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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Linear electro-optic effect in cubic silicon carbide

The first observation is reported of the electrooptic effect of cubic silicon carbide (beta-SiC) grown by a low-pressure chemical vapor deposition reactor using the hydrogen, silane, and propane gas system. At a wavelength of 633 nm, the value of the electrooptic coefficient r41 in beta-SiC is determined to be 2.7 +/- 0.5 x 10 (exp-12) m/V, which is 1.7 times larger than that in gallium arsenide measured at 10.6 microns. Also, a half-wave voltage of 6.4 kV for beta-SiC is obtained. Because of this favorable value of electrooptic coefficient, it is believed that silicon carbide may be a promising candidate in electrooptic applications for high optical intensity in the visible region.

Tang, Xiao↗
NASA NTRS1992

Sliding durability of two carbide-oxide candidate high temperature fiber seal materials in air to 900 C

A test program to determine the friction and wear properties of two complex carbide oxide ceramic fibers for high temperature sliding seal applications is described. The fibers are based on Si, C, O, and Ti or Si, C, N, and O ceramic systems. Pin on disk tests using ceramic fiber covered pins and Inconel 718 disks, were conducted in air from 25 to 900 C to evaluate potential seal materials. This testing procedure was used in a previous study of oxide ceramic fibers which were found to exhibit wear behavior based predominantly on their mechanical properties. Like the oxide fibers tested previously, these carbide oxide ceramic fibers, show an increase in friction and wear with increased test temperature. At room temperature, the wear behavior seems to be based upon mechanical properties, namely tensile strength. At 500 and especially 900 C, the fibers wear by both mechanical fracture and by oxidative type wear. Based upon post test microscopic and x ray analyses, interaction between the fiber constituents and elements transferred from the counterface, namely Ni and Cr, may have occurred enhancing the tribochemical wear process. These results are interpreted.

Dellacorte, Christopher↗
NASA NTRS1993

Chemical-Vapor Deposition Of Silicon Carbide

Report describes experiments in chemical-vapor deposition of silicon carbide by pyrolysis of dimethyldichlorosilane in hydrogen and argon carrier gases. Directed toward understanding chemical-kinetic and mass-transport phenomena affecting infiltration of reactants into, and deposition of SiC upon, fabrics. Part of continuing effort to develop method of efficient and more nearly uniform deposition of silicon carbide matrix throughout fabric piles to make improved fabric/SiC-matrix composite materials.

Cagliostro, D. E.↗
NASA NTRS1992

Observations on infiltration of silicon carbide compacts with an aluminium alloy

The melt infiltration of ceramic particulates permits an opportunity to observe such fundamental materials phenomena as nucleation, dynamic wetting and growth in constrained environments. Experimental observations are presented on the infiltration behavior and matrix microstructures that form when porous compacts of platelet-shaped single crystals of alpha- (hexagonal) silicon carbide are infiltrated with a liquid 2014 Al alloy. The infiltration process involved counter gravity infiltration of suitably tamped and preheated compacts of silicon carbide platelets under an external pressure in a special pressure chamber for a set period, then by solidification of the infiltrant metal in the interstices of the bed at atmospheric pressure.

Asthana, R.↗
NASA NTRS1957

Preliminary Investigation of the Effect of Surface Treatment on the Strength of a Titanium Carbide - 30 Percent Nickel Base Cermet

Specimens of a nickel-bonded titanium carbide cermet were given the following surface treatments: (1) grinding, (2) lapping, (3) blast cleaning, (4) acid roughening, (5) oxidizing, and (6) oxidizing and refinishing. Room-temperature modulus-of-rupture and impact strength varied with the different surface treatments. Considerable strength losses resulted from the following treatments: (1) oxidation at 1600 F for 100 hours, (2) acid roughening, and (3) severe grinding with 60-grit silicon carbide abrasive. The strength loss after oxidation was partially recovered by grit blasting or diamond grinding.

MATERIALS, PROPERTIES - FLEXURE↗
NASA NTRS1994

A review of nuclear thermal propulsion carbide fuel corrosion and key issues

Corrosion (mass loss) of carbide nuclear fuels due to their exposure to hot hydrogen in nuclear thermal propulsion engine systems greatly impacts the performance, thrust-to-weight and life of such systems. This report provides an overview of key issues and processes associated with the corrosion of carbide materials. Additionally, past pertinent development reactor test observations, as well as related experimental work and analysis modeling efforts are reviewed. At the conclusion, recommendations are presented, which provide the foundation for future corrosion modeling and verification efforts.

