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At least 343 records · Page 19

Microwave radiometer for subsurface temperature measurement

A UHF radiometer, operating at a frequency of 800 MHz, was modified to provide an integral, three frequency voltage standing wave ratio (VSWR) circuit in the radio frequency (RF) head. The VSWR circuit provides readings of power transmission at the antenna-material interface with an accuracy of plus or minus 5 percent. The power transmission readings are numerically equal to the emissivity of the material under observation. Knowledge of material emissivity is useful in the interpretation of subsurface apparent temperatures obtained on phantom models of biological tissue. The emissivities of phantom models consisting of lean beefsteak were found to lie in the range 0.623 to 0.779, depending on moisture content. Radiometric measurements performed on instrumented phantoms showed that the radiometer was capable of sensing small temperature changes occurring at depths of at least 19 to 30 mm. This is consistent with previously generated data which showed that the radiometer could sense temperatures at a depth of 38 mm.

Porter, R. A.↗

Multi‐Objective Optimization for Rapid Identification of Novel Compound Metals for Interconnect Applications

Abstract Interconnect materials play the critical role of routing energy and information in integrated circuits. However, established bulk conductors, such as copper, perform poorly when scaled down beyond 10 nm, limiting the scalability of logic devices. Here, a multi‐objective search is developed, combined with first‐principles calculations, to rapidly screen over 15,000 materials and discover new interconnect candidates. This approach simultaneously optimizes the bulk electronic conductivity, surface scattering time, and chemical stability using physically motivated surrogate properties accessible from materials databases. Promising local interconnects are identified that have the potential to outperform ruthenium, the current state‐of‐the‐art post‐Cu material, and also semi‐global interconnects with potentially large skin depths at the GHz operation frequency. The approach is validated on one of the identified candidates, CoPt, using both ab initio and experimental transport studies, showcasing its potential to supplant Ru and Cu for future local interconnects.

Chemistry↗

Time-Resolved X-ray Operando Observations of Lithiation Gradients across the Cathode Matrix and Individual Oxide Particles during Fast Cycling of a Li-Ion Cell

Lithiated transition metal oxides serve as active materials in the positive electrode (cathode) of lithium-ion cells. During electrochemical cycling, lithium ions intercalate and deintercalate into these oxide particles. This behavior causes two types of lithiation gradients to emerge: (i) a bulk gradient across the depth of the cathode matrix (averaged over individual oxide particles) and (ii) a microscopic gradient across the particles themselves, which also depends on their location in the electrode. Here we show how both gradients can be studied using operando X-ray diffraction during 4C charge and 4C discharge. The oxide (de)lithiation is estimated from the unit cell parameters by indexing the X-ray diffraction spectra. By fitting the lithiation profiles with orthogonal polynomials, the bulk gradients across the electrode thickness are quantified. These gradients develop as the current flows through the cell and dissipate during open-circuit and potentiostatic-hold periods. Further details of lithiation dynamics can be obtained through shape analysis of the Bragg peaks. In particular, from electrochemical model simulations, we show that the width and skewness of the (003) peak track (de)lithiation fronts moving across the individual oxide particles.

(003) peak↗

Chemical Profiles of the Oxides on Tantalum in State of the Art Superconducting Circuits

Abstract Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. It is recently shown that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, the chemical profile of the surface of tantalum films grown on c‐plane sapphire using variable energy X‐ray photoelectron spectroscopy (VEXPS) is studied. The different oxidation states of tantalum that are present in the native oxide resulting from exposure to air are identified, and their distribution through the depth of the film is measured. Furthermore, it is shown how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. Correlating these measurements with detailed measurements of quantum devices may elucidate the underlying microscopic sources of loss.

