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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Phase partitioning, crystal growth, electrodeposition and cosmic ray experiments in microgravity

Five experiments are contained in one Get Away Special Canister (5 cu ft). The first utilizes microgravity to separate biological cells and to study the mechanism of phase partitioning in 12 separate cuvettes. Two experiments are designed to grow organic crystals by physical vapor transport. One experiment consists of eight electroplating cells with various chemicals to produce surfaces electroplated in microgravity. Some of the surfaces have micron sized particles of hard materials co-deposited during electrodeposition. The fifth experiment intercepts cosmic ray particles and records their paths on photographic emulsions. The first four experiments are controlled by an on-board C-MOS controller. The fifth experiment is totally passive. These are the first in Space. Their purpose is to create new commercial products with microgravity processing.

Wessling, Francis C.↗
NASA NTRS1987

A 9 month long soft X-ray survey of the Large Magellanic Cloud. I - X-ray map at 1/4 keV

Data from the HEAO 1 low energy detector was used to map the diffuse 1/4 keV X-ray background around the LMC. Data was collected over 9 mos in 1977-1978 using detectors sensitive in the range 0.18-2.8 keV. Diffuse emission, rather than absorption, was observed from the LMC, as were two large emission (2 million K) regions with very low surface brightness. The regions coincided with the Shapley III supergiant shell of optical nebulosity and the LMC bar. Higher spatial resolution imagery is required if the emission features are to be confirmed as the same type of phenomena as the X-ray superbubble in Cygnus.

Singh, K. P.↗
NASA NTRS1987

Jovian electrons at 1 AU - 1978-1984

Data on Jovian electrons sensed with a spectrometer on board the ISEE spacecraft at 1 AU are studied in terms of intensity variations over time and shape and variations of the electron spectra with time. Design and performance features of the electron spectrometer are described. The analyses cover solar cycle modulation of intensity, the synodic intensity modulation, micromodulation over a period of days, and adiabatic deceleration of electrons propagating in the expanding solar wind. Emphasis is placed on the effects of maximum solar activity on Jovian electron emission and propagation, noting a confirmed 13 mos intensity variation in the Jovian electrons.

Moses, Dan↗
NASA NTRS1987

Full CI benchmark calculations for several states of the same symmetry

Full CI (FCI) wave functions are used to compute energies for several electronic states of the same symmetry for SiH2, CH2, and CH2(+). It is found that CASSCF/multireference CI wave functions yield results very similar to FCI, irrespective of whether the CASSCF MOs are optimized independently for each state or using an average of the CASSCF energies for all desired states. The ionization potentials and excitation energies obtained from the FCI calculations should help calibrate methods (such as Green's function approaches, equations of motion and propagator methods, and cluster expansions) in which energy differences are computed directly.

Bauschlicher, Charles W., Jr.↗
NASA NTRS1988

Detecting Space Dust Particles

Technique records times specific craters formed in targets exposed in space and permits determination of direction in which impacting particles traveled at times of impacts. MOS capacitor is short-circuited by impact of particle striking at high speed. After recovery of targets from space, compositions of impacting particles established through post-flight laboratory analyses of residual materials in craters. On earth technique has industrial and military uses in detection of fragments driven by explosions. Studies of orbital dynamics of particles produced by solid-propellant rocket-motor firings in space made using technique.

Kinard, William H.↗
NASA NTRS1987

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗
NASA NTRS1988

Electro optical performance of an improved deformable mirror device

The design, fabrication, and performance of an improved 128 x 128 deformable mirror device (DMD) are discussed. The present DMD consists of a monolithically formed array of cantilever beams which are electrostatically deflected by an underlying MOS transistor address matrix. In contrast to an earlier version, the improved DMD on-chip address circuitry supports a single video input to the chip, with all demux operations performed on-chip. The cantilever beams are formed by two layers of high-reflectivity aluminum alloy. The dynamic range of the DMD in the Fourier plane at the Nyquist frequency has been determined at greater than 45 dB.

Wu, Wen R.↗
NASA NTRS1988

Heavy ion induced Single Event Phenomena (SEP) data for semiconductor devices from engineering testing

The accumulation of JPL data on Single Event Phenomena (SEP), from 1979 to August 1986, is presented in full report format. It is expected that every two years a supplement report will be issued for the follow-on period. This data for 135 devices expands on the abbreviated test data presented as part of Refs. (1) and (3) by including figures of Single Event Upset (SEU) cross sections as a function of beam Linear Energy Transfer (LET) when available. It also includes some of the data complied in the JPL computer in RADATA and the SPACERAD data bank. This volume encompasses bipolar and MOS (CMOS and MHNOS) device data as two broad categories for both upsets (bit-flips) and latchup. It also includes comments on less well known phenomena, such as transient upsets and permanent damage modes.

