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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, open circuit voltage, and output power, voltage, and current at the maximum power point. Incorporated in the report are the distributions of the prestress electrical data for all cell types. Data were also obtained on cell series and shunt resistance.

Prince, J. L.↗
NASA NTRS1979

A theoretical analysis of the current-voltage characteristics of solar cells

The following topics are discussed: (1) dark current-voltage characteristics of solar cells; (2) high efficiency silicon solar cells; (3) short circuit current density as a function of temperature and the radiation intensity; (4) Keldysh-Franz effects and silicon solar cells; (5) thin silicon solar cells; (6) optimum solar cell designs for concentrated sunlight; (7) nonuniform illumination effects of a solar cell; and (8) high-low junction emitter solar cells.

Fang, R. C. Y.↗
NASA NTRS1979

Improvement and extension of data from ATS-6 Solar Cell Radiation Damage Experiment (SCRDE)

The ATS 6 solar cell radiation damage experiment data through 2 1/3 years of synchronous orbit operation are presented. Comparisons are made of the performances of the 13 different types of solar cell/cover configurations, including solar cell and cover thickness variations, base resistivity variation, new cover processes and materials, and the COMSAT violet cell. These performances are also compared to the performance of the LES 6 solar cell experiment, the ATS 6 main solar arrays, and laboratory spectrum electron irradiations. It is found that the cells of the ATS 6 experiment generally performed as expected through 6 to 9 months in orbit, but that at 2 1/3 years they were severely degraded in current. The short circuit current degradation after 2 1/3 years in orbit appears to exhibit an anomalous additional degradation of 5 to 9 percent over what was experienced in synchronous orbit operation.

Goldhammer, L. J.↗
NASA NTRS1979

Shallow-homojunction GaAs solar cells

Single-crystal GaAs shallow-homojunction solar cells on GaAs or Ge substrates, without Ga sub 1-x Al sub x As window layers, that have conversion efficiencies exceeding 20% at AM1 (17% at AMO). Using a simple theoretical model, good fits were obtained between computer calculations and experimental data for external quantum efficiency and conversion efficiency of cells with different values of n+ layer thickness. The calculations not only yield values for material properties of the GaAs layers composing the cells but will also permit the optimization of cell designs for space and terrestrial applications. Preliminary measurements indicate that the shallow-homojunction cells are resistant to electron irradiation. In the best test so far, bombardment with 1 x 10 to the 16th power/sq cm fluence of 1 MeV electrons reduced the short-circuit current by only about 6%.

Fan, J. C. C.↗
NASA NTRS1979

Some TEM observations of Al2O3 scales formed on NiCrAl alloys

The microstructural development of Al2O3 scales on NiCrAl alloys has been examined by transmission electron microscopy. Voids were observed within grains in scales formed on a pure NiCrAl alloy. Both voids and oxide grains grew measurably with oxidation time at 1100 C. The size and amount of porosity decreased towards the oxide-metal growth interface. The voids resulted from an excess number of oxygen vacancies near the oxidemetal interface. Short-circuit diffusion paths were discussed in reference to current growth stress models for oxide scales. Transient oxidation of pure, Y-doped, and Zr-doped NiCrAl was also examined. Oriented alpha-(Al, Cr)2O3 and Ni(Al, Cr)2O4 scales often coexisted in layered structures on all three alloys. Close-packed oxygen planes and directions in the corundum and spinel layers were parallel. The close relationship between oxide layers provided a gradual transition from initial transient scales to steady state Al2O3 growth.

Smialek, J.↗
NASA NTRS1979

Detection of hairline cracks in textured silicon solar cells

Using a focused laser scanner, the optical technique described in the present paper can be used to detect hairline cracks of the type occurring in solar cells subjected to surface texturing. The technique is capable of detecting cracks of the order of a few microns, which, otherwise, can be observed only under high magnification using an optical microscope. The technique consists of scanning a solar cell with a finely focused laser beam and recording the photoresponse (short circuit current or open circuit voltage) as a function of beam position. The presence of a crack is manifested by a sharp dip in the photoresponse.

