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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Modulating charge transport via 2 MeV He + irradiation in VO 2

Vanadium dioxide (VO 2 ) is of interest for adaptive electronic applications such as neuromorphic neuristor devices and variable emissivity or tunable thermal control materials, thanks to its key property—a metal–insulator transition (MIT) at 68 °C that is accompanied by a dramatic change in electrical and optical properties. To improve performance in these roles, it is critical to develop approaches to engineer transport properties and the MIT behavior. While many documented techniques exist to modulate the MIT and film resistivities via lattice strain and chemical doping, less is known about the effects of ion irradiation on the intrinsic properties of VO 2 , despite the ability to control the spatial distribution of irradiation beams and the prevalence of high energy ion implantation in the semiconductor industry. The impact of irradiation of different acceleration energies on the responses of VO 2 is of specific interest, as charged particle energy generally impacts both the resulting defect profile and corresponding transport behavior. Here, we demonstrate that 2 MeV He ions at equivalent calculated displacements per atom, in two different types of films, can create remarkable changes to the nature of charge transport in VO 2 , especially in the low-temperature insulating phase. Simulation of resulting changes in electrical conductivity reveals that He ion irradiation offers a strategy to increase both oscillation frequency and the signal transmission. These results provide insights into the intentional design of defect populations to modulate transport for neuromorphic VO 2 devices.

Gurrola, Rebeca M. [Texas A & M Univ., College Sta↗
DOE OSTI2025

Imaging Power Losses in CdSeTe Solar Cells

Much of the research on CdSeTe photovoltaics is focused on improving the open-circuit voltage (V oc ) of the solar cell. But solar cells operate at the maximum power point (MPP) rather than at V oc . The recombination processes at MPP may be different than those at V oc , and increasing the power output at MPP is the key to advancing efficiency. Here, we introduce a camera-based PL imaging system that enables power loss analysis under operating conditions and across cm-sized areas covering multiple cells. The instrument is demonstrated with CdSeTe devices having efficiencies greater than 19%. An implied current density versus implied voltage (iJV) curve can be produced at each pixel with <20 µm resolution. We find that regions with high implied open circuit voltage are often those with low implied fill factor, showing that voltage loss analysis at open circuit is not sufficient to understand power losses under operating conditions. Measurement of JV curves as a function of irradiance can also be performed in the system, which allows series resistance-free pseudo JV (pJV) curves to be produced. Comparison of pJV to measured JV and iJV curves allows further analysis of the operational losses, pointing the way to higher efficiency.

14 SOLAR ENERGY↗
DOE OSTI2023

Evaluation of printability methodologies and feasibility to down select LBPF steel and other materials for nuclear applications

In this work, new research is underway to produce alloys beyond well-known alloys with modified compositions that are better suited to be produced with additive manufacturing. These alloys can only possess improved radiation tolerance but also improved high temperature strength, creep resistance while also using elements that reduce the amount of activation after irradiation. This work package supports the vision and goals of the Advanced Materials and Manufacturing Technology (AMMT) program relevant to accelerate the development and deployment of advanced manufacturing processes. This work focuses on evaluating the methodology for designing alloys best suited for AM processes based on “printability”, literature research to evaluate and down select steel alloy systems. In this work, microstructural characterization and testing activities have been performed on certain steel alloys to support the efforts from collaborating laboratories during the evaluation and printing of the test articles. The final recommendation will be performed by all four participating laboratories.

316L↗
NASA NTRS1966

Radiation used to temperature compensate semiconductor strain gages

Exposure to high energy electron radiation reduces the temperature coefficients of resistance and gage factor of a range of resistivities of n- and p-type semiconductor silicon strain gages. After irradiation, the gages are heated to a high temperature for a 24-hour period to stabilize their temperature coefficients.

Gross, C.↗
NASA NTRS1973

Performance of epitaxial back surface field cells

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 Omega-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 Omega-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1 MeV electrons to a fluence of 5 X 10 to the 15th power e/cm2. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short circuit currents were within 2% of the prediction. Calculations are presented of optimum cell performance as functions of epitaxial layer thickness, radiation fluence and substrate diffusion length.

Brandhorst, H. W., Jr.↗
NASA NTRS1974

Performance of epitaxial back surface field cells

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 ohm-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 ohm-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1-MeV electrons to a fluence of 5 times 10 to the 15th electrons per sq cm. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short-circuit currents were within 2% of the prediction. Calculations are presented for optimum cell performance as functions of epitaxial layer thickness, radiation fluence, and substrate diffusion length.

Brandhorst, H. W., Jr.↗
NASA NTRS1985

Potential for use of indium phosphide solar cells in the space radiation environment

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Weinberg, I.↗
NASA NTRS1985

Potential for use of InP solar cells in the space radiation environment

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Weinberg, I.↗
NASA NTRS1989

Standard Method For Radiation Tests Of Liquids

Simple procedure provides standard method for radiation tests of liquids. Assures identical handling and dosage so data from different test laboratories compared reliably. Pair of glass vials, joined by frangible neck and equipped with valves, used. Third vial also used. Filled with control specimen and not irradiated. Developed for measuring properties of liquids for use in radiation-resistant liquid-dielectric capacitors, procedure used for any of variety of liquids proposed for use in high-radiation environment - in x-ray and particle-accelerating machines and nuclear reactors, for example.

