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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Extended performance technology study 30-cm thruster

The extended performance technology study was an investigation of advanced discharge chambers and thruster components that were designed to operate under conditions which result in an increase in the thrust and thrust to power ratio of the state of the art J-series thruster. The high level of performance was achieved by a discharge chamber that employs a ring cusp magnetic confinement arrangement and a three grid ion extraction assembly. It is shown that the ring cusp magnetic field geometry confines the plasma to the volume immediately adjacent to the ion extraction assembly. A high emission current hollow cathode that demonstrated operation at an emission current as high as J sub E = 40 A, and measurements which show the breakdown voltage of individual sections of the J-series propellant flow electrical isolator is about 340 V per section are investigated.

Beattie, J. R.↗
NASA NTRS1979

NASCAP modelling of high-voltage power system interactions with space charged-particle environments

A simple space power system operating in geosynchronous orbit was analyzed. This system consisted of two solar array wings and a central body. Each solar array wing was considered to be divided into three regions operating at 2000 volts. The center body was considered to be an electrical ground with the array voltages both positive and negative relative to ground. The system was analyzed for both a normal environment and a moderate geomagnetic substorm environment. Initial results indicate a high probability of arcing at the interconnects on the negative operating voltage wing. The dielectric strength of the substrate may be exceeded giving rise to breakdown in the bulk of the material. The geomagnetic substorm did not seem to increase the electrical gradients at the interconnects on the negative operating voltage wing but did increase the gradients on the positive operating voltage wing which could result in increased coupling current losses.

Stevens, N. J.↗
DOE OSTI2022

Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation

We characterized the electric field distribution of GaN-on-GaN p–n diodes with partially compensated ion-implanted edge termination (ET) using an electric field induced second harmonic generation technique (EFISHG). The distributed electric field from the anode to the outer edge of the ET demonstrates the effectiveness of the ET structure. However, EFISHG also shows that its effectiveness is strongly dependent on the acceptor charge distribution in the ET's partially compensated layer (PC). A generally lower amount of acceptor charge can be inferred from the measured electric field distribution resulting from excessive ion implantation energy or dose during ET fabrication and causing lower than optimal breakdown voltage. Localized field crowding can be observed when the remaining acceptors uncompensated by the implant in the PC layer are nonuniformly distributed around the periphery of the devices. Important information can be obtained from these direct electric field measurements and used for optimizing the device design and fabrication process.

Cao, Yuke↗
DOE OSTI2020

Interactions between atmospheric pressure plasmas and metallic catalyst particles in packed bed reactors

Atmospheric-pressure plasmas sustained in packed bed reactors (PBRs) are being investigated for chemical conversion of gases and pollution control. Metallic catalysts added to the surfaces of the dielectric beads of PBRs can increase the energy efficiency and selectivity of chemical processes by reducing operating temperature and providing additional reaction pathways. In this paper, results from a computational investigation of plasma surface interactions between micron-scale metallic catalysts and humid-air plasmas in PBRs are discussed. Here we found that high plasma density regions form in the proximity of the metallic catalysts. These higher-density plasma regions were confirmed experimentally using ICCD imaging. The intense plasmas result from geometrical electric field enhancement and redistribution of charges within the conductive particles, leading to further enhancement. The high electric field at the triple points of the catalysts can produce electric field emission of electrons, which provides a pre-ionization source or additional source of electrons. These regions of high electric field and sources of electrons guide discharges towards the catalysts and increases fluxes of excited species, ions, electrons and photons to their surfaces. These fluxes are focused primarily at the triple points between the metal, dielectric and gas. As a result, the catalyst is locally heated, which could lead to further increased rates of thermocatalytic reactions on the surface. Surface roughness of the metal inclusions can lead to additional electric field enhancement, which changes the character of the discharges in the vicinity of the catalysts while reducing breakdown voltage.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

