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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Enabling New Approaches to Low-Cost Dopant Patterning for Interdigitated Back Contact Crystalline Silicon Solar Cells: Cooperative Research and Development, CRADA Number CRD-17-00665 (Final Report)

NREL is sub to the Department of Energy (DOE) Photovoltaic Research & Development (PVRD) project, titled "New Approaches to Low-Cost Scalable Doping for Interdigitated Back Contact Crystalline Silicon Solar Cells", awarded to Colorado School of Mines. The goal of this project was to develop an industrially relevant dopant patterning technique that enable high performing, cost efficient Interdigitated Back Contact (IBC) solar cells based on n-Cz silicon wafer. Several possibilities were explored at the beginning of the project and the masked plasma deposition was deselected as the most promising and industrially relevant. This method was thoroughly explored ion the course of the project, its limitations revealed and mitigated. NREL successfully the masked deposition integrated into the cell's process flow and produced the cells, alongside with numerous process development steps and application of in-house advanced characterization techniques. The report describes these developments by the task and in detail.

14 SOLAR ENERGY↗
DOE OSTI2025

Poly-Si Passivating Contacts Hydrogenation by Microwave Annealing

Hydrogenation is a crucial step in the fabrication of high-efficiency silicon solar cells. In this study, we demonstrate the for the first time effectiveness of hydrogen activation via microwave annealing of hydrogen-rich dielectrics coated on poly-Si passivating contacts. This method is compared with conventional hydrogenation techniques, such as annealing in N2 in the presence of a hydrogen-rich source (such as hydrogenated aluminum oxide (AlOx:H), hydrogenated silicon nitride (SiNy:H), or a AlOx:H/SiNy:H stack). Key improvements observed include a reduction in J0 from 30 to <5 fA/cm2, an increase in iVoc from 690 to >730 mV, and an enhancement in effective lifetime (teff) from 0.6 to ~3.5 milliseconds on phosphorus-doped poly-Si/SiO2 passivating contact samples. With a very short annealing time of ~1-2 minutes, the samples passivated by AlOx:H, SiNy:H, or the stack show similar performance to samples subjected to 30 minutes of nitrogen annealing. Photoluminescence (PL) spectra corroborate our findings regarding the hydrogenation of the poly-Si layer and the c-Si substrate, with an increase in PL intensity after microwave annealing. Ultimately, our work suggests that microwave annealing could be a promising addition, offering flexibility to traditional firing hydrogenation processes.

14 SOLAR ENERGY↗
DOE OSTI2022

Measurement of Resistance, Porosity, and Water Contact Angle of Porous Transport Layers for Low-Temperature Electrolysis Technologies

The porous transport layer is an important component of low-temperature electrolysis devices, such as proton exchange membrane water electrolyzers or anion exchange membrane water electrolyzers. PTLs have significant influence on the cell performance as their bulk resistance can impact the ohmic resistance, their contact resistance can impact electrode performance, and their structure can impact the liquid flow to the cell, which could cause mass-transport losses. In order to improve cell performance, optimization of the PTL is critical. Standardized protocols should be utilized to adequately compare PTLs being developed from different institutions. This method will detail a standardized protocol for measuring the resistance of the PTL using a four-wire setup and will also detail a process for measuring the porosity and water contact angle of the PTL using capillary flow porometry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Loss Analysis and Performance Optimization Pathways of 729-mV VocSi Solar Cells with Poly-Si on Locally-Etched Dielectric Passivating Contacts

In this article, the performance analysis of a 22.5% efficient polysilicon on silicon oxide (poly-Si/SiOx) passivated contact solar cells with deliberately introduced pinholes using metal-assisted chemical etching (MACE) has been performed with the help of optical analysis using Sunsolve and electrical analysis using Quokka3. The power loss is maximum due to recombination and resistive losses in the bulk (~0.76 mW/cm2 ) followed by power loss due to rear contact recombination (~0.35 mW/cm2 ). Recombination at the front surface also contributes to 0.24 mW/cm2. The effect of improving the bulk lifetime and lowering the recombination current density at the rear side on Voc, FF and efficiency has been investigated.

