Apparatus for producing high purity silicon carbide crystals Patent
Device for producing high purity silicon carbide on carbon base by hydrogen reduction of silicon tetrachloride
SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Device for producing high purity silicon carbide on carbon base by hydrogen reduction of silicon tetrachloride
Crystal growth of 2H silicon carbide showing temperature profile along susceptor as affecting factor
Mass spectroscopy of vaporization of lanthanum and scandium carbides
Knudsen flow mass spectrometry, thermodynamics, and chemical bonding of titanium, zirconium, hafnium, and thorium carbides during high temperature vaporization
Magnetic susceptibility of vanadium carbide from 77 to 300 K measured by magnetometer
Apollo 12 sample 12023 fines carbon, carbides and methane determination by hydrolysis and vacuum pyrolysis
High temperature vaporization of titanium, zirconium, hafnium and thorium carbides by Knudsen effusion mass spectrometry, measuring ion intensities, formation enthalpies and dissociation energies
Nonstoichiometric zirconium niobium carbide thermodynamic properties, deriving components activity equations from statistical considerations based on pairwise interaction energies
Single crystal vanadium carbide magnetic susceptibility decrease with increasing carbon content attributed to orbital paramagnetism
In order to validate methods and cross sections used in the neutronic design of compact fast-spectrum reactors for generating electric power in space, an analysis of a boron-carbide-drum-controlled critical reactor was made. For this reactor the transport analysis gave generally satisfactory results. The calculated multiplication factor for the most detailed calculation was only 0.7-percent Delta k too high. Calculated reactivity worth of the control drums was $11.61 compared to measurements of $11.58 by the inverse kinetics methods and $11.98 by the inverse counting method. Calculated radial and axial power distributions were in good agreement with experiment.
Process of growing expitaxial silicon carbide (SiC) layers on SiC substrates so that epitaxial growth is perpendicular to c-axis by chemical vapor deposition process at temperatures of 1590 to 1660 K minimizes variations in stacking sequence and problems associated with high temperatures.
Specimens of silicon carbide and silicon nitride were exposed to a Mach one gas velocity burner simulating a turbine engine environment. Cyclic tests up to 100 hour duration were conducted at specimen temperatures of 1200 C. A specimen geometry was used that develops thermal stresses during thermal cycling in a manner similar to blades and vanes of a gas turbine engine. Materials were compared on a basis of weight change, dimensional reductions, metallography, fluorescent penetrant inspection, X-ray diffraction analyses, failure mode, and general appearance. One hot pressed SiC, one reaction sintered SiC, and three hot pressed Si3N4 specimens survived the program goal of 100 one-hour cycle exposures. Of the materials that failed to meet the program goal, thermal fatigue was identified as the exclusive failure mode.
Quenching was used to form compressive surface layers in hot-pressed silicon carbide. The presence of the compressive stresses was verified by slotted rod tests. The slotted rod tip deflection was retained at temperatures to at least 1380 C, showing that the stresses are not relieved immediately at elevated temperatures. The flexural strength and impact resistance of specimens quenched from moderate temperatures (2000 C) were increased. Frequently, specimens quenched from higher temperatures were weakened by thermal shock damage.
Soils from eight stations at the Apollo 16 landing site have been analyzed for methane and carbide. These results, in conjunction with published data from photogeology, bulk chemistry, rare gases, primordial and radionuclides, and agglutinate abundances have been interpreted in terms of differing contributions from three components, North and South Ray crater ejecta and Cayley Plains material.
The mechanical properties of swaged rod thermomechanically processed from arc melted Mo-2Re-Hf-C alloys containing as much as 0.9-mol% HfC were evaluated. The low-temperature ductilities of these alloys were not influenced by the amount of HfC present but by the amount of Hf in excess of stoichiometry. Maximum ductility occurred at 0.2- to 0.3-at.% excess Hf. At 0.3- to 0.5-mol% HfC, alloy strength varied directly with the Mo content of extracted carbide particles, both decreasing as the amount of excess Hf increased. Additions of 2-at.% Re had little effect on strength or ductility. Tensile and creep strengths of Mo-2Re-0.7Hf-0.5C alloy equaled or exceeded those of other high strength Mo alloys.
Dynamic friction and wear experiments were conducted in a scanning electron microscope. The wear behavior of pure tungsten carbide and composite with 6 and 15 weight percent cobalt binder was examined. Etching of the binder was done to selectively determine the role of the binder in the wear process. Dynamic experiments were conducted as the WC and bonded WC cermet surfaces were transversed by a 50 micron radiused diamond stylus. These studies show that the predominant wear process in WC is fracture initiated by plastic deformation. The wear of the etched cermets is similar to pure WC. The presence of the cobalt binder reduces both friction and wear. The cementing action of the cobalt reduces granular separation and promotes a dense polished layer because of its low shear strength film-forming properties. The wear debris generated from unetched surface is approximately the same composition as the bulk.
The compressive yield strength of arc-melted polycrystalline zirconium carbide has been found to vary from 77 kg per sq mm at 1200 C to 19 kg per sq mm at 1800 C. Yield drops were observed with plastic strain-rates greater than 0.003/sec but not with slower strain rates. Strain-rate change experiments yielded values for the strain-rate sensitivity parameter m which range from 6.5 at 1500 C to 3.8 at 1800 C, and the product dislocation velocity stress exponent times T was found to decrease linearly with increasing temperature. The deformation rate results are consistent with the Kelly-Rowcliffe model in which the diffusion of carbon assists the motion of dislocations.
This paper deals with the measurement of the total hemispherical emittance of a silicon carbide coated carbon composite which is the thermal control material of the nose cone and leading edges of the Space Shuttle. In order to effect the thermal design of the spacecraft, it is desirable to have emittance data available for the temperature range 100 K to 2000 K to encompass the thermal extremes associated with orbiting and reentry conditions. Since the multiple thermal cycling associated with fifty to one hundred missions might result in substantial property changes, the data to be presented are for the low temperature regime 100 K to 450 K for both virgin material and material which was thermally treated to simulate multiple reentries. The discussion emphasizes the identification of possible sources of error in the measurement of equilibrium temperatures and the extent to which these measurement errors or uncertainties would alter the derived emittance values.