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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Demonstrating the Critical Role of Solvation in Supported Ti and Nb Epoxidation Catalysts via Vapor-Phase Kinetics

Catalytic oxidation of hydrocarbons with hydrogen peroxide (H 2 O 2 ) has been of the utmost importance for several decades. The vast majority of studies have been performed in the condensed phase, even though condensed phases introduce complex solvent effects and can promote the leaching of active sites. In response, we have built a custom reactor system to understand H 2 O 2 activation and selective oxidation in the vapor-phase. In this report, we study the epoxidation of cyclohexene with H 2 O 2 over four Lewis-acidic metal oxide catalysts: Ti and Nb grafted on SiO 2 and on the Zr based metal–organic framework, NU-1000. The M–SiO2 materials are highly selective to the formation of epoxides and diols, as they can be in the condensed phase, while the NU-1000 based materials are far more prone to overoxidation to CO 2 , which appears to be connected to their strong reactant adsorption. Apparent activation energies are calculated for all materials when operating in the same kinetic regime, and the heats of cyclohexene adsorption into their pores are then used to directly compare intrinsic enthalpies of activation in the vapor vs condensed phase for the M–SiO 2 catalysts. Nb–SiO 2 catalysts exhibit similar intrinsic enthalpies of activation in the vapor and condensed phases, whereas the condensed phase transition state in Ti–SiO 2 is 24 kJ/mol lower in energy than that of the same material in the vapor phase. These experiments establish another methodology for understanding the various roles of solvent in selective oxidation reactions and studying these reactions under conditions that differ significantly from the thousands of prior studies in the condensed phase.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Arsenic Removal by Continuous Flow-Through Iron Electrocoagulation and Downstream Steps under Environmentally Relevant Conditions

Arsenic (As) contamination in drinking water is a major health concern. This study investigated As(III) and As(V) removal by continuous flow-through iron electrocoagulation (EC) under varying iron doses and water chemistry conditions. Effective arsenic removal (>90% of 100 µg/L) was achieved with a low iron dose of 5 mg/L and a short EC reactor residence time of 11 s that was followed by flocculation and settling. Removal was primarily through adsorption of As(III) and As(V) to the EC-generated Fe(III) oxyhydroxide solids ferrihydrite and lepidocrocite. For influents containing As(III), oxidation of As(III) to As(V) also occurred. The removal processes occurred in both the EC reactor and downstream treatment. EC-generated reactive solids with high surface area and adsorption capacity provided better arsenic removal than with preformed adsorbents. The removed arsenic remained largely immobile in the EC-generated solids. The extent of arsenic removal was generally similar across pH 6 to 8. Phosphate (1 mg/L as P) inhibited the removal of both arsenic species. Dissolved silica (20 mg/L as SiO2) suppressed As(III) removal but had little effect on the amount of As(V) removed. In addition to thermodynamic effects on adsorption equilibria, pH and co-occurring phosphate and silica influenced removal rates by affecting iron oxidation, nucleation, and aggregation kinetics. The results integrate mechanistic understanding with treatment performance, providing insight relevant to both fundamental research and the application of EC in water treatment.

Arsenic, electrocoagulation, iron oxide, phosphate↗
DOE OSTI2020

Oxide-Free Three-Dimensional Germanium/Silicon Core–Shell Metalattice Made by High-Pressure Confined Chemical Vapor Deposition

Metalattices are crystalline arrays of uniform particles in which the period of the crystal is close to some characteristic physical length scale of the material. In this work, we explore the synthesis and properties of a germanium metalattice in which the similar to 70 nm periodicity of a silica colloidal crystal template is close to the similar to 24 nm Bohr exciton radius of the nanocrystalline Ge replica. The problem of Ge surface oxidation can be significant when exploring quantum confinement effects or designing electronically coupled nanostructures because of the high surface area to volume ratio at the nanoscale. To eliminate surface oxidation, we developed a coreshell synthesis in which the Ge metalattice is protected by an oxide-free Si interfacial layer, and we explore its properties by transmission electron microscopy (TEM), Raman spectroscopy, and electron energy loss spectroscopy (EELS). The interstices of a colloidal crystal film grown from 69 nm diameter spherical silica particles were filled with polycrystalline Ge by high-pressure confined chemical vapor deposition (HPcCVD) from GeH4. After the SiO2 template was etched away with aqueous HF, the Ge replica was uniformly coated with an amorphous Si shell by HPcCVD as confirmed by TEM-EDS (energy-dispersive X-ray spectroscopy) and Raman spectroscopy. Formation of the shell prevents oxidation of the Ge core within the detection limit of XPS. The electronic properties of the core-shell structure were studied by accessing the Ge 3d edge onset using STEM-EELS. A blue shift in the edge onset with decreasing size of Ge sites in the metalattices suggests quantum confinement of the Ge core. The degree of quantum confinement of the Ge core depends on the void sizes in the template, which is tunable by using silica particles of varying size. The edge onset also shows a shift to higher energy near the shell in comparison with the Ge core. This shift along with the observation of Ge-Si vibrational modes in the Raman spectrum indicate interdiffusion of Ge and Si. Both the size of the voids in the template and core-shell interdiffusion of Si and Ge can in principle be tuned to modify the electronic properties of the Ge metalattice.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Identification and Description of a Silicic Volcaniclastic Layer in Gale Crater, Mars, Using Active Neutron Interrogation

