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At least 343 records · Page 19
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Effects of boron addition on the morphology of silicon phases in Al-Si casting alloys

Highlights: • The influence of boron on Si phase was studied. • Boron addition reduces the length of eutectic Si plates in Al-11Si alloys. • Boron addition promotes the nucleation temperature of primary Si phases in Al-14Si alloys. • Boron addition increases the twin density in the <112>{sub Si} growth direction of eutectic Si in Al-11Si and Al-14Si alloys. - Abstract: The influence of B elements on the morphology of Si phases in Al-11Si and Al-14Si alloys has been investigated employing Optical Microscope, Scanning Electron Microscopy, Transmission Electron Microscopy and Differential Scanning Calorimetry. In Al-11Si alloy, the addition of B element not only refines the primary Al dendrites, but also reduces the length of eutectic Si plates. In Al-14Si alloys, the addition of B element promotes the nucleation temperature of primary Si phases, but shows weak influence on the nucleation temperature of eutectics. The effects of B element on the morphologies of both primary Si particle and eutectics can be attributed to the interaction between B and Si elements during the solidification process.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of boronization on plasma-facing graphite surfaces and its correlation with the plasma behavior in NSTX-U

Boronization is a Plasma Facing Component (PFC) conditioning technique widely used in tokamak machines. The National Spherical Torus Experiment-Upgrade (NSTX-U) applied this conditioning, using a plasma glow with a deuterated Trimethyl-boron (d-TMB) and He mixture. The use of boronization during the campaign improved the plasma performance, allowing longer plasma discharges and H-mode access. The chemical state of an ATJ graphite sample, used as a proxy for the NSTX-U PFCs, was monitored in-situ using the Materials Analysis Particle Probe (MAPP) diagnostic and X-ray Photoelectron Spectroscopy (XPS). The XPS data showed a progressive rise (from < 5% to 23%) in the oxygen concentration of the boronized ATJ sample as the D+ fluence increased. Filterscopes were used to measure the light emitted by oxygen impurities in the plasma near the surface of the PFC. An increase in the registered magnitude of the OII line, normalized to the Dγ intensity, was observed as the concentration of O on the ATJ surface increased. The plasma performance was found to be strongly correlated to oxygen impurity concentrations at the plasma edge and on the PFC surface, as measured by the discharge length and access to the H-mode regime. In this work, we present a quantitative analysis of the evolution of the chemistry of the ATJ surface, and the oxygen presence in the plasma-material interface, and report relevant plasma parameters observed during the same period of time.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Enhanced passivation and stability of negative charge injected SiN x with higher nitrogen content on the boron diffused surface of n-type Si solar cells

This paper explores the potential of the negatively charged SiN x using plasma charge injection technology to passivate the front textured boron-diffused emitter of n-type Si solar cells. The high-x value single SiN x layer with x ≥ 1.30 (x = N/Si) previously developed for the planarized rear-side passivation of p-type silicon solar cells, with an excellent passivation and charge stability, was found to be unacceptable for the passivation on the front textured boron emitter of n-type cells due to a severe bulk lifetime degradation issue. Therefore, in this study, we investigated a new concept of depositing a dual-x SiN x with a low-x SiN x layer (x~1.01) on top of a high-x SiN x layer (x~1.30) for passivation of the front textured rough surface of boron diffused emitter in n-type cells. Here, the optimized dual-x SiN x stack reveals the promise of charge retention for more than 25 years in field operation as well as excellent passivation of boron-doped emitter without bulk lifetime degradation. N-type cells with the optimized dual-x SiN x after charge injection show comparable cell performance to Al 2 O 3 passivated reference cells. The results of cell-level light stability tests using one-cell minimodules exhibit cell performance decay characteristics similar to the traditional Al 2 O 3 /SiN x passivated reference module.