MACE↗
DOE OSTI2022

Novel Process for Screen-Printed Selective Area Front Polysilicon Contacts for TOPCon Cells Using Laser Oxidation

The efficiency potential of double-side tunnel oxide passivated contact (DS-TOPCon) solar cells is limited by parasitic absorption in the front poly-Si layer, despite excellent passivation and high V OC . The use of patterned poly-Si only under the front metal grid lines can significantly reduce the parasitic absorption loss without sacrificing voltage. In this work, we demonstrate a simple, manufacturing-friendly method of patterning the front poly-Si using a nanosecond UV (355 nm) laser. We found that with laser powers ≥3 W at a 400 mm/s scan speed, an estimated 1–4 nm thick stoichiometric SiO 2 layer was grown on TOPCon. This served as a mask for KOH-etching of 200 nm poly-Si, allowing for patterning of poly-Si fingers required for selective TOPCon. While laser powers above 3 W caused substantial deterioration in passivation quality, the resulting damage in J 0 was largely recovered by subsequent PECVD SiN x deposition. At 3 W, the full area J 0 was found to be 36.8 fA·cm –2 . Furthermore, this translates to 1.68 fA·cm –2 for 4.48% coverage from the wing area of the polyfinger lines (100 lines–100 μm wide and 30 μm metal) contributing to a total front J 0 of ~10 fA·cm –2 , well suited for 25% efficient solar cells

42 ENGINEERING↗
DOE OSTI2022

Codesigning Alloy Compositions of CdSe y Te 1− y Absorbers and Mg x Zn 1− x O Contacts to Increase Solar Cell Efficiency

Thin‐film solar cells such as CdTe are a major commercial photovoltaic technology, with more than 25 GW installed worldwide and levelized costs of electricity competitive with fossil fuels. Further progress may result from integrating CdSe y Te 1− y absorbers with Mg x Zn 1− x O contacts, but the device efficiency is difficult to maximize due to coupled dependence on chemical composition of both alloys. Herein, a high‐throughput approach is demonstrated to codesign chemical compositions in alloyed Mg x Zn 1− x O/CdSe y Te 1− y thin‐film solar cells, using combinatorial libraries of PV devices with orthogonal composition gradients in CdSe y Te 1− y absorbers and Mg x Zn 1− x O contacts. It is found that the solar cell performance is a strong and coupled function of both elemental compositions, with efficiency up to 17.7% ( V OC = 836 mV, fill factor = 69%, J SC = 30.6 mA cm −2 ) at atomic compositions of Mg/(Mg + Zn) ≈18% and average Se/(Se + Te) ≈4%. These performance trends among >100 devices are explained by >100 ns lifetime of photoexcited charge carriers at the Mg x Zn 1− x O/CdSe y Te 1− y interface where strong Se accumulation is also observed. This study reports the optimal compositions of the commercially relevant Mg x Zn 1− x O/CdSe y Te 1− y solar cells and demonstrates a general approach to codesigning performance of alloyed thin‐film solar cells and other optoelectronic devices.

14 SOLAR ENERGY↗
DOE OSTI2022

Microwave assisted heating of plastic waste: Effect of plastic/susceptor (SiC) contacting patterns

We discuss plastic accumulation as a growing sustainability challenge. Most plastics are thermally inert at room temperature, requiring high temperatures for depolymerization. In the quest for developing sustainable plastic upcycling, we investigate silicon carbide (SiC) as microwave absorbing susceptors for reaching depolymerization temperatures. We utilize three SiC topologies – particles, hot-pressed plastic films containing SiC particles, and monoliths. SiC particles of >0.5 mm in diameter can provide heating rates approaching ~200 °C/min at modest powers. Still, physically mixed plastic-susceptor beds suffer from density differences, causing non-uniform contact during plastic softening and melting. Hot-pressed plastic films containing SiC particles allow uniform plastic-susceptor contact but suffer from slow heating as only a single layer of susceptors exists between polymer layers. SiC monoliths mitigate these challenges by preferentially dissipating the microwaves and rapidly heating the plastics independently of polymeric properties.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Investigation of chemical stabilities and contact angle of 3D printed polymers with CO 2 capture solvents to enhance absorber performance

Increasing absorption rate in aqueous amine CCS systems is one avenue to decrease capital cost by reducing the overall size of the absorber column. One potential route is by replacing conventional steel packing with custom designed packing made from 3D printed polymers. 3D printing offers endless flexibility in packing designs to better enhance liquid/gas contact, increase CO 2 mass transfer and create compact absorber columns. Additionally, before exploring novel packing designs, it is necessary to identify polymer materials that can be 3D printed while also showing long-term physical and surface property stability upon exposure to corrosive amine solutions. Four polymers that are commonly used for 3D printing were evaluated using CO 2 -loaded amine solution at temperatures typically observed in the absorber column. Three polymers, high-density polystyrene (HDPS), acrylonitrile butadiene styrene (ABS) and nylon were found to be physically stable after 5000 hr of amine exposure at temperatures up to 60 °C. The contact angle (wetting) of water and CO 2 -loaded aqueous amine solution on the polymer surfaces were also stable after exposure to the CO2-loaded amine solution.