Nichols, Donald K.↗
NASA NTRS1988

Monolithic watt-level millimeter-wave diode-grid frequency tripler array

In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.

Hwu, R. J.↗
NASA NTRS1989

Theoretical spectroscopic constants for the low-lying states of the oxides and sulfides of Mo and Tc

Spectroscopic results were determined for the ground and low-lying states of the oxides and sulfides of Mo and Tc, using the single-reference-based modified coupled pair functional method of Ahlrichs et al. (1985) and Chong et al. (1986) and the multireference-based state-averaged CASSCF/MRCI method. Spectroscopic constants, dipole moments, Mulliken populations, and radiative lifetimes were calculated for selected low-lying states of these molecular systems. The spectroscopy of the MoS and TcS molecules was found to be quite analogous to the corresponding oxides.

Langhoff, Stephen R.↗
NASA NTRS1989

Electron-beam induced damage in thin insulating films on compound semiconductors

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗
NASA NTRS1988

Compendium of meteorological space programs, satellites, and experiments

This compendium includes plans and events known to the authors through January 1987. Compilation of the information began in 1967. This document is intended: (1) as a historical record of all satellites and instrumentation that has been useful for meteorological research or operational uses; and (2) as a working document to be used to assist meteorologists in identifying meteorological satellites, locating data from these satellites, and understanding experiment operation which is related to satellite data that may be of interest to them. A summary of all known launched satellites for all countries and their experiments, which were concerned with meteorological operations or research, are included. Programs covered include AEM, Apollo, ATS, Bhaskara, Cosmos, Discoverer, DMSP, DOD, DODGE, EOLE, ERBE, ESSA, Explorer, Gemini, GMS, GOES/SMS, INSAT, IRS, LANDSAT, Mercury, Meteor 1 and 2, Meteosat, Molniya, MOS, Nimbus, NOAA (1-5)/ITOS, NOAA (6,7,D)/TIROS-N, NOAA (8-10, H-J)/ATN, Salyut, Seasat, Shuttle 1, Shuttle 2: Spacelab, Skylab, Soyuz, TIROS, TOPEX, Vanguard, Voskhod, Vostok, and Zond.

Dubach, Leland L.↗
NASA NTRS1990

Silicon carbide semiconductor device fabrication and characterization

A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.

Davis, R. F.↗
NASA NTRS1990

Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗
NASA NTRS1990

Influence of the deposition conditions on radiofrequency magnetron sputtered MoS2 films

By varying the radiofrequency (RF) power, the Ar pressure, and the potential on the substrates, MoS(x) films of various stoichiometry, density, adhesion, and morphology were produced. An increase of RF power increased the deposition rate and density of the MoS2 films as well as improved adhesion. However, the stoichiometry remained constant. An increase of Ar pressure increased the deposition rate but decreased the density, wheras both stoichiometry and adhesion were maximized at around 20 mtorr Ar pressure. Furthermore, a transition from compact film growth to columnar film growth was observed when the pressure was varied from 5 to 15 mtorr. Substoichiometric films were grown when a negative (bias) voltage was applied to the substrates.

Steinmann, Pierre A.↗
NASA NTRS1989

Ga:Ge array development

Work at the University of Arizona and at Lawrence Berkeley Laboratory on the development of a far infrared array camera for the Multiband Imaging Photometer on the Space Infrared Telescope Facility (SIRTF) is discussed. The camera design uses stacked linear arrays of Ge:Ga photoconductors to make a full two-dimensional array. Initial results from a 1 x 16 array using a thermally isolated J-FET readout are presented. Dark currents below 300 electrons s(exp -1) and readout noises of 60 electrons were attained. Operation of these types of detectors in an ionizing radiation environment are discussed. Results of radiation testing using both low energy gamma rays and protons are given. Work on advanced C-MOS cascode readouts that promise lower temperature operation and higher levels of performance than the current J-FET based devices is described.

Young, Erick T.↗
NASA NTRS1989

MCTs and IGBTs - A comparison of performance in power electronic circuits

There is a continuous demand for improvements in the quality of switching power devices, such as higher switching frequency, higher withstand voltage capability, larger current-handling capability, and lower conduction losses. However, for single-conduction-mechanism devices (SCRs, GTOs, BJTs, FETs), possessing all these features is probably unrealizable for physical reasons. An attractive solution appears to be double-mechanism devices, in which the features of both a minority carrier device (BJT or SCR) and a majority carrier device (MOSFET) are embedded. Both IGBTs (insulated-gate bipolar transistors) and MCTs (MOS-controlled thyristors) belong to this family of double-mechanism devices and promise to have a major impact on converter circuit signs. The authors deal with the major features of these two devices, pointing out those that are most critical to the design of converter topologies. In particular, the two devices have been tested both in a chopper and in two resonant link converter topologies, and the experimental results are reported.

Sul, S. K.↗