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At least 343 records · Page 19

Impact of high-temperature annealing on hafnia-silica composite coatings deposited via ion beam sputtering for high-peak power 1064 nm lasers

The maximum power handling fluence of high-peak and average power laser systems is often limited by the laser damage of the coatings on optical components. Furthermore, these multilayer dielectric coatings are limited in their maximum power handling due to laser-damage-prone defects in the lower optical bandgap, higher optical index material. Some of these defects can be mitigated by thermal annealing to high temperatures, which can greatly reduce the linear absorbative precursors. Typically, hafnia and silica are the materials of choice for high-peak and average power laser systems in the ultraviolet through infrared spectral range; however, hafnia crystalizes readily when annealed at high temperatures. In this study, we prepare composite HfO 2 -SiO 2 coatings by co-sputtering hafnia and silica in an ion beam sputtering system and compare them to pure hafnia-based coatings. We demonstrate that crystallinity in hafnia can be completely suppressed when it is mixed with silica, such as the composite coatings in this study. High reflectors were fabricated and annealed, demonstrating that the multilayer dielectric stacks can survive high-temperature annealing and exhibit an excellent linear absorption of 0.2 +/- 1 ppm at 1064 nm. Short- and long-pulse laser damage was explored, demonstrating the complex relationship between linear absorption and the non-linear absorption which drives pulsed laser damage. These results provide an excellent route to the creation of very low linear absorption optical coatings, which also utilize low scattering materials that are best suited for high-peak and average power applications.

Harthcock, Colin [Lawrence Livermore National Labo↗

Integrated photonic molecule Brillouin laser with a high-power sub-100-mHz fundamental linewidth

Photonic integrated lasers with an ultra-low fundamental linewidth and a high output power are important for precision atomic and quantum applications, high-capacity communications, and fiber sensing, yet wafer-scale solutions have remained elusive. Here we report an integrated stimulated Brillouin laser (SBL), based on a photonic molecule coupled resonator design, that achieves a sub-100-mHz fundamental linewidth with greater than 10-mW output power in the C band, fabricated on a 200-mm silicon nitride (Si 3 N 4 ) CMOS-foundry compatible wafer-scale platform. The photonic molecule design is used to suppress the second-order Stokes (S2) emission, allowing the primary lasing mode to increase with the pump power without phase noise feedback from higher Stokes orders. The nested waveguide resonators have a 184 million intrinsic and 92 million loaded Q, over an order of magnitude improvement over prior photonic molecules, enabling precision resonance splitting of 198 MHz at the S2 frequency. We demonstrate S2-suppressed single-mode SBL with a minimum fundamental linewidth of 71±18 mHz, corresponding to a 23±6-mHz 2 /Hz white-frequency-noise floor, over an order of magnitude lower than prior integrated SBLs, with an ∼11-mW output power and 2.3-mW threshold power. The frequency noise reaches the resonator-intrinsic thermo-refractive noise from 2-kHz to 1-MHz offset. The laser phase noise reaches −155 dBc/Hz at 10-MHz offset. The performance of this chip-scale SBL shows promise not only to improve the reliability and reduce size and cost but also to enable new precision experiments that require the high-speed manipulation, control, and interrogation of atoms and qubits. Realization in the silicon nitride ultra-low loss platform is adaptable to a wide range of wavelengths from the visible to infrared and enables integration with other components for systems-on-chip solutions for a wide range of precision scientific and engineering applications including quantum sensing, gravitometers, atom interferometers, precision metrology, optical atomic clocks, and ultra-low noise microwave generation.

Liu, Kaikai (ORCID:0000000213609646)↗

New Submount Requirement of Conductively Cooled Laser Diodes for Lidar Applications

New submount technology is essential for the development of conductively cooled high power diode laser. The simulation and experimental results indicate that thermal conductivity of submount for high power laser-diode must be at least 600 W/m/k or higher for stable operation. We have simulated several theoretical thermal model based on new submount designs and characterized high power diode lasers to determine temperature effects on the performances of laser diodes. The characterization system measures the beam power, output beam profile, temperature distribution, and spectroscopic property of high power diode laser. The characterization system is composed of four main parts: an infrared imaging camera, a CCD camera, a monochromator, and a power meter. Thermal characteristics of two commercial-grade CW 20-W diode laser bars with open heat-sink type were determined with respect to the line shift of emission spectra and beam power stability. The center wavelength of laser emission has a tendency to shift toward longer wavelength as the driving current and heat sink temperature are increased. The increase of heat sink temperature decreases the output power of the laser bar too. Such results lay the guidelines for the design of new submount for high power laser-diodes.