Sopori, B. L.↗
NASA NTRS1979

Internal photoemission in Ag-Al2O3-Al junctions

The magnitude of the photon-induced current in Ag-Al2O3-Al metal-oxide-metal junctions has been studied as a function of photon energy and angle of incident radiation. Photocurrents were theoretically analyzed on the basis of a modified vacuum photoemission model (Jain, 1975; Slayman et al., to be published). Optical constants previously reported in the literature (Irani et al., 1971; Ehnrereich et al., 1963) were used to calculate the true spatial generation rate in Ag and Al as a function of the angle, polarization of incident radiation, and film thickness. Results were found to be in very good agreement with experimentally determined values for a tunable dye laser with a KDP doubling crystal pumped by a Q-switched Nd:YAG laser with a LiIO3 doubling crystal. The system provided risetimes of 50 ns or less and peak powers of 10 W. Under short circuit conditions, the photoresponse to incident power was linear up to available power densities of 10 kW/sq cm. Quantum efficiencies of about 0.1% at zero-bias, near 3.8 eV under P polarization, were typically observed.

Guedes, J. M. P.↗
NASA NTRS1978

Preliminary evaluation of glass resin materials for solar cell cover use

Silicon solar cells and silicon wafers coated with a heat-curable resin consisting of alternating Si-O atoms were subjected to three tests to evaluate the potential utility of this coating in space environments. These included UV irradiation in vacuum at an intensity of 10 air mass zero UV energy-equivalent solar constants for 728 hours followed by a long thermal cycle; 15 thermal shock cycles between 100 C and minus 196 C; and high temperature and humidity (65 C at 90% relative humidity). The UV tests resulted in a 8 to 24% loss in short-circuit current and darkening of the covers. Modification of the resin to provide a better match between the coefficients of expansion of the resin and silicon improved resistance to thermal shock, but also increased the darkening effect under UV irradiation. Silicon wafers coated with the resin were not adversely affected by the temperature/humidity test.

Marsik, S. J.↗
NASA NTRS1979

Analysis of the interaction of an electron beam with a solar cell. III - The effect of spacial variations of the number density of recombination centers on SEM measurements

By means of an exactly soluble model the short circuit current generated by a scanning electron microscope in a P-N junction has been determined in cases where the trap density is inhomogeneous. The diffusion length for minority carriers becomes then dependent on the spacial coordinates. It is shown that in this case the dependence of the Isc on characteristic parameters as cell thickness, distance of the beam excitation spot from ohmic contacts, etc., becomes very intricate. This fact precludes the determination of the local diffusion length in the usual manner. Although the model is somewhat simplified in order to make it amenable to exact solutions, it is nevertheless realistic enough to lead to the conclusion that SEM measurements of bulk transport parameters in inhomogeneous semiconductor material are impractical since they may lead to serious errors in the interpretation of the data by customary means.

Von Roos, O.↗
NASA NTRS1980

Testing EKG electrodes on-line

Simple test instrument allows electrocardiograph operator to check individual electrodes while they are attached to subject. Simply by rotating switch and observing meter, operator verifies that each electrode is not short-circuited or open-circuited and does not present excessive contact resistance at its interface with skin. Instrument also makes it convenient to check electrode cables that are subject to frequent bending and wear, such as cables used on patients who are exercising.

Crosier, W. G.↗
NASA NTRS1981

Instrument measures cloud cover

Eight solar sensing cells comprise inexpensive monitoring instrument. Four cells always track Sun while other four face sky and clouds. On overcast day, cloud-irradiance sensors generate as much short-circuit current as Sun sensor cells. As clouds disappear, output of cloud sensors decreases. Ratio of two sensor type outputs determines fractional cloud cover.

Laue, E. G.↗
NASA NTRS1979

Novel approaches for alleviation of electrical hazards of graphite-fiber composites

Four basically different approaches were considered: gasification of fibers, retention in the matrix, clumping to prevent entrainment, and electrical insulation of fibers. The techniques used to achieve them are described in some detail. These involved surface treatment of fibers to improve the wettability of fibers and coating the fibers with the selected substances before laying them up for composite fabrication. Thermogravimetric analyses were performed on the plain and treated fibers in inert (nitrogen, argon) and reactive (air) atmospheres. The treated fibers embedded in epoxy were ignited in a Bunsen flame to determine the efficiency of these treatments. A simple apparatus was assembled to detect the time for the first short circuit (in a typical electrical circuit) when exposed to the combustion products from a graphite fiber composite fire. The state-of-the-art and treated fibers cast in typical epoxy were burned and ranked for potential success. It was inferred that the gasification schemes appear promising when reduction or oxidation is tried. It was also found that some very promising candidates were available for the clumping and for the electrical insulation of fibers.

