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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Origin of iron meteorite groups IAB and IIICD

Several low Ni-iron meteorites previously classified with group IAB are reclassified with group IIICD because of lower Ge, Ga, W, and Ir concentrations and higher As concentrations. The low Ni extreme of IIICD is now 62 mg/g, and that of IAB is 64 mg/g. It is proposed that the meteorites of both groups formed as individual shock melts on a chondritic parent body. The differences in log element-log Ni slopes of the daughter irons demonstrate that there were detailed differences in the composition and size of phases in the parental material (e.g., more Ni in the sulfides or metal of IAB, or more Ge and Ir in the oxides of IIICD).

Wasson, J. T.↗
NASA NTRS1980

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

Wang, K. L.↗
NASA NTRS1981

Ohmic contacts to GaAs for high-temperature device applications

Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given.

Anderson, W. T., Jr.↗
NASA NTRS1981

High efficiency thin-film GaAs solar cells

The paper demonstrates the feasibility of producing high-efficiency GaAs solar cells with high power-to-weight ratios by organic metallic chemical vapor deposition (OM-CVD) growth of thin epi-layers on suitable substrates. An AM1 conversion efficiency of 18% (14% AM0), or 17% (13% AM0) with a 5% grid coverage is achieved for a single-crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer. Thin GaAs epi-layers OM-CVD grown can be fabricated with good crystallographic quality using a Si-substrate on which a thin Ge epi-interlayer is first deposited by CVD from GeH4 and processed for improved surface morphology

Zwerdling, S.↗
NASA NTRS1983

Theory of silicon superlattices - Electronic structure and enhanced mobility

A realistic tight-binding band-structure model of silicon superlattices is formulated and used to study systems of potential applied interest, including periodic layered Si-Si(1-x)Ge(x) heterostructures. The results suggest a possible new mechanism for achieving enhanced transverse carrier mobility in such structures: reduced transverse conductivity effective masses associated with the superlattice band structure. For electrons in 100-line-oriented superlattices, a reduced conductivity mass arises intrinsically from the lower symmetry of the superlattice and its unique effect on the indirect bulk silicon band gap. An order of magnitude estimate of the range of mobility enhancement expected from this mechanism appears to be consistent with preliminary experimental results on Si-Si(1-x)Ge(x) superlattices.

Moriarty, J. A.↗
NASA NTRS1983

Computer simulation study of multiple germanium gamma-ray sensor arrays

Design studies of large high resolution gamma-ray spectrometer systems employing multiple sensors are greatly facilitated by the use of computer simulation techniques. A study has been made by interfacing a detector geometry code with the EGS-3 version of the Stanford Linear Accelerator Center Monte-Carlo Code which has been modified to run on our VAX computer. The detector responses have been simulated for input photons with energies between 0.1 and 10 MeV. Examples are given to illustrate the performance of complex sensor arrays with different configurations of the anticoincidence system. Of particular interest is a design composed of an array of 7 detector elements each consisting of a thin planar Ge (1 cm thick) detector mounted in front of and in tandem with a large coaxial Ge detector.

Nakano, G. H.↗
NASA NTRS1984

Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

Spitzer, M. B.↗
NASA NTRS1983

Brief characterization of germanium junction field effect transistors (FETs) at 77, 4, and 1.8 K

In the case of modern infrared focal planes, one of the major problems is related to the noise contribution of the cooled, impedance-matching device used as the preamplifier stage in the detector electronics system. An ideal preamp device should have the low-noise advantages of a buried-channel device and operate isothermally with the low-temperature detector array. The Ge JFET might provide this ideal device. A testing program with Ge JFETs is discussed. It is concluded that germanium JFETs offer an attractive alternative for cryogenic preamplifier designs. They operate well with high transconductance and low noise at LHe temperatures. It is believed that these devices point the way for the development of large, integrated-array, long wavelength, infrared focal planes which incorporate germanium detectors, germanium load resistors, and germanium preamplifiers within the same monolithic structure.

