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335 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Strong-Drive Limits in Josephson Circuits: From Chaos to an Unbound-Resonance Threshold

Strong microwave drives enable fast measurement and parametric control in superconducting circuits but can induce transitions out of the intended low-energy manifold. We develop a unified description of strong-drive limits in flux- and charge-driven Josephson circuits across drive frequency and dc flux bias. Using classical phase-space analysis and Floquet--Markov simulations, we identify distinct low- and high-frequency mechanisms. At low frequency, we characterize bound-state resonances and separatrix chaos and find that the flux-drive chaos threshold depends strongly on dc flux bias. At high frequency, these mechanisms are suppressed, and the dissipative steady state transfers from the central bound-state sector to outer resonances formed by above-barrier running trajectories. The resulting unbound-resonance threshold is nearly independent of drive frequency and circuit parameters over the regime studied and is controlled primarily by dc flux bias. Coherent simulations show that parametric operation persists beyond this threshold, but at a reduced rate, setting an effective upper bound on the achievable operation speed. We derive analytical criteria for both thresholds, validate them numerically, and experimentally confirm the predicted dc-bias dependence of the low-frequency threshold in a flux-driven SQUID. We also determine the timescales for transfer into the unbound-resonance regime and relaxation back to the bound-state manifold after the drive is removed. Finally, we relate the stability limits to a complementary picture based on the junction critical current and extend the framework to multitone drives and inductively shunted circuits. Together, these results identify the mechanisms limiting strong driving and suggest routes to extend the stable operating range of Josephson circuits.

You, Xinyuan [Fermilab] (ORCID:0000000291789419)↗
DOE OSTI2020

Tunneling spectroscopy of c -axis epitaxial cuprate junctions

Atomically precise epitaxial structures are unique systems for tunneling spectroscopy that minimize extrinsic effects of disorder. We present a systematic tunneling spectroscopy study, over a broad doping, temperature, and bias range, in epitaxial c-axis La 2-x Sr x CuO 4 /La 2 CuO 4 /La 2-x Sr x CuO 4 heterostructures. The behavior of these superconductor/insulator/superconductor (SIS) devices is unusual. Down to 20 mK there is complete suppression of c-axis Josephson critical current with a barrier of only 2 nm of La 2 CuO 4 , and the zero-bias conductance remains at 20–30% of the normal-state conductance, implying a substantial population of in-gap states. Tunneling spectra show greatly suppressed coherence peaks. Furthermore, as the temperature is raised, the superconducting gap fills in rather than closing at T c . For all doping levels, the spectra show an inelastic tunneling feature at ~80 meV, suppressed as T exceeds T c . These nominally simple epitaxial cuprate junctions deviate markedly from expectations based on the standard Bardeen-Cooper-Schrieffer theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1977

A capacitively shunted superconducting microbridge

A superconducting microbridge small enough to exhibit the Josephson effect has been shunted by a large external capacitance. Surprisingly little capacitive hysteresis is observed in its I-V characteristic. Prominent subgap structures are seen. The resistively shunted junction (RSJ) model fails to explain the observations.

Chiao, R. Y.↗
NASA NTRS1992

Effect of an applied magnetic field on the performance of a SIS receiver near 300 GHz

A superconductor-insulator-superconductor (SIS) receiver has been successfully constructed and tested for operation at 265 - 280 GHz using 1 micron/sq area Nb-AlO(x)-Nb tunnel junctions fabricated at Stony Brook. The best performance to date is a double sideband (DSB) receiver noise temperature of 129 K at 278 GHz. It is found that suppression of the Josephson pair currents with a magnetic field is essential for good performance and a stable dc bias point. Fields as high as 280 gauss have been used with no degradation of mixing performance. The improvement in the intermediate frequency output stability with progressively increasing magnetic fields is illustrated.

Mallison, W. H.↗
NASA NTRS1985

Design of Cryocoolers for Microwatt Superconducting Devices

The primary applications of the cryocoolers are for cooling various Josephson devices such as SQUID magnetometers and amplifiers, voltage standards, and microwave mixers and detectors. The common feature of these devices is their extremely low inherent bias power requirement, of the order of 10/1 W per junction. This provides the possibility of designing compact, low-power cryocoolers for these applications. Several concepts were explored and a number of laboratory model cryocoolers were built. These include low-power nonmagnetic regenerative machines of the Stirling or Gifford-McMahon type, three or four-stage Joule-Thomson machines, liquid-helium dewars with integral small cryocoolers to reduce the evaporation rate, and liquid-helium dewars with integral continuously or intermittently operated small helium liquefiers to permit operation of cryogenic devices for indefinite time periods.

Zimmerman, J. E.↗
DOE OSTI2026

Transmon Qubit Using Sn as a Junction Superconductor

Superconductor qubits typically use aluminum–aluminum oxide tunnel junctions to provide the nonlinear inductance. Junctions with semiconductor barriers make it possible to vary the superconductor material and explore beyond aluminum. We use InAs semiconductor nanowires coated with thin superconducting shells of β-Sn to realize transmon qubits. By tuning the Josephson energy with a gate voltage, we adjust the qubit frequency over a range of 3 GHz. The longest energy relaxation time, T 1 = 27 μs, is obtained at the lowest qubit frequencies, while the longest echo dephasing time, T 2 = 1.8 μs, is achieved at higher frequencies. Finally, we assess the possible factors limiting coherence times in these devices and discuss steps to enhance performance through improvements in materials fabrication and circuit design.

