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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Ionization and displacement damage effects in high voltage vertical GaN diodes.
Abstract not provided.
Reliability of GaN power devices: Current status and Future challenges.
Abstract not provided.
Fabrication and Performance of Lateral GaN Vacuum Nanoelectronic Devices.
Abstract not provided.
Recent Advancements in (Al)GaN High Electron Mobility Transistor Power Electronics at Sandia
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GaN Vacuum Nanoelectronics
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Visualizing and Quantifying Thermal Conductance and Strain at Compression Bonded GaN-Diamond Interfaces via Optical Methods
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Achieving very-high current density with GaN nanoscale field emitters array
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Progress in Medium-Voltage Vertical GaN Power Devices
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Design and Evaluation of Vertical GaN PN Diode Junction Termination Extensions in High Temperature Environments
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On-chip, Ultra-Low Voltage GaN Vacuum Nanoelectronics
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High-Current (390 A) Large Area Vertical GaN PN Diodes with 1600 V Breakdown
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Development of Medium-Voltage High-Current Vertical GaN Power Devices
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XeF2 – A new MOCVD source for removal of surface Si contamination and in-situ etching of GaN for epitaxial regrowth
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Modeling Heat Flow Across a Compression Bonded GaN-Diamond Interface for Vertical Power Devices
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