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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Orientation-tunable local crystallization of Si films enabled by atomic imprint crystallization

Here, in this paper, we demonstrate area-selective crystallization of amorphous Si into tunable crystal orientations enabled by atomic imprint crystallization (AIC), where an amorphous Si layer is crystallized by solid phase epitaxy (SPE) from an externally impressed single-crystalline Si template. Using micro-patterned single-crystalline Si templates, a limited area of an amorphous Si film, where the film surface and patterned template surface are in contact, is crystallized via SPE to create an array of crystallographically aligned dots embedded in amorphous matrix. Combining AIC from the top surface and conventional SPE from the substrate, we demonstrate the fabrication of an array of crystalline dots embedded in single-crystalline matrix with tunable in-plane rotation angle. The results indicate the high tunability of the crystallization process enabled by AIC, allowing precise control of crystallographic properties of thin films with area-selectivity; such capability opens opportunities for the design of new materials for a wide range of applications in materials science.

Amorphous↗
DOE OSTI2026

Influence of minor Ce additions on magnetic and electrical properties in Fe–6.5 wt. % Si alloy

Fe–6.5 wt. % Si alloys exhibit lower core loss at higher frequency than the dominating electrical steel containing 3.2% Si due to its lower magneto-crystalline anisotropy energy (MAE) and higher electrical resistivity. However, compared to nanocrystalline and amorphous soft-magnetic materials, 6.5% Si steel, although being cost effective and having high saturation magnetization, still has much to improve, especially with respect to MAE and resistivity. To explore further improvement, the effects of minor Ce additions (due to its mixed valence 4f-electron configuration) on the microstructure, electrical and magnetic behaviors of Fe–6.5 wt. % Si alloys were investigated. Due to its limited solubility in Fe, Ce exhibits condition-dependent effects on electrical resistivity, showing only marginal improvement under rapid solidification. In contrast, Ce addition degrades magnetic performance, reducing saturation magnetization (from 1.86 to 1.76 T) and increasing coercivity (from 88 to 171 A/m), which results in an 83.4% increase in core loss (W 10/1000 condition). Overall, Ce addition provides limited benefit in electrical resistivity while deteriorating magnetic properties, making it ineffective for enhancing the soft magnetic performance of Fe–6.5 wt. % Si alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Structure of amorphous materials in the NASICON system Na 1+x Ti 2 Si x P 3−x O 12

Abstract The structure of glasses in the sodium (Na) super-ionic conductor (NASICON) system Na 1 + x Ti 2 Si x P 3 − x O 12 with x = 0.8 and x = 1.0 was explored by combining neutron and high-energy x-ray diffraction with 29 Si, 31 P and 23 Na solid-state nuclear magnetic resonance (NMR) spectroscopy. The 29 Si magic angle spinning (MAS) NMR spectra reveal that the silica component remains fully polymerized in the form of Si 4 units, i.e. the silicon atoms are bound to four bridging oxygen atoms. The 31 P{ 23 Na} rotational echo adiabatic passage double resonance (REAPDOR) NMR data suggest that the 31 P MAS NMR line shape originates from four-coordinated P n units, where n = 1, 2 or 3 is the number of bridging oxygen atoms per phosphorus atom. These sites differ in their 31 P- 23 Na dipolar coupling strengths. The results support an intermediate range order scenario of a phosphosilicate mixed network-former glass in which the phosphate groups selectively attract the Na + modifier ions. Titanium takes a sub-octahedral coordination environment with a mean Ti–O coordination number of 5.17(4) for x = 0.8 and 4.86(4) for x = 1.0. A mismatch between the P–O and Si–O bond lengths of 8% is likely to inhibit the incorporation of silicon into the phosphorus sites of the NASICON crystal structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Valence 1⁢𝑠−0⁢𝑑 proton vacancy of the 32 Si ground state