36 MATERIALS SCIENCE↗
DOE OSTI2026

A robust framework for frictional fault contact in geological formations using a stabilized augmented Lagrangian approach

Numerical simulations are essential to evaluate the performance and safety of engineered subsurface systems such as geological carbon storage sites, enhanced geothermal fields, and oil and gas reservoirs. A key challenge lies in accurately modeling the frictional contact behavior along fault surfaces. This problem involves inequality constraints that arise from the physics of frictional slip, requiring specialized numerical methods to handle the resulting highly nonlinear and path-dependent behavior. Here, in this work, we address this challenge using an Augmented Lagrangian Method (ALM) implemented via the Uzawa algorithm. The formulation employs mixed finite element spaces, combining low-order piecewise linear displacements within the 3D domain cells with piecewise constant tractions defined on the fault surfaces. Furthermore, to ensure stability and satisfy the inf-sup condition, the discrete displacement space is enriched with face bubble functions on both sides of the contact interfaces. This approach offers several advantages over other stabilization techniques that rely on additional terms, and it integrates naturally in the Uzawa framework.

58 GEOSCIENCES↗
DOE OSTI2020

Effects of Zr substitution on soot combustion over cubic fluorite-structured nanoceria: Soot-ceria contact and interfacial oxygen evolution

Ceria is widely used as a catalyst for soot combustion, but effects of Zr substitution on the reaction mechanism is ambiguous. The present work elucidates effects of Zr substitution on soot combustion over cubic fluorite-structured nanoceria. The nanostructured CeO 2 , Ce 0.92 Zr 0.08 O 2 , and Ce0.84Zr0.16O2 composed of 5–6 nm crystallites display Tm-CO 2 (the temperature at maximum CO 2 yield) at 383, 355, and 375°C under 10 vol.% O 2 /N 2 , respectively. Additionally, the size of agglomerate decreases from 165.5 to 51.9–57.3 nm, which is beneficial for the soot-ceria contact. Moreover, Zr increases the amount of surface oxygen vacancies, generating more active oxygen (O2- and O-) for soot oxidation. Thus, the activities of Ce 0.92 Zr 0.08 O 2 and Ce 0.84 Zr 0.16 O 2 in soot combustion are better than that of CeO2. Although oxygen vacancies promote the migration of lattice O 2- , the enriched surface Zr also inhibits the mobility of lattice O 2- . Therefore, the Tm-CO 2 of Ce 0.84 Zr 0.16 O 2 is higher than that of Ce 0.92 Zr 0.08 O 2 . Based on reaction kinetic study, soot in direct contact with ceria preferentially decomposes with low activation energy, while the oxidation of isolated soot occurs through diffusion with high activation energy. The obtained findings provide new understanding on the soot combustion over nanoceria.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2020

Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers

Electrical characterization of several 4H-SiC Schottky diodes with Aerosol-Jet printed gold (Au), silver (Ag), and platinum (Pt) contacts was performed using forward and reverse current–voltage (IV) measurements. From these measurements, device parameters such as Schottky barrier height and ideality factor were determined; however, many of the devices exhibited nonideal behavior and inferior performance characterized by ideality factors significantly greater than one, disproportionate low voltage leakage current and low barrier heights. Forward current–voltage (FIV) characteristics were fitted to an inhomogeneous barrier height theory to explain the abnormal behavior exhibited by the printed devices. Here, transmission electron microscopy (TEM) of the device cross-sections was performed to investigate the printed metal and semiconductor epitaxial layer interface, which revealed the imperfections in the metal–semiconductor contact. Despite these irregularities, alpha radiation detection capability of these devices was still achieved with an energy resolution of 1.89% at 5.486 MeV, and the best achievable resolution at 0.51% with no energy degradation of 5.486 MeV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Emergence of 4 H $J^π$ = 1 - resonance in contact theories

