Magnetoresistance of semiconducting SrTiO sub 3.
Magnetoresistance of reduced and doped strontium titanate to investigate band structure
MAGNETORESISTANCE↗
SEARCH · Engineering Papers
Results for “Semiconductor structures”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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NASA multidisciplinary research grant
Research is discussed in the multidisciplinary areas of space and planetary science; materials and radiation; systems, instrumentation, and structures; and technology and man. Highlights are identified as an alpha-recoil track method of archeological dating; infrared astronomical telescope; reaction rates data, semiconductor radiation detectors, and analysis of time-dependent systems; Gunn effect devices for microwave generation and detection, mode-locked lasers, and radiation theory; and the application of a satellite communication system to educational development. Detectors to be flown on Apollo 16 to measure heavy particle flux in the solar wind and to be part of the HEAO-A experiment on extremely heavy nuclei in cosmic rays were developed. The impact of the multidisciplinary research on university activities is described, and individual departmental reports are included.
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High power laser diodes for the NASA direct detection laser transceiver experiment
High-power semiconductor laser diodes selected for use in the NASA space laser communications experiments are discussed. The diode selection rationale is reviewed, and the laser structure is shown. The theory and design of the third mirror lasers used in the experiments are addressed.
Seery, Bernard D.↗
Electrically-Tunable Group Delays Using Quantum Wells in a Distributed Bragg Reflector
There is a growing interest in the fabrication of semiconductor optical group delay lines for the development of phased arrays of Vertical-Cavity Surface-Emitting Lasers (VCSELs). We present a novel structure incorporating In(x)GA(1-x)As quantum wells in the GaAs quarter-wave layers of a GaAs/AlAs distributed Bragg reflector (DBR). Application of an electric field across the quantum wells leads to red shifting and peak broadening of the el-hhl exciton peak via the quantum-confined Stark effect. Resultant changes in the index of refraction thereby provide a means for altering the group delay of an incident laser pulse. We discuss the tradeoffs between the maximum amount of change in group delay versus absorption losses for such a device. We also compare a simple theoretical model to experimental results, and discuss both angle and position tuning of the BDR band edge resonance relative to the exciton absorption peak. The advantages of such monolithically grown devices for phased-array VCSEL applications will be detailed.
Nelson, Thomas R., Jr.↗
Space Weathering of Genesis Mission Solar-wind Collectors with Inferences for Weathering on Airless Bodies
Samples from the Genesis Solar Wind Sample Return (NASA Discovery 5) are a unique opportunity to study the initial stages of space weathering, i.e., the physical and chemical effects of solar-wind irradiation. Arrays of collectors containing multiple materials were each exposed to a different solar-wind regime (fast, slow, bulk, or coronal mass ejection) at the L1 point for long durations (years). Materials exposed to the solar wind included metals, semiconductors, and insulators. Although the time of exposure was obviously short relative to samples having extraterrestrial origins, optical properties, surface chemical properties, and matrix structure have changed in many collectors due to exposure to solar wind. The thickness of amorphous zones, where present, appears to correspond with the depth of the peak of the solar-wind H distribution in each regime. Damage from high-energy particles was negligible because the collectors were 700 μm or less in thickness and shielded from the back by the spacecraft. Micrometeorite impacts and sputtering were also negligible because of the short exposure times. Our current results are preliminary: We hope future workers will extend this study both to support Genesis characterization efforts and to further understand space-weathering processes on a geologic timescale.
space weathering↗
The NASA computer aided design and test system
A family of computer programs facilitating the design, layout, evaluation, and testing of digital electronic circuitry is described. CADAT (computer aided design and test system) is intended for use by NASA and its contractors and is aimed predominantly at providing cost effective microelectronic subsystems based on custom designed metal oxide semiconductor (MOS) large scale integrated circuits (LSIC's). CADAT software can be easily adopted by installations with a wide variety of computer hardware configurations. Its structure permits ease of update to more powerful component programs and to newly emerging LSIC technologies. The components of the CADAT system are described stressing the interaction of programs rather than detail of coding or algorithms. The CADAT system provides computer aids to derive and document the design intent, includes powerful automatic layout software, permits detailed geometry checks and performance simulation based on mask data, and furnishes test pattern sequences for hardware testing.