The Dynamic Albedo of Neutrons instrument aboard the Mars Science Laboratory rover, Curiosity, has been used to map a stratigraphically-conformable layer of high-SiO 2 material in Gale crater. Previous work has shown this material contains tridymite, a high-temperature/low-pressure felsic mineral, interpreted to have a volcanic source rock. We describe several characteristics including orientation, extent, hydration, and geochemistry, consistent with a volcaniclastic material conformably deposited within a lacustrine mudstone succession. Relationships with widely dispersed alteration features and orbital detections of hydrated SiO 2 suggest that this high-SiO 2 layer extends at least 17 km laterally. Mineralogical abundances previously reported for this high-SiO 2 material indicated that hydrous species were restricted to the amorphous (non-crystalline) fraction, which is dominated by SiO2. The low mean bulk hydration of this high-SiO 2 layer (1.85 ± 0.13 wt.% water-equivalent hydrogen) is consistent with silicic glass in addition to opal-A and opal- CT. Persistent volcanic glass and tridymite in addition to opal in an ancient sedimentary unit indicates that the conversion to more ordered forms of crystalline SiO 2 has not proceeded to completion and that this material has had only limited exposure to water since it originally erupted, despite having been transported in a uviolacustrine system. Our results, including the conformable nature, large areal extent, and presence of vol- canic glass, indicate that this high-SiO 2 material is derived from the product of evolved magma on Mars. This is the rst identi cation of a silicic volcaniclastic layer on another planet, and has important implications for magma evolution mechanisms on single-plate planets.

58 GEOSCIENCES↗
DOE OSTI2022

Olefin metathesis over supported MoO x catalysts: influence of the oxide support

Here, a series of supported MoO x catalysts on different oxide supports (Al2O3, TiO2, ZrO2, SiO2) were synthesized and investigated for propylene metathesis, characterized with in situ spectroscopies (DRIFTS, Raman, UV-vis) and chemically probed with propylene-TPSR-MS, propylene-TPSR-IR, and ethylene/2-butene titration. Under dehydrated conditions at monolayer coverage or maximum surface dispersion, the surface MoO x sites are present as a mixture of isolated di-oxo (O=) 2 Mo(–O–Al) 2 and oligomeric mono-oxo O=Mo(–O–Al) 4/5 sites on Al 2 O 3 , primarily oligomeric mono-oxo O=Mo(–O–Ti) 4/5 on TiO 2 , isolated di-oxo (O=) 2 Mo(–O–Zr) 2 and oligomeric mono-oxo O=Mo(–O–Zr) 4/5 on ZrO 2 , and isolated di-oxo (O=) 2 Mo(–O–Si) 2 on SiO 2 . The bridged (S 2 -OH) and tri-coordinated (S 3 -OH) anchoring surface hydroxyls of the oxide supports with strong support cation electronegativity control the activation and number of active surface MoO x sites at low temperatures (<100 °C). The isolated anchoring surface hydroxyls (S-OH) of the oxide supports with strong support cation electronegativity control the activation and number of active surface MoO x sites at high temperatures (>350 °C). Olefin metathesis by the more redox active supported MoO x /TiO 2 and MoO x /ZrO 2 catalysts is retarded by the formation of stable surface acetone and acetate species that block olefin adsorption. The oxide supports are potent ligands that tune the activation and surface chemistry of the surface MoOx sites for olefin metathesis. This is the first time that the influence of oxide supports on the activation and surface chemistry of supported MoO x sites has been systematically examined.