94 GHz microplasma sustained by a photonic crystal

A photonic crystal (PhC) with a single vacancy sustains an argon microplasma at 94 GHz. The PhC consists of a 7 × 13 array of small alumina rods, each 250 μm in radius. The PhC has a forbidden bandgap from 70–105 GHz. The vacancy creates an internal electromagnetic resonance at 94 GHz that intensifies the electric field of an incident wave to 5 × 10 5 V m –1 . Breakdown of low-pressure argon gas (80 mbar) occurs and forms a stable, ellipsoidal plasma inside the crystal. The central core of the microplasma is probed using a 200 μm optical fiber inserted into the PhC. The rotational temperature of the CH molecule is estimated from a numerical fit of the plasma emission and is found to increase from 450–650 K with both pressure (200–1000 mbar) and incident wave power (100 mW–1100 mW). Under these conditions, the electron density increases with both power and pressure from 0.5–1.5 × 10 20 m –3 . Furthermore, this plasma density range brackets the electron plasma frequency at 94 GHz. The results are compared with a similar microplasma operating at 44 GHz.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Microfabricated Ion Traps on Sapphire for Larger Trap Areas and Higher Qubit Count

Surface ion traps are a promising platform for quantum computing due to their potential to store large numbers of ions that can be addressed by electrical and optical control signals in order to implement quantum algorithms. Increasing the power of the quantum computer requires increasing the number of ions, but this poses a significant challenge in that it leads to a non-linear increase in on-chip power dissipation. The primary contributor to this power scaling in current devices is the capacitance between the radio frequency (RF) electrode and the metal plane that shields the silicon substrate from the RF signals applied to it. Silicon has traditionally been chosen for the substrate material for compatibility with the processing required for multi-metal-level traps. In this work, we address these capacitance and fabrication challenges by replacing the commonly used silicon substrate with an insulating sapphire substrate to fabricate a multi-metal-level ion trap, while still employing common semiconductor manufacturing techniques. This change in substrate allows the design to remove the metal shielding from the device design, reducing the capacitance of the RF electrode. The electrical characteristics of these traps were measured, specifically trap impedance, capacitance, and voltage breakdown, and compared to nearly identical silicon trap devices. Finally, we used laser cutting techniques to shape a sapphire wafer into bowtie shapes matching silicon traps previously fabricated at Sandia National Labs to explore solutions for integrating sapphire substrates into non-rectangular ion trap designs.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Adroit Materials Final Scientific/Technical Report kV-class GaN-based Junction Barrier Schottky diodes using ion implantation

The primary aim of this research was to develop GaN-based Junction Barrier Schottky (JBS) diodes using an innovative ion implantation process previously established in ARPA-E funded projects. The central focus of our proposed technology revolves around selective area p-type doping, accomplished through the implantation of Mg ions. This approach builds upon our successes in the ARPA-E PNDIODES program, advancing towards commercial device integration. Selective area p-doping plays a pivotal role in realizing the next generation of GaN-based power devices, capable of significantly reducing the carbon footprint in the United States by several million tons. While ion implantation is a well-established technique for achieving selective area doping in SiC and Si materials, its feasibility in GaN had not been demonstrated until now. To fabricate high voltage GaN JBS diodes, we initially created thick n-type drift layers with high carrier concentrations ranging from 5×1015 cm-3 to 2×1016 cm-3 and very high mobilities. Subsequently, Mg ions were selectively implanted to form p-type islands within the n-type drift layer. To reduce electric field crowding at the edge of the diode and to achieve high breakdown voltage, junction edge termination (JTE) and floating field rings (FFRs) were formed using Mg implantation. A high temperature, high-pressure post-implantation annealing process was carried out to activate the implanted Mg ions. As a result, we were able to demonstrate GaN JBS diodes with a breakdown voltage of 915 V and an on-resistance of 0.6 mΩ·cm2. These diodes exhibited a forward bias current density of 1 kA/cm2 at 1.5 V. Subsequently, we achieved GaN JBS diodes with a remarkable breakdown voltage of 1900 V and an on-resistance of 1.9 mΩ·cm2, capable of sustaining a forward bias current density of 0.5 kA/cm2 at 1.5 V. Importantly, the ON and OFF state performance of these GaN JBS diodes surpassed that of Si and SiC-based power diodes reported in existing literature. Lastly, we successfully grew 60 μm thick GaN:Si layers using HVPE with a carrier concentration of approximately 3 to 5×1015 cm-3. Based on simulation and empirical data these devices represent 5 kV GaN JBS power diodes, leveraging the developed processes in this project.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Here we report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS has an ideality factor of 1.03, a turn-on voltage of 0.75 V, and a specific differential ON-resistance of 0.6 mΩ·cm 2 . The breakdown voltage of the JBS diode is 915 V, corresponding to a maximum electric field of 3.3 MV cm –1 . These results underline that high-performance GaN JBS can be realized using Mg implantation and high-temperature UHP post-activation anneal.