Arentz, R. F.↗
NASA NTRS1984

Experiments with phase transitions at very high pressure

A diamond anvil cell is described which was developed for studying hydrogen and other materials to pressure above 100 PGa, including measurements at low temperature. The benefits of X-ray diffraction using synchrotron radiation and using a fixed anode source are examined as well as the optimization of X-ray diffraction at low temperature. A Ge diode detector was incorporated into apparatus for measuring optical absorption, reflectance, and fluorescence in order to enable luminescence studies and Raman spectra were obtained. Results of experiments on Si, Ge, GaP, InAs, hydrogen, benzene, nitrogen, graphite, and the superconductor CeCu2Si2 are given.

Spain, I. L.↗
NASA NTRS1984

Tunable Heterodyne Receiver from 100 Micron to 1,000 Micron for Airborne Observations

Interest in high resolution spectrometers for the submillimeter wavelength range from 100 micron to 1,000 micron is mostly stimulated by molecular spectroscopy in radioastronomy and atmospheric physics, and by plasma diagnostic experiments. Schottky diodes in waveguide mixer technology and InSb-hot electron bolometers are successfully used in the 0.5 to a few millimeter range whereas tandem Fabry-Perot spectrometers combined with photoconductive detectors (Ge:Sb and Ge:Ga) are used for the 100 micron range. Recent research on heterodyne spectrometers, with Schottky diodes in an open structure mixer and a molecular laser as local oscillators, which can be used over the whole wavelength range is summarized.

Roeser, H. P.↗
NASA NTRS1985

Results of Analysis on the Design Variable Cells

Sealed Nickel-Cadmium aerospace cells play a very important role in the mission of the satellite. There has been a constant effort to improve the cycle life, energy density, and reliability of these cells by many manufacturers and users. The Design Variable Cell Program is one systematic approach started by NASA in collaboration with General Electric (GE) towards that goal. Nine important designs were selected for evaluation. Fifty-two nickel-cadmium cells each of 12 Ah nominal capacity manufactured by GE were sent to the Navel weapons Support Center for evaluation of different design variables with which these cells were built.

Vasanth, K. L.↗
NASA NTRS1985

Germanium and lead: Significant differences between meteoritic and photospheric abundances?

The order of the Galactic cosmic ray source (GCRS) composition in terms of first ionization potential (FIP) was examined. For most elements, the degree of volatility is (positively) correlated with the value of the FIP, so that it is not easy to distinguish a correlation of GCRS abundances anomalies with FIP from a correlation with volatility. Only a few permit to distinguish between the two kinds of ordering: if they are depleted relative to refractory metals, volatility must be relevant, if not, FIP is relevant. Among them Cu and Zn would seem to favor FIP. Among the best indicators are Ge and Pb. The abundance anomalies in GCRS are defined relative to a standard which, for the heavy elements concerned, is commonly taken as C1 Carbonaceous Chondrites. Photospheric abundances are more directly representative of the protosolar nebula, and hence of ordinary local galactic (LG) matter. The Ge and Pb reference abundance determinations in the Photosphere and in C1 meteorites are examined and their relevance to the problem with FIP vs. volatility in GCRs is discussed.

Grevesse, N.↗
NASA NTRS1984

Technique for the efficient and reproducible fabrication of electromagnetic levitation coils

A technique has been developed for fabricating electromagnetic induction coils in a reproducible manner. The process utilizes a split mandrel that can be disassembled to remove the mandrel from the coil. The technique has increased coil production rates by a factor of 8 over the freehand winding method. The success rate for producing a functional levitation coil has been increased from 50 percent to 95 percent. The levitation coil designed during this work has successfully levitated and melted a variety of alloys including Cu, Ag, Ag-Ni, Cu-Fe, Fe-C, and Nb-Ge. W was also levitated but not melted at temperatures as high as 2700 C. The highest sample melt temperature achieved was 2400 C for the Nb-Ge samples.

Ethridge, E. C.↗
NASA NTRS1985

Undercooling of molten silicon

Droplets of uncoated molten Si(0.4-0.8 mm diameter) have been undercooled 250 C. Ge droplets of similar size have been undercooled 280 C in a B2O3 flux. The observed nucleation onset temperatures of both Si and Ge droplets are at or below the predicted amorphous phase melting temperatures T(al). The solidified structures were polycrystalline. The nucleation frequency I, calculated from the Si data (20,000/cu cm s at 240 + or - 20 C undercooling), should be an upper limit of the homogeneous nucleation frequency of the crystal phase, since it has not been established that nucleation was homogeneous in these experiments. However, this limiting I for Si indicates that homogeneous nucleation of crystal would not become appreciable in laser pulsing experiments until the liquid Si is undercooled to well below T(al).