The 32 Si( 3 He,d) 33 P reaction was studied in inverse kinematics at 6.3 MeV/u. States in 33 P corresponding to the proton 1s-0d single-particle orbitals were identified up to ≈ 4.5 MeV in excitation energy. The ( 3 He,d) spectroscopic factors were determined from distorted-wave Born approximation calculations. When combined with complementary neutron-adding data, the 1s-0d proton vacancies in the 32 Si ground state were extracted. In conjunction with a reanalysis of data from previous single-particle measurements, the trends in proton and neutron vacancy were explored across the 28,30,32,34 Si isotopes. Both proton and neutron vacancy data show gradual changes in their occupancies. The proton 1s 1/2 orbitals in 32 Si and 34 Si are both consistent with being empty. In conclusion, the ground-state nucleon distributions are described by shell-model calculations constrained to the 1s-0d model space.

Watwood, N. [Argonne National Laboratory (ANL), Ar↗
DOE OSTI2020

Large spin Hall effect in Si at room temperature

Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin Hall effect (spin current generation) and inverse spin Hall effect (spin current detection). In this work, we undertake current, magnetic field, crystallography dependent magnetoresistance, and magnetothermal transport measurements to study the spin transport behavior in freestanding Si thin films. We observe a large spin Hall magnetoresistance in both $\mathcal{p}$ – Si and $\mathcal{n}$ – Si at room temperature and it is an order of magnitude larger than that of Pt. One explanation of the unexpectedly large and efficient spin Hall effect is spin-phonon coupling instead of spin-orbit coupling. The macroscopic origin of the spin-phonon coupling can be large strain gradients that can exist in the freestanding Si films. This discovery in a light, earth abundant and centrosymmetric material opens a new path of strain engineering to achieve spin dependent properties in technologically highly developed materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Polaronic transport and thermoelectricity in Mn 3 Si 2 Te 6 single crystals

Here, we carried out a comprehensive study of the structural, electrical transport, thermal, and thermodynamic properties in ferrimagnetic Mn 3 Si 2 Te 6 single crystals. Mn and Te K -edge x-ray absorption spectroscopy and synchrotron powder x-ray diffraction were measured to provide information on the local atomic environment and the average crystal structure. The dc and ac magnetic susceptibility measurements indicate a second-order paramagnetic to ferrimagnetic transition at T c ~ 74 K, which is further confirmed by the specific heat measurement. Mn 3 Si 2 Te 6 exhibits semiconducting behavior along with a large negative magnetoresistance of -87% at T c and a relatively high value of thermopower up to ~10 mV/K at 5 K. Besides the rapidly increasing resistivity ρ(T) and thermopower S(T) below 20 K, the large discrepancy between the activation energy for resistivity E ρ and thermopower E S above 20 K indicates the polaronic transport mechanism. Furthermore, the thermal conductivity κ(T) of Mn 3 Si 2 Te 6 is notably rather low, comparable to Cr 2 Si 2 Te 6 , and is strongly suppressed in the magnetic field across T c , indicating the presence of strong spin-lattice coupling, also similar with Cr 2 Si 2 Te 6 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Cross-shell excited configurations in the structure of 34 Si

The cross-shell excited states of 34 Si have been investigated via β decays of the 4 − ground state and the 1 + isomeric state of 34 Al. Since the valence protons and valence neutrons occupy different major shells in the ground state as well as the intruder 1 + isomeric state of 34 Al, intruder levels of 34 Si are populated via allowed β decays. Spin assignments to such intruder levels of 34 Si were established through γ-γ angular correlation analysis for the negative-parity states. The configurations of such intruder states play crucial roles in our understanding of the N = 20 shell gap evolution. A configuration interaction model derived from the FSU Hamiltonian was utilized in order to interpret the intruder states in 34 Si. Furthermore, shell model interaction derived from a more fundamental theory with the valence space in medium similarity renormalization group method was also employed to interpret the structure of 34 Si.