Mo, S. Y.↗

High average power ultrafast laser technologies for driving future advanced accelerators

Large scale laser facilities are needed to advance the energy frontier in high energy physics and accelerator physics. Laser plasma accelerators are core to advanced accelerator concepts aimed at reaching TeV electron electron colliders. In these facilities, intense laser pulses drive plasmas and are used to accelerate electrons to high energies in remarkably short distances. A laser plasma accelerator could in principle reach high energies with an accelerating length that is 1000 times shorter than in conventional RF based accelerators. Notionally, laser driven particle beam energies could scale beyond state of the art conventional accelerators. LPAs have produced multi GeV electron beams in about 20 cm with relative energy spread of about 2 percent, supported by highly developed laser technology. This validates key elements of the US DOE strategy for such accelerators to enable future colliders but extending best results to date to a TeV collider will require lasers with higher average power. While the per pulse energies envisioned for laser driven colliders are achievable with current lasers, low laser repetition rates limit potential collider luminosity. Applications will require rates of kHz to tens of kHz at Joules of energy and high efficiency, and a collider would require about 100 such stages, a leap from current Hz class LPAs. This represents a challenging 1000 fold increase in laser repetition rates beyond current state of the art. Here, this whitepaper describes current research and outlook for candidate laser systems as well as the accompanying broadband and high damage threshold optics needed for driving future advanced accelerators.

47 OTHER INSTRUMENTATION↗

A high-pressure carbon dioxide gasdynamic laser

A carbon dioxide gasdynamic laser was operated over a range of reservoir pressure and temperature, test-gas mixture, and nozzle geometry. A significant result is the dominant influence of nozzle geometry on laser power at high pressure. High reservoir pressure can be effectively utilized to increase laser power if nozzle geometry is chosen to efficiently freeze the test gas. Maximum power density increased from 3.3 W/cu cm of optical cavity volume for an inefficient nozzle to 83.4 W/cu cm at 115 atm for a more efficient nozzle. Variation in the composition of the test gas also caused large changes in laser power output. Most notable is the influence of the catalyst (helium or water vapor) that was used to depopulate the lower vibrational state of the carbon dioxide. Water caused an extreme deterioration of laser power at high pressure (100 atm), whereas, at low pressure the laser for the two catalysts approached similar values. It appears that at high pressure the depopulation of the upper laser level of the carbon dioxide by the water predominates over the lower state depopulation, thus destroying the inversion.

Kuehn, D. M.↗

Demonstration of a side-pumped cross-seeded thin-slab pre-amplifier for high-power Ti:Sa laser systems

Here, we demonstrate a room-temperature Ti:Sapphire (Ti:Sa) amplifier that uses a cross pump-seed geometry (cross-thin-slab) to generate 30-mJ output pulses at 0.5-kHz repetition rate, and 25 mJ at 1 kHz when pumped by 100-mJ, 515-nm pulses from a diode-pumped Yb:YAG laser. The geometry allows to maintain a crystal temperature of ~30°C using cooling water at 10°C. The amplifier is an attractive solution for use in the first stages of amplification in high peak and high average power chirped pulse amplification laser systems.

47 OTHER INSTRUMENTATION↗

High-power 0.87-micron channel substrate planar lasers for spaceborne communications

High-power single-mode channeled-substrate planar AlGaAs diode lasers are being developed for reliable high-power operation for use as sources in spaceborne optical communication systems. The CSP laser structure has been optimized for operation at an emission wavelength of 870 nm. Such devices have exhibited output powers in excess of 80 mW CW at an operating temperature of 80 C.

Connolly, J. C.↗

High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of 8600 to 8800 A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are discussed. Lifetest data on these devices at high output power levels is also included. In addition, a new type of channeled substrate planar laser utilizing a Bragg grating to stabilize the longitudinal mode was demonstrated. The fabrication procedures and optoelectronic properties of this new diode laser are described.

Connolly, J. C.↗

Ultrafast time-resolved 2D imaging of laser-driven fast electron transport in solid density matter using an x-ray free electron laser

High-power, short-pulse laser-driven fast electrons can rapidly heat and ionize a high-density target before it hydrodynamically expands. The transport of such electrons within a solid target has been studied using two-dimensional (2D) imaging of electron-induced Kα radiation. However, it is currently limited to no or picosecond scale temporal resolutions. Here, we demonstrate femtosecond time-resolved 2D imaging of fast electron transport in a solid copper foil using the SACLA x-ray free electron laser (XFEL). An unfocused collimated x-ray beam produced transmission images with sub-micron and ~10 fs resolutions. The XFEL beam, tuned to its photon energy slightly above the Cu K-edge, enabled 2D imaging of transmission changes induced by electron isochoric heating. Time-resolved measurements obtained by varying the time delay between the x-ray probe and the optical laser show that the signature of the electron-heated region expands at ~25% of the speed of light in a picosecond duration. Time-integrated Cu Kα images support the electron energy and propagation distance observed with the transmission imaging. The x-ray near-edge transmission imaging with a tunable XFEL beam could be broadly applicable for imaging isochorically heated targets by laser-driven relativistic electrons, energetic protons, or an intense x-ray beam.

