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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Layer and material-type dependent photoresponse in Se 2 /WS 2 vertical heterostructures

Transition metal dichalcogenide (TMD) heterostructures are promising for a variety of applications in photovoltaics and photosensing. Successfully exploiting these heterostructures will require an understanding of their layer-dependent electronic structures. However, there is no experimental data demonstrating the layer-number dependence of photovoltaic effects (PVEs) in vertical TMD heterojunctions. Here, by combining scanning electrochemical cell microscopy (SECCM) with optical probes, we report the first layer-dependence of photocurrents in WSe 2 /WS 2 vertical heterostructures as well as in pristine WS 2 and WSe 2 layers. For WS 2 , we find that photocurrents increase with increasing layer thickness, whereas for WSe 2 the layer dependence is more complex and depends on both the layer number and applied bias (V b ). Further, we find that photocurrents in the WSe 2 /WS 2 heterostructures exhibit anomalous layer and material-type dependent behaviors. Our results advance the understanding of photoresponse in atomically thin WSe 2 /WS 2 heterostructures and pave the way to novel nanoelectronic and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Artificial intelligence for advanced functional materials: exploring current and future directions

This perspective addresses the topic of harnessing the tools of artificial intelligence (AI) for boosting innovation in functional materials design and engineering as well as discovering new materials for targeted applications in energy storage, biomedicine, composites, nanoelectronics or quantum technologies. It gives a current view of experts in the field, insisting on challenges and opportunities provided by the development of large materials databases, novel schemes for implementing AI into materials production and characterization as well as progress in the quest of simulating physical and chemical properties of realistic atomic models reaching the trillion atoms scale and with near ab initio accuracy.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Machine learning-based interatomic potential development and phase transition analysis of ferroelectric hafnium dioxide

The ferroelectric phase (𝑃⁢𝑐⁢𝑎⁢2 1 , which is in orthorhombic symmetry) of hafnium dioxide (HfO 2 ) has gained much attention due to its potential applications in nanoelectronics and advanced memory devices. However, its complex phase behavior under external stimuli, such as pressure and temperature, remains a subject of intense investigation. This study focuses on developing a machine learning-based interatomic potential (MLIP) that is trained with data from density-functional theory (DFT) calculations to simulate phase transitions and mechanical properties of HfO 2 . The developed MLIP predicts lattice parameters, equations of state, bulk and shear moduli, and elastic constants that closely align with DFT predictions for several phases and at various pressures. Once validated, the MLIP is used to investigate the phase transitions of ferroelectric HfO 2 (𝑃⁢𝑐⁢𝑎⁢2 1 ) under both isobaric and constant stress conditions at elevated temperatures ranging from 200 to 2500 K. We used several complementary methods, including local symmetry identification, radial distribution function, and x-ray diffraction characterization, to identify interesting phase transitions among several competitive hafnia phases predicted from our simulations. The suggested methods uniformly reveal that under pure deviatoric condition, the system favors a transition from the orthorhombic 𝑃⁢𝑐⁢𝑎⁢2 1 phase to a tetragonal (𝑃⁢4 2 /𝑛⁢𝑚⁢𝑐) phase, whereas a zero stress condition drives the system from the 𝑃⁢𝑐⁢𝑎⁢2 1 phase to another orthorhombic (𝑃⁢𝑏⁢𝑐⁢𝑛) phase. These findings provide crucial insights into stress and temperature-induced phase behavior of hafnia, guiding future experimental and theoretical studies for optimizing hafnia-based ferroelectric devices.

Ferroelectric HfO2↗
DOE OSTI2019

Engineering Nanoscale Thermal Transport: Size- and Spacing-Dependent Cooling of Nanostructures

Nanoscale thermal transport is becoming ever more technologically important with the development of next-generation nanoelectronics, nanomediated thermal therapies, and high efficiency thermoelectric devices. However, direct experimental measurements of nondiffusive heat flow in nanoscale systems are challenging, and first-principle models of real geometries are not yet computationally feasible. In recent work, we used ultrafast pulses of short-wavelength light to uncover a previously-unobserved regime of nanoscale thermal transport that occurs when the width and separation of heat sources are comparable to the mean free paths of the dominant heat-carrying phonons in the substrate. We now systematically compare thermal transport from gratings of metallic nanolines with different periodicities, on both silicon and fused-silica substrates, to map the entire nanoscale thermal transport landscape – from closely spaced through increasingly isolated to fully isolated heat-transfer regimes. By monitoring the surface profile dynamics with subangstrom sensitivity, we directly measure thermal transport from the nanolines into the substrate. This allows us to quantify for the first time how the nanoline separation significantly impacts thermal transport into the substrate, making it possible to reach efficiencies that are within a factor of 2 of the diffusive (i.e., thin-film) limit. We also show that partially isolated nanolines perform significantly worse, because cooling occurs in a regime that is intermediate between close-packed and fully isolated heat sources. This work thus confirms the surprising prediction that closely spaced nanoscale heat sources can cool more quickly than when far apart. In conclusion, these results show that our predictive model is validated by experiment over a broad parameter space, which is important for benchmarking theories that go beyond the Fourier model of heat diffusion, and for informed design of nanoengineered systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Correlation Between Corrugation-Induced Flexoelectric Polarization and Conductivity of Low-Dimensional Transition Metal Dichalcogenides

