Neutron Displacement Damage in Bipolar Junction Transistors Isolated from an Integrated Circuit
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Poster presentation at MRS Fall 2024 in Boston, MA
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Fabrication technique produces field aided lateral PNP transistors compatible with micropower switching circuits. The sub-collector diffusion is performed with phosphorus as the dopant and the epitaxy is grown using the higher temperature silicon tetrachloride process.
Metal oxide semiconductor integrated circuits, showing failure rates and degradation causes
Several cycles of photoetching, dopant deposition, and drive-in produce selectively-doped regions and semiconductor junctions within a single chip.
Two new processes form complementary transistors in monolithic semiconductor circuits, require fewer steps /infusions/ than previous methods, and eliminate such problems as nonuniform h sub FE distribution, low yield, and large device formation.
An expression for the emitter efficiency is derived taking the degeneracy of the emitter into account. It is found that, even if there is no recombination of minority carriers in the emitter, degeneracy reduces the emitter efficiency. In addition this first order theory explains experimental results on temperature dependence of current gain and predicts an optimum emitter design for a fixed type of emitter profile.
Discussion of an approach for the fabrication of high-temperature GaAs transistors which is centered on the preparation of n-p-n three-layered structures entirely by a vapor-phase growth technique, as described by Tietjen and Amick (1966). The low growth temperature of approximately 750 C is thought to reduce contamination during crystal growth and to contribute to the reasonably high minority-carrier lifetimes obtained for the vapor-grown p-n junctions. The fact that impurity concentrations and layer thicknesses can be precisely controlled for epitaxial layers as thin as 1 micrometer is an important feature of this growth technique.
A network is described which is suitable for realizing a low-sensitivity high-Q second-order frequency-selective amplifier for high-frequency operation. Circuits are obtained from this network which are well suited for realizing monolithic integrated circuits and which do not require any process steps more critical than those used for conventional monolithic operational and video amplifiers. A single chip version using compatible thin-film techniques for the frequency determination elements is then feasible. Center frequency and bandwidth can be set independently by trimming two resistors. The frequency selective circuits have a low sensitivity to the process variables, and the sensitivity of the center frequency and bandwidth to changes in temperature is very low.
Information is presented on performance characteristics of the shuttle orbiter wideband signal conditioner when subjected to special types of input signals. Design analysis of the signal flow path through the signal conditioning amplifier was performed followed by acutal testing of the amplifier with various signal inputs. Results indicate that the signal conditioner should perform acceptably if the shuttle orbiter flight vibration signal levels are in accord with preflight predictions.
Spectrophotometry and spectropolarimetry with HD 44179 are presented. These measurements reveal that the very broad bump evident in previous low-resolution spectra possesses a large amount of structure, including groups of narrow emission lines and several diffuse features. A reduction in polarization, but constant position angle, through the bump indicates that this emission originates within the nebula itself and merely dilutes the polarized scattered starlight. A few very weak atomic emission lines are detected, but the overall feature, which strongly resembles the emission spectra of some molecules, remains unidentified. Constraints on the excitation mechanism are discussed.
Optical scanner spectra are presented for ten positions in the lobes of GL 2688. Color gradients exist across the nebulae, probably due to systematic variations in the sizes of typical scattering grains. Molecular emissions C2, C3, and SiC2 are found, similar to the spectra of comets. Resonance fluorescence seems to be indicated.
The needs of multikilowatt storage for low Earth orbit applications are featured. The modular concept, with projected energy densities of 20-24 W-hr/lb and 700-900 W-hr/ft3, has significant improvements over state of the art capabilities. Other design features are; active cooling, a new scheme for H2-O2 recombination, and pore size engineering of all cell components.