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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Partial oxidation of methane to methanol on boron nitride at near critical acetonitrile

Abstract Direct catalytic conversion of methane to methanol with O 2 has been a fundamental challenge in unlocking abundant natural gas supplies. Metal-free methane conversion with 17% methanol yield based on the limiting reagent O 2 at 275 °C was achieved with near supercritical acetonitrile in the presence of boron nitride. Reaction temperature, catalyst loading, dwell time, methane–oxygen molar ratio, and solvent-oxygen molar ratios were identified as critical factors controlling methane activation and the methanol yield. Extension of the study to ethane (C2) showed moderate yields of methanol (3.6%) and ethanol (4.5%).

03 NATURAL GAS↗
DOE OSTI2023

Evolution of nanopores in hexagonal boron nitride

Abstract The engineering of atomically-precise nanopores in two-dimensional materials presents exciting opportunities for both fundamental science studies as well as applications in energy, DNA sequencing, and quantum information technologies. The exceptional chemical and thermal stability of hexagonal boron nitride (h-BN) suggest that exposed h-BN nanopores will retain their atomic structure even when subjected to extended periods of time in gas or liquid environments. Here we employ transmission electron microscopy to examine the time evolution of h-BN nanopores in vacuum and in air and find, even at room temperature, dramatic geometry changes due to atom motion and edge contamination adsorption, for timescales ranging from one hour to one week. The discovery of nanopore evolution contrasts with general expectations and has profound implications for nanopore applications of two-dimensional materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Electrochemically induced crystallization of amorphous materials in molten MgCl2: boron nitride and hard carbon

A novel and versatile strategy for the amorphous-to-crystalline transformation of boron nitride (BN) with the capability to control the degree of crystallization was developed through an electrochemical pathway using MgCl 2 at low temperature (750 °C). This procedure can be extended to the transformation of amorphous carbon to graphite, which significantly reduces the energy and cost, accelerates the synthesis process and could potentially replace industrial graphite synthesis globally. Therefore, the synthesized graphite exhibits much enhanced electrochemical performance at high charge–discharge rates (5C) compared to commercial synthetic graphite.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Lanthanide thioborates, an emerging class of nonlinear optical materials, efficiently synthesized using the boron–chalcogen mixture method

Here, the Boron–Chalcogen Mixture method was used to obtain single crystals of the previously extremely difficult to synthesize lanthanide orthothioborates to investigate their structures and their structurally connected optical behavior, such as second harmonic generation. Using a combined halide and polychalcogenide flux, the BCM method yielded single crystals of LnBS 3 (Ln = La, Ce, Pr, Nd), which are isostructural and crystallize in the non-centrosymmetric space group, Pna2 1 . Second harmonic generation measurements confirmed the expectation that LaBS 3 would exhibit a strong SHG response, measured at 1.5 × KDP.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Strong, thermo-reversible salogels with boronate ester bonds as thermal energy storage materials

Inorganic salt hydrates are promising phase change materials (PCMs) but suffer from low viscosity at temperatures above their melting point resulting in leakage problems during thermal storage applications. To achieve shape stabilization of one type of molten inorganic PCM – calcium nitrate tetrahydrate (CNH) – this work explored gelation of polyvinyl alcohol (PVA) in this solvent and the effect of dynamic boronate ester bonds on salogel strength. The occurrence of gelation of PVA in molten CNH but not in water is rationalized by the extremely high salt content and scarcity of hydration water in CNH, enabling intermolecular hydrogen bonding between PVA chains. While neat PVA salogels in CNH were weak, with a gel-to-sol transition temperature (T gel ) below room temperature, the addition of small amounts of borax (<~0.3 wt%) introduced dynamic covalent crosslinks and yielded salogels with T gel tunable over a wide temperature range from 7 to 70 °C. Here, the PVA/borax salogels were about one order of magnitude stronger than their well-known PVA/borax hydrogel counterparts, and, unlike PVA/borax hydrogels, were capable of retaining their shape and preventing leakage of molten CNH. Moreover, the salogels exhibited reversible and repeatable temperature-triggered gel-to-sol transitions and the ability to self-heal. The low polymer and crosslinker concentration also ensured that more than 95% of the heat of fusion of neat CNH was maintained in the salogels and was retained after twenty cycles of melting and crystallization, demonstrating the robust nature of these energy storage materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Prediction of superconductivity in metallic boron–carbon compounds from 0 to 100 GPa by high-throughput screening