02 PETROLEUM↗
DOE OSTI2021

Substrate-enhanced photothermal nano-imaging of surface polaritons in monolayer graphene

Surface polaritons comprise a wealth of light–matter interactions with deep sub-wavelength scale confinement of electromagnetic modes. However, their nanoscale localized dissipation and thermalization processes are not readily accessible experimentally. Here, we introduce photothermal force microscopy to image surface plasmon polaritons (SPPs) in monolayer graphene through their non-radiative SiO2 substrate dissipation. We demonstrate the real-space SPP imaging via photo-induced atomic force detection, and from comparison with scattering-type scanning near-field optical microscopy imaging attribute the force response to substrate dissipation-enhanced thermal expansion. This work illustrates that nano-optical tip–sample induced dissipative forces facilitate a direct mechanical detection of surface polariton interactions with monolayer sensitivity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

High-resolution radiation detection using Ni/SiO 2 /n-4H-SiC vertical metal-oxide-semiconductor capacitor

In this article, we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the highest energy resolution ever reported. The 100 nm SiO2 layer was achieved on the Si face of n-4H-SiC epilayers using dry oxidation in air. The Ni/SiO2/n-4H-SiC MOS detectors not only demonstrated an excellent energy resolution of 0.42% (ΔE/E 100) for 5.48 MeV alpha particles but also caused a lower enhancement in the electronic noise components of the spectrometer compared with that observed for the best high-resolution Schottky barrier detectors. The MOS detectors also exhibited a high charge collection efficiency (CCE) of 96% at the optimized operating bias despite the presence of the oxide layer. A drift-diffusion model applied to the CCE vs gate bias voltage data revealed a minority (hole) carrier diffusion length of 24 μm. Capacitance mode deep level transient spectroscopy (C-DLTS) scans in the temperature range 84–800 K were carried out to identify the resolution limiting electrically active defects. Interestingly, the C-DLTS spectra revealed both positive and negative peaks, indicating the simultaneous presence of electron (majority) and hole (minority) trap centers. It has been inferred that at the steady-state bias for the C-DLTS measurement, the MOS detector operates in the inversion mode at certain device temperatures, causing holes to populate the minority trap centers and, hence, manifests minority carrier peaks as well.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Spectral and polarization based imaging in deep-ultraviolet excited photoelectron microscopy

Using photoelectron emission microscopy, nanoscale spectral imaging of atomically thin MoS2 buried between Al2O3 and SiO2 is achieved by monitoring the wavelength and polarization dependence of the photoelectron signal excited by deep-ultraviolet light. Although photons induce the photoemission, images can exhibit resolutions below the photon wavelength as electrons sense the response. To validate this concept, the dependence of photoemission yield on the wavelength and polarization of the exciting light was first measured and then compared to simulations of the optical response quantified with classical optical theory. A close correlation between experiment and theory indicates that photoemission probes the optical interaction of UV-light with the material stack directly. The utility of this probe is then demonstrated when both the spectral and polarization dependence of photoemission observe spatial variation consistent with grains and defects in buried MoS2. Taken together, these new modalities of photoelectron microscopy allow mapping of optical property variation at length scales unobtainable with conventional light-based microscopy.

Beechem, Thomas E. (ORCID:0000000275360719)↗
DOE OSTI2022

Restored Passivation after Complete Removal of Front Poly-Si Between the Grid in Poly-Si/SiO2 Front/Back Cells

This work explores the use of wet chemical etching to completely remove the front poly-Si layer between grid lines of a front/back poly-Si/SiO2 passivated contact device. The purpose of the work is to provide excellent passivation under the metal grid, but to also maximize Jsc by eliminating optical absorption in the front poly-Si. We show that after a high temperature anneal to distribute carriers in the poly-Si/SiO2/c-Si interface all of the poly-Si can be removed selectively with TMAH, using the SiO2 as an etch-stop layer. The etched surface can be repassivated back to its original level with the addition of a SiNx/Al2O3 stack grown on the preserved tunnelling oxide layer followed by a short forming gas anneal. Using symmetric 100 - 200 nm intrinsically doped poly-Si/SiO2 on textured n-type wafer templates we show absolute device efficiency enhancement from 15% to 21% by increasing the Jsc by 12 mA/cm2 after removing the front poly-Si and repassivating while effectively preserving the Voc, and FF of the device. IQE values are similar to PERC devices in the short wavelength range.