The tunability of polar and semiconducting properties of low-dimensional transition metal dichalcogenides (TMDs) have propelled them to the forefront of fundamental and applied physical research. These materials can vary their electrophysical properties from nonpolar to ferroelectric, and from direct-band semiconducting to metallic. In addition to classical controlling factors, such as field effect, composition, and doping, new degrees of freedom emerge in TMDs due to the curvature-induced electron redistribution and the associated changes in electronic properties. Here we theoretically explore the elastic and electric fields, flexoelectric polarization and free charge density for a TMD nanoflake placed on a rough substrate with a sinusoidal corrugation profile. Finite element modelling results for different flake thickness and corrugation depth yield insights into the flexoelectric nature of the out-of-plane electric polarization and establish the unambiguous correlation between the polarization and static conductivity modulation. The modulation is caused by the coupling between the deformation potential and inhomogeneous elastic strains, which evolve in the TMD nanoflake due to the adhesion between the flake surface and corrugated substrate. We reveal a pronounced maximum in the thickness dependences of the electron and hole conductivity of MoS 2 and MoTe 2 nanoflakes placed on a corrugated substrate, which opens the way for the optimization of their geometry towards significant improvement in their polar and electronic properties, necessary for advanced applications in nanoelectronics and memory devices. Specifically, the obtained results can be useful for the development of nanoscale straintronic devices based on the bended MoS 2 , MoTe 2 , and MoSTe nanoflakes, such as diodes and bipolar transistors with a bending-controllable sharpness of p-n junctions.

42 ENGINEERING↗
DOE OSTI2015

Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching

The effect of polarization rotation on the performance of metal-oxide-semiconductor field-effect transistors is investigated with a Landau-Ginzburg-Devonshire theory-based model. In this analytical model, the depolarization field, polarization rotations, and electrostatic properties of the doped silicon substrate are considered to illustrate the size effect of ferroelectric oxides and the stability of polarization in each direction. Based on this model, we provide guidance in designing electronic logic devices with low operating voltages and low active-energy consumption: First, we demonstrate that MOSFET operation could be achieved by polarization reorientation with a low operating voltage, if the thickness of the ferroelectric oxide is properly selected. Polarization reorientation can boost the surface potential of the silicon substrate, leading to a subthreshold swing S lower than 60mV/decade. We also demonstrate that, compared with polarization inversion, polarization rotation offers significant advantages, including a lower energy barrier and a wider range of transferability in nanoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Structural phase transitions in a MoWSe 2 monolayer: Molecular dynamics simulations and variational autoencoder analysis

Electrical and optoelectronic properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs) can be tuned by exploiting their structural phase transitions. Here semiconducting (2H) to metallic (1T) phase transition is investigated in a strained MoWSe 2 monolayer using molecular dynamics (MD) simulations. Novel intermediate structures called α and β are found between the 2H and 1T phases. These intermediate structures are similar to those observed in a 2D MoS 2 by scanning transmission electron microscopy. Here, a deep generative model, namely the variational autoencoder (VAE) trained by MD data, is used to generate novel heterostructures with α and β interfaces. Quantum simulations based on density functional theory show that these heterostructures are stable and suitable for novel nanoelectronics applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Protected helical transport in magnetically doped quantum wires: Beyond the one-dimensional paradigm

One-dimensional (1D) quantum wires, which are functionalized by magnetic ad-atoms, can host ballistic helical transport. Helicity protects transport from an undesirable influence of material imperfections and makes the magnetically doped wire very promising elements for nanoelectronics and spintronics. However, fabricating purely 1D conductors is experimentally very challenging and not always feasible. In this paper, we show that the protected helical transport can exist even inquasi-1D wires. We model the quasi-1D magnetically doped wire as two coupled dense 1D Kondo chains. Each chain consists of itinerant electrons interacting with localized quantum magnetic moments - Kondo impurities. We have analyzed the regimes of weak-, intermediate- and strong inter-chain coupling and found conditions necessary for the origin of the aforementioned protected transport. Our results give a push for experimental realizations of the helical states in magnetically doped wires.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Dynamic control of nonequilibrium metal-insulator transitions