Pelaccio, Dennis G.↗
NASA NTRS1995

Microstructural Characterization of Reaction-Formed Silicon Carbide Ceramics

Microstructural characterization of two reaction-formed silicon carbide ceramics has been carried out by interference layering, plasma etching, and microscopy. These specimens contained free silicon and niobium disilicide as minor phases with silicon carbide as the major phase. In conventionally prepared samples, the niobium disilicide cannot be distinguished from silicon in optical micrographs. After interference layering, all phases are clearly distinguishable. Back scattered electron (BSE) imaging and energy dispersive spectrometry (EDS) confirmed the results obtained by interference layering. Plasma etching with CF4 plus 4% O2 selectively attacks silicon in these specimens. It is demonstrated that interference layering and plasma etching are very useful techniques in the phase identification and microstructural characterization of multiphase ceramic materials.

Singh, M.↗
NASA NTRS1995

Oxidation Behavior of Carbon Fiber Reinforced Silicon Carbide Composites

Carbon fiber reinforced Silicon Carbide (C-SiC) composites offer high strength at high temperatures and good oxidation resistance. However, these composites present some matrix microcracks which allow the path of oxygen to the fiber. The aim of this research was to study the effectiveness of a new Silicon Carbide (SiC) coating developed by DUPONT-LANXIDE to enhance the oxidation resistance of C-SiC composites. A thermogravimetric analysis was used to determine the oxidation rate of the samples at different temperatures and pressures. The Dupont coat proved to be a good protection for the SiC matrix at temperatures lower than 1240 C at low and high pressures. On the other hand, at temperatures above 1340 C the Dupont coat did not seem to give good protection to the composite fiber and matrix. Even though some results of the tests have been discussed, because of time restraints, only a small portion of the desired tests could be completed. Therefore, no major conclusions or results about the effectiveness of the coat are available at this time.

Valentin, Victor M.↗
NASA NTRS1996

The 11 micron Silicon Carbide Feature in Carbon Star Shells

Silicon carbide (SiC) is known to form in circumstellar shells around carbon stars. SiC can come in two basic types - hexagonal alpha-SiC or cubic beta-SiC. Laboratory studies have shown that both types of SiC exhibit an emission feature in the 11-11.5 micron region, the size and shape of the feature varying with type, size and shape of the SiC grains. Such a feature can be seen in the spectra of carbon stars. Silicon carbide grains have also been found in meteorites. The aim of the current work is to identity the type(s) of SiC found in circumstellar shells and how they might relate to meteoritic SiC samples. We have used the CGS3 spectrometer at the 3.8 m UKIRT to obtain 7.5-13.5 micron spectra of 31 definite or proposed carbon stars. After flux-calibration, each spectrum was fitted using a chi(exp 2)-minimisation routine equipped with the published laboratory optical constants of six different samples of small SiC particles, together with the ability to fit the underlying continuum using a range of grain emissivity laws. It was found that the majority of observed SiC emission features could only be fitted by alpha-SiC grains. The lack of beta-SiC is surprising, as this is the form most commonly found in meteorites. Included in the sample were four sources, all of which have been proposed to be carbon stars, that appear to show the SiC feature in absorption.

Speck, A. K.↗
NASA NTRS1994

Microstructure and Mechanical Properties of Reaction-Formed Silicon Carbide (RFSC) Ceramics

The microstructure and mechanical properties of reaction-formed silicon carbide (RFSC) ceramics fabricated by silicon infiltration of porous carbon preforms are discussed. The morphological characterization of the carbon preforms indicates a very narrow pore size distribution. Measurements of the preform density by physical methods and by mercury porosimetry agree very well and indicate that virtually all of the porosity in the preforms is open to infiltrating liquids. The average room temperature flexural strength of the RFSC material with approximately 8 at.% free silicon is 369 +/- 28 MPa (53.5 +/- 4 ksi). The Weibull strength distribution data give a characteristic strength value of 381 MPa (55 ksi) and a Weibull modulus of 14.3. The residual silicon content is lower and the strengths are superior to those of most commercially available reaction-bonded silicon carbide materials.

Singh, M.↗
NASA NTRS1961

Stability of Titanium Nitride and Titanium Carbide When Exposed to Hydrogen Atoms from 298 to 1950 K

Titanium nitride and titanium carbide deposited on tungsten wires were exposed to hydrogen atoms (10(exp -4) atm pressure) produced by the action of microwave radiation on molecular hydrogen. The results of these experiments in the temperature range 298 to 1950 K indicate that no appreciable reaction takes place between atomic hydrogen and TiN or TiC. The formation of reaction products (NH3, CH4, C2H2) should be favored at lower temperatures. However, because of the high catalytic activity of Ti for H atom recombination, the rate of such reactions with H atoms is controlled by the rate of evaporation of Ti from the surface, this rate being low at temperatures below 1200 K. In order to interpret the stability of TiN and TiC in H atoms more fully, the stability of TiN and TiC in vacuum and H2 gas was also studied. The thermodynamic computations conform in order of magnitude to the experimentally found rates of decomposition of TiN and TiC in vacuum and are also consistent with the fact that no appreciable reaction is found with these compounds in molecular H2 at a pressure of 10(exp -3) atmosphere in the temperature range 2980 to 2060 K. When TiN or TiC was heated in atomic H or molecular H2, no reaction products other than those obtained from the simple decomposition of the nitride and carbide were observed. The gaseous products were analyzed in a mass spectrometer.