20 ≤ A ≤ 38↗
DOE OSTI2020

Tuning the structural and antiferromagnetic phase transitions in UCr 2 Si 2 : Hydrostatic pressure and chemical substitution

Structural phase transitions in $\textit{f}$-electron materials have attracted sustained attention both for practical and basic science reasons, including the fact that they offer an environment to directly investigate relationships between structure and the $\textit{f}$-state. Here we present results for UCr 2 Si 2 , where structural (tetragonal → monoclinic) and antiferromagnetic phase transitions are seen at $T_S$ = 205 K and $T_N$ = 25 K, respectively. We also provide evidence for an additional second-order phase transition at $T_X$ = 280 K. We show that $T_X$, $T_S$, and $T_N$ respond in distinct ways to the application of hydrostatic pressure and Cr → Ru chemical substitution. In particular, hydrostatic compression increases the structural ordering temperature, eventually causes it to merge with $T_X$, and destroys the antiferromagnetism. In contrast, chemical substitution in the series UCr 2– x Ru x Si 2 suppresses both $T_S$ and $T_N$, causing them to approach zero temperature near $\textit{x}$ ≈ 0.16 and 0.08, respectively. The distinct $\textit{T–P}$ and ${T–x}$ phase diagrams are related to the evolution of the rigid Cr-Si and Si-Si substructures, where applied pressure semiuniformly compresses the unit cell, and Cr → Ru substitution results in uniaxial lattice compression along the tetragonal $\textit{c}$-axis and an expansion in the $\textit{ab}$-plane. These results in this work provide insights into an interesting class of strongly correlated quantum materials in which degrees of freedom associated with $\textit{f}$-electron magnetism, strong electronic correlations, and structural instabilities are readily controlled.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Crystal growth and magnetic structure of ternary silicide Eu Pd 3 Si 2

The hexagonal CaCu 5 –type structure (P6/mmm) is the prototype for more than 100 ternary borides, gallides, and silicides, with general stoichiometry of RTM 3 X 2 (R=lanthanide/alkaline earth; TM=transition metal; X=B, Ga, Si, Ge). Here we report the synthesis, crystal structure, and bulk magnetic properties of polycrystalline and single crystal samples of EuPd 3 Si 2 and its nonmagnetic analog SrPd 3 Si 2 . Both compounds crystallize in the orthorhombic space group symmetry Imma (no. 74, Z = 2, oI12) displaying pseudohexagonal symmetry. Ferromagnetic (FM) order of Eu 2+ at T C1 =78K and a spin-reorientation transition at T C2 =5K appear as distinctive features in bulk magnetization, specific heat, and resistivity/resistance measurements. Neutron powder diffraction measurements on EuPd 3 Si 2 confirm FM order of the Eu 2+ spins below T C1 , with the spins aligned along the a axis below T C2 . Electronic band structure calculations corroborate the crystal structure and the FM state for EuPd 3 Si 2 , with a Pd d–band polarization in the same direction as the Eu 4f polarization, enhancing the observed spin moment.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Measurement of the 28 Si ⁢(𝑛,𝑛′⁢𝛾) cross section with 𝑛, 𝛾, and correlated 𝑛−𝛾 angular distributions

Silicon has become an unavoidable element in the circuitry central to everyday life. In turn, the interactions of silicon isotopes with neutrons for nuclear physics applications, among other motivations, have become increasingly important to understand. The dominant isotope of silicon, 28 Si, is thus of primary interest for enhanced understanding for neutron transport calculations and related investigations. Unfortunately, the existing measurement database for neutron scattering reactions on 28 Si is minimal, and nuclear data evaluations on this topic have not been updated for decades. This article details new measurements of the 28 Si ⁢(𝑛,𝑛′⁢𝛾) reaction utilizing multiple analysis methods available within the correlated gamma neutron array for scattering (CoGNAC). Specifically, high-precision near-threshold results and high-incident-energy results were obtained using the 𝛾-only and correlated 𝑛−𝛾 techniques. First-ever measurements of the correlated 𝑛−𝛾 angular distribution for particles emitted following population of the first excited state in 28 Si were obtained as well, which provide unique insight into theoretical descriptions of the inelastic neutron scattering reaction mechanism itself and detailed guidance for nuclear reaction models. The results agree well with literature data where they exist, and substantially expand on the current database for neutron reactions on 28 Si .

