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At least 343 records · Page 19

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NASA NTRS1992

Solar Si II line ratios from the high-resolution telescope and spectrograph

Theoretical emission-line ratios involving multiplets near 1262, 1306, and 1530 A are derived on the basis of new calculations of electron-impact excitation rates for allowed transition in Si II. A comparison of these line ratios with observational data from a quiet solar region, a sunspot, and an active region, obtained with the HIRTS on board a sounding rocket flight reveals that the 1530-A multiplet is optically thick, which is consistent with a calculation of the optical depth of these lines through a model atmosphere. The 1262- and 1306-A multiplets appear to be effectively optically thin. The average discrepancy between the theoretical and observed ratios is about 40 percent, which may not be significant, since the estimated uncertainties in both the calculated and experimental data are approximately 30 percent.

Keenan, F. P.↗

NASA NTRS1992

Improved calculations for the C III 1907,1909 and Si III 1883,1892 electron density sensitive emission-line ratios, and a comparison with IUE observations

Atomic data are used in conjunction with the statistical equilibrium code of Dufton (1977) to calculate relative C III and Si III level populations, and hence emission-line strengths for a range of electron temperatures and densities. It is assumed that photoexcitation and deexcitaton rates are negligible in comparison with the corresponding collisional rates, that ionization to and recombination from other ionic levels are slow compared with bound-bound rates, and that all transitions are optically thin. The observed values of R1 and R2 for several planetary nebulae and a symbiotic star, measured from high-resolution spectra obtained with the IUE satellite, lead to electron densities that are compatible, and are also in good agreement with those deduced from line ratios in other species.

Keenan, F. P.↗

NASA NTRS1991

Vacuum ultraviolet laser induced fluorescence on a Si atomic beam

A broadly applicable vacuum ultraviolet experiment is described for measuring radiative lifetimes of neutral and singly-ionized atoms in a beam environment to 5-percent accuracy using laser induced fluorescence. First results for neutral Si are reported.

O'Brian, T. R.↗

NASA NTRS1992

Thermal conductivity of thermoelectric Si(0.8)-Ge(0.2) alloys

The thermal conductivity of heavily doped, n-type Si-Ge alloys has been studied from 300 to 1200 K. The scattering rate of several phonon scattering mechanisms has been calculated, including intrinsic scattering, mass defect and distortion scattering, phonon-electron scattering, and scattering by inclusions. These rates were then used to calculate the lattice thermal conductivity. The electronic component of the thermal conductivity was calculated from the calculated Lorenz ratio and measured values of the electrical conductivity. The total thermal conductivity was then compared to measured values for a specimen studied by Vining et al. (1991).

White, D. P.↗

NASA NTRS1993

Secondary and tertiary dendrite arm spacing relationships in directionally solidified Al-Si alloys

Secondary, lambda sub 2, and tertiary, lambda sub 3, dendrite arm spacings have been measured from Al-Si alloys which were directionally solidified as functions of growth velocity, V, temperature gradient, G, and composition, Co. Both lambda sub 2 and lambda sub 3 decreased as the imposed growth velocity and silicon concentrations were increased, and for each function a systematic variance in the rate was seen. Complications with measuring secondary arm spacings are shown and it was found that the tertiary arm data agree much better with coarsening theory, the implication being that lambda sub 3, when measurable, is a more representative and reliable measure of the solidification history than lambda sub 2.

Grugel, R. N.↗

NASA NTRS1993

Bose-Einstein correlation of kaons in Si + Au collisions at 14.6 A GeV/c

The E-802 spectrometer at the Brookhaven Alternating Gradient Synchrotron, enhanced by a trigger for selection of events with one or more specified particles, has been used to measure the momentum-space correlation between pairs of K(+)s emitted in central Si + Au collisions at 14.6 A GeV/c. This correlation has been projected onto the Lorentz-invariant relative four-momentum axis. Fits to this correlation function yield a size for the kaon source that is comparable to that found using pi(+) pairs from a similar rapidity range, once a transformation from the particle-pair frames to a single source frame is made.

