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At least 343 records · Page 19

Edge-driven transition between extended quantum anomalous Hall crystal and fractional Chern insulator in rhombohedral graphene multilayers

Fractional Chern insulators (FCI) with fractionally quantized Hall conductance at fractional fillings and an extended quantum anomalous Hall (EQAH) crystal with an integer quantized Hall conductance over an extended region of doping were recently observed in pentalayer graphene. One particularly puzzling observation is the transition between the EQAH and FCI regimes, driven either by temperature or electrical current. Here, in this study, we propose a scenario to understand these transitions based on the topologically protected gapless edge modes that are present in both the FCI and EQAH phases and should be most relevant at temperature scales below the energy gap. Our consideration is based on the simple assumption that the edge velocity in FCI is smaller than that in EQAHE and thus contributes to a higher entropy. We further argue that domains with opposite fractionally quantized Hall conductance are ubiquitous in the devices due to disorder, which gives rise to a network of edge modes. The velocity of the edge modes between domains is further reduced due to edge reconstruction. The edge velocity can also be reduced by current when the occupation of the edge mode approaches the gap edge. The edge entropy therefore drives the transition from EQAH to FCI either by temperature or current at a nonzero temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Topological and magnetic properties of a noncollinear spin state on a honeycomb lattice in a magnetic field

Here, this paper studies the topological and magnetic properties of a noncollinear spin state on a honeycomb lattice that evolves from coplanar to ferromagnetic with a magnetic field applied along the z axis. The coplanar state is stabilized by nearest-neighbor ferromagnetic interactions, single-ion anisotropy along z, and DzyaloshinskiiMoriya interactions between next-nearest-neighbor sites. Below the critical field H$_c$ that aligns the spins, the magnetic unit cell contains six sites and the spin dynamics contains six magnon modes. Although the classical energy is degenerate with respect to the twist angle φ between nearest-neighbor spins, the dependence of the free energy on φ at low temperatures is dominated by the magnon zero-point energy, which contains extremum at φ = πl/3 for integer l. The only unique ground states GS(φ) have l = 0 or 1. For H < H$'_c$, the zero-point energy has minima at even l and the ground state is GS(0); for H$'_c$ < H < H$'_c$, the zero-point energy has minima at odd l and the ground state is GS(π/3). In GS(0), the magnon density of states exhibits five distinct topological phases with increasing field associated with the opening and closing of energy gaps between two or three magnonic bands. While the Berry curvature vanishes for the coplanar φ = 0 phase in zero field, the Berry curvature and Chern numbers exhibit signatures of the five topological phases below H$'_c$. Whereas the Berry curvature and Chern number are sensitive to changes in the magnon density of states within GS(π/3), the inelastic spectrum S(k,ω) is sensitive to changes in the intensity of the magnon modes in the different magnetic phases GS(0) and GS(π/3) rather than the five topological phases within GS(π/3).

Fishman, Randy S. [Oak Ridge National Laboratory (↗

Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level

Here, we report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry of the fractional quantum Hall effect (FQHE) states about half-filling in the lowest Landau level. The HIGFET is specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors ν = 1/3, 2/5, 3/7… and its particle-hole conjugate states at filling factors 1-ν = 2/3, 3/5, 4/7… have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the ν and 1-ν states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Extremely Weakly Interacting ΔS z = 0 and ΔS z = 1 Excitations and Evidence for Fractional Quantization in a Magnetization Plateau: CeSb

The plateau at 1/3 of the saturation magnetization $M_s$ in the metamagnet CeSb is accompanied by a state of ferromagnetic layers of spins in an up-up-down sequence. We measured M and the specific heat C in the plateau, spin wave analyses of which reveal two distinct branches of excitations. Those with $ΔS_z = 1$ as measured by M, coexist with a much larger population of $ΔS_z = 0$ excitations measured by C but invisible to M. The large density of $ΔS_z = 0$ excitations, their energy gap, and their seeming lack of interaction with $ΔS_z = 1$ excitations suggest an analogy with astrophysical dark matter. Furthermore, in the middle of the plateau three sharp jumps in M(H) are seen, the size of which, $0.15 \% M_s$, is consistent with fractional quantization of magnetization per site in the down-spin layers.