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Clarifying the 𝑁,𝑍 = 14 Shells near the Drip Lines from the Spectroscopy of 22 Si and 21 Al

Evidence for a (sub)-shell closure at 𝑍 = 14 has been observed from the spectroscopy of 22 Si and 21 Al . Using a fast 23 Si beam on a 9 Be target, several proton-decaying resonances have been populated in 21 Al and 22 Si , including the first measurement of the 2$^{+}_{1}$ state in 22 Si with an excitation energy of 2.352(55) MeV. Relative to the known 𝑁 = 14 subshell closure in 22 O , the 22 Si 2$^{+}_{1}$ excitation energy indicates the existence of a weakened 𝑍 = 14 subshell closure. To reproduce the new spectroscopic information and known 22 Al levels, the energy of the 1⁢𝑠 1/2 orbit must be substantially decreased, which imparts Thomas-Ehrman shifts to all excited states observed in the present Letter and explains the structure of nuclei in the 𝑠⁢𝑑 shell for this region of the proton drip line.

20 ≤ A ≤ 38↗
DOE OSTI2022

Self-Aligned Selective Area Front Contacts on Poly -Si/SiO x Passivating Contact c -Si Solar Cells

We report both polarity poly-Si/SiO x passivating contacts in a front/back device configuration may represent the next solar cell architecture after tunnel oxide passivating contacts (TOPCon) cells, but high parasitic absorption in the front poly -Si layer often limits its performance. This work explores a wet etching technique to remove the front poly -Si in the nonmetallized regions using self-aligned metal grids as an etch mask. We systematically examine various dielectric layers (SiN x ,Al 2 O 3 , and stacks thereof) to study the repassivation of the etched n + surface, and find that an SiN x /Al 2 O 3 passivation stack can effectively repassivate the etched surface, which we attribute to field-effect passivation from the positive fixed charge from the SiN x layer, and excellent chemical passivation property from Al 2 O 3 in the form of atomic H. We demonstrate a front/back poly-Si/SiO x passivating contact device, with an open-circuit voltage (V oc ) of 690 mV, short-circuit current density (J sc ) of 39.8 mA/cm 2 , fill factor of 78%, and power conversion efficiency of 21.4%. Furthermore, simulations using SunSolve and Quokka 3 show good agreement with both the optical and electrical properties of the experimental device. The power loss analysis reveals improvements in the optical loss from the back Ti adhesion and front SiN x layers would lead to a 23.5% device. Lastly, a techno-economic model compares the production cost of this improved cell with the current TOPCon cells. Our results highlight that further cost reductions in single-sided doped poly -Si layers are needed to compete with mainstream passivated emitter and rear cell, and TOPCon technologies.

14 SOLAR ENERGY↗
DOE OSTI2023

Near-surface damage and mixing in Si-Cl 2 -Ar atomic layer etching processes: Insights from molecular dynamics simulations

Silicon-chlorine-argon (Si-Cl 2 -Ar) atomic layer etching (ALE) is simulated using classical molecular dynamics (MD). The simulations provide a detailed view into the near-surface region during ALE processing. Bombardment of Ar + ions creates a mixed amorphous region that significantly differs from the picture of ideal ALE. There is also a significant change in the Si etch yield and the etch product distribution as a function of Ar + ion fluence. The Si etch yield is the highest at the beginning of the bombardment step but eventually decays to the physical sputtering yield. Atomic Cl and silicon chlorides are major etch products at the start of an ion bombardment step, but quickly decay. Atomic Si yields remain relatively constant as a function of Ar + ion fluence. As a result, a new schematic of Si-Cl 2 -Ar ALE is presented in order to emphasize the complex behavior observed in MD simulations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Progress Towards Extended Cycle Life Si-based Anodes: Investigation of Fluorinated Local High Concentration Electrolytes