36 MATERIALS SCIENCE↗

Engineering of niobium surfaces through accelerated neutral atom beam technology for quantum applications

A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLSs). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by “surface engineering” (i.e., replacing the uncontrolled native oxide of superconducting metals with a thin, stable surface with predictable characteristics) can be a key enabler for pushing performance forward with devices of higher intrinsic quality factor. In this work, we present a novel approach to replace the native oxide of niobium (typically formed in an uncontrolled fashion when its pristine surface is exposed to air) with an engineered oxide, using a room-temperature process that leverages accelerated neutral atom beam (ANAB) technology at 300 mm wafer scale. This ANAB is composed of a mixture of argon and oxygen, with tunable energy per atom, which is rastered across the wafer surface. The ANAB-engineered Nb-oxide thickness was found to vary from 2 to 6 nm depending on ANAB process parameters. The modeling of variable-energy x-ray photoelectron spectroscopy data confirms the thickness and compositional control of Nb surface oxide by the ANAB process. Furthermore, these results correlate well with those from transmission electron microscopy and x-ray reflectometry. Since ANAB is broadly applicable to material surfaces, the present study indicates its promise for modification of the surfaces of superconducting quantum circuits to achieve longer coherence times.

36 MATERIALS SCIENCE↗

Design and performance validation of a high-temperature downhole permanent magnet generator used for an electro-pulse boring system in geothermal energy applications

Novel, direct-energy drilling technologies such as electro-pulse boring, have the potential to significantly increase the speed and depth of geothermal drilling but have not achieved widespread adoption due to several economic and technical barriers. One major challenge is that these drilling systems require electric power downhole. The current practice is to supply power to the drill string components by running electric cables down the geothermal well, but at the targeted well depths, this practice is cost-inhibitive, inefficient in terms of power consumption, and adds an additional failure point with the long cabling going through a highly corrosive, high-temperature environment. A solution to this problem is to develop high-temperature electric generator technology that can generate the required power downhole. Such a generator must also operate with high efficiency at the target downhole ambient temperature of 250 °C. In this paper, we investigate the various design considerations for this concept and subsequently design the downhole electric generator using a multi-objective design optimization approach. Through electromagnetic-, thermal- and short-circuit fault condition analysis, it is demonstrated that the optimized downhole electric generator concept presented in this paper can meet the performance requirements within this extreme drilling environment. Most remarkably, it is shown that a generator efficiency of 90% is achieved. In conclusion, to validate the results presented in this paper, a prototype generator is built and its performance is measured at 250 °C using a test bench uniquely developed for this application.

15 GEOTHERMAL ENERGY↗

Quantum-Inspired Power System Reliability Assessment

To enable an in-depth study of power system operation and planning, the assessment of standard reliability indices is inevitable. The Monte Carlo Simulation (MCS) approach is a broadly used method in replacing the analytical methods in reliability indices assessment. The accuracy of MCS, however, highly depends on the sampling size, and hence, a complicated system with large number of components requires a large sampling size and daunting computational effort. To address this shortcoming, we, in this paper attempt to take advantage of potentials of the quantum computing (QC) for power system reliability assessment by realizing the following contributions: 1) an innovative quantum model designed for reliability assessment; 2) a quantum circuit that achieves the quadratic speed up compared to the classical MCS method; 3) an efficient quantum amplitude estimation (QAE) algorithm to accurately evaluate the reliability indices. The accuracy and efficacy of the quantum reliability method are extensively verified and demonstrated on both radial and mesh distribution systems.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Split-Block Waveguide Polarization Twist for 220 to 325 GHz

A split-block waveguide circuit that rotates polarization by 90 has been designed with WR-3 input and output waveguides, which are rectangular waveguides used for a nominal frequency range of 220 to 325 GHz. Heretofore, twisted rectangular waveguides equipped with flanges at the input and output have been the standard means of rotating the polarizations of guided microwave signals. However, the fabrication and assembly of such components become difficult at high frequency due to decreasing wavelength, such that twisted rectangular waveguides become impractical at frequencies above a few hundred gigahertz. Conventional twisted rectangular waveguides are also not amenable to integration into highly miniaturized subassemblies of advanced millimeter- and submillimeter-wave detector arrays now undergoing development. In contrast, the present polarization- rotating waveguide can readily be incorporated into complex integrated waveguide circuits such as miniaturized detector arrays fabricated by either conventional end milling of metal blocks or by deep reactive ion etching of silicon blocks. Moreover, the present split-block design can be scaled up in frequency to at least 5 THz. The main step in fabricating a splitblock polarization-rotating waveguide of the present design is to cut channels having special asymmetrically shaped steps into mating upper and lower blocks (see Figure 1). The dimensions of the steps are chosen to be consistent with the WR-3 waveguide cross section, which is 0.864 by 0.432 mm. The channels are characterized by varying widths with constant depths of 0.432, 0.324, and 0.216 mm and by relatively large corner radii to facilitate fabrication. The steps effect both a geometric transition and the corresponding impedance-matched electromagnetic-polarization transition between (1) a WR-3 rectangular waveguide oriented with the electric field vector normal to the block mating surfaces and (2) a corresponding WR-3 waveguide oriented with its electric field vector parallel to the mating surfaces of the blocks. A prototype has been built and tested. Figure 2 presents test results indicative of good performance over nearly the entire WR-3 waveguide frequency band.