42 ENGINEERING↗
NASA NTRS1992

Characterization of polybenzimidazole (PBI) film at high temperatures

Polybenzimidazole, a linear thermoplastic polymer with excellent thermal stability and strength retention over a wide range of temperatures, was evaluated for its potential use as the main dielectric in high temperature capacitors. The film was characterized in terms of its dielectric properties in a frequency range of 50 Hz to 100 kilo-Hz. These properties, which include the dielectric constant and dielectric loss, were also obtained in a temperature range from 20 C to 300 C with an electrical stress of 60 Hz, 50 V/mil present. The alternating and direct current breakdown voltages of silicone oil impregnated films as a function of temperature were also determined. The results obtained indicate that while the film remained relatively stable up to 200 C, it exhibited an increase in its dielectric properties as the temperature was raised to 300 C. It was also found that conditioning of the film by heat treatment at 60 C for six hours tended to improve its dielectric and breakdown properties. The results are discussed and conclusions made concerning the suitability of the film as a high temperature capacitor dielectric.

Hammoud, Ahmad N.↗
NASA NTRS1993

Mechanical stimulation of skeletal muscle generates lipid-related second messengers by phospholipase activation

Repetitive mechanical stimulation of cultured avian skeletal muscle increases the synthesis of prostaglandins (PG) E2 and F2 alpha which regulate protein turnover rates and muscle cell growth. These stretch-induced PG increases are reduced in low extracellular calcium medium and by specific phospholipase inhibitors. Mechanical stimulation increases the breakdown rate of 3H-arachidonic acid labelled phospholipids, releasing free 3H-arachidonic acid, the rate-limiting precursor of PG synthesis. Mechanical stimulation also increases 3H-arachidonic acid labelled diacylglycerol formation and intracellular levels of inositol phosphates from myo-[2-3H]inositol labelled phospholipids. Phospholipase A2 (PLA2), phosphatidylinositol-specific phospholipase C (PLC), and phospholipase D (PLD) are all activated by stretch. The stretch-induced increases in PG production, 3H-arachidonic acid labelled phospholipid breakdown, and 3H-arachidonic acid labelled diacylglycerol formation occur independently of cellular electrical activity (tetrodotoxin insensitive) whereas the formation of inositol phosphates from myo-[2-3H]inositol labelled phospholipids is dependent on cellular electrical activity. These results indicate that mechanical stimulation increases the lipid-related second messengers arachidonic acid, diacylglycerol, and PG through activation of specific phospholipases such as PLA2 and PLD, but not by activation of phosphatidylinositol-specific PLC.

NASA Discipline Number 40-40↗
NASA NTRS2012

Coincident Observation of Lightning using Spaceborne Spectrophotometer and Ground-Level Electromagnetic Sensors