We obtain the s- and p-wave low-energy scattering parameters for n 3 H elastic scattering and the position of the 4 H J π = 1 - resonance using the pionless effective field theory at leading order. Results are extracted with three numerical techniques: confining the system in a harmonic oscillator trap, solving the Faddeev-Yakubovsky equations in configuration space, and using an effective two-body cluster approach. The renormalization of the theory for the relevant amplitudes is assessed in a cutoff-regulator range between 1 fm -1 and 10 fm -1 . Most remarkably, we find a cutoff-stable/RG-invariant resonance in the 4 H J π = 1 - system. This p-wave resonance is a universal consequence of a shallow two-body state and the introduction of a three-body s-wave scale set by the triton binding energy. The stabilization of a resonant state in a few-fermion system through pure contact interactions has a significant consequence for the powercounting of the pionless theory. Specifically, it suggests the appearance of similar resonant states also in larger nuclei, like 16-oxygen, in which the theory’s leading order does not predict stable states. Those resonances would provide a starting state to be moved to the correct physical position by the perturbative insertion of sub-leading orders, possibly resolving the discrepancy between data and contact EFT.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

Design optimization of semiconductor piezoresistors with Schottky diode contacts

A modeling theory is developed to predict the performance of piezoresistors which incorporate Schottky diode electrical contacts. This new theory allows the design of high performance gauges which can be fabricated using NonLithographically-Based Microfabrication (NLBM) techniques. These semiconductor piezoresistors can be designed in customizable sizes and fabricated in parallel in order to integrate position sensing into MEMS flexural positioners. Customizable nanopositioning platforms will enable advances in a range of nano-scale fabrication and metrology applications. A semiconductor piezoresistor with Schottky diode contacts was fabricated and attached to a titanium flexure. This device is shown to match predicted electrical performance within about 8% and to show a gauge factor of 116, within 2% of the predicted value. Performance limits for Schottky diode semiconductor piezoresistors are identified to be about 127dB full noise dynamic range for a quarter bridge over a 10kHz sensor bandwidth on a 600µm width titanium flexure, making them ideal for sensing on meso-/micro-scale flexural positioners. Methods of reaching these performance bound are suggested and their impact on the sensor dynamic range are studied.

42 ENGINEERING↗
DOE OSTI2021

Characterization of front contact degradation in monocrystalline and multicrystalline silicon photovoltaic modules following damp heat exposure

Reliability and durability tests play a key role in the photovoltaic (PV) industry by minimizing potential failure risks for both existing and new cell and module technologies. In this work, a detailed study of contact degradation in monocrystalline and multicrystalline PV modules is performed. The modules are subjected to a sequence of damp heat (DH) exposures followed by electrical characterization after each step. Electroluminescence (EL) imaging shows different darkening patterns for monocrystalline modules compared to multicrystalline modules; the former shows darkening near the busbars and the latter shows it across virtually the entire cell surface. The primary loss mechanism is confirmed to be resistive after comparing the current-voltage (I–V) characteristics at each DH exposure step. Representative samples have been cored out from both the degraded modules and controls for materials characterization to gain further insights into the degradation mechanism. Top-down and cross-sectional scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and top-down high-resolution X-ray photoelectron spectroscopy (XPS) analysis performed on the cored samples confirm the degradation is due to metallization corrosion. Our study suggests that the difference in the darkening pattern can most likely be attributed to the different silver paste composition used for contacting each cell technology, particularly the composition of the glass frit.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Sliding friction and wear behavior of nuclear graphite in high temperature inert environment: Influence of contact load, speed and temperature

Repeated dynamic interactions of graphitic components in pebble-bed gas-cooled nuclear reactors can cause abrasive wear-induced pebble surface damage, generate hazardous fine graphite debris, and alter fuel circulation dynamics due to changes in friction behavior. Comprehensive tribological characterization of nuclear graphitic materials in conditions relevant to reactor operation is needed to assess reactor long-term safety and performance. This work reports sliding friction and wear behavior of self-mated nuclear graphite ET-10 at various elevated temperatures (650 °C and 750 °C), sliding speeds (1 and 10 mm/s) and contact loads (20 and 40 N) in a controlled argon environment. The results revealed nonmonotonic frictional behavior with a higher running-in coefficient of friction (COF) followed by a lower steady-state COF, as a result of transition from two-body abrasion to three-body abrasion along with formation of a tribofilm. A key finding of this work is the sensitivity of the running-in COF to experimental conditions; maximum running-in values were lower at either elevated temperature (0.52–0.54) or reduced sliding speed (0.51–0.54). Conversely, the steady-state COF remained invariant at approximately 0.3 across all tested parameters. Transmission electron microscopy revealed a 0.5–2.0 μm thick nanocrystalline tribofilm that was thought to be formed by the compaction of the graphitic wear debris on the contact surface during the sliding process. The nanocrystalline nature of the tribofilm was further confirmed by Raman spectroscopy. As a result, the combination of tribological testing and morphological characterization provided a mechanistic understanding of the frictional behavior of nuclear graphite upon sliding.