Ward, John↗

Cost function dependent barren plateaus in shallow parametrized quantum circuits

Variational quantum algorithms (VQAs) optimize the parameters θ of a parametrized quantum circuit V(θ) to minimize a cost function C. While VQAs may enable practical applications of noisy quantum computers, they are nevertheless heuristic methods with unproven scaling. Here, we rigorously prove two results, assuming V(θ) is an alternating layered ansatz composed of blocks forming local 2-designs. Our first result states that defining C in terms of global observables leads to exponentially vanishing gradients (i.e., barren plateaus) even when V(θ) is shallow. Hence, several VQAs in the literature must revise their proposed costs. On the other hand, our second result states that defining C with local observables leads to at worst a polynomially vanishing gradient, so long as the depth of V(θ) is Ο(logn). Our results establish a connection between locality and trainability. We illustrate these ideas with large-scale simulations, up to 100 qubits, of a quantum autoencoder implementation.

97 MATHEMATICS AND COMPUTING↗

High-Aperture-Efficiency Horn Antenna

A horn antenna (see Figure 1) has been developed to satisfy requirements specific to its use as an essential component of a high-efficiency Ka-band amplifier: The combination of the horn antenna and an associated microstrip-patch antenna array is required to function as a spatial power divider that feeds 25 monolithic microwave integrated-circuit (MMIC) power amplifiers. The foregoing requirement translates to, among other things, a further requirement that the horn produce a uniform, vertically polarized electromagnetic field in its patches identically so that the MMICs can operate at maximum efficiency. The horn is fed from a square waveguide of 5.9436-mm-square cross section via a transition piece. The horn features cosine-tapered, dielectric-filled longitudinal corrugations in its vertical walls to create a hard boundary condition: This aspect of the horn design causes the field in the horn aperture to be substantially vertically polarized and to be nearly uniform in amplitude and phase. As used here, cosine-tapered signifies that the depth of the corrugations is a cosine function of distance along the horn. Preliminary results of finite-element simulations of performance have shown that by virtue of the cosine taper the impedance response of this horn can be expected to be better than has been achieved previously in a similar horn having linearly tapered dielectric- filled longitudinal corrugations. It is possible to create a hard boundary condition by use of a single dielectric-filled corrugation in each affected wall, but better results can be obtained with more corrugations. Simulations were performed for a one- and a three-corrugation cosine-taper design. For comparison, a simulation was also performed for a linear- taper design (see Figure 2). The three-corrugation design was chosen to minimize the cost of fabrication while still affording acceptably high performance. Future designs using more corrugations per wavelength are expected to provide better field responses and, hence, greater aperture efficiencies.

Pickens, Wesley↗

Evaluation of Applied Stress on Atmospheric Corrosion and Pitting Characteristics in 304L Stainless Steel

For this study, the effects of applied stress, ranging from tensile to compressive, on the atmospheric pitting corrosion behavior of 304L stainless steel (SS304L) were analyzed through accelerated atmospheric laboratory exposures and microelectrochemical cell analysis. After exposing the lateral surface of a SS304L four-point bend specimen to artificial seawater at 50°C and 35% relative humidity for 50 d, pitting characteristics were determined using optical profilometry and scanning electron microscopy. The SS304L microstructure was analyzed using electron backscatter diffraction. Additionally, localized electrochemical measurements were performed on a similar, unexposed, SS304L four-point bend bar to determine the effects of applied stress on corrosion susceptibility. Under the applied loads and the environment tested, the observed pitting characteristics showed no correlation with the applied stress (from 250 MPa to -250 MPa). Pitting depth, surface area, roundness, and distribution were found to be independent of location on the sample or applied stress. The lack of correlation between pitting statistics and applied stress was more likely due to the aggressive exposure environment, with a sea salt loading of 4 g/m 2 chloride. The pitting characteristics observed were instead governed by the available cathode current and salt distribution, which are a function of sea salt loading, as well as pre-existing underlying microstructure. In microelectrochemical cell experiments performed in Cl - environments comparable to the atmospheric exposure and in environments containing orders of magnitude lower Cl - concentrations, effects of the applied stress on corrosion susceptibility were only apparent in open-circuit potential in low Cl - concentration solutions. Cl - concentration governed the current density and transpassive dissolution potential.