36 MATERIALS SCIENCE↗

Novel Valence Transition in Elemental Metal Europium around 80 GPa

We report valence transition could induce structural, insulator-metal, nonmagnetic-magnetic and superconducting transitions in rare-earth metals and compounds, while the underlying physics remains unclear due to the complex interaction of localized 4f electrons as well as their coupling with itinerant electrons. The valence transition in the elemental metal europium (Eu) still has remained as a matter of debate. Using resonant x-ray emission scattering and x-ray diffraction, we pressurize the states of 4f electrons in Eu and study its valence and structure transitions up to 160 GPa. We provide compelling evidence for a valence transition around 80 GPa, which coincides with a structural transition from a monoclinic (C2/c) to an orthorhombic phase ($Pnma$). We show that the valence transition occurs when the pressure-dependent energy gap between 4f and 5d electrons approaches the Coulomb interaction. Our discovery is critical for understanding the electrodynamics of Eu, including magnetism and high-pressure superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Valley-Tunable Even-Denominator Fractional Quantum Hall State in the Lowest Landau Level of an Anisotropic System

Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors (v) are of prime interest as they are predicted to host exotic, topological states of matter. Here, we report here the observation of a FQHS at v = 1/2 in a two-dimensional electron system of exceptionally high quality, confined to a wide AlAs quantum well, where the electrons can occupy multiple conduction-band valleys with an anisotropic effective mass. The anisotropy and multivalley degree of freedom offer an unprecedented tunability of the v = 1/2 FQHS as we can control both the valley occupancy via the application of in-plane strain, and the ratio between the strengths of the short- and long-range Coulomb interaction by tilting the sample in the magnetic field to change the electron charge distribution. Thanks to this tunability, we observe phase transitions from a compressible Fermi liquid to an incompressible FQHS and then to an insulating phase as a function of tilt angle. We find that this evolution and the energy gap of the v = 1/2 FQHS depend strongly on valley occupancy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Coexistence of Interacting Charge Density Waves in a Layered Semiconductor

Coexisting orders are key features of strongly correlated materials and underlie many intriguing phenomena from unconventional superconductivity to topological orders. Here, we report the coexistence of two interacting charge-density-wave (CDW) orders in EuTe 4 , a layered crystal that has drawn considerable attention owing to its anomalous thermal hysteresis and a semiconducting CDW state despite the absence of perfect FS nesting. By accessing unoccupied conduction bands with time- and angle-resolved photoemission measurements, we find that mono- and bi-layers of Te in the unit cell host different CDWs that are associated with distinct energy gaps. The two gaps display dichotomous evolutions following photoexcitation, where the larger bilayer CDW gap exhibits less renormalization and faster recovery. Surprisingly, the CDW in the Te monolayer displays an additional momentum-dependent gap renormalization that cannot be captured by density-functional theory calculations. This phenomenon is attributed to interlayer interactions between the two CDW orders, which account for the semiconducting nature of the equilibrium state. Finally, our findings not only offer microscopic insights into the correlated ground state of EuTe 4 but also provide a general non-equilibrium approach to understand coexisting, layer-dependent orders in a complex system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Unconventional crystal-field splitting in noncentrosymmetric BaTiO 3 thin films