Friction↗
DOE OSTI2025

Assessment of Blocking Contacts in Suppressing Polarization Effects in CsPbBr 3 Perovskite Detectors

The CsPbBr 3 perovskite has garnered significant attention as a room-temperature semiconductor for hard radiation detection due to straightforward synthesis, scalable crystal growth, low cost, and excellent energy resolution. However, despite these advantages, at ambient temperature, CsPbBr 3 devices may experience performance deterioration and irreversible failure due to “polarization” induced by electromigration of ions to electrical connections on the device. In this study, we tested several contact materials and their optimization deposition techniques to assess the stability of high-performance CsPbBr 3 γ-ray detectors. Metals, with low work functions (Ti, In, Sn, Sb, Pb, Bi, Al, Au, and TiC) and high-work-function (Au or Pt) contacts, were used to form different Schottky junctions using vacuum thermal evaporation, electron-beam evaporation, and sputtering methods. These detectors were tested in intermittent and continuous modes to assess their stability. Among the tested detectors, the Bi/CLB/Pt electrode configuration demonstrated superior stability, operating effectively for 11 months under periodic testing and 16 days under continuous testing. In contrast, other configurations functioned only for a few months under intermittent conditions. Upon incorporating a ~40-nm-thick TiC passivation layer on the anode side (Bi/TiC/CLB/Pt), the CLB device operated continuously for 36 days without degradation. In many cases, the failure mode of the devices was due to the degradation of the anode. Here, the chemical changes in the fresh and deteriorated anodes were characterized using scanning electron microscopy and energydispersive X-ray spectroscopy

CsPbBr3 perovskite↗
DOE OSTI2020

Altered Stability and Degradation Pathway of CH 3 NH 3 PbI 3 in Contact with Metal Oxide

Degradation in CH 3 NH 3 PbI 3 (MAPbI 3 ), when in contact with commonly used metal oxide transport layer materials in optoelectronic devices, is explored experimentally and theoretically. On the basis of the decomposition temperature, the interfacial stability decreases in the following order: MAPbI 3 + TiO 2 ~ MAPbI 3 alone > MAPbI 3 + SnO 2 > MAPbI 3 + NiO, consistent with thermodynamic data. When MAPbI 3 contacts NiO or SnO 2 , experimental results unequivocally show interfacial decomposition occurs at a lower temperature than bulk decomposition and produces different degradation products. Density functional theory calculations reveal an altered reaction pathway on oxide surfaces and elucidate the difference between NiO and TiO 2 . Furthermore, these results pinpoint the importance of understanding the interaction between halide perovskite and other materials used in a device to achieve intrinsically stable devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Low resistance p-type contacts to monolayer WSe2 through chlorinated solvent doping

Tungsten diselenide (WSe 2 ) is a promising p-type semiconductor limited by high contact resistance (R C ) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe 2 to chloroform provides simple and stable p-type doping. In monolayer WSe 2 transistors with Pd contacts, chloroform increases the maximum hole current by over 100× (>200 µA/µm), reduces R C to ~ 2.5 kΩ·μm, and retains an on/off ratio of 10 10 at room temperature. These improvements persist for over 8 months, survive a 150 °C thermal anneal, and remain effective down to 10 K, enabling a cryogenic R C of ~ 1 kΩ·μm. Density functional theory indicates that chloroform strongly physisorbs to WSe 2 , inducing hole doping with minimal impact on the electronic states between the valence band and conduction band edges. Auger electron spectroscopy and atomic force microscopy suggest that chloroform intercalates at the WSe 2 interface with the gate oxide, contributing to doping stability and mitigating interfacial dielectric disorder, though further studies are needed to conclusively confirm this mechanism. This robust, scalable approach enables high-yield WSe 2 transistors with good p-type performance.

42 ENGINEERING↗