Silicon (Si) anodes are promising candidates for Li-ion batteries due to their high specific capacity and low operating potential. Implementation has been challenged by the significant Si volume changes during (de)lithiation and associated growth/regrowth of the solid electrolyte interphase (SEI). In this report, fluorinated local high concentration electrolytes (FLHCEs) were designed such that each component of the electrolyte (solvent, salt, diluent) is fluorinated to modify the chemistry and stabilize the SEI of high (30%) silicon content anodes. FLHCEs were formulated to probe the electrolyte salt concentration and ratio of the fluorinated carbonate solvents to a hydrofluoroether diluent. Higher salt concentrations led to higher viscosities, conductivities, and contact angles on polyethylene separators. Electrochemical cycling of Si-graphite/NMC622 pouch cells using the FLHCEs delivered up to 67% capacity retention after 100 cycles at a C/3 rate. Post-cycling X-ray photoelectron spectroscopy (XPS) analyses of the Si-graphite anodes indicated the FLHCEs formed a LiF rich solid electrolyte interphase (SEI). The findings show that the fluorinated local high concentration electrolytes contribute to stabilizing the Si-graphite electrode over extended cycling.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Pushing the efficiency limit of low-cost, industrially relevant Si solar cells to > 22.5% by advancing cell structures and technology innovations (Final Report)

The overall objective of this program is to achieve ~23% bifacial n-type cell efficiencies by developing and implementing optimized homogeneous or selective boron (B) emitter on front and tunnel oxide passivated contact (TOPCon) on rear side, in combination with advanced fine-line screen-printing metallization with floating busbars. During this research project, first we developed a technology roadmap to drive the 21% n-PERT cell efficiency from 21% to 23% by transforming the cell design to n-TOPCon and establishing the requirements for each layer, including B emitter, rear n-TOPCon, n-base Si and screen-printed contacts. Next, consistent with our roadmap, we developed advanced homogeneous implanted B emitter (150-180 Ω/⌫) passivated with ALD Al 2 O 3 layer capped with PECVD SiN x /SiO x double-layer antireflection coating This gave a very low recombination current density of 10-15 fA/cm 2 prior to metallization. In addition, we demonstrated metallized recombination current density of ~31 fA/cm 2 for this advanced homogeneous B emitter with industrial screen-printed, fire-through contacts with 40 μm wide grid lines, floating busbars and implementation of an advanced Ag-Al paste which resulted in local or reduced area metal-Si contact under the grid lines with virtually no emitter surface etching. This paste reduced the full area metallized J oe,metal from >1100 fA/cm 2 to ~700 fA/cm 2 . We also developed novel processes for the formation of p + /p ++ selective B emitter by a) single B diffusion with selective etch back and b) two-steps diffusion with implanted B in field region and APCVD B diffusion under the metal grid. We achieved very low un-metallized recombination current density (J 0 ) of ~18 fA/cm 2 for the selective p ++ p + emitters (30/150 Ω/⌫) and metallized J 0 of ~28 fA/cm 2 with ~3% screen-printed metal contact to p ++ regions. Next, we developed the technology for n-TOPCon by growing phosphorus-doped LPCVD and PECVD poly-Si on top of ~ 15Å chemically grown (NAO) tunnel oxide. After an optimized anneal at 875 °C for 30 min, passivated n-TOPCon have unmetallized J 0 of ~ 5 fA/cm 2 which went down further to ~ 1 fA/cm 2 after a 700 Å SiN x capping layer and simulated contact firing cycle at 770 °C. After screen-printed fire-through metallization on this n-TOPCon with ~13% metal coverage, metallized J 0 value increased to only ~5 fA/cm 2 which is among the lowest reported value to the best of our knowledge for screen-printed metallization. Finally, we integrated all the above technology innovations and enhancements and demonstrated low-cost manufacturable screen-printed n-TOPCon bifacial Si solar cell with ~23% efficiencies. Based on the experimental and theoretical understanding developed in this project, we have developed a new technology roadmap that shows that implementation of busbarless contacts, 10-20 ms bulk lifetime Si, and selective B emitter or selective TOPCon on the front can drive ~23% efficient cells achieved in this research to ~25% at low-cost.