etching↗
DOE OSTI2023

Heat capacity of microgram oxide samples by fast scanning calorimetry

Quantitative scanning calorimetry on microgram-sized samples opens a broad, new range of opportunities for studying the thermodynamic properties of quantity-limited materials, including those produced under extreme conditions or found as rare accessory minerals in nature. We calibrated the Mettler Toledo Flash DSC 2+ calorimeter to obtain quantitative heat capacities in the range 200–350 °C, using samples weighing between 2 and 11.5 μg. Our technique is applied to a new set of oxide materials to which it has never been used before, without the need for melting, glass transitions, or phase transformations. Heat capacity data were obtained for silica in the high pressure stishovite (rutile) structure, dense post-stishovite glass, standard fused quartz, and for TiO2 rutile. These heat capacities agree within 5%–15% with the literature values reported for rutile, stishovite, and fused SiO2 glass. The heat capacity of post-stishovite glass, made by heating stishovite to 1000 °C, is a newly reported value. After accurate calibrations, measured heat capacities were then used to calculate masses for samples in the microgram range, a substantial improvement over measurement in conventional microbalances, which have uncertainties approaching 50%–100% for such small samples. Since the typical uncertainty of heat capacities measured on 10–100 mg samples in conventional differential scanning calorimetry is typically 7% (1%–5% with careful work), flash differential scanning calorimetry, using samples a factor of 1000 smaller, increases the uncertainty of heat capacity measurements by a factor of <3, opening the door for meaningful measurements on ultra-small, high-pressure samples and other quantity-limited materials.

Instruments & Instrumentation↗
DOE OSTI2024

Characterization of electromigration-induced short-range stress development in Al(0.25 at. % Cu) conductor line

Scanning x-ray microbeam topography and fluorescence experiments were conducted in situ to study the electromigration behavior of a 0.5 μm thick, 10 μm wide, and 200 μm long Al(0.25 at. % Cu) conductor line with 1.5 μm-thick SiO2 passivation on a single crystal Si substrate. The strain sensitivity of x-ray topography measurement allowed detailed examination of the electromigration-induced stress distribution and evolution in the conductor line in response to the depletion of Cu solute early in the electromigration process. Upon electromigration at 0.4 MA/cm2 and 303 °C, a short-range stress gradient was quickly induced by Al migration in the Cu-depleted cathode region to counteract further Al flow. The stress gradient was fully developed during the 5.3 h incubation time, extending over the critical Blech length of about 66 μm from the cathode end. Plastic deformation then occurred at the downstream end of the Cu-depleted region. The preferential electromigration of Cu did not cause detectable stress change outside the Cu-depleted region, except for the significant stress development from the Al2Cu precipitation at the anode end which appeared to initiate the fracture in the passivation. Preliminary finite difference modeling was undertaken to simulate the experimental observations, from which important parameters dictating electromigration in Al(Cu) line were extracted: an apparent effective valence of −5.6 and −1.9 for Cu and Al in Al(Cu), respectively, and a critical Cu concentration of 0.16 at. % above which Al grain boundary diffusion is effectively blocked.

Physics↗
DOE OSTI2022

Study of interface reaction in a B 4 C/Cr mirror at elevated temperature using soft X-ray reflectivity

Boron carbide is a prominent material for high-brilliance synchrotron optics as it remains stable up to very high temperatures. The present study shows a significant change taking place at 550°C in the buried interface region formed between the Cr adhesive layer and the native oxide layer present on the silicon substrate. An in situ annealing study is carried out at the Indus-1 Reflectivity beamline from room temperature to 550°C (100°C steps). The studied sample is a mirror-like boron carbide thin film of 400 Å thickness deposited with an adhesive layer of 20 Å Cr on a silicon substrate. The corresponding changes in the film structure are recorded using angle-dependent soft X-ray reflectivity measurements carried out in the region of the boron K-edge after each annealing temperature. Analyses performed using the Parratt recursive formalism reveal that the top boron carbide layer remains intact but interface reactions take place in the buried Cr–SiO2 region. After 300°C the Cr layer diffuses towards the substrate. At higher temperatures of 500°C and 550°C the Cr reacts with the native oxide layer and tends to form a low-density compound of chromium oxysilicide (CrSiOx). Depth profiling of Si and Cr distributions obtained from secondary ion mass spectroscopy measurements corroborate the layer model obtained from the soft X-ray reflectivity analyses. Details of the interface reaction taking place near the substrate region of boron carbide/Cr sample are discussed.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Mass Transport in Binary TiO 2 :SiO 2 and GeO 2 :SiO 2 Direct Ink Write Glasses