36 MATERIALS SCIENCE↗

Long-duration life tests of slip ring capsule assemblies for inertial guidance platforms

Eight slip ring capsules, each having 80 or 100 circuits, were operated for time periods ranging from 14,300 hours to 24,700 hours. The test mode simulated the motion of gimbal axes of the Saturn inertial guidance the platform in an organic free nitrogen environment. Computer-compiled noise data (approximately 45,000 recordings) were graphed as a function of test time and position within the capsules and as extreme probability distributions. Greater than ninety-nine percent of the noise measurements for the capsules with sufficient lubrication were less than 10 milliohms. Capsules with glass dielectrics did not perform significantly differently than those with filled epoxy dielectrics. The initial wear mode of prow formation was followed by rider wear. After 10 to the 8th power wipes, ring wear depth did not exceed the surface finish and the radial rider wear depth was less than 13 microns.

Cole, S. R.↗

Blockchain for Fault-Tolerant Grid Operations

Radial topology and vast geographic coverage make distribution systems prone to widespread power outages upon the failure of a single (or multiple) upstream component. Fault-handling algorithms depend heavily on correct estimations of the system’s state to effectively isolate the affected area and reduce the number of affected customers while maintaining operational safety. The work described here leverages the core features of distributed, consensus-based decision-making processes and the immutability of blockchain, and demonstrates their value in improving fault-tolerant grid operations. In this work, blockchain was used to create a trusted data-sharing platform that enables independent actors to reconstruct the system state; this enables distributed resources to make intelligent decisions with limited knowledge. Although the process requires data sharing, its algorithms have been designed to limit the amount of private information that is exchanged, which helps preserve business-sensitive data and maintain customer privacy. In addition, by reducing the information that must be shared, the communication requirements are also reduced; (however, an in-depth analysis of the communication requirements is beyond the scope of this project). The proposed use cases are intended to represent a foundational basis for third parties to develop functional solutions that can eventually be deployed in the field. To further provide guidance, the envisioned use cases have incorporated design requirements that consider the blockchain characteristics and a need to limit information from surrounding resources, which preserve the assumption and the possibility that such resources could belong to different entities. This report presents a detailed design of the three use cases with the tools needed to enable the analysis being tested. The implemented gross error detection method can detect mismatches when the error exceeds 3.8 times the sensor’s rated accuracy. Detection of the circuit breaker state successfully identified the correct states across all simulation tests. A distribution-system power-flow solution in the simulator OpenDSS generally possesses a convergency tolerance of 0.01% on the voltage magnitude. The evaluation of possible reconnection using voltage magnitude—preserving the data ownership—has a voltage magnitude difference smaller than 0.001% from the OpenDSS result. The results preserving data ownership have a difference within the expected power flow tolerance with full knowledge of the system, which surpasses expectations.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell

