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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Magnetic electrical connectors for biomedical percutaneous implants

A biomedical percutaneous connector is described which includes a socket having an enlarged disk shaped base portion for being implanted below the patient's skin and cylindrical portion which is integral with the base portion and extends outwardly of the skin. A conical recess in an upper end of the cylindrical portion has a magnet located in the base. Inclined conductive strips are carried on an upper end of the cylindrical portion to which electrical conductors are attached and extend into the patient's body. A complementary shaped plug which also has electrical contacts provided thereon is adapted to fit within the conical recess of the socket. The plug is held in the socket by magnetic force.

Owens, L. J.↗
NASA NTRS1976

Photoluminescence of ion-implanted GaN

Thirty-five elements were implanted in GaN. Their photoluminescence spectra were measured and compared to those of an unimplanted control sample. Most impurities emit a peak at about 2.15 eV. Mg, Zn, Cd, Ca, As, Hg, and Ag have more characteristic emissions. Zn provides the most efficient recombination center. A set of midgap states is generated during the damage-annealing treatment.

Pankove, J. I.↗
NASA NTRS1977

Does application of the Rosiwal Principle to lunar soils require that concentrations of solar-wind-implanted species be grain-size independent

A reconsideration of the application of the Rosiwal Principle to lunar soils indicates a flaw in arguments put forth previously by Criswell (1975). Specifically, by introducing a boundary condition which must exist at the lunar surface, it is shown that concentrations of solar-wind-implanted species showing a dependence on grain size may be able to develop in soils at concentration levels below those required for saturation of grain surfaces. As a result, observed grain-size-dependent concentrations of solar-wind species in lunar soils do not necessarily require the exposure time scales or solar-wind fluxes deduced from the arguments of Criswell.

Becker, R. H.↗
NASA NTRS1979

Biocompatibility of surgical implants

Method of selecting biocompatible materials for surgical implants uses fracture mechanic relationships and surface energies of candidate materials in presence of blood plasma. Technique has been used to characterize 190 materials by parameters that reflect their biocompatibility.

Kaelble, D. H.↗
NASA NTRS1979

All-ion-implantation process for integrated circuits

Simpler than diffusion fabrication, ion bombardment produces complementary-metal-oxide-semiconductor / silicon-on-sapphire (CMOS/SOS) circuits that are one-third faster. Ion implantation simplifies the integrated circuit fabrication procedure and produces circuits with uniform characteristics.

Woo, D. S.↗
NASA NTRS1977

Mechanical properties of ion-beam-textured surgical implant alloys

An electron-bombardment Hg ion thruster was used as an ion source to texture surfaces of materials used to make orthopedic and/or dental prostheses or implants. The materials textured include 316 stainless steel, titanium-6% aluminum, 4% vanadium, and cobalt-20% chromium, 15% tungsten. To determine the effect of ion texturing on the ultimate strength and yield strength, stainless steel and Co-Cr-W alloy samples were tensile tested to failure. Three types of samples of both materials were tested. One type was ion-textured (the process also heats each sample to 300 C), another type was simply heated to 300 C in an oven, and the third type was untreated. Stress-strain diagrams, 0.2% offset yield strength data, total elongation data, and area reduction data are presented. Fatigue specimens of ion textured and untextured 316 stainless steel and Ti-6% Al-4% V were tested. Included as an ion textured sample is a Ti-6% Al-4% V sample which was ion machined by means of Ni screen mask so as to produce an array of 140 mu m x 140 mu m x 60 mu m deep pits. Scanning electron microscopy was used to characterize the ion textured surfaces.

Weigand, A. J.↗
NASA NTRS1978

The use of an ion-beam source to alter the surface morphology of biological implant materials

An electron bombardment, ion thruster was used as a neutralized-ion beam sputtering source to texture the surfaces of biological implant materials. Scanning electron microscopy was used to determine surface morphology changes of all materials after ion-texturing. Electron spectroscopy for chemical analysis was used to determine the effects of ion texturing on the surface chemical composition of some polymers. Liquid contact angle data were obtained for ion textured and untextured polymer samples. Results of tensile and fatigue tests of ion-textured metal alloys are presented. Preliminary data of tissue response to ion textured surfaces of some metals, polytetrafluoroethylene, alumina, and segmented polyurethane were obtained.

Weigand, A. J.↗
NASA NTRS1976

Silicon solar cells by ion implantation and pulsed energy processing

A new method for fabrication of silicon solar cells is being developed around ion implantation in conjunction with pulsed electron beam techniques to replace conventional furnace processing. Solar cells can be fabricated totally in a vacuum environment at room temperature. Cells with 10% AM0 efficiency have been demonstrated. High efficiency cells and effective automated processing capabilities are anticipated.

Kirkpatrick, A. R.↗
NASA NTRS1978

The use of an ion-beam source to alter the surface morphology of biological implant materials

An electron-bombardment ion-thruster was used as a neutralized-ion-beam sputtering source to texture the surfaces of biological implant materials. The materials investigated included 316 stainless steel; titanium-6% aluminum, 4% vanadium; cobalt-20% chromium, 15% tungsten; cobalt-35% nickel, 20% chromium, 10% molybdenum; polytetrafluoroethylene; polyoxymethylene; silicone and polyurethane copolymer; 32%-carbon-impregnated polyolefin; segmented polyurethane; silicone rubber; and alumina. Scanning electron microscopy was used to determine surface morphology changes of all materials after ion-texturing. Electron spectroscopy for chemical analysis was used to determine the effects of ion-texturing on the surface chemical composition of some polymers. Liquid contact angle data were obtained for ion-textured and untextured polymer samples. Results of tensile and fatigue tests of ion-textured metal alloys are presented. Preliminary data of tissue response to ion-textured surfaces of some metals, polytetrafluoroethylene, alumina, and segmented polyurethane have been obtained.