14 SOLAR ENERGY↗
DOE OSTI2023

Design of Monolithic Bi-Layer High-Z PAL-Si Hard X-ray CMOS Image Sensors for Quantum Efficiency Enhancement

This article experimentally investigates the inception of an innovative hard X-ray photon energy attenuation layer (PAL) to advance high-energy X-ray detection (20–50 keV). A bi-layer design with a thin film high-Z PAL on the top and Si image sensor on the bottom has previously demon-strated quantum yield enhancement via computational methods by the principle of photon energy down conversion (PEDC), where high-energy X-ray photon energies are attenuated via inelastic scattering down to ≤10 keV, which is suitable for efficient photoelectric absorption by Si. Quantum yield enhancement has been experimentally confirmed via a preliminary demonstration using PAL-integrated Si-based CMOS image sensors (Si CIS). Furthermore, substituting the high-Z PAL with a lower-Z material—Sn—and alternatively coupling it with a conventional scintillator ma-terial—Lutetium-yttrium oxyorthosilicate (LYSO)—have been compared to demonstrate the most prominent efficacy of monolithic integration of high-Z PAL on Si CIS to detect hard X-rays, paving the way for next-generation high-energy X-ray detection methods.

47 OTHER INSTRUMENTATION↗
NASA NTRS1973

Recombination luminescence from electron-irradiated Li-diffused Si

Lithium doping has a dramatic effect on the low-temperature photoluminescence of electron-irradiated Si. In oxigen-lean Si with Li doping, a new irradiation-dependent luminescence band between 0.75 and 1.05 eV is observed, which is dominated by a zero-phonon peak at 1.045 eV. This band is believed to be due to radiative transitions involving a Li-modified divacancy. This band is present also in oxygen-rich, Li-diffused Si and is accompanied by bands previously related to the Si-G15(K) center and the divacancy. The intensities of the Li-modified divacancy and Si-G15(K) center bands are relatively weak in the oxygen-rich material, apparently due to the formation of lithium-oxygen complexes which reduce the concentration of unassociated interstitial Li and O.

Johnson, E. S.↗
NASA NTRS1980

Si-rich Fe-Ni grains in highly unequilibrated chondrites

Consideration is given to the Si contents of Fe-Ni grains in highly unequilibrated chondrites, which have undergone little metamorphosis and thus best preserve the record of processes in the solar nebula. Electron microprobe determinations of silicon content in grains of the Bishunpur chondrite are presented for the six Si-bearing Fe-Ni grains for which data could be obtained, five of which were found to be embedded in olivine chondrules. In addition, all grains are found to be Cr-rich, with Cr increased in concentration towards the grain edge, and to be encased in FeS shells which evidently preserved the Si that entered the FeNi at higher temperatures. A mechanism for the production of Si-bearing metal during the condensation of the cooling solar nebula is proposed which considers the metal to have condensed heterogeneously while the mafic silicates condensed homogeneously with amounts of required undercooling in the low-pressure regions where ordinary and carbonaceous chondrites formed, resulting in Si mole fractions of 0.003 at nebular pressures less than 0.000001 atm.

Rambaldi, E. R.↗