Boron–carbon compounds have been shown to have feasible superconductivity. In our earlier paper [Zheng et al., Phys. Rev. B, 2023, 107, 014508], we identified a new conventional superconductor of LiB 3 C at 100 GPa. Here, we aim to extend the investigation of possible superconductivity in this structural framework by replacing Li atoms with 27 different cations from periods 3, 4, and 5 under pressures ranging from 0 to 100 GPa. Using the high-throughput screening method of zone-center electron–phonon interaction, we found that ternary compounds like CaB 3 C, SrB 3 C, TiB 3 C, and VB 3 C are promising candidates for superconductivity. The consecutive calculations using the full Brillouin zone confirm that they have a T c of <31 K at moderate pressures. In conclusion, our study demonstrates that fast screening of superconductivity by calculating zone-center electron–phonon coupling strength is an effective strategy for high-throughput identification of new superconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

First-principles elucidation of defect-mediated Li transport in hexagonal boron nitride

Hexagonal boron nitride (hBN) is a promising candidate as a protective membrane or separator in Li-ion and Li–S batteries, given its excellent chemical stability, mechanical robustness, and high thermal conductivity. In addition, hBN can be functionalized by introducing defects and dopants, or be directly integrated into other active components of batteries, which further augments its appeal to the field. Here, we use first-principles simulations to evaluate the role of atomic defects in hBN in regulating the Li-ion diffusion mechanism and associated kinetics. Specifically, the following four distinct types of vacancy defects are considered: isolated single B and N vacancies, a B–N vacancy pair, and a B 3 N vacancy cluster. It is found that these defect sites generally favor Li intercalation and out-of-plane diffusion but slow down in-plane Li-ion diffusion due to a strong Li trapping effect at the defect sites. Such a trapping effect is, however, highly local such that it does not necessarily affect the overall Li-ion conductivity in defected hBN layers. The present systematic evaluation of the impact of atomic defects on Li ion migration and accompanied charge analysis of hBN lattice in response to Li-ion diffusion provide a mechanistic understanding of Li-ion transport behavior in defected hBN and highlight the potential of defect engineering to achieve optimal material performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Synthesis of a series of rare-earth-based multi-anion chalcogenide iodides RE 3 Si 2 Se x S 8− x I (RE = La, Ce, Pr, and Nd) using the flux-assisted boron–chalcogen mixture method

Single crystals and polycrystalline powders of rare earth mixed chalcogenide iodides La 3 Si 2 Se 1.21 S 6.79 I, Ce 3 Si 2 Se 1.39 S 6.61 I, Pr 3 Si 2 Se 1.22 S 6.78 I, and Nd 3 Si 2 Se 1.18 S 6.82 I were prepared using the reactive flux-assisted boron–chalcogen mixture (BCM) method at 850 °C. All compounds crystallized in the monoclinic crystal system, space group C2/c (space group number 15). The series adopts the La 3 Si 2 O 8 Cl structure type, containing isolated SiQ 4 tetrahedra connected by REQ 8 (RE = La, Ce, Pr and Nd) polyhedra; this arrangement creates tunnels that are filled by I atoms. The partial substitution of S by Se was carried out to modulate the optical properties. Phase pure samples and uniform solid solutions were obtained for all compositions as determined using powder X-ray diffraction patterns. Polycrystalline powders were used for physical property measurements, including magnetic susceptibility and UV-Vis diffuse reflectance. The solid-state UV-Vis data for the polycrystalline La 3 Si 2 Se 1.21 S 6.79 I, Ce 3 Si 2 Se 1.39 S 6.61 I, and Pr 3 Si 2 Se 1.22 S 6.78 I samples revealed band gaps of E g = 2.5(1), 2.2(1), and 2.3(1) eV, typical of semiconductors. Magnetic measurements indicated that Ce 3 Si 2 Se 1.39 S 6.61 I and Nd 3 Si 2 Se 1.18 S 6.82 I exhibit paramagnetic behavior with slightly negative Weiss constants θ = −25 and −38. The photoluminescence spectrum of Ce 3 Si 2 Se 1.39 S 6.61 I exhibits a broad emission band around ∼493 nm.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Boron monoxide is a one-dimensional polymer

It was recently reported that boron monoxide (BO) is formed through the cross-linking of B 4 O 2 structural building units. Multiple theoretical phases agree with this description. Using pycnometry, multidimensional 17 O NMR spectroscopy, and plane-wave DFT calculations we determined the likely polymorph to be a one-dimensional polymer initially proposed in 1955.