Weigand, A. J.↗
NASA NTRS1977

A subcutaneous channeling probe for implanting long leads

The channeling probe described in the present paper was designed to overcome surgical problems of the type that were encountered when a multichannel radio transmitter had to be implanted in a cow. The probe was made of a flexible but sufficiently stiff 9.5-mm-diam nylon rod, consisting of 46-cm sections for convenience in sterilization and surgical handling. Stainless steel sleaves reinforced the threaded connecting joints. At one end, arrowhead-shaped channeling heads could be attached to produce wide channels for large sensors. The other end was tapered for narrow channels. Postoperative problems were not encountered in the use of this probe in cows, sheep, and dogs.

Lund, G. F.↗
NASA NTRS1978

Miniature implantable ultrasonic echosonometer

A miniature echosonometer adapted for implantation in the interior of an animal for imaging the internal structure of a organ, tissue or vessel is presented. The echosonometer includes a receiver/transmitter circuit which is coupled to an ultrasonic transducer. Power is coupled to the echosonometer by electromagnetic induction through the animal's skin. Imaging signals from the echosonometer are electromagnetically transmitted through the animal's skin to an external readout apparatus.

Kojima, G. K.↗
NASA NTRS1979

Pulsed-electron-beam annealing of ion-implantation damage

Short-duration high-intensity pulsed electron beams have been used to anneal ion-implantation damage in silicon and to electrically activate the dopant species. Lattice regrowth and dopant activation were determined using He(+)-4 backscattering, SEM, TEM, and device performance characteristics as diagnostic techniques. The annealing mechanism is believed to be liquid-phase epitaxial regrowth initiating from the substrate. The high-temperature transient pulse produced by the electron beam causes the dopant to diffuse rapidly in the region where the liquid state is achieved.

Greenwald, A. C.↗
NASA NTRS1980

Automated ion implantation for IC's

Report discusses automated ion-implantation facility under development at Marshall Space Flight Center. Facility will produce ultra-reliable IC's with minimal human intervention.

Kennedy, B. W.↗
NASA NTRS1979

Characterization and growth of epitaxial layers of Gs exhibiting high resistivity for ionic implantation

Either classical or low temperature epitaxial growth techniques can be used to control the deposition of buffer layers of GaAs on semiconducting substrates and to obtain the resistivity and purity desired. Techniques developed to study, as a function of thickness, the evolution of mobilities by photoHall, and the spectroscopy of shallow and deep centers by cathodoluminescence and current transients reveal one very pure layer of medium resistivity and high mobility, and another "dead layer" of elevated resistivity far from the surface. The highly resistive layer remains pure over several microns, which appears interesting for implantation.

Source record↗
NASA NTRS1981

Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation

A method of making V-MOS field effect transistors is disclosed wherein a masking layer is first formed over a surface of a crystalline substrate. An aperture is then formed in the masking layer to expose the surface of the substrate. An anisotropic etchant is applied to the exposed surface so that a groove having a decreasing width within increasing depth is formed. However, the etch is not allowed to go to completion with the result that a partially formed V-shaped groove is formed. Ions are accelerated through the aperture for implantation in the crystalline substrate in the lower portion of the partially formed V-shaped groove. Thereafter, an anisotropic etchant is reapplied to the partially formed V-shaped groove, and the etch is allowed to go to completion.

Jhabvala, M. D.↗
NASA NTRS1981

Laser annealing of ion implanted CZ silicon for solar cell junction formation

The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for function formation of solar cells are evaluated. The feasibility and requirements are also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of one wafer/second. Results show that laser annealing yields active, defect-free, shallow junction devices. Functional cells with AM 1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained. For larger cells, 7.62 cm dia., conversion efficiencies ranged up to 14.5%. Experiments showed that texture etched surfaces are not compatible with pulsed laser annealing due to the surface melting caused by the laser energy. When compared with furnace annealed cells, the laser annealed cells generally exhibited conversion efficiencies which were equal to or better than those furnace annealed. In addition, laser annealing has greater throughput potential.

Katzeff, J. S.↗
NASA NTRS1981

Evidence for sulphur implantation in Europa's UV absorption band

The UV spectral characteristics of the Galilean satellites are investigated (using data from the International Ultraviolet Explorer (IUE) spacecraft) as a function of the orbital position, large-scale areal variability, and temporal dynamics. The discovery of an absorption feature at 280 nm in Europa's reflection spectrum is reported and observations show that the absorption is strongest on the trailing hemisphere (central longitude 270 degrees). The feature resembles SO2 and seems to result from S-O bond formation between deeply implanted sulphur atoms and the adjacent damaged water-ice-lattice. The sulphur supposedly comes from energetic (hundreds of keV) sulphur ions that are present in the Jovian magnetosphere. An appropriate equilibrium condition can be found to match the observed spectral data if sputtering erosion occurs at no greater than approximately 20 meters per one billion years.

Lane, A. L.↗