Bouquet, Frank L.↗
DOE OSTI2021

Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes

We investigate the impact of high-dose gamma-ray irradiation on the electrical performance of Ga-polar and N-polar GaN-based p-n diodes grown by metalorganic chemical vapor deposition. We compare the current density-voltage (J-V), capacitance-voltage (C-V), and circular transfer length method (CTLM) characteristics of the p-n diodes fabricated on Ga-polar and N-polar orientations before and after irradiation. The relative turn-on voltage increases for the Ga-polar diodes with increasing irradiation dose, while it increases initially and then starts to decrease for the N-polar diodes. The p-contact total resistance increases for Ga-polar and decreases for N-polar samples, which we attribute to the formation of point defects and additional Mg activation after irradiation. The J-V characteristics of most of the tested diodes recovered over time, suggesting the changes in the J-V characteristics are temporary and potentially due to metastable occupancy of traps after irradiation. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements reveal the existence of different types of initial defects and surface electronic states on Ga-polar and N-polar samples. Gallium vacancies (V Ga ) are dominant defects in Ga-polar samples, while nitrogen vacancies (V N ) are dominant in N-polar samples. The presence of a higher concentration of surface states on Ga-polar surfaces compared to N-polar was confirmed by calculating the band bending and the corresponding screening effect due to opposite polarization bound charge and ionized acceptors at the surface. The difference in surface stoichiometry in these two orientations is responsible for the different behavior in electrical characteristics after gamma-ray interactions.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Strength and rupture geometry of un-irradiated C26M FeCrAl under LOCA burst testing conditions

Ferritic iron-chromium-aluminum (FeCrAl) alloys are an accident tolerant fuel candidate to replace the incumbent Zr-based claddings. Nuclear grade FeCrAl alloys are marked by superior high temperature mechanical behavior and exceptional steam oxidation resistance, both of which increase safety margins during accident scenarios. In the present study, the loss of coolant accident (LOCA) burst behaviors of three un-irradiated commercially fabricated cladding materials in a simulated LOCA environment were compared: (1) T35Y2, a 1 st generation nuclear grade FeCrAl, (2) C26M, a 2 nd generation nuclear grade FeCrAl, and (3) Zircaloy-2. Both FeCrAl alloys showed improved mechanical strength and steam oxidation resistance compared to Zircaloy-2. C26M claddings burst at significantly higher temperatures for all tested engineering hoop stresses, had limited ballooning, and demonstrated preferential fuel retention behavior in terms of burst opening area and length. High temperature tensile data for C26M is also presented. For both un-irradiated FeCrAl alloys, it was found that a distinct “threshold” burst stress signified the transition between small and large openings. Finally, higher threshold hoop stresses were associated with higher uniaxial strength for the FeCrAl alloys, indicating that tensile data, rather than creep data, could be useful for predicting rupture size and assessing fuel dispersal concerns.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Microstructural evolution in doped high entropy alloys NiCoFeCr-3X (X=Pd/Al/Cu) under irradiation

Commonly studied equatomic single-phase FCC high entropy alloys based on 3d transition metals like NiCoFeCr do not provide adequate strength and radiation resistance at high doses for nuclear structural applications. In the current study, the major alloying effects like lattice distortion, ordering and clustering tendencies were investigated by adding low concentration of Pd, Al, or Cu respectively to study the doping effects on the ion irradiation response of NiCoFeCr alloy. The alloys were irradiated with 3 MeV Ni 2+ ions at 500 °C to a fluence of 1 × 10 17 /cm 2 at a beam flux of approximately 2.8 × 10 12 ions/cm 2 /s. The microstructural evolution upon irradiation i.e., formation of dislocation networks, radiation induced segregation and precipitation, and void formation were studied in detail. Further, post-irradiation characterization results showed that a Pd addition leads to a high void nucleation rate but controlled void growth, which may be attributed to increased lattice distortion. In Al added HEA, our microstructural analysis indicates that radiation induced ordered L1 2 precipitates do not affect void swelling significantly. Cu addition led to Cu precipitation that drastically suppressed dislocation density and void swelling of the alloy. Additionally, a model was developed to qualitatively describe the trend in void swelling of typical FCC alloys under ion irradiation. This model was able to qualitatively explain the suppression and reappearance of void swelling in ion irradiated alloys that generally occurs near the region with peak implanted ion concentration.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb –1 means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 · 10 15 1 MeV n eq /cm 2 and 0.66 MGy, respectively, including a safety factor of 1.5. Radiation hard n + -in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n + implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. Finally, we discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1971

Circadian periodicity of resistance to ionizing radiation in the pocket mouse.