Philipp, Warren H.↗
NASA NTRS1997

Joining of Silicon Carbide-Based Ceramic Materials for High Temperature Applications

Joining of high temperature silicon carbide-based ceramics has been a critical issue for their successful application. An affordable, robust technique for joining silicon carbide-based ceramics has been developed and is capable of producing joints that can be tailored for thickness and composition. These joints maintain their mechanical strength up to 1350 C (2462 F) in air. This technique is suitable for the joining of large and complex shaped ceramic components and can be extended to the repair of these materials.

Singh, Mrityunjay↗
NASA NTRS2004

Nitrogen and Carbon Isotopic Composition of Silicon Carbide in the CO3.0 Meteorite ALHA 77307, a NanoSIMS Study

Presolar grains have been identified in primitive members of all chondrite classes [1, 2]. The study of the isotopic compositions of presolar grains provides information on galactic evolution and nucleosynthesis in stars [3, 4], while the abundances and characteristics of presolar grains contain a record of thermal processing in the solar system [2, 5]. Much of the detailed work on presolar silicon carbide grains has focused on Murchison [e.g., 2] and Orgueil [4], but several other carbonaceous [6, 7], ordinary, and enstatite chondrites [8-11] have also been studied. This study investigates the isotopic composition of silicon carbide from the CO3.0 carbonaceous chondrites ALHA77307 and Colony. SiC is present in ALHA77307 at a matrix normalized abundance of ~8.8 ppm [5], which is approximately twice the abundance of Colony [5], but less than in CI chondrites and the matrices of CM and primitive ordinary and enstatite chondrites [3]. The abundances of SiC and other presolar grains in ALHA77307 seem to correlate with the degree of chemical processing that produced CO3 chondrites [2, 5]. This implies that the same nebular processing that produced the bulk composition of the CO3 chondrite class also modified the assemblage of known presolar grains [5]. To test whether all chondrite classes originated from the same reservoir of presolar dust it is necessary to look for primary differences, not related to thermal processing, between SiC in CO3 chondrites and other chondritic meteorites.

Smith, J. B.↗
NASA NTRS2004

Surface Figure Measurement at 20K: Silicon Carbide and Cesic Mirrors

This report presents the facility, methods, and results of testing cryogenically-cooled spherical mirrors, using standard phase-shifting interferometry, at the Goddard Space Flight Center (GSFC). Two mirrors were supplied to GSFC by the European Space Technology Center, so that GSFC could render a second, independent cryo-measurement of their surface figures at 20K. These mirrors, produced by Galileo Avionica and its partners, demonstrate the technology of silicon carbide and SiC-composite lightweighted mirrors, designed for high accuracy (10 nm rms surface figure error) at both room temperature and 20K. The two mirrors provided for testing at GSFC include one made of sintered silicon carbide (mirror blank by Bettini), and a second made of the C/Si/SiC composite known as Cesic (supplied by ECM). Both mirrors are f/2 spheres with 150 mm clear aperture, and with integral mounts. At GSFC, the mirrors will be measured first at at room temperature, making use of standard techniques, with a predicted uncertainty of 2 nm. Then each mirror will be tested in the cryostat, down to 20K: first freely supported and, second, mounted to a Cesic plate that models a Cesic optical bench. The uncertainty of the resultant surface figure error is predicted to be about 5 nm rms. Details of the uncertainty budget are discussed in a related poster. GSFC's techniques and results can be usefully compared to the measurements performed on the same two mirrors by and for Galileo Avionica, who used a somewhat different test configuration and alignment approach.

Blake, Peter↗
NASA NTRS1997

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗
NASA NTRS1998

Silicon Carbide Mixers Demonstrated to Improve the Interference Immunity of Radio-Based Aircraft Avionics

Concern over the interference of stray radiofrequency (RF) emissions with key aircraft avionics is evident during takeoff and landing of every commercial flight when the flight attendant requests that all portable electronics be switched off. The operation of key radio-based avionics (such as glide-slope and localizer approach instruments) depends on the ability of front-end RF receivers to detect and amplify desired information signals while rejecting interference from undesired RF sources both inside and outside the aircraft. Incidents where key navigation and approach avionics malfunction because of RF interference clearly represent an increasing threat to flight safety as the radio spectrum becomes more crowded. In an initial feasibility experiment, the U.S. Army Research Laboratory and the NASA Lewis Research Center recently demonstrated the strategic use of silicon carbide (SiC) semiconductor components to significantly reduce the susceptibility of an RF receiver circuit to undesired RF interference. A pair of silicon carbide mixer diodes successfully reduced RF interference (intermodulation distortion) in a prototype receiver circuit by a factor of 10 (20 dB) in comparison to a pair of commercial silicon-based mixer diodes.

Neudeck, Philip G.↗