14 SOLAR ENERGY↗
DOE OSTI2020

Identifying the Molecular Edge Termination of Exfoliated Hexagonal Boron Nitride Nanosheets with Solid-State NMR Spectroscopy and Plane-Wave DFT Calculations

Hexagonal boron nitride nanosheets (h-BNNS), the isoelectronic analog to graphene, have received interest over the past decade due to their high thermal oxidative resistance, high bandgap, catalytic activity, and low cost. The functional groups that terminate boron and nitrogen zigzag and/or armchair edges directly affect their chemical, physical, and electronic properties. However, an understanding of the molecular edge termination present in h-BNNS is lacking. Here, high-resolution magic-angle spinning (MAS) solid-state NMR (SSNMR) spectroscopy, and plane-wave density-functional theory (DFT) calculations are used to determine the molecular edge termination in exfoliated h-BNNS. 1 H → 11 B cross-polarization MAS (CPMAS) SSNMR spectra of h-BNNS revealed multiple hydroxyl/oxygen coordinated boron edge sites that were not detectable in direct excitation experiments. A dynamic nuclear polarization (DNP)-enhanced 1 H → 15 N CPMAS spectrum of h-BNNS displayed four distinct 15 N resonances while a 2D 1 H{ 14 N} dipolar-HMQC spectrum acquired with fast MAS revealed three distinct 14 N environments. Plane-wave DFT calculations were used to construct model edge structures and predict the corresponding 11 B, 14 N and 15 N SSNMR spectra. Comparison of the experimental and predicted SSNMR spectra confirms that zigzag and armchair edges with both amine and boron hydroxide/oxide termination are present. The detailed characterization of h-BNNS molecular edge termination will prove useful for many material science applications. The techniques outlined here should also be applicable to understand the molecular edge terminations in other 2D materials

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Solution Chemistry to Control Boron-Containing Monolayers on Silicon: Reactions of Boric Acid and 4-Fluorophenylboronic Acid with H- and Cl-terminated Si(100)

In this work, the reactions of boric acid and 4-fluorophenylboronic acid with H- and Cl-terminated Si(100) surfaces in solution were investigated. X-ray photoelectron spectroscopy (XPS) studies reveal that both molecules react preferentially with Cl–Si(100) and not with H–Si(100) at identical conditions. On Cl–Si(100), the reactions introduce boron onto the surface, forming a Si–O–B structure. The quantification of boron surface coverage demonstrates that the 4-fluorophenylboronic acid leads to ~2.8 times higher boron coverage compared to that of boric acid on Cl–Si(100). Consistent with these observations, density functional theory studies show that the reaction of boric acid and 4-fluorophenylboronic acid is more favorable with the Cl- versus H-terminated surface and that on Cl–Si(100) the reaction with 4-fluorophenylboronic acid is ~55.3 kJ/mol more thermodynamically favorable than the reaction with boric acid. The computational studies were also used to demonstrate the propensity of the overall approach to form high-coverage monolayers on these surfaces, with implications for selective-area boron-based monolayer doping.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Nanoporous Boron Nitride as Exceptionally Thermally Stable Adsorbent: Role in Efficient Separation of Light Hydrocarbons

Here in this work, nanoporous boron nitride sample was synthesized with a Brunauer–Emmett–Teller (BET) surface area of 1360 m 2 /g and particle size 5–7 μm. The boron nitride was characterized with X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and electron microscopy (TEM and SEM). Thermogravimetric analysis (TGA) under nitrogen and air and subsequent analysis with XPS and XRD suggested that its structure is stable in air up to 800 °C and in nitrogen up to 1050 °C, which is higher than most of the common adsorbents reported so far. Nitrogen and hydrocarbon adsorption at 298 K and pressure up to 1 bar suggested that all hydrocarbon adsorption amounts were higher than that of nitrogen and the adsorbed amount of hydrocarbon increases with an increase in its molecular weight. The kinetics of adsorption data suggested that adsorption becomes slower with the increase in molecular weight of hydrocarbons. The equilibrium data suggested that that boron nitride is selective to paraffins in a paraffin–olefin mixture and hence may act as an “olefin generator”. The ideal adsorbed solution theory (IAST)-based selectivity for CH 4 /N 2 , C 2 H 6 /CH 4 , and C 3 H 8 /C 3 H 6 was very high and probably higher than the majority of adsorbents reported in the literature. IAST-based calculations were also employed to simulate the binary mixture adsorption data for the gas pairs of CH 4 /N 2 , C 2 H 6 /CH 4 , C 2 H 6 /C 2 H 4 , and C 3 H 8 /C 3 H 6 . Lastly, a simple mathematical model was employed to simulate the breakthrough behavior of the above-mentioned four gas pairs in a dynamic column experiment. The overall results suggest that nanoporous boron nitride can be used as a potential adsorbent for light hydrocarbon separation.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Theory of sigma bond resonance in flat boron materials

Abstract In chemistry, theory of aromaticity or π bond resonance plays a central role in intuitively understanding the stability and properties of organic molecules. Here we present an analogue theory for σ bond resonance in flat boron materials, which allows us to determine the distribution of two-center two-electron and three-center two-electron bonds without quantum calculations. Based on this theory, three rules are proposed to draw the Kekulé-like bonding configurations for flat boron materials and to explore their properties intuitively. As an application of the theory, a simple explanation of why neutral borophene with ~1/9 hole has the highest stability and the effect of charge doping on borophene’s optimal hole concentration is provided with the assumption of σ and π orbital occupation balance. Like the aromaticity theory for carbon materials, this theory greatly deepens our understanding on boron materials and paves the way for the rational design of various boron-based materials.