B-Sn↗
NASA NTRS1991

YBa2Cu3O(7-delta)/Au/Nb sandwich geometry SNS weak links on c-axis oriented YBa2Cu3O(7-delta)

Sandwich geometry superconductor/normal metal/superconductor structures have been fabricated on LaAlO3 and cubic zirconia with laser-ablated, c-axis-oriented YBa2Cu3O(7-delta) base electrodes, 100-600 A of Au, and Nb counter electrodes, all formed in situ without breaking vacuum. Junctions range in size from 5 to 50 micron on a side. Four probe I-V measurements at 4.2 K show RnA products as low as 6 x 10 to the -9th sq cm and critical current densities up to 5.2 kA/sq cm. AC Josephson steps were observed with the application of 10-GHz radiation. The temperature dependence of Jc and the observation of the AC Josephson effect suggest that true supercurrents are present and that they do indeed represent the characteristics of the YBa2Cu3O(7-delta)/Au/Nb structure. The best results were obtained when the devices were annealed at about 450 C in O2 for 30 min after Au deposition.

Foote, M. C.↗
NASA NTRS1993

High Temperature Superconductor Josephson Weak Links

High T_c edge-geometry SNS microbridges have been fabricated using ion-damaged YBa_2Cu_3O_(7-x) (YBCO) and a nonsuperconducting phase of YBCO (N-YBCO) as normal metals. Optimization of the ion milling process used for YBCO edge formation and cleaning has resulted in ion-damage barrier devices which exhibit I-V characteristics consistent with the Resistively-Shunted-Junction (RSJ) model, with typical current densities (J_c) of approximately 5 x 10^6 A/cm^2 at 4.2 K. Characterization of N-YBCO films suggests that N-YBCO is the orthorhombic YBCO phase with oxygen disorder suppressing T_c...

Hunt, B. D.↗
NASA NTRS1991

High-temperature superconducting superconductor/normal metal/superconducting devices

We describe the fabrication and characterization of superconductor/normal metal/superconductor (SNS) devices made with the high-temperature superconductor (HTS) YBa2Cu3O(7-x). Structures of YBa2Cu3O(7-x)/Au/Nb on c-axis-oriented YBa2Cu3O(7-x) were made in both sandwich and edge geometries in order to sample the HTS material both along and perpendicular to the conducting a-b planes. These devices display fairly ideal Josephson properties at 4.2 K. In addition, devices consisting of YBa2Cu3O(7-x)/YBa2Cu3O(y)/YBa2Cu3O(7-x), with a 'normal metal' layer of reduced transition temperature YBa2Cu3O(7-x) were fabricated and show a great deal of promise for applications near 77 K. Current-voltage characteristics like those of the Resistively-Shunted Junction model are observed, with strong response to 10 GHz radiation above 60 K.

Foote, M. C.↗
NASA NTRS1972

Proximity effect between superconductivity and normal metals

The SNS junctions were limited to having gold (n) layers of less than 3000 A in order to avoid having the tin (S) films become normal under the influence of the signal current in the gold. The gold layer was alloyed with 10 wt% copper to shorten its electronic mean free path, increasing the tin layer critical current while decreasing the Josephson critical current. It was also found that a previously reported anomalous voltage shift in the presence of I2 is caused by the tin being driven normal. After deposition, the samples were transferred to a conventional cryostat to provide better thermal contact to the films. This reduction of heating in the films produced more linear I-V characteristics and a change in the constant voltage current gain. In order to achieve power gain the SNS device must be operated at lower temperatures were the effects of fluctuations are less and be constructed such that the input resistance is much reduced and the dynamic output resistance increased. A geometry is proposed using a more sophisticated evaporator.

Meissner, H.↗
NASA NTRS1991

YBa2Cu3O(7-x)/Au/Nb device structures

Fabrication and testing of planar and edge geometry YBaCuO/Au/Nb superconductor/normal-metal/superconductor (SNS) device structures is described. Weak-link devices of this type serve as sensitive probes of the electrical quality of the YBaCuO/Au interface. The devices are fabricated using laser-ablated, in situ, c-axis-oriented YBaCuO thin films, with both annealed and unannealed YBaCuO/Au interfaces. The planar SNS structures are formed by sequential, in situ deposition of YBaCuO, Au, and Nb, followed by etching, planarization, and wiring electrode definition to produce junctions ranging from 5 to 20 micron on a side. Resulting RnA products are 1-10 x 10 to the -8th ohm-sq cm with critical current densities up to 5 kA/sq cm. For the edge geometry devices, the YBaCuO film edges are patterned using Ar ion milling, followed by a low energy ion cleaning step and in situ deposition of Au and Nb. Devices with areas in the 10 to the -7th to 10 to the -8th sq cm range have been fabricated with RnA products lower than 10 to the -8th ohm-sq cm and critical current densities up to 3kA/sq cm. Both types of devices show ac Josephson steps under microwave irradiation. The best results have been obtained with annealed YBaCuO/Au interfaces.

Hunt, B. D.↗