Akiba, Y.↗

NASA NTRS1993

Thermodynamics of Si-C-O system

The Si-C-O predominance diagram, in conjunction with a free-energy minimum of the gas phase, has been used to explain several observations in the reactions of SiC and/or carbon with SiO2. In the predominance diagram, the axes are chosen as the primary activity units for carbon and oxygen. The predominance diagram shows only the stable condensed phases SiO2, SiC, carbon, and silicon. It also shows the isobars for SiO(g) and CO(g), which are the primary gas-phase species. Only the thermodynamics of the system is considered. The observations explained include the general adjustment of carbon-rich SiC to a free-energy minimum on the SiC/SiO2 coexistence line and the inability to form free silicon from SiO2 and carbon, except at very high temperatures.

Jacobson, N. S.↗

NASA NTRS1991

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

Xing, G. C.↗

NASA NTRS1991

Electron cyclotron resonance microwave plasma deposition of a-Si:H and a-SiC:H films

The paper reports electron cyclotron resonance (ECR) deposition of a-Si:H and a-SiC:H thin films using SiH4, CH4, and hydrogen mixed gas plasmas. The ECR deposition conditions were investigated in the pressure region of 0.1 to 100 mtorr, and the film properties were characterized by light and dark conductivity measurements, XRD, Raman spectroscopy, optical transmission, and IR spectroscopy. In addition, the hydrogen dilution effect on ECR-deposited a-SiC:H was investigated.

Shing, Y. H.↗

NASA NTRS1993

Oscillator strengths of the Si II 181 nanometer resonance multiplet

We report Si II experimental log (gf)-values of -2.38(4) for the 180.801 nm line, of -2.18(4) for the 181.693 nm line, and of -3.29(5) for the 181.745 nm line, where the number in parentheses is the uncertainty in the last digit. The overall uncertainties (about 10 percent) include the 1 sigma random uncertainty (about 6 percent) and an estimate of the systematic uncertainty. The oscillator strengths are determined by combining branching fractions and radiative lifetimes. The branching fractions are measured using standard spectroradiometry on an optically thin source; the radiative lifetimes are measured using time-resolved laser-induced fluorescence.

Bergeson, S. D.↗

NASA NTRS1993

EOL performance comparison of GaAs/Ge and Si BSF/R solar arrays

EOL power estimates for solar array designs are significantly influenced by the predicted degradation due to charged particle radiation. New radiation-induced power degradation data for GaAs/Ge solar arrays applicable to missions ranging from low earth orbit (LEO) to geosynchronous earth orbit (GEO) and compares these results to silicon BSF/R arrays. These results are based on recently published radiation damage coefficients for GaAs/Ge cells. The power density ratio (GaAs/Ge to Si BSF/R) was found to be as high as 1.83 for the proton-dominated worst-case altitude of 7408 km medium Earth orbit (MEO). Based on the EOL GaAs/Ge solar array power density results for MEO, missions which were previously considered infeasible may be reviewed based on these more favorable results. The additional life afforded by using GaAs/Ge cells is an important factor in system-level trade studies when selecting a solar cell technology for a mission and needs to be considered. The data presented supports this decision since the selected orbits have characteristics similar to most orbits of interest.

Woike, Thomas J.↗

NASA NTRS1993

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

Xing, G. C.↗

NASA NTRS1993

Formation of deoxidization products in iron ingot by the addition of Al, Si, and/or Mn (M-5)

The objective of this work is to examine the morphology, composition, and distribution of deoxidation products in iron and iron-10 percent Ni alloy ingots. The deoxidation agents Si, Mn, Al, and their mixtures are selected to investigate the formation mechanism of the deoxidation products and to compare the differences of oxide formation among these agents in microgravity. After the experiment in space, the tested specimens are going to be analyzed by the use of the latest physical and/or chemical analytical equipment, and the information obtained will be a great help for the comprehension of the formation of oxide inclusion in steel for practical purposes, and also for the study of the solidification mechanism theory in the theoretical field.