36 MATERIALS SCIENCE↗
DOE OSTI2013

The use of amorphous boron powder enhances mechanical alloying in soft magnetic FeNbB alloy: A magnetic study

Saturation magnetization and magnetic anisotropy have been studied during mechanical alloying of Fe{sub 75}Nb{sub 10}B{sub 15} alloys prepared using crystalline and commercial amorphous boron. The evolution of saturation magnetization indicates a more efficient dissolution of boron into the matrix using amorphous boron, particularly for short milling times. The magnetization of the crystalline phase increases as boron is incorporated into this phase. Two milling time regimes can be used to describe the evolution of magnetic anisotropy: a first regime governed by microstrains and a second one mainly governed by crystal size and amorphous fraction.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Characterisation of graphite using boron as a marker element

Graphite has many industrial applications. Two of the most important applications are as electrodes in industries and as moderator in nuclear industry. Determination of the Boron Equivalent of the impurity elements in graphite is the most important parameter for certifying the grade of graphite electrode [1]. The use of a suitable method with low limits of determination of boron is therefore necessary. A method has been standardised in Analytical Chemistry Division, BARC for determining trace amounts of boron in graphite electrodes. It involves controlled dissolution of graphite sample powder and measurement of boron by Inductively Coupled Plasma Mass Spectrometer (ICP-MS) using matrix matched standards. The method detection limit is 1 {mu}g g{sup -1}. The method Relative Standard Deviation was 5%. The method was verified by spike recovery experiments. Recoveries were found to be within 100{+-}2% in the concentration range of 1 to 100 {mu}g g{sup -1}. The developed method has been adopted for the compositional characterization of several graphite electrode samples.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers

To develop further diamond related devices, the concentration and spatial location of dopants should be controlled down to the nanometer scale. Scanning transmission electron microscopy using the high angle annular dark field mode is shown to be sensitive to boron doping in diamond epilayers. An analytical procedure is described, whereby local boron concentrations above 10{sup 20} cm{sup −3} were quantitatively derived down to nanometer resolution from the signal dependence on thickness and boron content. Experimental boron local doping profiles measured on diamond p{sup −}/p{sup ++}/p{sup −} multilayers are compared to macroscopic profiles obtained by secondary ion mass spectrometry, avoiding reported artefacts.

36 MATERIALS SCIENCE↗
DOE OSTI2014

The effect of dipole boron centers on the electroluminescence of nanoscale silicon p{sup +}−n junctions

Nanoscale silicon p{sup +}−;n junctions with very high concentration of boron, 5 10{sup 21} cm{sup −3}, are found to demonstrate interesting optical properties. Emission band dominated in near-infrared electroluminescence (EL) spectra possesses high degree of the linear polarization along preferred crystallographic axis which can be controlled by the lateral voltage applied in the plane of the p{sup +}−n junction. Such behavior together with the temperature dependence of the EL intensity is attributed to the presence of the self-compensating dipole boron centers, B{sup +}-B{sup −}, with negative correlation energy which are identified using the ESR technique in the nanoscale silicon p{sup +}−n junctions heavily doped with boron. The model of the recombination process though the negative-U dipole boron centers controlling the optical properties of the nanoscale silicon p{sup +}−n junctions is proposed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Preliminary study of neutron absorption by concrete with boron carbide addition

Concrete has become a conventional material in construction of nuclear reactor due to its properties like safety and low cost. Boron carbide was added as additives in the concrete construction as it has a good neutron absorption property. The sample preparation for concrete was produced with different weight percent of boron carbide powder content. The neutron absorption rate of these samples was determined by using a fast neutron source of Americium-241/Be (Am-Be 241) and detection with a portable backscattering neutron detector. Concrete with 20 wt % of boron carbide shows the lowest count of neutron transmitted and this indicates the most neutrons have been absorbed by the concrete. Higher boron carbide content may affect the concrete strength and other properties.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2014

Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstrate such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Local impedance imaging of boron-doped polycrystalline diamond thin films

Local impedance imaging (LII) was used to visualise surficial deviations of AC impedances in polycrystalline boron-doped diamond (BDD). The BDD thin film electrodes were deposited onto the highly doped silicon substrates via microwave plasma-enhanced CVD. The studied boron dopant concentrations, controlled by the [B]/[C] ratio in plasma, ranged from 1 × 10{sup 16} to 2 × 10{sup 21} atoms cm{sup −3}. The BDD films displayed microcrystalline structure, while the average size of crystallites decreased from 1 to 0.7 μm with increasing [B]/[C] ratios. The application of LII enabled a direct and high-resolution investigation of local distribution of impedance characteristics within the individual grains of BDD. Such an approach resulted in greater understanding of the microstructural control of properties at the grain level. We propose that the obtained surficial variation of impedance is correlated to the areas of high conductance which have been observed at the grain boundaries by using LII. We also postulate that the origin of high conductivity is due to either preferential boron accumulation, the presence of defects, or sp{sup 2} regions in the intragrain regions. The impedance modulus recorded by LII was in full agreement with the bulk impedance measurements. Both variables showed a decreasing trend with increasing [B]/[C] ratios, which is consistent with higher boron incorporation into BDD film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Influence of boron diffusion on the perpendicular magnetic anisotropy in Ta|CoFeB|MgO ultrathin films

We have studied structural and magnetic properties of Ta|CoFeB|MgO heterostructures using cross-section transmission electron microscopy (TEM), electron energy loss spectrum (EELS) imaging, and vibrating sample magnetometry. From the TEM studies, the CoFeB layer is found to be predominantly amorphous for as deposited films, whereas small crystallites, diameter of ∼5 nm, are observed in films annealed at 300 °C. We find that the presence of such nanocrystallites is not sufficient for the occurrence of perpendicular magnetic anisotropy. Using EELS, we find that boron diffuses into the Ta underlayer upon annealing. The Ta underlayer thickness dependence of the magnetic anisotropy indicates that ∼0.2 nm of Ta underlayer is enough to absorb the boron from the CoFeB layer and induce perpendicular magnetic anisotropy. Boron diffusion upon annealing becomes limited when the CoFeB layer thickness is larger than ∼2 nm, which coincides with the thickness at which the saturation magnetization M{sub S} and the interface magnetic anisotropy K{sub I} drop by ∼20%. These results show the direct role which boron plays in determining the perpendicular magnetic anisotropy in CoFeB|MgO heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Mathematical and statistical analysis of the effect of boron on yield parameters of wheat

The main objective of this research is to investigate the effect of foliar applications of boron at different growth stages on yield and yield parameters of wheat. The contribution of boron in achieving yield parameters is described by second degree polynomial equations, with high statistical confidence (p<0.01; F theoretical < F calculated, according to ANOVA test, for Alfa = 0.05). Regression analysis, based on R{sup 2} values obtained, made it possible to evaluate the particular contribution of boron to the realization of yield parameters. This was lower for spike length (R{sup 2} = 0.812), thousand seeds weight (R{sup 2} = 0.850) and higher in the case of the number of spikelets (R{sup 2} = 0.936) and the number of seeds on a spike (R{sup 2} = 0.960). These results confirm that boron plays an important part in achieving the number of seeds on a spike in the case of wheat, as the contribution of this element to the process of flower fertilization is well-known. In regards to productivity elements, the contribution of macroelements to yield quantity is clear, the contribution of B alone being R{sup 2} = 0.868.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2015

Boron nitride nanowires synthesis via a simple chemical vapor deposition at 1200 °C

A very simple chemical vapor deposition technique is used to synthesize high quality boron nitride nanowires at 1200 °C within a short growth duration of 30 min. FESEM micrograph shows that the as-synthesized boron nitride nanowires have a clear wire like morphology with diameter in the range of ∼20 to 150 nm. HR-TEM confirmed the wire-like structure of boron nitride nanowires, whereas XPS and Raman spectroscopy are used to find out the elemental composition and phase of the synthesized material. The synthesized boron nitride nanowires have potential applications as a sensing element in solid state neutron detector, neutron capture therapy and microelectronic devices with uniform electronic properties.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