The mass transport mechanisms of Ti in TiO 2 :SiO 2 and Ge in GeO 2 :SiO 2 direct ink write, additively manufactured glasses were studied. Due to the low solubility of Ti in SiO2 and high melting point of TiO 2 relative to SiO 2 , Ti transport was found to occur via solid state interdiffusion between adjoining SiO 2 and TiO 2 precursor particles. The diffusivity of titanium in SiO 2 measured over typical sintering temperatures (1000-1300 °C) using Rutherford backscattering spectrometry was D = 9.1 × 10 -7 [m2/sec] exp ($\frac{378[\frac{kJ}{mol}]}{RT}$. This provides an estimate of ~30 nm for the diffusion length under typical sintering conditions (2 hrs. at 1200 °C). Although Ti and Ge have similar diffusivities in SiO 2 glass at low concentrations, GeO 2 was found to be much more mobile during the sintering of printed GeO 2 :SiO 2 green bodies. This was evident in glasses with phase separated GeO 2 regions over length scales of ~10 μm and in experiments involving binary xerogels in which GeO 2 migrated over ~10 μm through cracked, porous SiO 2 layers. Large phase separated regions and long transport lengths in GeO 2 :SiO 2 suggest that the transport of GeO 2 occurs prior to the densification of the SiO 2 matrix via an alternative mechanism such as capillary flow. These results inform important considerations in the design of index modifying inks for the direct ink write process, namely initial precursor phase, mutual solubility with the base SiO 2 glass, and mass transport throughout the sintering process.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Phase composition of polycrystalline HfNx (0.45 ≤ x ≤ 1.60) and effects of low-energy ion irradiation on microstructure, texture, and physical properties

We have investigated the phase composition of HfNx as a function of x and the effects of low-energy ion irradiation on the microstructure and physical properties of polycrystalline layers grown on SiO2 at 350 °C by ultrahigh vacuum reactive dc magnetron sputtering of Hf in mixed N2/Ar discharges. X-ray diffraction and Rutherford backscattering spectrometry results show that the phases obtained in polycrystalline HfNx layers with increasing x are hcp-structure α-Hf:N (x ≲ 0.6); multiphase mixtures consisting of α-Hf, NaCl-structure δ-HfN, rhombohedral ɛ-Hf3N2, and/or ζ-Hf4N3 (0.6 ≲ x ≲ 0.9); δ-HfN single phase (0.9 ≲ x ≲ 1.3); and mixtures of δ-HfN and higher nitrides (x ≳ 1.3). HfNx layers with 0.9 ≲ x ≲ 1.2 grown under mild ion irradiation (incident ion energy Ei ≃ 7 eV and ion-to-Hf flux ratios Ji/JHf = 1−3) are underdense with mixed orientation, low in-plane stress, and rough surface morphology due to limited adatom mobilities resulting in kinetic roughening and atomic shadowing during film growth. However, the use of intense ion irradiation (Ei = 25 eV and Ji/JHf = 4−20) results in HfNx layers, which are fully dense with strongly 111-oriented texture, compressive in-plane stress, and smooth surfaces due to ion irradiation enhanced adatom surface mobilities. In addition, the latter films have lower resistivity and higher hardness. For stoichiometric δ-HfN layers, ρ decreases from 69.7 to 35.2 μΩ cm and H increases from 22.1 to 27.4 GPa, with increasing ion-irradiation intensity. However, for HfNx layers with 1.2 ≲ x ≲ 1.6, the correspondingly higher steady state atomic N surface coverages during deposition alter growth kinetics in favor of 001 texture with a fully dense structure and compressive in-plane stress.

Materials Science↗
DOE OSTI2024

Repair strategy for fused silica wedged focus lens with high-density filamentary damage

The National Ignition Facility (NIF) is intentionally operated with the final fused silica glass (SiO2) optics exposed to fluences and intensities with the potential to induce damage that will grow with additional laser exposure. Therefore, the NIF operates a recycle loop to refurbish final optics by mitigating any initiated surface damage to arrest its growth. However, the morphology of filamentary damage, caused by local self-focusing in the bulk of a silica optic, adds complexity to optics mitigation and provides a limitation to optic reusability. Here, we evaluate techniques for mitigating isolated and clustered filamentary damage. Optical microscopy before and after installation on NIF was used to determine the efficacy of filamentary mitigation after a series of high fluence and intensity laser exposures. The challenges and success rate of the methods are compared for various filamentary damage mitigation strategies.