The present study aims at assessing a possible new way to reveal the properties of lightning flash, using spectrophotometric data obtained by FORMOSAT-2/ISUAL which is the first spaceborne multicolor lightning detector. The ISUAL data was analyzed in conjunction with ground ]based electromagnetic data obtained by Duke magnetic field sensors, NLDN, North Alabama Lightning Mapping Array (LMA), and Kennedy Space Center (KSC) electric field antennas. We first classified the observed events into cloud ]to ]ground (CG) and intra ]cloud (IC) lightning based on the Duke and NLDN measurements and analyzed ISUAL data to clarify their optical characteristics. It was found that the ISUAL optical waveform of CG lightning was strongly correlated with the current moment waveform, suggesting that it is possible to evaluate the electrical properties of lightning from satellite optical measurement to some extent. The ISUAL data also indicated that the color of CG lightning turned to red at the time of return stroke while the color of IC pulses remained unchanged. Furthermore, in one CG event which was simultaneously detected by ISUAL and LMA, the observed optical emissions slowly turned red as the altitude of optical source gradually decreased. All of these results indicate that the color of lightning flash depends on the source altitude and suggest that spaceborne optical measurement could be a new tool to discriminate CG and IC lightning. In the presentation, we will also show results on the comparison between the ISUAL and KSC electric field data to clarify characteristics of each lightning process such as preliminary breakdown, return stroke, and subsequent upward illumination.

Adachi, Toru↗
NASA NTRS2001

High Voltage Design Guidelines: A Timely Update

The evolving state of high voltage systems and their increasing use in the space program have called for a revision of the High Voltage Design Guidelines, Marshall Space Flight Center technical document MSFC-STD-531, originally issued September 1978 (previously 50 M05189b, October 1972). These guidelines deal in depth with issues relating to the specification of materials, particularly electrical insulation, as well as design practices and test methods. Emphasis is on corona and Paschen breakdown as well as plasma effects for Low Earth Orbiting systems. We will briefly review the history of these guidelines as well as their immediate predecessors and discuss their range of applicability. In addition, this document has served as the basis for several derived works that became focused, program-specific HV guidelines. We will briefly review two examples, guidelines prepared for the X-33 program and for the Space Shuttle Electric Auxiliary Power Unit (EAPU) upgrade.

Hillard, G. Barry↗
DOE OSTI2023

Uncovering microstructure and composition susceptibility of high permittivity ceramic granules to plasma-induced arc breakdown

Effective diversion of surge currents is vital to prevent unwanted damage to sensitive electronics. Among the most successful and efficient strategies relies on a dielectric stimulated arc breakdown mechanism with high permittivity ceramic granules in a spark-gap geometry. Although generally regarded as a self-healing process, substantial energy deposition may occur that, over time, diminishes the ability to withstand repeated electrical assaults. We investigate the susceptibility of lead–magnesium–niobate–lead titanate (PMN–PT) granule microstructure and composition changes following many exposures to high voltage impulses resulting in arc breakdown. Scanning electron microscopy and energy-dispersive spectroscopy mapping reveal a broad range of thermal and mechanical defects entailing thermal reduction of constituent PMN–PT metal ions and recasting due to rapid eruption of volatile species. Additionally, evidence of local melting and microcracking are apparent that can have deleterious impact on the proper function of the granules, namely, the ability to concentrate electric fields across air gaps to establish and sustain discharge pathways. We propose that the localized nature of damage and stochasticity associated with the dielectric stimulated breakdown mechanism may allow granules to maintain functionality provided no permanent conduction paths are established.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Shaped Beams from Diamond Field-Emitter Array Cathodes

Diamond field-emitter arrays (DFEAs) are arrays of diamond pyramids with exquisitely sharp tips and micrometer-scale bases that produce high current densities. These arrays can be fabricated in arbitrary shapes, ranging from single tips to many millions of tips, so that they produce an inherently shaped electron beam. Each tip emits a modest current, but the large dense array can produce many Amps. We are investigating these cathodes for use in dielectric wakefield accelerators; however, they may also be applicable to vacuum microwave tubes. Recently, shaped beam production and transport have been demonstrated in the 1.3-GHz RF gun at the Argonne Cathode Test Stand at the Argonne National Laboratory. The charge was measured on a Faraday cup and the beam imaged on a YAG screen with peak electric field gradients on the cathode ranging from 12 to 35 MV/m. Three cathode geometries were tested: one 1-mm equilateral triangle with 7-mu m base pyramids and 10-mu m pitch, one 1-mm equilateral triangle with 10-mu m base and 25-mu m pitch, and one sparse 5 x 5 square array with 20-mu m base and 400-mu m pitch. The two triangular arrays emitted 35 nC in an RF macropulse at 35 MV/m and 13-nC charge at 27 MV/m, respectively, while the sparse array emitted 0.060-nC charge at 15 MV/m. This article presents the results of the triangular array experiments, including damage due to breakdown in the RF gun and initial models of tip-to-tip shielding.

