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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Probing Phase Transformations and Microstructural Evolutions at the Small Scales: Synchrotron X-ray Microdiffraction for Advanced Applications in [Phase 3 Memory,] 3D IC (Integrated Circuits) and Solar PV (Photovoltaic) Devices

Synchrotron x-ray microdiffraction (μXRD) allows characterization of a crystalline material in small, localized volumes. Phase composition, crystal orientation and strain can all be probed in few-second time scales. Crystalline changes over a large areas can be also probed in a reasonable amount of time with submicron spatial resolution. However, despite all the listed capabilities, μXRD is mostly used to study pure materials but its application in actual device characterization is rather limited. This article will explore the recent developments of the μXRD technique illustrated with its advanced applications in microelectronic devices and solar photovoltaic systems. Application of μXRD in microelectronics will be illustrated by studying stress and microstructure evolution in Cu TSV (through silicon via) during and after annealing. Here, the approach allowing study of the microstructural evolution in the solder joint of crystalline Si solar cells due to thermal cycling will be also demonstrated.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Physics-based simulation of EM and SM in TSV-based 3D IC structures

Evolution of stresses in through-silicon-vias (TSVs) and in the TSV landing pad due to the stress migration (SM) and electromigration (EM) phenomena are considered. It is shown that an initial stress distribution existing in a TSV depends on its architecture and copper fill technology. We demonstrate that in the case of proper copper annealing the SM-induced redistribution of atoms results in uniform distributions of the hydrostatic stress and concentration of vacancies along each segment. In this case, applied EM stressing generates atom migration that is characterized by kinetics depending on the preexisting equilibrium concentration of vacancies. Stress-induced voiding in TSV is considered. EM induced voiding in TSV landing pad is analyzed in details.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Heating performances of a IC in-blanket ring array

An important limiting factor to the use of ICRF as candidate heating method in a commercial reactor is due to the evanescence of the fast wave in vacuum and in most of the SOL layer, imposing proximity of the launching structure to the plasma boundary and causing, at the highest power level, high RF standing and DC rectified voltages at the plasma periphery, with frequent voltage breakdowns and enhanced local wall loading. In a previous work [1] the concept for an Ion Cyclotron Heating & Current Drive array (and using a different wave guide technology, a Lower Hybrid array) based on the use of periodic ring structure, integrated in the reactor blanket first wall and operating at high input power and low power density, was introduced. Based on the above concept, the heating performance of such array operating on a commercial fusion reactor is estimated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Demonstration and analysis of a 600 V, 10 A, 4H-SiC lateral single RESURF MOSFET for power ICs applications

This paper reports the demonstration of a 600 V 4H-SiC lateral MOSFET with a large current handling capability (10 A). To achieve a high breakdown voltage in a lateral architecture, a REduced SURface Field (RESURF) structure was implemented to alleviate surface electric field crowding. A single RESURF (P-top) design on an N-drift on a 6-in. N+ substrate demonstrated a voltage supporting capability of 120 V/ μ m, resulting in a breakdown voltage of 600 V. The total width of 198 mm for the interdigitated gate fingers was designed to accomplish the high current capability. It turned out that, for relatively low voltage SiC lateral MOSFETs (<600 V), more focus needs to be placed on achieving a low channel, contact, metal, and JFET region resistance than a low drift layer resistance to further improve the on-resistance. Device design, fabrication, and electrical characterization of the proposed 600 V, 10 A, 4H-SiC lateral single RESURF MOSFETs are discussed in this paper.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

TRIGGERED STAR FORMATION IN A BRIGHT-RIMMED CLOUD (BRC 5) OF IC 1805

We report recent optical, near-infrared (NIR), and millimeter observations which have revealed some new features of the bright-rimmed cloud BRC 5 associated with W4. With slitless spectroscopy, we detected 17 H{alpha} emission stars around the cloud; 4 are near the surface of the cloud, and 1 is toward IRAS 02252+6120. NIR photometry shows that the central H{alpha} emission star, together with one bright infrared source, has large NIR excesses and Class I spectral energy distributions. These two Class I objects are associated with the 2.9 mm continuum peaks and with a bipolar outflow, and are in between two separate, elongated C{sup 18}O(J = 1-0) cores. The C{sup 18}O cores and the two Class I sources are aligned along a line at position angle {approx}240 Degree-Sign , somewhat less than perpendicular to the direction of UV radiation from the OB stars. Most of the detected H{alpha} emission stars, all T Tauri candidates, are located within {approx}3' of the cloud on the exciting star side. An estimate of the age of the stars based on a color-magnitude diagram suggests that these T Tauri candidates have ages of {approx}1 Myr or less, but are more evolved objects than the central young stellar objects. This age sequence suggests sequential star formation within the BRC 5 cloud. The {sup 13}CO(J = 1-0) emission shows three elongated structures, which indicates the asymmetric structure toward the UV incident axis. We present our exploratory simulation results by using a smoothed particle hydrodynamic code that suggests that the asymmetrical BRC 5 structure could possibly result from the evolution of a preexisting prolate molecular cloud subject to radiation-driven implosion (RDI). Our best-fit prolate cloud has an initial mass of {approx}400 M{sub Sun }, an axial ratio of {approx}1.7, and a semi-major axis of {approx}1.6 pc, pointing away from the ionization flux by an angle of 15 Degree-Sign . The simulated cloud structure not only closely matches the observed asymmetric morphological structure of BRC 5, but also reveals the possibility of the development of two major cores at the head of BRC 5. For the first time, the possibility of forming two stars by an RDI mechanism in a BRC is investigated.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2014

3D IC for Future HEP Detectors

Three dimensional integrated circuit technologies offer the possibility of fabricating large area arrays of sensors integrated with complex electronics with minimal dead area, which makes them ideally suited for applications at the LHC upgraded detectors and other future detectors. Here we describe ongoing R&D efforts to demonstrate functionality of components of such detectors. This also includes the study of integrated 3D electronics with active edge sensors to produce "active tiles" which can be tested and assembled into arrays of arbitrary size with high yield.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2014

IC W13_auptphase Highlight: Phase Diagram of Pt from Z Methodology

Pt phase diagram from combining the Z methodology with the fcc-rhcp (face-centered cubic -- random hexagonal closepacked) solid-solid phase boundary. The experimental melting curve of Pt is shown as dashed blue line. Solid-solid phase boundaries in Figs. 1 and 2 are consistent with each other. Phase diagram of Pt from the Z methodology: fcc-Pf melting curve (green line), liquid Pt solidified into solid fcc (green bullets), 9R-Pt melting curve (blue line), liquid Pt solidified into solid 9R (blue bullets), and the (tentative) fcc-9R solid-solid phase boundary (violet).

36 MATERIALS SCIENCE↗
DOE OSTI2014

IC W13_fephases Highlight:Solid-Solid Phase Boundary in Fe

Temperature of the fcc-bcc (face-centered cubic – body-centered cubic) solid-solid phase transition in Fe calculated as Teq = Tinst ΔEfcc-bcc/ΔEbcc-m. (where m. stands for martensitic mixture that bcc-Fe converts into at Tinst) maps out a curve which is consistent with the line of the fast recrystallization threshold observed in the recent experiments on Fe at ESRF.

36 MATERIALS SCIENCE↗