National Ignition Facility↗
DOE OSTI2021

Siloxane Deposition on the Ni-YSZ Solid Oxide Fuel Cell Anode Exposed to Bio-Syngas

Siloxane, a common contaminant present in biogas, is known for adverse effects on cogeneration prime movers. In this study, the siloxane deposition products and mechanism in the solid oxide fuel cell nickel-yttria stabilized zirconia (Ni-YSZ) anode are investigated analytically and experimentally. An SOFC with Ni-YSZ anode and pure Ni/YSZ pellets were exposed to a simulated biogas-reformate fuel with octamethylcyclotetrasiloxane (D4) contamination at 750 °C. The electrochemical characterization results show that the SOFCs performance degradation caused by D4 contamination is irreversible. Morphology and XRD results illustrate that silicon and carbon deposition can both be detected in the anode and pellets. Graphite, SiC and SiO2 are all possible products based on the results of XRD test. Here, according to the formation of graphite and SiC, the new mechanism suggests that carbon is also an essential factor in siloxane contamination of Ni-YSZ anodes besides silicon, which can be explained by the catalytic and electrochemical analysis.

25 ENERGY STORAGE↗
DOE OSTI2022

Utah FORGE Well 56-32 Sludge XRF

This is an Excel spreadsheet containing the results of X-ray fluorescence from well 56-32 sludge samples. The instrumentation used was a Olympus Vanta M series handheld XRF analyzer. A glass (SiO2) "blank" was analyzed at the beginning and end of each sample batch to detect contamination within the instrument. The standard 2711A was analyzed at the beginning and end of each sample batch to detect drift in instrument precision over time. Material was analyzed in a plastic cup with a prolene thin film cover for minimal interference.

15 GEOTHERMAL ENERGY↗
DOE OSTI2020

Materials Data on Y4AlSi2(O2F)5 by Materials Project

Y4AlO6F5(SiO2)2 crystallizes in the triclinic P1 space group. The structure is one-dimensional and consists of two silanediol molecules and one Y4AlO6F5 ribbon oriented in the (1, 0, 0) direction. In the Y4AlO6F5 ribbon, there are four inequivalent Y sites. In the first Y site, Y is bonded in a 1-coordinate geometry to three O and one F atom. There are a spread of Y–O bond distances ranging from 2.15–2.85 Å. The Y–F bond length is 2.05 Å. In the second Y site, Y is bonded in a 1-coordinate geometry to one O and two F atoms. The Y–O bond length is 1.53 Å. There are one shorter (2.08 Å) and one longer (2.42 Å) Y–F bond lengths. In the third Y site, Y is bonded in a 1-coordinate geometry to one O and three F atoms. The Y–O bond length is 2.38 Å. There are a spread of Y–F bond distances ranging from 2.07–2.59 Å. In the fourth Y site, Y is bonded in a 1-coordinate geometry to one O and three F atoms. The Y–O bond length is 1.45 Å. There are a spread of Y–F bond distances ranging from 2.03–2.51 Å. Al is bonded in a 2-coordinate geometry to four O atoms. There are a spread of Al–O bond distances ranging from 1.87–2.27 Å. There are six inequivalent O sites. In the first O site, O is bonded in a 3-coordinate geometry to one Y, one Al, and one O atom. The O–O bond length is 1.68 Å. In the second O site, O is bonded in a single-bond geometry to one Y atom. In the third O site, O is bonded in a 1-coordinate geometry to one Y, one Al, and one O atom. The O–O bond length is 1.75 Å. In the fourth O site, O is bonded in a distorted single-bond geometry to one Y atom. In the fifth O site, O is bonded in a 5-coordinate geometry to two equivalent Y, one Al, one O, and one F atom. The O–F bond length is 1.98 Å. In the sixth O site, O is bonded in a 1-coordinate geometry to one Al and one O atom. There are five inequivalent F sites. In the first F site, F is bonded in a 2-coordinate geometry to three Y atoms. In the second F site, F is bonded in a distorted single-bond geometry to one Y atom. In the third F site, F is bonded in a 1-coordinate geometry to one Y and one O atom. In the fourth F site, F is bonded in a distorted L-shaped geometry to two Y atoms. In the fifth F site, F is bonded in a bent 150 degrees geometry to two Y atoms.

36 MATERIALS SCIENCE↗