Here, we demonstrate a first order metal-insulator phase transition in the repulsive, fully frustrated, single-band Hubbard model as a function of the coupling to a fermion bath. Time dependent manipulation of the bath coupling allows switching between metallic and insulating states both across the phase transition and within the coexistence region. We propose a simple nanoelectronic device for experimentally realizing dynamic control of the bath coupling. Analysis of the device characteristics shows that it can act as a two-terminal memristor.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Simulating transient heat transfer in graphene at finite Knudsen number via the Boltzmann transport equation and molecular dynamics

The phonon Boltzmann transport equation (BTE) with the relaxation time approximation (RTA) scattering model is used to calculate transient temperature profiles in graphene, and the results are compared to analogous molecular dynamics (MD) simulations. For the BTE calculations, the phonon dispersion relation and frequency-dependent scattering rates are obtained from a combination of MD data and semi-empirical power-law expressions for the normal and Umklapp phonon lifetimes. The dimensions and initial temperature conditions of graphene are varied to study the size and temperature dependence of thermal transport physics at the mesoscopic scale. Good quantitative agreement to within 5% is found between the BTE and MD results, over a wide range of temperatures and lengthscales of the temperature variation in the graphene sheet. Small differences are attributed to the inaccuracy of the RTA as applied to graphene, and to neglecting four-phonon scattering in the BTE simulations. The present results may further understanding in applications such as the transient heating of nanoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

GW band structure of monolayer MoS 2 using the SternheimerGW method and effect of dielectric environment

Monolayers of transition-metal dichalcogenides (TMD) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can affect the electronic and optical properties of these two-dimensional (2D) materials. Here, we perform many-body GW calculations using the SternheimerGW method to investigate the quasiparticle band structure of monolayer MoS 2 subject to an effective dielectric screening model, which is meant to approximately describe substrate polarization in real device applications. We show that, within this model, the dielectric screening has a sizeable effect on the quasiparticle band gap, for example the gap renormalization is as large as 250 meV for MoS 2 with model screening corresponding to SiO 2 . Within the G 0 W 0 approximation, we also find that the inclusion of the effective screening induces a direct band gap, in contrast to the unscreened monolayer. We also find that the dielectric screening induces an enhancement of the carrier effective masses by as much as 27% for holes, shifts plasmon satellites, and redistributes quasiparticle weight. Our results highlight the importance of the dielectric environment in the design of 2D TMD-based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Magnetic skyrmion diode: Unidirectional skyrmion motion via symmetry breaking of potential energy barriers

In this work, we realize a magnetic skyrmion diode operated by a unidirectional skyrmion transport that flows in only one direction, which is highly significant for information processing in spintronic and nanoelectronic devices. We easily control the skyrmion transport by engineering asymmetric shapes of geometric structures. Here, we present a simple method to describe the underlying mechanism behind the unidirectional skyrmion transport by characterizing the topography of potential energy surfaces from a purely geometric perspective. Our approach enables a deeper physical insight into skyrmion transport manipulation and efficient design of skyrmion-based devices in geometric structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Ferrorotational domain walls revealed by electric quadrupole second harmonic generation microscopy

Domain walls are ubiquitous in materials that undergo phase transitions driven by spontaneous symmetry breaking. Domain walls in ferroics and multiferroics have received tremendous attention recently due to their emergent properties distinct from their domain counterparts—for example, their high mobility and controllability, as well as their potential applications in nanoelectronics. However, it is extremely challenging to detect, visualize, and study the ferrorotational (FR) domain walls because the FR order, in contrast to ferromagnetism and ferroelectricity, is invariant under both the spatial-inversion and the time-reversal operations and, thus, hardly couple with conventional experimental probes. Here, a FR candidate NiTi⁢O 3 is investigated by ultrasensitive electric quadrupole (EQ) second-harmonic generation rotational anisotropy (SHG RA) to probe the point symmetries of the two degenerate FR domain states, showing their relation by the vertical mirror operations that are broken below the FR critical temperature. We then visualize the real-space FR domains by scanning EQ SHG microscopy, and further, resolve the FR domain walls by revealing a suppressed SHG intensity at the domain walls. By taking local EQ SHG RA measurements, we show the restoration of the mirror symmetry at FR domain walls and prove their unconventional nonpolar nature. In conclusion, our findings not only provide a comprehensive insight into FR domain walls, but also demonstrate a unique and powerful tool for future studies on domain walls of unconventional ferroics both of which pave the way towards future manipulations and applications of FR domain walls.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Electric field driven domain wall dynamics in BaTiO 3 nanoparticles