Ramohalli, K.↗
NASA NTRS1980

Diffusion length measurements of thin GaAs solar cells by means of energetic electrons

A calculation of the short circuit current density (j sub sc) of a thin GaAs solar cell induced by fast electrons is presented. It is shown that in spite of the disparity in thickness between the N-type portion of the junction and the P-type portion of the junction, the measurement of the bulk diffusion length L sub p of the N-type part of the junction is seriously hampered due to the presence of a sizable contribution to the j sub sc from the P-type region of the junction. Corrections of up to 50% had to be made in order to interpret the data correctly. Since these corrections were not amenable to direct measurements it is concluded that the electron beam method for the determination of the bulk minority carrier diffusion length, which works so well for Si solar cells, is a poor method when applied to thin GaAs cells.

Vonross, O.↗
NASA NTRS1980

Driver for solar cell I-V characteristic plots

A bipolar voltage ramp generator which applies a linear voltage through a resistor to a solar cell for plotting its current versus voltage (I-V) characteristic between short circuit and open circuit conditions is disclosed. The generator has automatic stops at the end points. The resistor serves the multiple purpose of providing a current sensing resistor, setting the full-scale current value, and providing a load line with a slope approximately equal to one, such that it will pass through the origin and the approximate center of the I-V curve with about equal distance from that center to each of the end points.

Turner, G. B.↗
NASA NTRS1980

Preliminary results from a four-working space, double-acting piston, Stirling engine controls model

A four working space, double acting piston, Stirling engine simulation is being developed for controls studies. The development method is to construct two simulations, one for detailed fluid behavior, and a second model with simple fluid behaviour but containing the four working space aspects and engine inertias, validate these models separately, then upgrade the four working space model by incorporating the detailed fluid behaviour model for all four working spaces. The single working space (SWS) model contains the detailed fluid dynamics. It has seven control volumes in which continuity, energy, and pressure loss effects are simulated. Comparison of the SWS model with experimental data shows reasonable agreement in net power versus speed characteristics for various mean pressure levels in the working space. The four working space (FWS) model was built to observe the behaviour of the whole engine. The drive dynamics and vehicle inertia effects are simulated. To reduce calculation time, only three volumes are used in each working space and the gas temperature are fixed (no energy equation). Comparison of the FWS model predicted power with experimental data shows reasonable agreement. Since all four working spaces are simulated, the unique capabilities of the model are exercised to look at working fluid supply transients, short circuit transients, and piston ring leakage effects.

Daniele, C. J.↗
NASA NTRS1979

Some TEM observations of Al2O3 scales formed on NiCrAl alloys

The microstructural development of Al2O3 scales on NiCrAl alloys has been examined by transmission electron microscopy. Voids have been observed within grains in scales formed on a pure NiCrAl alloy. Both voids and oxide grains grew measurably with oxidation time at 1100 C. The size and amount of porosity decreased towards the oxide-metal growth interface. It was postulated that the voids resulted from an excess number of oxygen vacancies near the oxide-metal interface. Short-circuit diffusion paths were discussed in reference to current growth stress models for oxide scales. Transient oxidations of pure, Y-doped, and Zr-doped NiCrAl was also examined. Oriented alpha-(Al,Cr)2O3 and Ni(Al,Cr)2O4 scales often coexisted in layered structures on all three alloys. Close-packed oxygen planes and directions in the corundum and spinel layers were parallel. The close relationships between oxide layers provided a gradual transition from initial transient scales to steady state Al2O3 growth.

Smialek, J.↗
NASA NTRS1980

The spectral response of a front surface field solar cell

A calculation of the short-circuit current as a function of wavelength of the incident light, induced in a front surface field solar cell, is presented. The cell consists of a P(+)-P-N(+) junction. The electric field present in the P(+) layer situated at the front surface (the surface exposed to the sun) boosts the minority carrier collection at the P-N(+) junction sufficiently to make this structure a viable alternative to ordinary solar cells. A distinct advantage derives from the placement of all ohmic contacts on the back-surface facilitating array assemblage.

Von Roos, O.↗
NASA NTRS1980

Determination of deep level capture cross sections in wide band-gap semiconductors by means of an electron beam

The paper presents a general theory for the determination of the short circuit current generated by a sinusoidally amplitude-modulated electron beam in the presence of recombination centers with an arbitrary number of charge states. It is shown that a measurement of the coherent phase shift with respect to the incident beam as a function of the modulation frequency of the beam ascertains the magnitudes of electron and hole capture cross sections. The surface exposed to the electron beam must have a negligible surface recombination velocity for the measurements to be unambiguous.

Von Roos, O.↗