Cathodes↗
NASA NTRS1998

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

Neudeck, Philip G.↗
NASA NTRS1991

Mechanical stimulation of skeletal muscle generates lipid-related second messengers by phospholipase activation

Repetitive mechanical stimulation of cultured avian skeletal muscle increases the synthesis of prostaglandins E2 and F2(alpha) which regulate protein turnover rates and muscle cell growth. Mechnical stimulation significantly increases the breakdown rate of (3)H-arachidonic acid labelled phospholipids, releasing free (3)H-arachidonic acid, and the rate-limiting precursor of prostaglandin synthesis. Mechanical stimulation also significantly increases (3)H-arachidonic acid labelled diacylglycerol formation and intracellular levels of inositol phosphates from myo-2-(3)H inositol labelled phospholipids. Phospholipase A2, phosphatidylinositol-specific phospholipase C (PLC), and phospholipase D (PLD) are activated by stretch. The lipase inhibitors bromophenacylbromide and RHC80267 together reduce stretch-induced prostaglandin production by 73-83 percent. The stretch-induced increases in prostaglandin production, (3)H-arachidonic acid labelled phospholipid breakdown, and (3)H-arachidonic acid labelled diacylglycerol formation occur independently of cellular electrical activity (tetrodotoxin insensitive) whereas the formation of inositol phosphates from myo-2-(3)H inositol labelled phospholipids are dependent on cellular electrical activity. These results indicate that mechanical stimulation increases the lipid-related second messengers arachidonic acid, diacylglycerol, and prostaglandins through activation of specific phospholipases such as PLA2 and PLD, but not by activation of phosphatidylinositol-specific PLC.

Vandenburgh, Herman H.↗
NASA NTRS1996

Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes

The purpose of this study is to use both theoretical and experimental evidence to determine the impact of doping imbalance and symmetry on the physical and electrical characteristics of doped multiple quantum well avalanche photodiodes (APD). Theoretical models have been developed to calculate the electric field valence and conduction bands, capacitance-voltage (CV), and carrier concentration versus depletion depth profiles. The models showed a strong correlation between the p- and n-doping balance inside the GaAs wells and the number of depleted stages and breakdown voltage of the APD. A periodic doping imbalance in the wells has been shown to result in a gradual increase (or decrease) in the electric field profile throughout the device which gave rise to partially depleted devices at low bias. The MQW APD structures that we modeled consisted of a 1 micron top p(+)-doped (3 x 10(exp 18) cm(exp -3)) GaAs layer followed by a 1 micron region of alternating layers of GaAs (500 A) and Al(0.42)Ga(0.58)As (500 A), and a 1 micron n(+) back layer (3 x 10(exp 18) cm(exp -3)). The GaAs wells were doped with p-i-n layers placed at the center of each well. The simulation results showed that in an APD with nine doped wells, and where the 50 A p-doped layer is off by 10% (p = 1.65 x 10(exp 18) cm(exp -3), n = 1.5 x 10(exp 18) cm(exp -3)), almost half of the MQW stages were shown to be undepleted at low bias which was a result of a reduction in the electric field near the p(+) cap layer by over 50% from its value in the balanced structure. Experimental CV and IV data on similar MBE grown MQW structures have shown very similar depletion and breakdown characteristics. The models have enabled us to better interpret our experimental data and to determine both the extent of the doping imbalances in the devices as well as the overall p- or n-type doping characteristics of the structures.

Menkara, H. M.↗