Gould, J. M.↗
Metals processing
The metals processing effort is directed towards improvement of performance and usefulness of materials through modification and control of shape and internal structure. Interaction of reactive gases, introduced into a plasma arc, with iron alloys were analyzed. The technology of magnesium production was assessed. The study of fast fluidized bed reactors is continued. Aspects of separation processes are being investigated. The development of high field superconducting composites for use in large magnetic fusion devices is also discussed. Processing, structure, and property relationships of superconducting materials and the substitution of precious metals in standard electrical contact and connector applications are tested. The influence of processing procedures on the structure of zircaloy and nickel base alloys with a goal of improving mechanical properties and performance is investigated. Investigation of the potential of metal insulator semiconductor junctions as photovoltaic devices is reported.
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Resonant tunneling IR detectors
Researchers propose a novel semiconductor heterojunction photodetector which would have a very low dark current and would be voltage tunable. A schematic diagram of the device and its band structure are shown. The two crucial components of the device are a cathode (InGaAs) whose condition band edge is below the conduction band edge of the quantum wells and a resonant tunneling filter (GaAs-AlGaAs). In a standard resonant tunneling device the electrodes are made of the same material as the quantum wells, and this device becomes highly conducting when the quantum levels in the wells are aligned with the Fermi level in the negatively biased electrode. In contrast, the researchers device is essentially non-conducting under the same bias conditions. This is because the Fermi Level of the cathode (InGaAs) is still well below the quantum levels so that no resonant transport occurs and the barriers (AlGaAs) effectively block current flow through the device. However, if light with the same photon energy as the conduction-band discontinuity between the cathode and the quantum wells, E sub c3-E sub c1, is shone on the sample, free carriers will be excited to an energy corresponding to the lowest quantum level in the well closest to the cathode (hv plue E sub c1 = E sub o). These electrons will resonantly tunnel through the quantum wells and be collected as a photocurrent in the anode (GaAs). To improve the quantum efficiency, the cathode (InGaAs) should be very heavily doped and capped with a highly reflective metal ohmic contact. The thickness of the device should be tailored to optimize thin film interference effects and afford the maximum absorption of light. Because the device relies on resonant tunneling, its response should be very fast, and the small voltages needed to change the responsivity should allow for very high frequency modulation of the photocurrent. In addition, the device is tuned to a specific photon energy so that it can be designed to detect a fairly narrow range of wavelengths. This selectivity is important for reducing the photocurrent due to spurious light sources.
Woodall, Jerry M.↗
Application of Hilbert-Huang Transform for Improved Defect Detection in Terahertz NDE of Shuttle Tiles
Terahertz NDE is being examined as a method to inspect the adhesive bond-line of Space Shuttle tiles for defects. Terahertz signals are generated and detected, using optical excitation of biased semiconductors with femtosecond laser pulses. Shuttle tile samples were manufactured with defects that included repair regions unbond regions, and other conditions that occur in Shuttle structures. These samples were inspected with a commercial terahertz NDE system that scanned a tile and generated a data set of RF signals. The signals were post processed to generate C-scan type images that are typically seen in ultrasonic NDE. To improve defect visualization the Hilbert-Huang Transform, a transform that decomposes a signal into oscillating components called intrinsic mode functions, was applied to test signals identified as being in and out of the defect regions and then on a complete data set. As expected with this transform, the results showed that the decomposed low-order modes correspond to signal noise while the high-order modes correspond to low frequency oscillations in the signal and mid-order modes correspond to local signal oscillations. The local oscillations compare well with various reflection interfaces and the defect locations in the original signal.
Anastasi, Robert F.↗
High voltage, high current Schottky barrier solar cell
A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.