Thuma, Joseph F. [Iowa State Univ., Ames, IA (Unit↗
DOE OSTI2026

Multiscale analysis of large twist ferroelectricity and swirling dislocations in bilayer hexagonal boron nitride

With its atomically thin structure and intrinsic ferroelectric properties, heterodeformed bilayer hexagonal boron nitride (hBN) has gained prominence in next-generation non-volatile memory applications. However, studies to date have focused almost exclusively on small-twist bilayer hBN, leaving the question of whether ferroelectricity can persist under small heterostrain and large heterodeformation entirely unexplored. In this work, we establish the crystallographic origin of ferroelectricity in bilayer hBN configurations heterodeformed relative to high-symmetry configurations such as AA-stacking and 21.786789° twisted configurations (Σ7), using Smith normal form bicrystallography. We then demonstrate out-of-plane ferroelectricity in bilayer hBN across configurations vicinal to both the AA and Σ7 stackings. Atomistic simulations reveal that AA-vicinal systems support ferroelectricity under both small twist and small strain, with polarization switching in the latter governed by the deformation of swirling dislocations rather than the straight interface dislocations seen in the former. For Σ7-vicinal systems, where existing interatomic potentials underperform particularly under extreme out-of-plane compression, we develop a density-functional-theory-informed continuum framework—the bicrystallography-informed frame-invariant multiscale (BFIM) model, which captures out-of-plane ferroelectricity in heterodeformed configurations vicinal to Σ7 stacking. Interface dislocations in these large heterodeformed bilayer configurations exhibit markedly smaller Burgers vectors compared to interface dislocations in small-twist and small-strain bilayer hBN. The BFIM model reproduces experimental results and provides a powerful, computationally efficient framework for predicting ferroelectricity in large-unit-cell heterostructures where atomistic simulations are prohibitively expensive.

Ahmed, Md Tusher [Univ. of Illinois at Urbana-Cham↗
DOE OSTI2020

Persistent and reversible electrostatic control of doping in graphene/hexagonal boron nitride heterostructures

Since its first application as a substrate for graphene field effect transistors (FETs), hexagonal boron nitride (hBN) has become a prominent component in two-dimensional (2D) material devices. In addition, hBN has been shown to host defects that can be manipulated to change the electronic properties of adjacent 2D materials. Despite the wide use of such defect manipulations, no focused efforts have been made to further the understanding of defect excitations and their influence in graphene/hBN FETs. In this study, we explore the effect of high electric fields (~10 V/nm) on graphene/hBN FETs and find that persistent and reversible shifts in graphene's charge neutrality point (CNP) occur. By increasing the applied electric field and temperature of our device, we find that this CNP shift is enhanced. With this insight, we propose a mechanism that explains these observations based on Poole–Frenkel emissions from defects in hBN. Finally, we show that such an effect may be suppressed by using graphite as a backgate, thus preventing unintended changes in the electrical properties of graphene/hBN FETs.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Probing the surface oxidation process in hexagonal boron nitride epilayers

Thermal neutron detectors based on hexagonal boron nitride ( h -BN) epilayers have demonstrated a record high efficiency among solid-state detectors at 58%. It was found that the performance of h -BN detectors is profoundly influenced by charge recombination at the surfaces. The dynamic process of surface oxidation in h -BN epilayers has been probed by x-ray photoelectron spectroscopy. The spectra of high-resolution (0.1 eV) scans indicated that the linewidth of the B 1s peak at 190.6 eV increased and the peak intensity decreased with an increase in exposure time in-air (t air ). The main B 1s peak at 190.6 eV evolved into multiple peaks at a higher binding energy position due to oxygen impurities tending to occupy nitrogen sites and form the B–O bond. Time constants of the oxidation process have been determined, revealing that the formation process of the B–O bond is very fast and within minutes in h -BN. The results suggest that reducing nitrogen vacancy generation during growth and employing surface treatment techniques would further improve the performance of h -BN devices.

2D materials↗
DOE OSTI2020

Thermal boundary conductance between high thermal conductivity boron arsenide and silicon

Thermal boundary conductance (TBC) is important for heat dissipation in light-emitting diodes (LEDs). In this study, we predicted the TBC between the high thermal conductivity boron arsenide (BAs) and silicon (Si) by nonequilibrium molecular dynamics (MD) simulations. From the thermal conductivity accumulation function with respect to phonon frequency, the dominant phonon frequencies for heat conduction in BAs are extremely different from those in Si. However, our nonequilibrium MD simulations indicated that the TBC of the BAs/Si interface was still high compared to most other interfaces, even though there was a major frequency mismatch in the thermal conductivity accumulation function between BAs and Si. The primary reason for the high TBC is the overlap of phonon density of states between BAs and Si in the frequency range of 5–8 THz. The range of predicted TBC of the BAs/Si interface was between 200 and 300 MW/m2 K in the temperature range of 300–700 K, and the values of the TBC were not sensitive to the temperature. We also found that the TBCs in Si/BAs and Si/Ge interfaces were close to each other considering the simulation uncertainty. This work indicates BAs as an excellent material for heat dissipation across the interfaces.

Wei, Zhiyong (ORCID:000000018686451X)↗