Investigation of the response of pocket mice to Co 60 irradiation delivered at two times of day - namely, the predicted high and low points of the metabolic rate. The validity of torpor as an assay of the circadian period of body temperature in pocket mice and as a basis for selecting irradiation times is examined. A study is made of the mitotic activity in the pocket mouse intestinal epithelium as an example of a physiological rhythm which might influence radiation sensitivity. The results of tests in which pocket mice were exposed to ionizing radiation at two different times of day are cited. It is found that under the investigated conditions pocket mice irradiated during their metabolically active period (2330 hr) live significantly longer than those irradiated while their metabolic rate is low (0900 hr).

Lindberg, R. G.↗
DOE OSTI2024

Laser micro-machining and damage testing of rounded shadow cone blockers on silica glass for arresting laser damage growth by redirection of light

Structured conical blockers manufactured on optical input surfaces are being used to shadow, and thereby, arrest growth of exit surface damage on large optics for applications in high-energy laser systems to extend their lifetime usage. However, as the size of the Shadow Cone Blocker (SCB) is increased, the deflected light must be carefully managed to prevent consequential damage from downstream intensification. Here, we design and fabricate a distinct input SCB geometry to alleviate this problem, enabling larger damage site mitigation. The demonstrated ~1 mm diameter SCB was manufactured with a convergent approach using a CO 2 pulsed laser ablative scanning sequence on a fused silica window. The SCB design was refined to maximize resistance to both input and exit surface damage initiations on 1 cm thick fused silica windows when exposed to 351 nm irradiation and validated with laser damage testing. The design showed to prevent damage onset to the exit surface for incident fluences on the SCB of 10.7 ± 1.3 J·cm -2 and is resistant to damage on the input surface exceeding 30 J·cm -2 input fluence.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Improved Understanding of Zircaloy Hydrogen Pickup Mechanisms in BWRs. NSUF Report (Final Report)

Using an instrumented autoclave operating at 288°C and 1100 psi, electrical impedance spectroscopy (EIS) measurements were taken from three neutron irradiated fuel channel samples (Zircaloy-2 and Zircaloy-4). The three high priority fuel channel samples were tested at 288°C using a simulated PWR water with the AC frequency range extending down through 10 -4 Hz, with corresponding DC measurements to validate the resistance measurements. EIS measurements were also taken at room temperature using a simulated PWR water from four neutron irradiated fuel channel samples (Zircaloy-2 and Zircaloy-4). and four water rod samples (Zircaloy-2). EIS measurements were also performed on unirradiated Zircaloy-2 tubes that were previously oxidized in autoclaves at various temperatures for different time durations to obtain oxide layers of different thicknesses. These experiments proved to be more challenging than anticipated because of the small size of the samples, which required development of fixtures to allow valid testing of the materials, some of which are radioactive, under pressure and temperature. Equivalent circuits were used to model the data. Some samples resulted in Nyquist plots where the arcs were too close to each other resulting in the inability to separate the different oxide morphological thicknesses. Microstructural characterization in the form of optical microscopy, scanning electron microscopy and (scanning) transmission electron microscopy was performed to document the microstructural features of the oxidized Zr-2 and Zr-4 samples (oxide and metal/oxide interface) and to interpret the EIS results. At the start of this work, it was assumed that despite the laminar cracks and porosity visible in both optical and SEM, the oxide scale is dense near the metal, effectively preventing the water from contacting the metal directly. While it is generally accepted that the large laminar cracks pores allow the water to percolate into the oxide film, it is unknown just how deep it can go, and how interconnected is the porosity, which will dictate how much the porosity is connected electrically to the water within the oxide scale. The EIS results demonstrated that there is in fact a distribution of oxide thicknesses over the various samples, and within each material condition, that are communicating to the liquid. This is derived from the fact that Nyquist plots have an arc radius whose center point is often below the Z’ axis, implying that instead of a single oxide thickness, these oxides have a distribution of thicknesses. This distribution of thicknesses produces arcs that are not clearly separable in most of the samples.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2021

Helium-bubble-enhanced disordering of intermetallic phase under irradiation

Understanding and controlling phase transformations in metals and alloys under irradiation is vital to the design of irradiation-tolerant materials. The L1 2 -ordered intermetallic phase in nickel-based superalloys provides superior high-temperature mechanical properties and corrosion resistance. Here, we studied the order-disorder transformation kinetics of an L1 2 -structured gamma-prime phase in nickel-based superalloy Rene N4 under krypton ion irradiation and the effect of pre-implanted helium gas bubbles on the kinetics of phase transformation. Furthermore, the presence of pre-implanted helium gas bubbles significantly enhances the order-disorder transformation of L1 2 -structured gamma-prime phase under irradiation at 300 °C. The evolution of pre-implanted helium gas bubbles under irradiation implies that helium gas bubbles could effectively trap irradiation-induced vacancies and impede the reordering process of anti-site defects in gamma-prime phase.

36 MATERIALS SCIENCE↗