Devaud, G.↗
NASA NTRS1985

Effect of Undercooling and Modified Microstructure on the Physical Properties of Material Synthesized in the Drop Tube and Drop Tower

The effects of undercooling and modified microstructure on the physical properties of synthesized materials were investigated. The objectives of this program are: (1) to determine the possible existence of metastable phases and novel physical processes on material prepared in a microgravity environment; and (2) to investigate the feasibility of fabricating advanced electronic devices using material with microstructures obtainable in a microgravity environment. The specific alloys and compounds under study are Au-Ge and immiscible alloys Nb-Ge compounds, and Ga-Bi immiscible alloys, and Ba-Pb-Bi-O. The superconducting and normal state transport properties of the materials under different pressures and in different magnetic fields were determined. The simultaneous study on the physical properties and the microstructure of material will provide information about the potential applications of materials processed in a microgravity environment.

Chu, C. W.↗
NASA NTRS1986

Experimental investigations of trace element fractionation in iron meteorites. III - Elemental partitioning in the system Fe-Ni-S-P

Measurements of solid metal/liquid metal trace element partition coefficients, which are used to interpret the crystallization history of magmatic iron meteorite groups differ greatly between different research groups, using different experimental techniques. Specifically, partition coefficients measured utilizing 'static' experiments which approach equilibrium cannot be reconciled with the results of 'dynamic' experiments which mimic fractional crystallization. We report new tests of our 'static' experimental technique and demonstrate that our methodology yields reliable equilibrium values for Ni, P and Ge partition coefficients. Partition coefficients in the Fe-Ni-S-P system are well matched by interpolation between the Fe-Ni-S and Fe-Ni-P subsystems. In contrast, the predictions of 'dynamic' experiments do not agree with our measurements and, consequently, the ability of 'dynamic' experiments to reproduce iron meteorite Ge vs. Ni fractionation trends successfully must be regarded as fortuitous.

Malvin, D. J.↗
NASA NTRS1986

Qualification Testing of General Electric 50 Ah Nickel-Cadmium Cells with New Separator and New Positive Plate Processing

Forty-two 50 Ah aerospace nickel-cadmium cells were delivered to Goddard Space Flight Center (GSFC) by General Electric (GE) in February, 1985, for the purpose of evaluating and qualifying a new nylon separator material Pellon 2536, and the new GE Positive Plate Nickel Attack Control Passivation process. Testing began in May, 1985, at the Naval Weapons Support Center (NWSC) in Crane, Indiana with standard initial evaluation tests. Life cycling in both Low Earth Orbit (LEO) and Geosynchronous Orbit (GEO) began in July, 1985, with approximately 1200 LEO cycles complete at this writting. Early test results show that cells with positive plate passivation exhibit higher than normal charge voltage characteristics. Other aspects of performance were nominal.

Morrow, G. W.↗
NASA NTRS1986

A rotorcraft flight/propulsion control integration study

An eclectic approach was taken to a study of the integration of digital flight and propulsion controls for helicopters. The basis of the evaluation was the current Gen Hel simulation of the UH-60A Black Hawk helicopter with a model of the GE T700 engine. A list of flight maneuver segments to be used in evaluating the effectiveness of such an integrated control system was composed, based on past experience and an extensive survey of the U.S. Army Air-to-Air Combat Test data. A number of possible features of an integrated system were examined and screened. Those that survived the screening were combined into a design that replaced the T700 fuel control and part of the control system in the UH-60A Gen Hel simulation. This design included portions of an existing pragmatic adaptive fuel control designed by the Chandler-Evans Company and an linear quadratic regulator (LQR) based N(p) governor designed by the GE company, combined with changes in the basic Sikorsky Aircraft designed control system. The integrated system exhibited improved total performance in many areas of the flight envelope.

Ruttledge, D. G. C.↗