47 OTHER INSTRUMENTATION↗

Femtosecond damage experiments and modeling of broadband mid-infrared dielectric diffraction gratings

High peak and average power lasers with high wall-plug efficiency, like the Big Aperture Thulium (BAT) laser, have garnered tremendous attention in laser technology. To meet the requirements of the BAT laser, we have developed low-dispersion reflection multilayer dielectric (MLD) gratings suitable for compression of high-energy pulses for operations at 2 micron wavelength. We carried out 10000-on-1 damage tests to investigate the fluence damage thresholds of the designed MLD gratings and mirrors, which were found between 100-230 mJ/cm 2 . An ultrashort pulsed laser (FWHM = 53 fs, λ = 1.9 μ m) operating at 500 Hz was used in the serpentine raster scans. The atomic force microscope images of the damage sites show blister formation of the underlying layers at lower fluences but ablation of the grating pillars at higher fluences. We simulated the dynamic electronic excitation in the MLD optics with a finite-difference in the time domain approach in 2D. The simulation results agree well with the LIDT measurements and the observed blister formation. This model is able to evaluate the absolute LIDT of MLD gratings.

42 ENGINEERING↗

Improving the laser performance of ion beam sputtered dielectric thin films through the suppression of nanoscale defects by employing a xenon sputtering gas

Laser damage-prone precursors in high index materials such as hafnia are believed to be the primary limiter in the performance of dielectric multilayer films to advance ultra-high power and energy laser applications. Removing or suppressing these precursors is the key to fabricating laser damage resistant thin films for the enabling technologies. Early work has revealed that nanobubbles formed by entrapped argon (Ar) working gas in ion beam sputtering (IBS) produced hafnia films are primarily responsible for the onset of laser damage upon exposure to UV, ns-laser pulses. In this study, we demonstrate that the UV ns-laser damage onset of IBS produced hafnia films can be improved to 3.1 +/- 0.2 J/cm 2 by substituting the conventional Ar working gas with xenon (Xe), a nearly 1 J/cm 2 increase from that of the Ar produced hafnia films. In addition to the suppression of the overall point-defect density of the hafnia films, the reduction of the Xe entrapment eliminates the nanobubbles and the generation of plasmas that initiates the laser damage. The defect suppression and its correlation to the increase in laser damage threshold is revealed by the combined analysis of Rutherford backscattering spectroscopy, electron paramagnetic resonance spectroscopy, transmission electron microscopy, and laser damage testing. Monte Carlo simulations suggest a much smaller entrapment of Xe gas by comparison to Ar, which is attributed to the significant difference in the energy of the reflected neutrals (3X) which are likely to be implanted. These results provide an effective process route with a fundamental understanding for producing high laser damage resistant dielectric films for high power and high energy laser applications.

36 MATERIALS SCIENCE↗

Fatigue life of laser cut metals

Fatigue tests were conducted to determine the actual reduction in fatigue life due to weight removal for balancing by: hand grinding, low power (20 watt) Nd:glass laser, and high power (400 watt) Nd:YAG laser.

Martin, M. R.↗

Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

Amzajerdian, Farzin↗

High power metallic halide laser

A laser amplification system is disclosed whereby a metallic halide vapor such as copper chloride is caused to flow through a laser amplifier and a heat exchanger in a closed loop system so that the flow rate is altered to control the temperature rise across the length of the laser amplifier. The copper atoms within the laser amplifier should not exceed a temperature of 3000 K, so that the number of copper atoms in the metastable state will not be high enough to prevent amplification in the amplifier. A molecular dissociation apparatus is provided at the input to the laser amplifier for dissociating the copper chloride into copper atoms and ions and chlorine atoms and ions. The dissociation apparatus includes a hollow cathode tube and an annular ring spaced apart from the tube end. A voltage differential is applied between the annular ring and the hollow cathode tube so that as the copper chloride flows through, it is dissociated into copper and chlorine ions and atoms.

Pivirotto, T. J.↗

A cesium plasma TELEC device for conversion of laser radiation to electric power

Tests of the thermoelectronic laser energy converter (TELEC) concept are reported. This device has been devised as a means to convert high-average-power laser radiation into electrical energy, a crucial element in any space laser power transmission scheme using the available high-power/efficiency infrared lasers. Theoretical calculations, based upon inverse bremsstrahlung absorption in a cesium plasma, indicate internal conversion efficiency up to 50% with an overall system efficiency of 42%. The experiments reported were made with a test cell designed to confirm the theoretical model rather than demonstrate efficiency; 10.6-micron laser-beam absorption was limited to about 0.001 of the incident beam by the short absorption region. Nevertheless, confirmatory results were obtained, and the conversion of absorbed radiation to electric power is estimated to be near 10%.

Britt, E. J.↗

Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers

Lasers based on AlGaAs/InGaAs/GaAs heterostructures operating in the spectral range of 1.0 − 1.1 μm are investigated in order to optimise cladding layers. The effect of the thickness and composition of the cladding layers on the leakage of radiation from the laser waveguide is analysed. It is shown that for cladding thicknesses of 0.86 − 1.24 μm, it almost does not affect the output optical power. The effect of the crystal length and reflectivity of the laser mirrors on the leaky wave is demonstrated. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