Understanding the crystal-field splitting and orbital polarization in noncentrosymmetric systems such as ferroelectric materials is fundamentally important. In this work, taking BaTiO 3 as a representative material, we investigate titanium crystal-field splitting and orbital polarization in noncentrosymmetric TiO 6 octahedra with resonant x-ray linear dichroism at the Ti L 2,3 edge. The high-quality BaTiO 3 thin films were deposited on DyScO 3 (110) single crystal substrates in a layer-by-layer way by pulsed laser deposition. The reflection high-energy electron diffraction and element specific x-ray absorption spectroscopy were performed to characterize the structural and electronic properties of the films. In sharp contrast to conventional crystal-field splitting and orbital configuration (d xz /d yz < d xy < d 3z 2 -r 2 < d x 2 -y 2 or d xy < d xz /d yz < d x 2 -y 2 < d 3z 2 -r 2 ) expected from compressive or tensile epitaxial strain, respectively, it is revealed that d xz , d yz , and d xy orbitals are nearly degenerate, whereas d 3z 2 -r 2 and d x 2 -y 2 orbitals are split with an energy gap ~100 meV in the epitaxial BaTiO 3 films. We find that the unexpected degenerate orbitals d xz /d yz /d xy result from the competition between the orbital splitting induced by epitaxial strain and that induced by polar distortions of BaTiO 3 films. Our results provide a route to manipulate orbital degree of freedom by switching electric polarization in ferroelectric materials.

36 MATERIALS SCIENCE↗

Carrier properties of Bi(111) grown on mica and Si(111)

A comparison is presented between properties of Bi(111) films grown by Stranski-Krastanov epitaxy on Si(111) 7 × 7 and by van der Waals epitaxy on mica substrates. Thin film morphologies and electronic transport properties of Bi(111) films of variable thickness are investigated for each growth method. Atomic force micrographs for Bi(111) films on mica reveal clearly defined triangular regions consisting of layered steps with height 0.4 nm, corresponding to the Bi(111) bilayer height. Variable-temperature electronic transport measurements show the existence of a quantum confinement-induced energy gap in the film interiors, resulting in a semimetal-to-semiconductor transition. Magnetotransport analysis in a three-carrier model including metallic electrons in surface states and electrons and holes in the films' interiors provides a detailed study of densities, mobilities, and mean-free paths of the three carrier types. Further, improved electronic transport properties are found in Bi(111) films of higher thickness on mica compared to on Si(111), a likely result of the largely strain-free van der Waals epitaxial growth.

36 MATERIALS SCIENCE↗

Electromagnetic Properties of Aluminum-based Bilayers for Kinetic Inductance Detectors

The complex conductivity of a superconducting thin film is related to the quasiparticle density, which depends on the physical temperature and can also be modified by external pair breaking with photons and phonons. This relationship forms the underlying operating principle of Kinetic Inductance Detectors (KIDs), where the detection threshold is governed by the superconducting energy gap. We investigate the electromagnetic properties of thin-film aluminum that is proximitized with either a normal metal layer of copper or a superconducting layer with a lower T-C, such as iridium, in order to extend the operating range of KIDs. Using the Usadel equations along with the Nam expressions for complex conductivity, we calculate the density of states and the complex conductivity of the resulting bilayers to understand the dependence of the pair breaking threshold, surface impedance, and intrinsic quality factor of superconducting bilayers on the relative film thicknesses. The calculations and analyses provide theoretical insights in designing aluminum-based bilayer kinetic inductance detectors for detection of microwave photons and athermal phonons at the frequencies well below the pair breaking threshold of a pure aluminum film.

complex conductivity↗

Pseudo-atomic orbital behavior in graphene nanoribbons with four-membered rings

The incorporation of nonhexagonal rings into graphene nanoribbons (GNRs) is an effective strategy for engineering localized electronic states, bandgaps, and magnetic properties. Here, we demonstrate the successful synthesis of nanoribbons having four-membered ring (cyclobutadienoid) linkages by using an on-surface synthesis approach involving direct contact transfer of coronene-type precursors followed by thermally assisted [2 + 2] cycloaddition. The resulting coronene-cyclobutadienoid nanoribbons feature a narrow 600-meV bandgap and novel electronic frontier states that can be interpreted as linear chains of effective p x and p y pseudo-atomic orbitals. We show that these states give rise to exceptional physical properties, such as a rigid indirect energy gap. This provides a previously unexplored strategy for constructing narrow gap GNRs via modification of precursor molecules whose function is to modulate the coupling between adjacent four-membered ring states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Momentum-exchange interactions in a Bragg atom interferometer suppress Doppler dephasing