We report a detailed investigation into the response of single BaTiO 3 (BTO) nanocrystals under applied electric fields (E-field) using Bragg coherent diffraction imaging. Our study reveals pronounced domain wall migration and expansion of a sample measure under applied electric field. The changes are most prominent at the surface of the nanocrystal, where the lack of external strain allows greater domain wall mobility. The observed domain shifts are correlated to the strength and orientation of the applied E-field, following a side-by-side domain model from Suzana []. Notably, we identified a critical electric field strength of 3 MV/m, which leads to irreversible structural changes, suggesting plastic deformation. The findings highlight how surface effects and intrinsic defects contribute to the enhanced dielectric properties of BTO at the nanoscale, in contrast to bulk materials, where strain limits domain mobility. These findings deepen our understanding of nanoscale dielectric behavior and inform the design of advanced nanoelectronic devices. Published by the American Physical Society 2025

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Charge transport in DNA nanowires connected to carbon nanotubes

DNA is perhaps the worlds most controllable nanowire, with potential applications in nanoelectronics and sensing. However, understanding of its charge transport (CT) properties remains elusive, with experiments reporting a wide range of behaviors from insulating to superconductive. Here, we report extensive first-principle simulations that account for DNA's high flexibility and its native solvent environment. The results show that the CT along the DNA's long axis is strongly dependent on DNA's instantaneous conformation varying over many orders of magnitude. In high CT conformations, delocalized conductive states extending over up to 10 base pairs are found. Their low exponential decay constants further indicate that coherent CT, which is assumed to be active only over 2–3 base pairs in the commonly accepted DNA CT models, can act over much longer length scales. We also identify a simple geometrical rule that predicts CT properties of a given conformation with high accuracy. The effect of mismatched base pairs is also considered: while they decrease conductivities of specific DNA conformations, thermally induced conformational fluctuations wash out this effect. Overall, our results indicate that an immobilized partially dried poly(G)-poly(C) B-DNA is preferable for nanowire applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Quantum anomalous Hall effect in ferromagnetic transition metal halides

The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of intrinsic QAH insulators. However, up to now, it has only been observed in Cr or V doped (Bi,Sb) 2 Te 3 film in experiments with very low working temperature. Based on the successful synthesis of transition metal halides, we use first-principles calculations to predict that the RuI 3 monolayer is an intrinsic ferromagnetic QAH insulator with a topologically nontrivial global band gap of 11 meV. This topologically nontrivial band gap at the Fermi level is due to its crystal symmetry, thus the QAH effect is robust. Its Curie temperature, estimated to be ~360K using Monte Carlo simulation, is above room temperature and higher than most two-dimensional ferromagnetic thin films. The inclusion of Hubbard U in the Ru-d electrons does not affect this result. Furthemore, we also discuss the manipulation of its exchange energy and nontrivial band gap by applying in-plane strain. Our work adds an experimentally feasible member to the QAH insulator family, which is expected to have broad applications in nanoelectronics and spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Anisotropic charge density wave in layered 1 T - TiS e 2

We present a three-dimensional study on the anisotropy of the charge density wave (CDW) in 1T-TiSe 2 , by means of in situ atomically resolved electron microscopy at cryogenic temperatures in both reciprocal and real spaces. Using coherent nanoelectron diffraction, we observed short-range coherence of the in-plane CDW component while the long-range coherence of out-of-plane CDW component remains intact. An in-plane CDW coherence length of ~10 nm and an out-of-plane CDW coherence length of 17.5 nm, as a lower bound, were determined. The electron modulation was observed using electron energy-loss spectroscopy and verified by an orbital-projected density of states. Our integrated approach reveals anisotropic CDW domains at the nanoscale, and illustrates electron modulation-induced symmetry breaking of a two-dimensional material in three dimensions, offering an opportunity to study the effect of reduced dimensionality in strongly correlated systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Charged domain walls in improper ferroelectric hexagonal manganites and gallates

Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes, and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer multifunctional properties and an inherent stability not found in proper ferroelectrics. Here we study the energetics and structure of charged walls in improper ferroelectric YMnO 3 , InMnO 3 , and YGaO 3 by first-principles calculations and phenomenological modeling. Positively and negatively charged walls are asymmetric in terms of local structure and width. The wall width scales with the amplitude of the primary structural order parameter and the coupling strength to the polarization, reflecting that polarization is not the driving force for domain formation. We introduce general rules for how to engineer n - and p -type domain wall conductivity based on the domain size, polarization, and electronic band gap. Furthermore, this opens the possibility of fine tuning the local transport properties and designing p-n -junctions for domain wall-based nanocircuitry.

36 MATERIALS SCIENCE↗