Fukazawa, Akira↗

NASA NTRS1993

The influence of a microgravity environment on the dendritic morphology during directional solidification of hypoeutectic Al-Si alloys

NASA grant NAGW-2540 provided the opportunity to evaluate and extend ongoing studies of directionally solidified Al-Si alloys. Microstructural development was further characterized in terms of solidification processing parameters; novel relationships between processing and development of dendrite trunk diameters and tertiary dendrite arm spacings were found. This has resulted in three publications (one in print, one in press, and one in review). Microstructural development under conditions of controlled acceleration during directional solidification has been investigated; this has culminated in a Master's degree and will be submitted for publication. The above work not only contributes to our understanding of solidification phenomena but also defines the processing parameters for a successful microgravity experiment while providing a data base to which mu g samples can be unequivocally compared and evaluated.

Grugel, Richard N.↗

NASA NTRS1994

Evaluation of a 256 x 256 Si:As IBC detector array for astronomy

256 x 256-element IBC Si:As arrays have been evaluated for applications in IR astronomy from space-borne platforms. Basic figures of merit were measured at IR flux levels simulating those expected in space-based astronomical observations. Results include dark current less than 20 e(-)/s, G-eta as high as 3.8, eta/beta of 20%, and read noise below 100 rms(e(-)).

Mckelvey, M. E.↗

NASA NTRS1994

The first large format SI:SB BIB arrays

The first 128x128 Si:Sb blocked impurity band (BIB) detectors, manufactured by Rockwell International, are sensitive detectors from 10 to at least 40 micrometers. While further work is required to make these arrays suitable for the low backgrounds of space infrared telescopes, they can be used now for observations from the ground and aircraft.

Van Cleve, J. E.↗

NASA NTRS1994

Atomic data from the iron project. 3: Rate coefficients for electron impact excitation of boron-like ions: Ne VI, Mg VIII, Al IX, Si X, S XII, Ar XIV, Ca XVI and Fe XXII

Collison strengths and maxwellian averaged rate coefficients have been calculated for the 105 transitions among all 15 fine structure levels of the 8 LS terms 2s(sup 2) 2 P(P-2(sup 0 sub 1/, 3/2)), 2s2p(sup 2)(P-4(sub 1/2,3/2,5/2), D-2(sub 3/2, 5/2), S-2(sub 1/2), P-2(sub 1/2, 3/2)), 2p(sup 3)(S-4(sup 0)(sub 3/2), D-2(sup 0 sub 3/2, 5/2), P-2(sup 0 sub 1/2, 3/2)) in highly- charged B-like Ne, Mg, Al, Si, S, Ar, Ca and Fe. Rate coefficients have been tabulated at a wide range of temperatures, depending on the ion charge and abundance in plasma sources. Earlier work for O IV has also been extended to include the high temperature range. A brief discussion of the calculations, sample results, and comparison with earlier works is also given. While much of the new data should be applicable to UV spectral diagnostics, the new rates for the important ground state fine structure transition P-2(sup 0 sub 1/2)-P-2(sup 0 sub 3/2) should result in significant revision of the IR cooling rates in plasmas where B-like ions are prominent constituents, since the new rate coefficients are generally higher by several factors compared with the older data.

Zhang, Hong Lin↗

NASA NTRS1991

Concentration transient analysis of antimony surface segregation during Si(100) molecular beam epitaxy

Antimony surface segregation during Si(100) molecular beam epitaxy (MBE) was investigated at temperatures T(sub s) = 515 - 800 C using concentration transient analysis (CTA). The dopant surface coverage Theta, bulk fraction gamma, and incorporation probability sigma during MBE were determined from secondary-ion mass spectrometry depth profiles of modulation-doped films. Programmed T(sub s) changes during growth were used to trap the surface-segregated dopant overlayer, producing concentration spikes whose integrated area corresponds to Theta. Thermal antimony doping by coevaporation was found to result in segregation strongly dependent on T(sub s) with Theta(sub Sb) values up to 0.9 monolayers (ML): in films doped with Sb(+) ions accelerated by 100 V, Theta(sub Sb) was less than or equal to 4 x 10(exp -3) ML. Surface segregation of coevaporated antimony was kinematically limited for the film growth conditions in these experiments.

Markert, L. C.↗