The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for p-type Si based passivated emitter and rear contact (p-PERC) solar cells. The back surface passivation of PERC cells has been improved drastically with the invention and successful application of an Al 2 O 3 passivation layer. However, the front n + diffused junction surface is still poorly passivated by the standard amorphous silicon nitride (SiNx) anti-reflection coating (ARC) layer. This project sought to address the passivation challenges of both front n+ emitter and undiffused p-Si back surface. Improved p-PERC solar cell performance with open circuit voltage (V OC ) > 680 mV and efficiency of 22% were targeted to validate superior defect passivation properties as compared to standard SiO 2 / Al 2 O 3 passivation. During this project, we systematically investigated process-structure-properties-performance relationships of this novel advanced defect passivation approach. The S/Se passivation was carried out by reacting industrial Czochralski (Cz) Si wafers in H 2 S and H 2 Se gases in a chemical vapor deposition (CVD) reactor at temperatures up to 700°C. After an exhaustive optimization of the process parameters (temperature, time, and gas concentration), we established an optimized process and demonstrated extremely low surface recombination velocities (SRVs) of 1.5 cm/s and 8 cm/s on n-type and p-type Si, respectively, by S-passivation. In-depth surface and interface characterization were performed using soft x-ray and photoelectron spectroscopies (XPS, UPS, XES), combined with capacitance-voltage-frequency (C-V-f) measurements, to decipher the surface chemical/electronic structure and interface defect state densities. These measurements provided critical understanding of the defect passivation mechanism and elucidated the presence of surface S-Si bonds, a reduction of surface dipoles, and low interface state densities (D it ) < 10 11 cm -2 ev -1 . We also found that the Se-passivation is inferior to the S-passivation (by at least one order of magnitude in SRV). Application of the optimized S-passivation to the n+ diffused emitter surface led to a low surface recombination current density, J0 ≈ 40 fA/cm 2 (~ 1/4 of the industry-standard SiNx-passivation), and high implied V OC (686 mV) in p-PERC solar cell structures. The S-passivation process also was found to improve the bulk quality of the p-type Si, better than the SiO 2 or Al 2 O 3 passivation processes. After successful demonstration of efficient passivation of Si surface defects by S, we extensively studied the air, thermal, and illumination stability of the passivation structure. S-passivation itself degrades in air due to competing reactions with moisture and oxygen to form oxides, which can be eliminated by a SiNx capping layer (also acting as a anti-reflective coating). After SiNx process optimization, we demonstrated illumination and thermally stable S-passivation with SRV < 5 cm/s and J 0 < 80 fA/cm 2 . These enhancements in Si passivation, incorporated into p-PERC cells, achieved an efficiency of 19.93% with V OC = 649 mV, using manufacturing metallization and contacting schemes. The low cell performance (cell V OC is much less than the implied V OC = 686 mV, anticipated from surface passivation) was identified due to degradation of S-passivation during the metal firing step (out-diffusion of S from the Si interface to the SiNx surface). The S-passivation of Si surfaces shows significant promise with excellent passivation quality, essential for high performance (high V OC , high efficiency) solar cells. Integration of this innovative defect passivation into devices, however, demands further development of the capping layer, low temperature (<700°C) metallization process, and/or engineering of advanced device structures. Surface passivation-dominated advanced Si solar cells, such as tunnel oxide passivated contacts and Si heterojunctions, are increasingly of interest due to their high-performance potential and will have a growing photovoltaic market share in the near future.

14 SOLAR ENERGY↗

NASA Tech Briefs, April 2005

Gas-Tolerant Device Senses Electrical Conductivity of Liquid Nanoactuators Based on Electrostatic Forces on Dielectrics Replaceable Microfluidic Cartridges for a PCR Biosensor CdZnTe Image Detectors for Hard-X-Ray Telescopes High-Aperture-Efficiency Horn Antenna Full-Circle Resolver-to-Linear-Analog Converter Continuous, Full-Circle Arctangent Circuit Advanced Three-Dimensional Display System Automatic Focus Adjustment of a Microscope Topics covered include: FastScript3D - A Companion to Java 3D; Generating Mosaics of Astronomical Images; Simulating Descent and Landing of a Spacecraft; Simulating Vibrations in a Complex Loaded Structure; Rover Sequencing and Visualization Program; Software Template for Instruction in Mathematics; Support for User Interfaces for Distributed Systems; Nanostructured MnO2-Based Cathodes for Li-Ion/Polymer Cells; Multi-Layer Laminated Thin Films for Inflatable Structures; Two-Step Laser Ranging for Precise Tracking of a Spacecraft; Growing Aligned Carbon Nanotubes for Interconnections in ICs; Multilayer Composite Pressure Vessels; Texturing Blood-Glucose-Monitoring Optics Using Oxygen Beams; Fault-Tolerant Heat Exchanger; Atomic Clock Based on Opto-Electronic Oscillator; Microfocus/Polycapillary-Optic Crystallographic X-Ray Sys; Depth-Penetrating Luminescence Thermography of Thermal- Barrier Coatings; One-Dimensional Photonic Crystal Superprisms; Measuring Low-Order Aberrations in a Segmented Telescope; Mapping From an Instrumented Glove to a Robot Hand; Application of the Hilbert-Huang Transform to Financial Data; Optimizing Parameters for Deep-Space Optical Communication; and Low-Shear Microencapsulation and Electrostatic Coating.

