modifies the resonance of the system and subsequent required operating parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗
DOE OSTI2017

Bi-Directional On-Board Charger Architecture and Control for Achieving Ultra-High Efficiency with Wide Battery Voltage Range

One challenge of on board charger application is bi-directional operation. Due to the absence of reverse recovery charge and small junction capacitance, it is much easier to do bi-directional operation using wide band gap devices. Another challenge is the very wide battery voltage range. It is very difficult to optimize converter over the whole battery voltage range and efficiency drops either the battery voltage is too high or too low. In this paper, a novel two stage structure is proposed utilizing both SiC and GaN devices. Bi-directional power flow as well as zero voltage switching is achieved with the proposed structure. In addition, a variable DC-link voltage operation is adopted to deal with the wide battery voltage range so that the CLLC resonant converter can always work at its optimized point. Design considerations of the two stage on-board charger are introduced, including system structure evaluation, resonant converter design and control strategy. A 6.6kW on board charger prototype with 500kHz (300kH for AC/DC stage) switching frequency is demonstrated with 43W/in3 power density and above 96% efficiency over the whole battery voltage range.

Li, Bin↗
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities

A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.

Ga2O3 devices↗
DOE OSTI2019

Optimal Submodule Capacitor Sizing for Modular Multilevel Converters with Common Mode Voltage Injection and Circulating Current Control

Abstract - Modular multilevel converters (MMCs), with the filterless and transformer-less features, are considered as a promising topology for high-efficiency medium voltage (MV) high voltage (HV) drive systems. However, at low frequencies (< 30 Hz), a large current ripple flowing through the capacitors of each submodule will cause significant capacitor voltage fluctuation. This paper proposes an optimal submodule capacitor selection based on the common mode voltage injection. The proposed sizing model includes two functions: a) accurately estimating the capacitor voltage ripple based on the drive system parameters; and b) identifying the minimum capacitance of the submodule capacitors based on the allowed maximum capacitor voltage fluctuations. Simulation and hardware-in-the-loop (HIL) test results show that the error between the actual and estimated values of the voltage fluctuation is within 3% using the proposed model.

Capacitor Sizing↗
DOE OSTI2021

Voltage Loss Comparison in CdSe/CdTe Solar Cells and Polycrystalline CdSeTe Heterostructures

Cd(Se)Te solar cells have considerable headroom to increase voltage. Voltage losses occur due to incomplete absorption above bandgap E_g and band tail absorption below E_g; such losses are quantified using radiative voltage. The largest voltage losses are attributed to nonradiative recombination, which is quantified via carrier lifetime and radiative efficiency. We compare radiative voltage, radiative efficiency, and carrier lifetime for Cu-doped CdSe/CdTe solar cells and for undoped polycrystalline CdSeTe heterostructures passivated with Al_2O_3. Using external quantum efficiency spectrum and a CdSeTe absorption spectrum obtained from absolute photoluminescence (PL), we show that the radiative voltage is greater than 1.1 V. Time-resolved PL experiments and modeling show that a major part of voltage losses can be attributed to recombination in the absorber bulk. The front interface recombination makes a larger impact within the first few nanoseconds after pulsed excitation, and the comparison of time-gated and time-integrated PL can be used to assess relative contributions of front interface and bulk recombination rates.

14 SOLAR ENERGY↗
DOE OSTI2025

Voltage Probability Density Function Shaping Control Strategy Considering Grid Operational Uncertainties

It is well-known that power systems operation always affected by various uncertainties which make the bus voltage a random process that can be characterized by its probability density function (PDF) at any time instant. In this context, this paper presents a novel PDF-based voltage control framework for power systems. By modeling voltage as a stochastic process, we formulate a stochastic differential equationthat captures grid uncertainties. The associated Fokker-Planck-Kolmogorov equation is derived to describe the evolution of the voltage PDF, which enables the formulation of a PDF-shaping control strategy. To simplify the PDF control formulation, a B-spline neural network is introduced for real-time estimation and regulation of the voltage distribution. The proposed PDF control law updates voltage references for energy storage systems and synchronous generators using real-time PDF measurements and feedback signals. The proposed method is validated on a modified Kundur’s two-area system. Simulation results demonstrate that the controller can significantly improve the voltage stability under stochastic conditions, highlighting its effectiveness in modern inverter-rich grids.

Gui, Yonghao [ORNL] (ORCID:0000000250435534)↗