Large ensembles of laser-cooled atoms interacting through infinite-range photon-mediated interactions are powerful platforms for quantum simulation and sensing. Here we realize momentum-exchange interactions in which pairs of atoms exchange their momentum states by collective emission and absorption of photons from a common cavity mode, a process equivalent to a spin-exchange or XX collective Heisenberg interaction. The momentum-exchange interaction leads to an observed all-to-all Ising-like interaction in a matter-wave interferometer. A many-body energy gap also emerges, effectively binding interferometer matter-wave packets together to suppress Doppler dephasing in analogy to Mössbauer spectroscopy. The tunable momentum-exchange interaction expands the capabilities of quantum interaction–enhanced matter-wave interferometry and may enable the realization of exotic behaviors, including simulations of superconductors and dynamical gauge fields.

Science & Technology - Other Topics↗

Probing critical phenomena in open quantum systems using atom arrays

At continuous phase transitions, quantum many-body systems exhibit complex, emergent behavior. Most notably, at a quantum critical point, correlations decay as a power law, with exponents determined by a set of universal scaling dimensions. Experimentally probing such power law correlations is extremely challenging, owing to the interplay between decoherence, the vanishing energy gap, and boundary effects. In this work, we used a Rydberg quantum simulator to adiabatically prepare critical ground states of both a one-dimensional ring and a two-dimensional square lattice. By accounting for and tuning the openness of our quantum system, which is well-captured by a single phenomenological length scale, we directly observed power law correlations and extracted the corresponding scaling dimensions. Our work complements recent studies of quantum criticality that use the Kibble-Zurek mechanism and digital quantum circuits.

Fang, Fang [Harvard Univ., Cambridge, MA (United S↗

Split-well resonant-phonon terahertz quantum cascade laser

We present a highly diagonal “split-well resonant-phonon” (SWRP) active region design for GaAs/Al 0.3 Ga 0.7 As terahertz quantum cascade lasers (THz-QCLs). Negative differential resistance is observed at room temperature, which indicates the suppression of thermally activated leakage channels. The overlap between the doped region and the active level states is reduced relative to that of the split-well direct-phonon (SWDP) design. The energy gap between the lower laser level (LLL) and the injector is kept at 36 meV, enabling a fast depopulation of the LLL. Within this work, we investigated the temperature performance and potential of this structure.

47 OTHER INSTRUMENTATION↗

Quantum defects in silicon

The dataset used in the publication titled “High-throughput identification of spin-photon interfaces in silicon. Using an automated first-principles computational workflow, we construct a dataset that details simple charged defects in silicon that are relevant for spin-photon interface applications. It encompasses properties vital for quantum defect design, including charged defect stability, excitation energy (determined using the single-shot hybrid functional approach), emission brightness, electronic structures, and more. The dataset encompasses all charged defects stable within the energy gap. We emphasized the importance of defect-bound excitons as telecom band emitters and proposed promising candidates for spin-photon interfaces.

36 MATERIALS SCIENCE↗

Conformal geometry from entanglement

In a physical system with conformal symmetry, observables depend on cross-ratios, measures of distance invariant under global conformal transformations (conformal geometry for short). We identify a quantum information-theoretic mechanism by which the conformal geometry emerges at the gapless edge of a 2+1D quantum many-body system with a bulk energy gap. We introduce a novel pair of information-theoretic quantities (\mathfrak{c}_{\textrm{tot}}, \eta) ( 𝔠 tot , η ) that can be defined locally on the edge from the wavefunction of the many-body system, without prior knowledge of any distance measure. We posit that, for a topological groundstate, the quantity \mathfrak{c}_{\textrm{tot}} 𝔠 tot is stationary under arbitrary variations of the quantum state, and study the logical consequences. We show that stationarity, modulo an entanglement-based assumption about the bulk, implies (i) \mathfrak{c}_{\textrm{tot}} 𝔠 tot is a non-negative constant that can be interpreted as the total central charge of the edge theory. (ii) \eta η is a cross-ratio, obeying the full set of mathematical consistency rules, which further indicates the existence of a distance measure of the edge with global conformal invariance. Thus, the conformal geometry emerges from a simple assumption on groundstate entanglement. We show that stationarity of \mathfrak{c}_{\textrm{tot}} 𝔠 tot is equivalent to a vector fixed-point equation involving \eta η , making our assumption locally checkable. We also derive similar results for 1+1D systems under a suitable set of assumptions.