Source record↗

Ultra-high extinction ratio polarization beam splitter with extreme skin-depth waveguide

In this Letter, we present a high extinction ratio and compact on-chip polarization beam splitter (PBS), based on an extreme skin-depth (eskid) waveguide. Subwavelength-scale gratings form an effectively anisotropic metamaterial cladding and introduce a large birefringence. The anisotropic dielectric perturbation of the metamaterial cladding suppresses the TE polarization extinction via exceptional coupling, while the large birefringence efficiently cross-couples the TM mode, thus reducing the coupling length. We demonstrated the eskid-PBS on a silicon-on-insulator platform and achieved an ultra-high extinction ratio PBS ( ≈ <#comment/> 60 d B for TE and ≈ <#comment/> 48 d B for TM) with a compact coupling length ( ≈ <#comment/> 14.5 µ <#comment/> m ). The insertion loss is also negligible ( < <#comment/> 0.6 d B ). The bandwidth is > <#comment/> 80 (30) nm for the TE (TM) extinction ratio > <#comment/> 20 d B . Our ultra-high extinction ratio PBS is crucial in implementing efficient polarization diversity circuits, especially where a high degree of polarization distinguishability is necessary, such as photonic quantum information processing.

Ahmed, Syed Z.↗

Mode-evolution-based ultra-broadband polarization beam splitter using adiabatically tapered extreme skin-depth waveguide

We present an ultra-broadband silicon photonic polarization beam splitter (PBS) using adiabatically tapered extreme skin-depth (eskid) waveguides. Highly anisotropic metamaterial claddings of the eskid waveguides suppress the crosstalk of transverse-electric (TE) mode, while the large birefringence of the eskid waveguide efficiently cross-couples the transverse-magnetic (TM) mode. Two eskid waveguides are adiabatically tapered to smoothly translate TM mode to the coupled port via mode evolution while keeping the TE mode in the through port. The tapered cross-section of the eskid PBS was designed numerically, achieving a large bandwidth at 1400–1650 nm with extinction ratios > <#comment/> 20 d B . We experimentally demonstrated the tapered-eskid PBS and confirmed its broad bandwidth at 1490–1640 nm, limited by laser bandwidth. With its mode evolution, the tapered-eskid PBS is tolerant to fabrication imperfections and should be crucial for controlling polarizations in photonic circuits.

Mia, Md Borhan (ORCID:0000000320851331)↗

Directly resolving surface vs. lattice self-diffusion in iron at the nanoscale using in situ atom probe capabilities

Surface self-diffusion studies on metals under elevated reaction conditions are limited, as it is inherently challenging to unambiguously follow atomic transport across highly-reactive surfaces. Here, quantitative and mechanistic insight into thermally induced atomic transport processes in bcc α-iron at the sub-nanometer level was achieved using isotopic tracer techniques coupled with in situ atom probe tomography (APT) capabilities. Specifically, using a reactor directly connected to the APT, needle-shaped specimens fabricated from epitaxial thin films with an embedded 57 Fe tracer layer were annealed in Ar at 500 °C and 350 °C for 1 hour. Furthermore, the tracer was positioned at various depths in the APT specimen by field evaporation, enabling targeted and simultaneous analysis of lattice and surface diffusion. 57 Fe concentration profiles reveal lattice self-diffusion occurs at 500 °C on the order of ~7 – 9 monolayers, while lattice diffusion is not resolvable at 350 °C. Considerable surface transport was, however, observed at both conditions, where atomic transport over the specimen surface led to the formation of a thin (≤1 nm), isotopically-intermixed layer at the surface. Further, the observed isotopic redistributions at 500 °C were convoluted by additional processes occurring in the subsurface, such as atomic intermixing in correlation with lattice diffusion. However, surface diffusion was determined to be the primary transport process at 350 °C and was thereby quantified. Ultimately, these results demonstrate the significance of surface self-diffusion as a short circuit pathway. More broadly, this approach has the potential to provide detailed insight into (self-)diffusion mechanisms across various materials while targeting site-specific reactions under elevated reaction conditions.

36 MATERIALS SCIENCE↗