Stirn, R. J.↗
Properties of TiO2 thin films and a study of the TiO2-GaAs interface
Titanium dioxide (TiO2) films prepared by chemical vapor deposition were investigated in this study for the purpose of the application in the GaAs metal-insulator-semiconductor field-effect transistor. The degree of crystallization increases with the deposition temperature. The current-voltage study, utilizing an Al-TiO2-Al MIM structure, reveals that the d-c conduction through the TiO2 film is dominated by the bulk-limited Poole-Frenkel emission mechanism. The dependence of the resistivity of the TiO2 films on the deposition environment is also shown. The results of the capacitance-voltage study indicate that an inversion layer in an n-type substrate can be achieved in the MIS capacitor if the TiO2 films are deposited at a temperature higher than 275 C. A process of low temperature deposition followed by the pattern definition and a higher temperature annealing is suggested for device fabrications. A model, based on the assumption that the surface state densities are continuously distributed in energy within the forbidden band gap, is proposed to interpret the lack of an inversion layer in the Al-TiO2-GaAs MIS structure with the TiO2 films deposited at 200 C.
Chen, C. Y.↗
Solar Cells From Metallurgical-Grade Silicon
Epitaxial deposition produces acceptable solar cells from metallurgicalgrade silicon. Instead of diffusing dopants into silicon to form pn junction, junction is formed by growing epitaxial layer--one having crystal structure continuous with that of substrate--on metallurgical-grade silicon. Less pure forms of silicon, such as metallurgical-grade, are less expensive than semiconductor-grade material and help to lower cost of solar cells.
Daiello, R. V.↗
Thin, Lightweight Solar Cell
Improved design for thin, lightweight solar photovoltaic cells with front contacts reduces degradation of electrical output under exposure to energetic charged particles (protons and electrons). Increases ability of cells to maintain structural integrity under exposure to ultraviolet radiation by eliminating ultraviolet-degradable adhesives used to retain cover glasses. Interdigitated front contacts and front junctions formed on semiconductor substrate. Mating contacts formed on back surface of cover glass. Cover glass and substrate electrostatically bonded together.
Brandhorst, Henry W., Jr.↗
Functional Variation of Dual Gate MOS-JFET CCD Test Structure
Drain voltages of a test structure of dual gate MOS-JFET CCD (TIJ J032) were measured by an advance laser scanner.
test↗
Fabrication of electroacoustic RF amplifiers
Anodic bonding of a lithium niobate piezoelectric crystal over a silicon-on-sapphire structure with the crystal mounted over a closely controlled oxide provides a point-contact mount for two rectangular slabs /one piezoelectric and the other a silicon semiconductor/ within 600 A of each other.
Trent, R. L.↗
Practical antireflection coatings for metal-semiconductor solar cells
The metal-semiconductor solar cell is a potential candidate for converting solar energy to electrical energy for space and terrestrial application. In this paper, a method for obtaining parameters of practical antireflection (AR) coatings for the metal-semiconductor solar cells is given. This method utilizes the measured equivalent index of refraction obtained from ellipsometry, since the surface to be AR coated has a multilayer structure. Both the experimental results and theoretical calculations of optical parameters for Ta2O5 AR coatings on Au-GaAs and Au-GaAs(0.78)P(0.22) solar cells are presented for comparison.
Yeh, Y. C. M.↗
(abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates
The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si(sub 1-x)Ge(sub x) heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al(sub x)Ga(sub 1-x)N/SiC multilayer structures have never been grown and the interfacial structure is unknown.
GaN AlN GaN/AlN↗
Structural Fluctuations and Thermophysical Properties of Molten II-VI Compounds
The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. It has long been recognized that liquid Te presents a unique case having properties between those of metals and semiconductors. The electrical conductivity for Te melt increases rapidly at melting point, indicating a semiconductor-metal transition. Te melts comprise two features, which are usually considered to be incompatible with each other: covalently bound atoms and metallic-like behavior. Why do Te liquids show metallic behavior? is one of the long-standing issues in liquid metal physics. Since thermophysical properties are very sensitive to the structural variations of a melt, we have conducted extensive thermophysical measurements on Te melt.
Su, Ching-Hua↗