Kim, Isaac H.↗

Predicting magnetic properties of single-molecule magnets from self-interaction-free density-functional theory (Final Report)

In this project we investigated electronic structure of an intermediate-sized copper-based molecule and magnetic and hyperfine properties of several small non-magnetic and magnetic molecules including transition-metal elements by applying self-interaction corrections to density functional theory (DFT). In a sufficient number of cases, DFT-calculated electronic structure and magnetic properties of single-molecule magnets qualitatively differ from corresponding experimental data. This is partly due to self-interacting electrons within the DFT formalism. Recently, an efficient method to correct the self-interactions was proposed, i.e., Fermi-Lowdin prbital (FLO) based self-interaction corrected (SIC) methodology, within DFT. Henceforth, this method is referred to as FLO-SIC method which exists in FLOSIC code. We used this FLO-SIC method for our studies of electronic structure and magnetic and hyperfine properties of small magnetic molecules and non-magnetic molecules. Our study will provide insight into predictions of magnetic properties of single-molecule magnets where self-interaction corrections play a critical role. There are two components of this project. In the first work, we studied the electronic structure of a planar mononuclear Cu-based molecule in two oxidation states, using DFT with the FLO-SIC method. We chose this system because it is small enough and it includes a transition metal element. We found that the standard FLO-SIC method takes too much compute time even for the small transition-metal molecule and so we slightly modified the method in order to expedite the process. In the dianionic state, we found that the FLO-SIC spin density agrees quantitatively with accurate quantum chemistry methods, while DFT spin density without self-interaction corrections are severely deviated from the quantum chemistry methods. We also showed that the energy gap between the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) of the dianionic state is larger than that of the monoanionic state. This result is consistent with experimental data. In the second work, we investigated how the interaction between the electron spin and nuclear spin is affected by electron self-interactions within small non-magnetic and magnetic molecules. Such an interaction is called hyperfine interaction. For molecules without significant orbital angular momentum, the hyperfine interaction consists of Fermi contact and dipolar interaction terms. Since the Fermi contact term depends on electron spin density at the nuclear site, it would be highly affected by self-interaction corrections. Therefore, we calculated the hyperfine interaction for the small molecules using DFT with the slightly modified expedited FLO-SIC method which was obtained in the first work, and compared the results to experimental data and DFT calculations without self-interaction corrections. We found significant improvement of the Fermi contact term computed using the FLO-SIC method for small magnetic molecules. Overall, the first and second work provided positive outlook of application of the FLO-SIC method to magnetic molecules and systems including transition-metal elements.

36 MATERIALS SCIENCE↗

Regrowth and Selective Area Growth of GaN for Vertical Power Electronics

Gallium Nitride (GaN) has a great potential in high-power and high-frequency applications due to its wide energy gap and good transport property. So far all commercial GaN optoelectronic and electronic devices have planar junctions and heterostructures prepared by epitaxial growth. To take the advantage of the merits of GaN material properties, more sophisticated device configurations such as current-aperture vertical electron transistors (CAVETs), junction field-effect transistors (JFETs), and super-junction (SJ) devices require the ability to form in-plane, lateral junctions by selective area doping (SAD). In this project, we explored a novel approach of realizing SAD through selective-area etching (SAE) followed by selective-area growth (SAG).

36 MATERIALS SCIENCE↗